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105 条记录 (耗时 0.024 秒)

    Slanted internal combustion engine
    101.
    发明授权
    Slanted internal combustion engine 失效
    倾斜内燃机

    公开(公告)号：US06305340B1

    公开(公告)日：2001-10-23

    申请号：US09461550

    申请日：1999-12-14

    申请人： Akira Furuya

    发明人： Akira Furuya

    IPC分类号： F02F700

    CPC分类号： F02B63/02 ,  F02B75/16 ,  F02B75/20 ,  F02B2075/027 ,  F02F7/0004

    摘要： An internal combustion engine of which a cylinder is slanted toward a crankcase, comprises intake and exhaust valves provided in a cylinder head and below a combustion chamber and a camshaft provided below the intake and exhaust valves for driving the intake and exhaust valves through a rocker arm.

    摘要翻译： 气缸向曲轴箱倾斜的内燃机，包括设置在气缸盖中并位于燃烧室下方的进气和排气阀以及设置在进排气阀下方的凸轮轴，用于通过摇臂驱动进气门和排气门 。

    Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same
    102.
    发明授权
    Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same 失效
    对氢曝露具有低灵敏度的铁电集成电路及其制造方法

    公开(公告)号：US06225156B1

    公开(公告)日：2001-05-01

    申请号：US09062264

    申请日：1998-04-17

    申请人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    发明人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    IPC分类号： H01L218242

    CPC分类号： H01L27/11502 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/55 ,  H01L28/75

    摘要： A hydrogen barrier layer is formed above a ferroelectric thin film in an integrated circuit. The hydrogen barrier layer is directly over a protected segment of the ferroelectric thin film, while a sacrificial segment of the ferroelectric thin film extends laterally beyond the edges of the hydrogen barrier layer. The sacrificial segment absorbs hydrogen so that it cannot diffuse laterally into the protected segment of the ferroelectric thin film. After it absorbs hydrogen, the sacrificial segment is etched away to allow electrical connection to circuit layers below it. The ferroelectric thin film preferably comprises a layered superlattice compound. Excess bismuth or niobium added to the standard precursor solution of a strontium bismuth tantalum niobate compound helps to reduce hydrogen degradation of the ferroelectric properties.

    摘要翻译： 在集成电路中的铁电薄膜的上方形成氢阻挡层。 氢阻挡层直接在铁电薄膜的受保护部分之上，而铁电薄膜的牺牲段横向延伸超过氢阻挡层的边缘。 牺牲段吸收氢，使得其不能横向扩散到铁电薄膜的受保护段中。 在吸收氢之后，牺牲段被蚀刻掉以允许电连接到其下方的电路层。 铁电薄膜优选包含层状超晶格化合物。 添加到铌酸铋钽酸锶化合物的标准前体溶液中的过量铋或铌有助于降低铁电性能的氢降解。

    Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation
    103.
    发明授权
    Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation 失效
    使用氧气制造铁电集成电路来抑制和修复氢气降解的方法

    公开(公告)号：US6165802A

    公开(公告)日：2000-12-26

    申请号：US62258

    申请日：1998-04-17

    申请人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    发明人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    IPC分类号： H01L21/8247 ,  H01L21/30 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L21/00

    CPC分类号： H01L27/11502 ,  H01L21/3003 ,  H01L21/31691 ,  H01L21/324 ,  H01L27/11507 ,  H01L28/55

    摘要： An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300.degree. to 1000.degree. C. for a time period from 20 minutes to 2 hours. The oxygen-recovery anneal reverses the effects of hydrogen degradation and restores ferroelectric properties. The oxygen-recovery anneal is more effective as the annealing temperature and annealing time increase. Preferably the metal oxide element comprises a layered superlattice compound. Hydrogen degradation of the ferroelectric properties is minimized when the layered superlattice compound comprises strontium bismuth tantalum niobate and the niobium/tantalum mole ratio in the precursor is about 0.4. Hydrogen degradation is further minimized when at least one of the superlattice generator-element and the B-site element of the layered superlattice compound is present in excess of the amounts represented by the balanced stoichiometric formula of the compound.

    摘要翻译： 形成集成电路，其包含含有至少两种金属的金属氧化物材料的铁电体元件。 在环境氧气中，在300〜1000℃的温度范围内进行氧回收退火20分钟〜2小时。 氧回收退火反转氢降解的作用并恢复铁电性能。 随着退火温度和退火时间的增加，氧气回收退火更有效。 优选地，金属氧化物元件包括层状超晶格化合物。 当层状超晶格化合物包含铌酸铋铋并且前体中的铌/钽摩尔比为约0.4时，铁电性能的氢降解最小化。 当层状超晶格化合物的超晶格发生元件和B位元素中的至少一个存在超过由化合物的平衡化学计量式表示的量时，进一步降低氢降解。