公开(公告)号：US20210183828A1

公开(公告)日：2021-06-17

申请号：US17121651

申请日：2020-12-14

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Ik Kyu You ,  Seom Geun Lee ,  Seong Kyu Jang ,  Yong Woo Ryu

IPC: H01L25/075 ,  H01L33/62 ,  H01L23/00

Abstract: A display panel including a circuit board having first pads, a plurality of light emitting devices disposed on the circuit board and having second pads, at least one of the light emitting devices including a repaired light emitting device, and a metal bonding layer bonding the first pads and the second pads, in which the metal bonding layer of the repaired light emitting device has at least one of a thickness and a composition different from that of the metal bonding layer of the remaining light emitting devices.

公开(公告)号：US10991851B2

公开(公告)日：2021-04-27

申请号：US16889525

申请日：2020-06-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A. Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US10854670B2

公开(公告)日：2020-12-01

申请号：US16198792

申请日：2018-11-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Seong Gyu Jang ,  Ho Joon Lee ,  Chang Yeon Kim ,  Chung Hoon Lee

IPC: H01L27/15 ,  H01L25/07 ,  H01L25/13 ,  H01L25/065 ,  H01L25/11 ,  H01L33/00 ,  H01L33/10 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/62 ,  H01L25/075 ,  H01L33/38

Abstract: A light emitting device including first, second, and third LED sub-units, and electrode pads disposed on the first LED sub-unit, electrically connected to the LED sub-units, and including a common electrode pad electrically connected to each of the LED sub-units, and first, second, and third electrode pads connected to a respective one of the LED sub-units, in which the common electrode pad, the second electrode pad, and the third electrode pad are electrically connected to the second LED sub-unit and the third LED sub-unit through holes that pass through the first LED sub-unit, the first, second, and third LED sub-units are configured to be independently driven, light generated in the first LED sub-unit emitted to the outside through the second and third LED sub-units, and light generated in the second LED sub-unit is emitted to the outside through the third LED sub-unit.

公开(公告)号：US20200350469A1

公开(公告)日：2020-11-05

申请号：US16935030

申请日：2020-07-21

Applicant: Seoul Viosys Co., Ltd

Inventor： Chi Hyun In ,  Jun Yong Park ,  Kyu Ho Lee ,  Dae Woong Suh ,  Jong Hyeon Chae ,  Chang Hoon Kim ,  Sung Hyun Lee

IPC: H01L33/48

Abstract: Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.

公开(公告)号：US10804316B2

公开(公告)日：2020-10-13

申请号：US15835326

申请日：2017-12-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A. Kim ,  Won Young Roh ,  Min Woo Kang

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44

Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.

公开(公告)号：US10714459B2

公开(公告)日：2020-07-14

申请号：US16207881

申请日：2018-12-03

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon Kim ,  Jong Hyeon Chae ,  Jong Min Jang ,  Ho Joon Lee ,  Seong Gyu Jang

IPC: H01L25/075 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  G02B5/26 ,  H01L33/62 ,  H01L33/08 ,  H01L33/46 ,  H01L33/64

Abstract: A light emitting device for a display includes a substrate and first, second, and third LED sub-units, a first transparent electrode between the first and second LED sub-units and in ohmic contact with the first LED sub-unit, a second transparent electrode between the second and third LED sub-units and in ohmic contact with the second LED sub-unit, a third transparent electrode between the second transparent electrode and the third LED sub-unit and in ohmic contact with the third LED sub-unit, at least one current spreader connected to at least one of the first, second, and third LED sub-units, electrode pads disposed on the substrate, and through-hole vias formed through the substrate, in which at least one of the through-hole vias is formed through the substrate and the first and second LED sub-units.

公开(公告)号：US10700122B2

公开(公告)日：2020-06-30

申请号：US16198796

申请日：2018-11-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Chung Hoon Lee ,  Seong Gyu Jang ,  Chang Yeon Kim ,  Ho Joon Lee

IPC: H01L27/15 ,  H01L27/32 ,  H01L25/07 ,  H01L33/10 ,  H01L33/30 ,  H01L33/40 ,  H01L33/50 ,  H01L25/075 ,  H01L33/00 ,  H01L33/08 ,  H01L33/38

Abstract: A light emitting diode (LED) stack for a display includes a first LED sub-unit having a first surface and a second surface, a second LED sub-unit disposed on the first surface of the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a reflective electrode disposed on the second side of the second LED sub-unit and forming ohmic contact with the first LED sub-unit, and an ohmic electrode interposed between the first LED sub-unit and the second LED sub-unit and forming ohmic contact with the first LED sub-unit, in which the second LED sub-unit and the third LED sub-unit are configured to transmit light generated from the first LED sub-unit, and the third LED sub-unit is configured to transmit light generated from the second LED sub-unit.

公开(公告)号：US10593850B2

公开(公告)日：2020-03-17

申请号：US15868976

申请日：2018-01-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Yeon Cheol Cho ,  Cun Bok Jeong ,  Hyoung Jin Lim

IPC: H01L33/62 ,  H01L33/36 ,  H01L33/38

Abstract: A method for manufacturing a light emitting diode package comprises: arranging a first solder and a second solder between a substrate and a light emitting diode; and subjecting the first solder and the second solder to heat treatment to bond the substrate and the light emitting diode. The heat treatment comprises: increasing the temperature of the first and second solders from room temperature to a temperature Tp; maintaining the temperature Tp; and lowering the temperature Tp. The heating step comprises: a first ramping step of increasing a temperature from room temperature to a temperature TA at a constant speed; a pre-heating step of increasing the temperature from the temperature TA to a temperature TB to impart fluidity to the first and second solders; and a second ramping step of increasing the temperature from the TB to TL at a constant speed.

公开(公告)号：US20190198565A1

公开(公告)日：2019-06-27

申请号：US16228621

申请日：2018-12-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Jong Hyeon Chae ,  Seong Gyu Jang ,  Ho Joon Lee

IPC: H01L27/15 ,  G09G3/32 ,  G09G3/20 ,  H01L33/50 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L27/156 ,  G09G3/2003 ,  G09G3/32 ,  G09G2300/0452 ,  G09G2310/0267 ,  G09G2310/08 ,  H01L33/30 ,  H01L33/405 ,  H01L33/504

Abstract: A light emitting stacked structure including a plurality of epitaxial sub-units disposed one over another, each of the epitaxial sub-units configured to emit different colored light, in which each epitaxial sub-unit has a light emitting area that overlaps one another, and at least one epitaxial sub-unit has an area different from the area of another epitaxial sub-unit.

公开(公告)号：US10236418B2

公开(公告)日：2019-03-19

申请号：US15847735

申请日：2017-12-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon Kim ,  Jong Hyeon Chae

IPC: H01L33/38 ,  H01L33/36 ,  H01L33/50 ,  H01L21/02 ,  H01L33/10 ,  H01L33/40 ,  H01L33/42

Abstract: Disclosed are a light-emitting element and a production method therefor. In one aspect, a light-emitting element is provided to comprise a light-emitting structure comprising a first and second semiconductor layers and an active layer; a first and second contact electrodes respectively making ohmic contact with the first and second semiconductor layers; an insulating layer for insulating the first contact electrode and second contact electrode; a first and second bulk electrodes respectively electrically linked to the first and second contact electrodes; an insulating support covering the side surfaces of the first and second bulk electrodes; a first wavelength converter covering the light-emitting structure; a light-transmitting layer positioned on the first wavelength converter; and a second wavelength converter positioned on the light-transmitting layer, and, in the present invention, white light emitted from the light-emitting element has a CIEx value of at least 0.390 on the CIE color coordinate chart.