Method and Base Station for Adjusting a Persistent Allocation of Resource
    101.
    发明申请
    Method and Base Station for Adjusting a Persistent Allocation of Resource 审中-公开
    调整资源持续分配的方法和基站

    公开(公告)号:US20110230223A1

    公开(公告)日:2011-09-22

    申请号:US13125587

    申请日:2009-08-18

    IPC分类号: H04W72/04

    CPC分类号: H04W72/042 H04W76/30

    摘要: The present invention discloses a method and a base station for adjusting a persistent allocation of resource, wherein the method comprises: a base station sends a resource persistent allocation message to a terminal via a downlink channel, wherein the base station indicates a resource de-allocation by a resource allocation flag in the resource persistent allocation message, and indicates whether a resource hole filling is needed by the resource shifting indicator in the resource persistent allocation message, wherein under the circumstance that the resource hole filling is needed, the location of a de-allocated resource is carried in the resource persistent allocation message; and under the circumstance that no resource hole filling is needed, the identifier of the terminal is carried in the resource persistent allocation message. By using the present invention, the information such as the terminal identifier can be carried optionally by modifying the content carried in the resource persistent allocation message, so that the redundant content in the message is eliminated, the problem that the efficiency of system frequency spectrum is reduced due to the redundant content in the message is avoided, system resources are saved, and system performances are improved.

    摘要翻译: 本发明公开了一种用于调整资源的持续分配的方法和基站,其中所述方法包括:基站经由下行链路信道向终端发送资源持续分配消息,其中,所述基站指示资源去分配 通过资源持续分配消息中的资源分配标志,并且指示资源持续分配消息中的资源移动指示符是否需要资源空穴填充,其中在需要资源充填的情况下, 资源持久分配消息中承载了分配资源; 在不需要资源填充的情况下,终端的标识符在资源持久性分配消息中被携带。 通过使用本发明,可以通过修改资源持久性分配消息中携带的内容来选择性地携带诸如终端标识符的信息,从而消除消息中的冗余内容,系统频谱的效率为 避免了消息中冗余内容的减少,节省了系统资源,提高了系统性能。

    Method and apparatus for detecting change in intrathoracic electrical impedance
    102.
    发明授权
    Method and apparatus for detecting change in intrathoracic electrical impedance 有权
    检测胸腔内电阻抗变化的方法和装置

    公开(公告)号:US07986994B2

    公开(公告)日:2011-07-26

    申请号:US10727008

    申请日:2003-12-03

    IPC分类号: A61N1/365

    摘要: A method and apparatus for detection of changes in impedance a patient that includes generating measured impedances, generating an adaptive baseline trend of the measured impedances corresponding to a first time period, generating a short term trend of the measured impedances corresponding to a second time period less than the first time period, and generating a metric of impedance change between the adaptive baseline trend and one of a most recent measured impedance and the short term trend of the measured impedances.

    摘要翻译: 一种用于检测患者阻抗变化的方法和装置,包括产生测量的阻抗,产生对应于第一时间段的所测量的阻抗的自适应基线趋势,产生对应于第二时间段的所测量的阻抗的短期趋势 并且产生自适应基线趋势与最近测量的阻抗之一和所测量的阻抗的短期趋势之间的阻抗变化的度量。

    CLOSED LOOP OPTIMIZATION OF A-V AND V-V TIMING
    103.
    发明申请
    CLOSED LOOP OPTIMIZATION OF A-V AND V-V TIMING 有权
    闭环优化A-V和V-V时序

    公开(公告)号:US20110172728A1

    公开(公告)日:2011-07-14

    申请号:US12962245

    申请日:2010-12-07

    申请人: Li Wang

    发明人: Li Wang

    IPC分类号: A61N1/39

    摘要: Embodiments of close loop optimization of atrio-ventricular (A-V) delay interval and/or inter-ventricular (V-V) timing are disclosed. An implantable medical device includes a housing that supports a processing means adapted for implantation in a patient. There can be two or more electrodes electrically coupled to the processing means where the two or more electrodes can be used for sensing a patient's cardiac signals, which include a far-field EGM. The processing means can determine a width of a P-wave from the sensed far-field EGM. Also included can be a means for delivering an adapted cardiac pacing therapy based upon the width of the P-wave, including revised A-V delay and/or V-V temporal intervals.

    摘要翻译: 公开了房室(A-V)延迟间隔和/或心室间(V-V)定时的闭环优化的实施例。 可植入医疗装置包括支撑适于植入患者体内的处理装置的外壳。 可以有两个或更多个电极耦合到处理装置的电极,其中两个或更多个电极可用于感测患者的心脏信号,其包括远场EGM。 处理装置可以从感测的远场EGM确定P波的宽度。 还包括可以用于基于P波的宽度(包括修正的A-V延迟和/或V-V时间间隔)递送适应的心脏起搏治疗的手段。

    ANDROGRAPHIS EXTRACT FORMULATIONS
    104.
    发明申请
    ANDROGRAPHIS EXTRACT FORMULATIONS 审中-公开
    ANDROGRAPHIS提取公式

    公开(公告)号:US20110142944A1

    公开(公告)日:2011-06-16

    申请号:US12969395

    申请日:2010-12-15

    摘要: A pharmaceutical formulation containing 50-90% by weight a powdered extract of Andrographis paniculata and 5-50% by weight a powdered blocking agent. The formulation may further contain a pore-forming agent, a filler, a lubricant, or a glidant. Also described are a method for preparing this pharmaceutical formulation and a method for treating inflammatory disease, immunological disease, or respiratory disease with it.

    摘要翻译: 一种药物制剂,其含有50-90重量%的穿心莲的粉末提取物和5-50重量%的粉末封闭剂。 制剂还可以含有成孔剂,填料,润滑剂或助流剂。 还描述了制备该药物制剂的方法和用它治疗炎性疾病,免疫疾病或呼吸系统疾病的方法。

    METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION
    105.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION 审中-公开
    用于制造具有双面钝化的半导体发光器件的方法

    公开(公告)号:US20110140081A1

    公开(公告)日:2011-06-16

    申请号:US13059913

    申请日:2008-08-19

    申请人: Fengyi Jiang Li Wang

    发明人: Fengyi Jiang Li Wang

    IPC分类号: H01L33/06 H01L33/00

    CPC分类号: H01L33/0079 H01L33/44

    摘要: A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode.

    摘要翻译: 一种制造半导体发光器件的方法包括在第一衬底上制造多层半导体结构,其中所述多层半导体结构包括第一掺杂半导体层,MQW有源层,第二掺杂半导体层和第一钝化层。 该方法还包括图案化和蚀刻第一钝化层的一部分以暴露第一掺杂半导体层。 然后形成第一电极,其耦合到第一掺杂半导体层。 接着,将多层结构体接合到第二基板上; 并且去除第一衬底。 形成第二电极,其耦合到第二掺杂半导体层。 此外,形成第二钝化层,其基本上覆盖多层结构的侧壁和第二掺杂半导体层的未被第二电极覆盖的部分表面。

    Method for fabricating highly reflective ohmic contact in light-emitting devices
    108.
    发明授权
    Method for fabricating highly reflective ohmic contact in light-emitting devices 有权
    在发光器件中制造高反射欧姆接触的方法

    公开(公告)号:US07829359B2

    公开(公告)日:2010-11-09

    申请号:US12093512

    申请日:2008-03-26

    IPC分类号: H01L21/00

    CPC分类号: H01L33/405 H01L33/0079

    摘要: One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

    摘要翻译: 本发明的一个实施例提供一种在发光器件中制造高反射电极的方法。 在制造过程中,在生长衬底上制造多层半导体结构,其中多层半导体结构包括第一掺杂半导体层,第二掺杂半导体层和/或多量子阱(MQW)有源层。 该方法还包括以下操作:在第一掺杂半导体层上形成接触辅助金属层,退火多层结构以激活第一掺杂半导体层,去除接触辅助金属层,形成反射欧姆接触金属层 在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层,将所述多层结构接合到导电基板,去除所述生长衬底,形成耦合到所述导电衬底的第一电极,以及形成第二电极 在第二掺杂半导体层上。