公开(公告)号：US08384100B2

公开(公告)日：2013-02-26

申请号：US11915304

申请日：2006-05-26

申请人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/32 ,  H01L33/405

摘要： There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.

摘要翻译： 提供了一种InGaAlN发光器件及其制造方法。 发光器件包括具有主表面和背表面的导电衬底，形成在衬底的主表面上的金属粘合层，形成在接合层上的光反射层，至少包括p- 以及设置在反射层上的n型InGaAlN层，与反射层直接接触的p型InGaAlN层和分别设置在所述n型InGaAlN层和导电基板的背面上的欧姆电极。

公开(公告)号：US08053757B2

公开(公告)日：2011-11-08

申请号：US12159850

申请日：2007-08-31

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo ,  Yong Pu ,  Chuanbing Xiong

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo ,  Yong Pu ,  Chuanbing Xiong

IPC分类号： H01L29/06

CPC分类号： H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

摘要： One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.

摘要翻译： 本发明的一个实施例提供了一种包含n型GaN基半导体层（n型层）的基于氮化镓（GaN）的半导体发光器件（LED）。 活性层 和p型GaN类半导体层（p型层）。 在生长活性层和p型层之前，通过使用氨气（NH 3）作为氮源，外延生长n型层。 V组和III组元件之间的流量比从初始值逐渐减小到最终值。 GaN基LED呈现等于或大于60伏的反向击穿电压。

公开(公告)号：US07977663B2

公开(公告)日：2011-07-12

申请号：US12160040

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L33/04

CPC分类号： H01L33/0079 ,  H01L33/405

摘要： A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.

摘要翻译： 半导体发光器件包括在导电衬底上的多层半导体结构。 多层半导体结构包括位于导电衬底之上的第一掺杂半导体层，位于第一掺杂半导体层之上的第二掺杂半导体层和/或位于第一和第二掺杂半导体层之间的MQW有源层。 该器件还包括在第一掺杂半导体层和导电衬底之间的反射欧姆接触金属层，其包括Ag和Ni，Ru，Rh，Pd，Au，Os，Ir和Pt中的至少一种; 加上Zn，Mg Be和Cd中的至少一种; 和多个：W，Cu，Fe，Ti，Ta和Cr。 该器件还包括在反射欧姆接触金属层和导电基底之间的结合层，耦合到导电基底的第一电极和耦合到第二掺杂半导体层的第二电极。

公开(公告)号：US07943942B2

公开(公告)日：2011-05-17

申请号：US12093508

申请日：2008-03-25

申请人： Fengyi Jiang ,  Junlin Liu ,  Li Wang

发明人： Fengyi Jiang ,  Junlin Liu ,  Li Wang

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L21/6835 ,  H01L33/0079 ,  H01L33/405 ,  H01L2221/6835 ,  H01L2221/68359

摘要： A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.

摘要翻译： 发光器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂层上方的第二掺杂半导体层和位于第一和第二掺杂层之间的多量子阱（MQW）有源层 掺杂层。 该器件还包括耦合到第一掺杂层的第一电极和位于第一电极和第一掺杂层之间的除欧姆接触区域之外的区域中的第一钝化层。 第一钝化层使第一电极与第一掺杂层的边缘基本绝缘，从而减少表面复合。 该器件还包括耦合到第二掺杂层的第二电极和基本上覆盖第一和第二掺杂层，MQW有源层和第二掺杂层的水平表面的侧壁的第二钝化层。

公开(公告)号：US20110049540A1

公开(公告)日：2011-03-03

申请号：US12160044

申请日：2008-03-26

申请人： Li Wang ,  Fengyi Jiang

发明人： Li Wang ,  Fengyi Jiang

IPC分类号： H01L33/32 ,  H01L21/18

CPC分类号： H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment.

摘要翻译： 本发明的一个实施例提供一种制造发光二极管（LED）的方法。 该方法包括在导电基板上制造基于InGaAlN的多层LED结构。 该方法还包括通过多层LED结构的有源区蚀刻预定图案的凹槽。 凹槽将发光区域与非发光区域分开。 此外，该方法包括在发光和非发光区域上沉积电极材料，从而形成电极。 此外，该方法包括沉积覆盖发光和非发光区域的钝化层。 此外，该方法包括去除电极上的钝化层，以使被电极材料和钝化层覆盖的非发光区域比发光区域和电极高，从而保护发光区域， 发射区域与测试设备接触。

公开(公告)号：US07888779B2

公开(公告)日：2011-02-15

申请号：US11910735

申请日：2006-04-14

申请人： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L29/06 ,  H01L21/203

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/78 ,  H01L33/0095

摘要： There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.

摘要翻译： 提供了一种在硅衬底上制造InGaAlN膜的方法，其包括以下步骤：在硅衬底上形成具有凹槽和台面的图案，并在衬底表面上沉积InGaAlN膜，其中凹槽的深度为 大于6nm，并且形成在槽的两侧的台面上的InGaAlN膜在水平方向上断开。 该方法可以通过简单地处理基板来生长高质量，无裂纹和大面积的InGaAlN膜。 同时，还提供了通过使用硅衬底制造InGaAlN发光器件的方法。

公开(公告)号：US20100207096A1

公开(公告)日：2010-08-19

申请号：US12093512

申请日：2008-03-26

申请人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

发明人： Yingwen Tang ,  Li Wang ,  Fengyi Jiang

IPC分类号： H01L33/32 ,  H01L33/04

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

摘要翻译： 本发明的一个实施例提供一种在发光器件中制造高反射电极的方法。 在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。 该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层 在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极 在第二掺杂半导体层上。

公开(公告)号：US20080210951A1

公开(公告)日：2008-09-04

申请号：US12067690

申请日：2006-11-17

申请人： Fengyi Jiang ,  Bilin Shao ,  Li Wang ,  Wenqing Fang

发明人： Fengyi Jiang ,  Bilin Shao ,  Li Wang ,  Wenqing Fang

IPC分类号： H01L33/00 ,  H01L21/205

CPC分类号： H01L33/0066 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L33/0087 ,  H01L33/12

摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.

摘要翻译： 本发明的一个实施例提供一种半导体发光器件，其包括：（1）硅（Si）衬底; （2）形成在Si衬底的表面上的银（Ag）过渡层，其中Ag过渡层覆盖Si衬底表面; 和（3）在Ag涂覆的Si衬底上制造的InGaAlN，ZnMgCdO或ZnBeCdO基半导体发光结构。 注意，Ag过渡层防止Si衬底表面与用于生长半导体发光结构的反应气体形成无定形外涂层。

公开(公告)号：US08361880B2

公开(公告)日：2013-01-29

申请号：US12063989

申请日：2006-10-26

申请人： Fengyi Jiang ,  Chuanbing Xiong ,  Wenqing Fang ,  Li Wang

发明人： Fengyi Jiang ,  Chuanbing Xiong ,  Wenqing Fang ,  Li Wang

IPC分类号： H01L21/30

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/40 ,  H01L33/641

摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage.

摘要翻译： 本发明的一个实施例提供一种包括多层结构的半导体发光器件。 多层结构包括第一掺杂层，有源层和第二掺杂层。 所述半导体发光器件还包括配置成形成到所述第一掺杂层的导电路径的第一欧姆接触层，被配置为形成到所述第二掺杂层的导电路径的第二欧姆接触层，以及不包括 小于15％的铬（Cr）以重量百分比测量。

公开(公告)号：US20120037883A1

公开(公告)日：2012-02-16

申请号：US13059388

申请日：2008-08-19

申请人： Fengyi Jiang ,  Li Wang ,  Junlin Liu ,  Yingwen Tang

发明人： Fengyi Jiang ,  Li Wang ,  Junlin Liu ,  Yingwen Tang

IPC分类号： H01L33/04

CPC分类号： H01L25/0753 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).

摘要翻译： 发光器件包括导电衬底（320），位于导电衬底上方的包括n型掺杂半导体层（308）的多层半导体结构，位于n型掺杂半导体层之上的p型掺杂半导体层（312） 掺杂半导体层（308）和位于p型和n型掺杂半导体层（308,312）之间的MQW有源层（310）。 多层半导体结构被凹槽（300）划分以形成多个独立的发光台面（304,306）。 至少一个发光台面（304,306）包括颜色转换层（324,326）。