公开(公告)号：US20120107742A1

公开(公告)日：2012-05-03

申请号：US12916759

申请日：2010-11-01

Applicant: Fong-Cheng Lee ,  Ching-Yu Chang

Inventor： Fong-Cheng Lee ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0382 ,  G03F7/0392 ,  G03F7/325

Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.

Abstract translation: 本公开提供了在光刻图案化工艺中使用的抗蚀剂。 抗蚀剂包括具有多个拉链分子的聚合材料，每个拉链分子包括第一拉链部分和第二拉链部分，其中第一和第二拉链部分各自包括成对地结合在一起的多个拉链分支并且可切割成热能之一 ，辐射能和化学反应。

公开(公告)号：US08163655B2

公开(公告)日：2012-04-24

申请号：US12560164

申请日：2009-09-15

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/302

CPC classification number: H01L21/28123 ,  H01L21/0271 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32132 ,  H01L21/32139 ,  H01L29/517

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a sacrificial layer on the second material layer; forming a patterned resist layer on the sacrificial layer; applying a first wet etching process using a first etch solution to the substrate to pattern the sacrificial layer using the patterned resist layer as a mask, resulting in a patterned sacrificial layer; applying an ammonia hydroxide-hydrogen peroxide-water mixture (APM) solution to the substrate to pattern the second material layer, resulting in a patterned second material layer; applying a second wet etching process using a second etch solution to the substrate to pattern the first material layer; and applying a third wet etching process using a third etch solution to remove the patterned sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基底上形成第一材料层; 在所述第一材料层上形成第二材料层; 在所述第二材料层上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 将使用第一蚀刻溶液的第一湿蚀刻工艺应用于衬底，以使用图案化的抗蚀剂层作为掩模对牺牲层进行图案化，得到图案化的牺牲层; 将氨氢氧化物 - 过氧化氢 - 水混合物（APM）溶液施加到所述基底上以对所述第二材料层进行图案化，得到图案化的第二材料层; 使用第二蚀刻溶液将第二湿蚀刻工艺应用于所述衬底以对所述第一材料层进行图案化; 以及使用第三蚀刻溶液施加第三湿蚀刻工艺以去除图案化的牺牲层。

公开(公告)号：US08125611B2

公开(公告)日：2012-02-28

申请号：US11762651

申请日：2007-06-13

Applicant: Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03B27/42 ,  G03B27/52 ,  G03B27/58

CPC classification number: G03F7/70341

Abstract: Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.

Abstract translation: 提供了使用屏蔽模块的浸渍光刻设备和方法。 一种浸没式光刻设备，包括具有成像透镜的透镜模块，位于透镜模块下方的被配置用于保持用于处理的基板的基板台，用于在透镜模块和基板之间的空间中提供浸没流体的流体模块 衬底台和用于在处理期间覆盖衬底的边缘的屏蔽模块。

公开(公告)号：US20120034558A1

公开(公告)日：2012-02-09

申请号：US12913191

申请日：2010-10-27

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/2041

Abstract: A photolithography material is provided. The photolithography material is a surface modifying material. The photolithography material includes a polymer (e.g., fluorine polymer) that includes less than approximately 80% hydroxyl groups. In an embodiment, the photolithography material includes less than approximately 80% fluoro-alcohol functional units. Methods of using the photolithography material include as an additive to a photoresist or topcoat layer. The photolithography material may be used in an immersion lithography process.

Abstract translation: 提供光刻材料。 光刻材料是表面改性材料。 光刻材料包括包含小于约80％羟基的聚合物（例如氟聚合物）。 在一个实施例中，光刻材料包括少于约80％的氟 - 醇官能单元。 使用光刻材料的方法包括作为光致抗蚀剂或顶涂层的添加剂。 光刻材料可以用于浸没式光刻工艺。

公开(公告)号：US08046860B2

公开(公告)日：2011-11-01

申请号：US12885630

申请日：2010-09-20

Applicant: Chen-Yuan Hsia ,  Chang-Cheng Hung ,  Chi-Lun Lu ,  Shih-Ming Chang ,  Wen-Chuan Wang ,  Yen-Bin Huang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Chen-Yuan Hsia ,  Chang-Cheng Hung ,  Chi-Lun Lu ,  Shih-Ming Chang ,  Wen-Chuan Wang ,  Yen-Bin Huang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: A47L13/40

CPC classification number: B08B6/00 ,  B08B5/00 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051

Abstract: A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.

Abstract translation: 一种用于半导体晶片制造的系统，包括用于处理晶片的腔室处理路径，以及可操作以通过静电和电磁方法从晶片去除颗粒的装置，其中该装置安装在室过程路径中。

公开(公告)号：US07986395B2

公开(公告)日：2011-07-26

申请号：US11427421

申请日：2006-06-29

Applicant: Ching-Yu Chang ,  Burn Jeng Lin ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Burn Jeng Lin ,  Chin-Hsiang Lin

IPC: G03B27/42

CPC classification number: G03F7/70925 ,  G03F7/70341

Abstract: A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography apparatus. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof.

Abstract translation: 光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 以及适于清洁光刻设备的清洁模块。 清洁模块选自超声波单元，洗涤器，流体射流，静电清洁器及其组合。

公开(公告)号：US20110097670A1

公开(公告)日：2011-04-28

申请号：US12622230

申请日：2009-11-19

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/00 ,  G03C1/00

CPC classification number: G03F7/095 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

Abstract: A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo-acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.

Abstract translation: 光刻方法包括在基板上形成感光层，曝光感光层，烘烤感光层，以及显影曝光的感光层。 感光层包括响应于与酸的反应而变成可溶于碱溶液的聚合物，响应于辐射能而分解形成酸的多个光酸发生剂（PAG），和多个具有沸点分布的猝灭剂 约200℃至约350℃。猝灭剂还具有分布在300道尔顿和约20000道尔顿之间的分子量，并且垂直分布在感光层中，使得感光层顶部的第一浓度C1大于 在感光层的底部具有第二浓度C2。

公开(公告)号：US20110076624A1

公开(公告)日：2011-03-31

申请号：US12566762

申请日：2009-09-25

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/42

CPC classification number: G03F7/425 ,  H01L21/31133

Abstract: A method for fabricating an integrated circuit device is disclosed. The method may include providing a substrate; forming a first material layer over the substrate; forming a patterned second material layer over the substrate; and removing the patterned second material layer with a fluid comprising a steric hindered organic base and organic solvent.

Abstract translation: 公开了一种用于制造集成电路器件的方法。 该方法可以包括提供基底; 在所述衬底上形成第一材料层; 在所述衬底上形成图案化的第二材料层; 以及用包含空间位阻有机碱和有机溶剂的流体除去图案化的第二材料层。

公开(公告)号：US20110008968A1

公开(公告)日：2011-01-13

申请号：US12814172

申请日：2010-06-11

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/308

CPC classification number: H01L21/76811 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

Abstract translation: 光刻图案的方法包括在基底上形成第一材料层; 在所述第一材料层上形成包括至少一个开口的第一图案化抗蚀剂层; 在所述第一图案化抗蚀剂层和所述第一材料层上形成第二材料层; 在所述第二材料层上形成包括其中的至少一个开口的第二图案化抗蚀剂层; 以及蚀刻由第一和第二图案化抗蚀剂层未覆盖的第一和第二材料层。

公开(公告)号：US20110005010A1

公开(公告)日：2011-01-13

申请号：US12885630

申请日：2010-09-20

Applicant: Chen-Yuan Hsia ,  Chang-Cheng Hung ,  Chi-Lun Lu ,  Shih-Ming Chang ,  Wen-Chuan Wang ,  Yen-Bin Huang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Chen-Yuan Hsia ,  Chang-Cheng Hung ,  Chi-Lun Lu ,  Shih-Ming Chang ,  Wen-Chuan Wang ,  Yen-Bin Huang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: A47L13/40

CPC classification number: B08B6/00 ,  B08B5/00 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051

Abstract: A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.

Abstract translation: 一种用于半导体晶片制造的系统，包括用于处理晶片的腔室处理路径，以及可操作以通过静电和电磁方法从晶片去除颗粒的装置，其中该装置安装在室过程路径中。