公开(公告)号：US08772886B2

公开(公告)日：2014-07-08

申请号：US13099308

申请日：2011-05-02

申请人： Yiming Huai ,  Rajiv Yadav Ranjan ,  Ioan Tudosa ,  Roger Klas Malmhall ,  Yuchen Zhou

发明人： Yiming Huai ,  Rajiv Yadav Ranjan ,  Ioan Tudosa ,  Roger Klas Malmhall ,  Yuchen Zhou

IPC分类号： H01L29/82 ,  H01L43/10 ,  H01F10/32 ,  G11C11/16 ,  B82Y25/00 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.

摘要翻译： 自旋转矩存储器随机存取存储器（STTMRAM）元件能够在向其施加电流以存储数据时切换状态，并且包括以下层。 反铁磁层，形成在反铁磁层的顶部上的固定层，形成在固定层的第二磁性层顶部的阻挡层，以及形成在屏障顶部上的第一磁性层的自由层 形成在所述第一磁性层的顶部上的第二磁性层，形成在所述第二磁性层的顶部上的非磁性绝缘层和形成在所述非磁性绝缘层的顶部上的第三磁性层。 在非磁性绝缘层的顶部上形成覆盖层。

公开(公告)号：US08687418B1

公开(公告)日：2014-04-01

申请号：US12623369

申请日：2009-11-20

申请人： Rajiv Yadav Ranjan ,  Ebrahim Abedifard ,  Petro Estakhri ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Ebrahim Abedifard ,  Petro Estakhri ,  Parviz Keshtbod

IPC分类号： G11C11/34

CPC分类号： H01F41/303 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01L21/28273 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42332 ,  H01L29/7881

摘要： An embodiment of the present invention includes a non-volatile storage unit comprising a first and second N-diffusion well separated by a distance of P-substrate. A first isolation layer is formed upon the first and second N-diffusion wells and the P-substrate. A nano-pillar charge trap layer is formed upon the first isolation layer and includes conductive nano-pillars interspersed between non-conducting regions. The storage unit further includes a second isolation layer formed upon the nano-pillar charge trap layer; and at least one word line formed upon the second isolation layer and above a region of nano-pillar charge trap layer. The nano-pillar charge trap layer is operative to trap charge upon application of a threshold voltage. Subsequently, the charge trap layer may be read to determine any charge stored in the non-volatile storage unit, where presence or absence of stored charge in the charge trap layer corresponds to a bit value.

摘要翻译： 本发明的实施例包括非易失性存储单元，其包括以P基底间隔开的第一和第二N-扩散阱。 在第一和第二N-扩散阱和P-基底上形成第一隔离层。 纳米柱电荷陷阱层形成在第一隔离层上，并且包括散布在非导电区域之间的导电纳米柱。 存储单元还包括形成在纳米柱电荷陷阱层上的第二隔离层; 以及形成在第二隔离层上方和纳米柱电荷陷阱层的区域上方的至少一个字线。 纳米柱电荷陷阱层可用于在施加阈值电压时捕获电荷。 随后，可以读取电荷陷阱层以确定存储在非易失性存储单元中的任何电荷，其中电荷陷阱层中存在或不存在电荷对应于位值。

公开(公告)号：US08633720B2

公开(公告)日：2014-01-21

申请号：US13134925

申请日：2011-06-21

申请人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： G01R27/08

CPC分类号： G01R33/093

摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.

摘要翻译： 高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。 薄膜样品可以无图案化。 探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个 磁膜堆中的层改变方向。 可以从不同电流频率的电压确定测得的谐振曲线。 通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。 在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。

公开(公告)号：US20130267042A1

公开(公告)日：2013-10-10

申请号：US13443818

申请日：2012-04-10

申请人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

发明人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC分类号： H01L21/02

CPC分类号： H01L27/222 ,  H01L43/12

摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.

摘要翻译： 描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。 在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。 电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。 然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。 结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。 本发明的各种实施方案包括增强或优化方法的方法。 如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

公开(公告)号：US08542524B2

公开(公告)日：2013-09-24

申请号：US12975304

申请日：2010-12-21

申请人： Parviz Keshtbod ,  Roger Klas Malmhall ,  Rajiv Yadav Ranjan

发明人： Parviz Keshtbod ,  Roger Klas Malmhall ,  Rajiv Yadav Ranjan

IPC分类号： G11C11/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

摘要： A method of making a magnetic random access memory cell includes forming a magnetic tunnel junction (MTJ) on top of a wafer, depositing oxide on top of the MTJ, depositing a photo-resist layer on top of the oxide layer, forming a trench in the photo-resist layer and oxide layer where the trench has a width that is substantially the same as that of the MTJ. Then, the photo-resist layer is removed and a hard mask layer is deposited on top of the oxide layer in the trench and the wafer is planarized to remove the portion of the hard mask layer that is not in the trench to substantially level the top of oxide layer and the hard layer on the wafer. The remaining oxide layer is etched and the MTJ is etched to remove the portion of the MTJ which is not covered by the hard mask layer.

公开(公告)号：US08519496B2

公开(公告)日：2013-08-27

申请号：US13035857

申请日：2011-02-25

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/10

摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

摘要翻译： 自旋转移磁力随机存取存储器（STTMRAM）元件被配置为存储当电流被施加到其上时的状态。 STTMRAM元件包括第一和第二自由层，每个自由层具有定义STTMRAM元件的状态的相关联的磁化方向。 在向STTMRAM元件施加电流之前，第一和第二自由层的磁化方向各自在平面内，并且在向STTMRAM元件施加电流之后，第二自由层的磁化方向 变得基本上标题为平面外和第一自由层开关的磁化方向。 在断电的情况下，第二自由层的磁化方向保持在与第一自由层基本相反的方向。

公开(公告)号：US08508984B2

公开(公告)日：2013-08-13

申请号：US12040801

申请日：2008-02-29

申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC分类号： G11C11/00

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01L43/08

摘要： A non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, and a free layer formed on top of the barrier layer, wherein the electrical resistivity of the barrier layer is reduced by placing said barrier layer under compressive stress. Compressive stress is induced by either using a compressive stress inducing layer, or by using inert gases at low pressure during the sputtering process as the barrier layer is deposited, or by introducing compressive stress inducing molecules into the molecular lattice of the barrier layer.

摘要翻译： 非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层和形成在阻挡层顶部上的自由层，其中阻挡层的电阻率通过将阻挡层 在压应力下。 或者通过使用压缩应力诱导层或在溅射过程中使用惰性气体在溅射过程中作为阻挡层被沉积或通过将压应力诱导分子引入到阻挡层的分子晶格中而引起压缩应力。

公开(公告)号：US08440471B2

公开(公告)日：2013-05-14

申请号：US13345608

申请日：2012-01-06

申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

IPC分类号： H01L21/00 ,  H01L29/82 ,  G01C11/02

CPC分类号： G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

摘要： A method of flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.

摘要翻译： 闪存RAM存储器的方法包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器 非易失性RAM驻留在单片模具上。 非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。

公开(公告)号：US08427863B2

公开(公告)日：2013-04-23

申请号：US12986802

申请日：2011-01-07

申请人： Rajiv Yadav Ranjan ,  Roger Klaus Malmhall ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Roger Klaus Malmhall ,  Parviz Keshtbod

IPC分类号： G11C11/00

CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C19/0808 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.

摘要翻译： 公开了一种包括自由层，两个堆叠和磁性隧道结的多态低电流切换磁存储元件（磁存储元件）。 堆叠和磁性隧道结设置在自由层的表面上，磁性隧道结位于堆叠之间。 堆叠在自由层内引导磁畴，产生自由层畴壁。 从堆栈传递到堆栈的电流推动域壁，重新定位自由层内的域壁。 畴壁相对于磁性隧道结的位置对应于唯一的电阻值，并且将电流从堆叠传递到磁性隧道结读取磁存储元件的电阻。 因此，可以通过移动域壁来实现唯一的记忆状态。

公开(公告)号：US08422286B2

公开(公告)日：2013-04-16

申请号：US13437908

申请日：2012-04-02

申请人： Rajiv Yadav Ranjan ,  Roger Klas Malmhall

发明人： Rajiv Yadav Ranjan ,  Roger Klas Malmhall

IPC分类号： G11C11/14

CPC分类号： G11C11/161 ,  Y10S977/933

摘要： A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.

摘要翻译： 公开了自旋转矩传递存储器随机存取存储器（STTMRAM）元件，并且具有固定层，形成在固定层上的阻挡层，以及由CoFeB-Z的低结晶温度合金构成的自由层，其中Z低于 25原子％的钛，（Ti），锂（Y），锆（Zr）和钒（V）中的一种或多种，​​其中在写入操作期间，在STTMRAM元件上施加双向电流以切换磁化 的相对于固定层的磁化的平行和反平行状态之间的自由层。