公开(公告)号：US20040207414A1

公开(公告)日：2004-10-21

申请号：US10638027

申请日：2003-08-08

Applicant: KLA-Tencor Technologies Corporation

Inventor： Gaurav Verma ,  Kurt H. Weiner

IPC: G01R031/305 ,  G01R031/08 ,  H01L021/66

CPC classification number: H01L22/34 ,  G01R31/307

Abstract: Disclosed are techniques for efficiently inspecting defects on voltage contrast test structures. Improved test structures for facilitating such techniques are also provided. In one embodiment, the methodologies and test structures allow inspection to occur entirely within a charged particle (e.g., e-beam) system, such as a step and repeat e-beam system. In a specific embodiment, a method of localizing and imaging defects in a semiconductor test structure suitable for voltage contrast inspection is disclosed. A charged particle beam based tool is used to determine whether there are any defects (e.g., open or short defects) present within a voltage contrast test structure. The same charged particle beam based tool is then used to locate defects determined to be present within the voltage contrast test structure. For each localized defect, the same charged particle beam based tool may then be used to generate a high resolution image of the localized defect whereby the high resolution image can later be used to classify the each defect. In one embodiment, the determination as to whether there are any defects present within the voltage contrast test structure is accomplished by inspecting a single area of the voltage contrast test structure that fits within the charged particle beam based tool field of view. In an alternative embodiment, the defect's presence and location are determined without rotating the test structure relative to the charged particle beam.

Abstract translation: 公开了用于有效地检查电压对比度测试结构上的缺陷的技术。 还提供了用于促进这种技术的改进的测试结构。 在一个实施例中，方法和测试结构允许检查完全发生在带电粒子（例如，电子束）系统中，例如步进和重复电子束系统。 在具体实施例中，公开了一种适用于电压对比度检查的半导体测试结构中的定位和成像缺陷的方法。 使用基于带电粒子束的工具来确定在电压对比度测试结构内是否存在存在任何缺陷（例如，开放或短缺陷）。 然后使用相同的带电粒子束工具来定位确定存在于电压对比度测试结构内的缺陷。 对于每个局部缺陷，可以使用相同的基于带电粒子束的工具来产生局部缺陷的高分辨率图像，由此可以使用高分辨率图像来分类每个缺陷。 在一个实施例中，关于电压对比度测试结构中是否存在任何缺陷的确定是通过检查适合于基于带电粒子束的工具视野中的电压对比度测试结构的单个区域来实现的。 在替代实施例中，在不使测试结构相对于带电粒子束旋转的情况下确定缺陷的存在和位置。

公开(公告)号：US20040175028A1

公开(公告)日：2004-09-09

申请号：US10379236

申请日：2003-03-03

Applicant: KLA-Tencor Technologies Corporation

Inventor： Daniel L. Cavan

IPC: G06K009/00

CPC classification number: G06T3/4069 ,  G06T2207/30148

Abstract: A surface inspection apparatus in accordance with the principles of the invention includes an optical system having a plurality of time delay integration (TDI) sensors. The plurality of TDI sensors are arranged to generate a plurality of images of an object so that the images are offset a sub-pixel distance from each other. A scanning element enables the TDI sensors to scan the object so successive images of the object can be generated. Image processing circuitry is used to process the plurality of successive images together to produce a reconstructed image of the object having increased pixel density. The embodiments of the invention also include methods for generating reconstructed images from a plurality of TDI images obtained from at least two offset TDI sensors.

Abstract translation: 根据本发明的原理的表面检查装置包括具有多个时间延迟积分（TDI）传感器的光学系统。 多个TDI传感器被布置成生成对象的多个图像，使得图像彼此偏移子像素距离。 扫描元件使TDI传感器能够扫描对象，从而可以生成对象的连续图像。 图像处理电路用于一起处理多个连续图像以产生具有增加的像素密度的对象的重建图像。 本发明的实施例还包括从从至少两个偏移TDI传感器获得的多个TDI图像中生成重建图像的方法。

公开(公告)号：US20040042002A1

公开(公告)日：2004-03-04

申请号：US10401614

申请日：2003-03-27

Applicant: KLA-Tencor Technologies Corporation

Inventor： Ronald L. Roncone ,  Damon Kvamme

IPC: G01N021/00

CPC classification number: G01N21/956 ,  G01N2021/95676

Abstract: An objective lens system having reconfigurable optical components that enable the inspection of inspection surfaces in the absence of a pellicle or through a thin membrane pellicle, and using the same system, also enabling the inspection of inspection surfaces through a thick pellicle. An objective lens system includes a first group and a second group of optical elements. The first group of optical elements enables high numerical aperture and beam contraction. The second group of optical elements is capable of two mode operation enabling, in one mode, inspection through a thin membrane pellicle or in the absence of a pellicle and in another mode, enabling inspection through a thick pellicle. The system can also be enhanced through the use of an interposable aberration corrector plate that is used to correct optical aberrations caused by the presence, absence, or thickness of pellicles.

Abstract translation: 一种具有可重构光学部件的物镜系统，其能够在不存在防护薄膜或薄膜防护薄膜的情况下检查检查表面，并且使用相同的系统，还能够通过厚的防护薄膜检查检查表面。 物镜系统包括第一组和第二组光学元件。 第一组光学元件可实现高数值孔径和光束收缩。 第二组光学元件能够进行两种模式操作，在一种模式中，通过薄膜防护薄膜或不存在防护薄膜组件进行检查，并且在另一种模式下，能够通过厚的防护薄膜进行检查。 还可以通过使用用于校正由薄膜的存在，不存在或厚度引起的光学像差的可插入像差校正板来增强该系统。

公开(公告)号：US20040040003A1

公开(公告)日：2004-02-26

申请号：US10438962

申请日：2003-05-14

Applicant: KLA-Tencor Technologies, Corporation

Inventor： Joel L. Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael E. Adel ,  Boris Simkin ,  David Tulipman

IPC: G06F017/50 ,  H01L021/66

CPC classification number: G03F7/705 ,  G03F7/70516 ,  G03F7/70633

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

Abstract translation: 公开了分析覆盖目标质量的方法和装置。 在一个实施例中，公开了一种从覆盖目标提取数据的方法。 首先，提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号，从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如，系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号，从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声，例如粒状背景。 在其他实施例中，然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。

公开(公告)号：US20040038455A1

公开(公告)日：2004-02-26

申请号：US10438963

申请日：2003-05-14

Applicant: KLA-Tencor Technologies, Corporation

Inventor： Joel L. Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael E. Adel ,  Boris Simkin ,  David Tulipman

IPC: H01L021/50

CPC classification number: G03F7/705 ,  G03F7/70516 ,  G03F7/70633

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

公开(公告)号：US20030142860A1

公开(公告)日：2003-07-31

申请号：US10359444

申请日：2003-02-04

Applicant: KLA-Tencor Technologies Corporation

Inventor： Lance A. Glasser ,  Jun Ye ,  Shauh-Teh Juang ,  David S. Alles ,  James N. Wiley

IPC: G06K009/00

CPC classification number: G03F1/84

Abstract: A reusable circuit design for use with electronic design automation EDA tools in designing integrated circuits is disclosed, as well as reticle inspection and fabrication methods that are based on such reusable circuit design. The reusable circuit design is stored on a computer readable medium and contains an electronic representation of a layout pattern for at least one layer of the circuit design on an integrated circuit. The layout pattern includes a flagged critical region which corresponds to a critical region on a reticle or integrated circuit that is susceptible to special inspection or fabrication procedures. In one aspect of the reusable circuit design, the special analysis is performed during one from a group consisting of reticle inspection, reticle production, integrated circuit fabrication, and fabricated integrated circuit inspection.

Abstract translation: 公开了一种用于设计电子设计自动化EDA工具的可复用电路设计，以及基于这种可重复使用的电路设计的标线检查和制造方法。 可重复使用的电路设计存储在计算机可读介质上，并且包含用于集成电路上的至少一层电路设计的布局图案的电子表示。 布局图案包括标记的临界区域，其对应于易于进行特殊检查或制造程序的掩模版或集成电路上的临界区域。 在可重复使用的电路设计的一个方面，特别的分析是在一个由标线检查，标线制作，集成电路制造和制造的集成电路检查组成的组中进行的。

公开(公告)号：US20030091224A1

公开(公告)日：2003-05-15

申请号：US10314030

申请日：2002-12-04

Applicant: KLA-Tencor Technologies Corporation

Inventor： James N. Wiley ,  Jun Ye ,  Shauh-Teh Juang ,  David S. Alles ,  Yen-Wen Lu ,  Yu Cao

IPC: G06K009/00

CPC classification number: G06T7/001 ,  G06T2207/30148

Abstract: Disclosed is a method of inspecting a reticle defining a circuit layer pattern that is used within a corresponding semiconductor process to generate corresponding patterns on a semiconductor wafer. A test image of the reticle is provided, and the test image has a plurality of test characteristic values. A baseline image containing an expected pattern of the test image is also provided. The baseline image has a plurality of baseline characteristic values that correspond to the test characteristic values. The test characteristic values are compared to the baseline characteristic values such that a plurality of difference values are calculated for each pair of test and baseline characteristic values. Statistical information is also collected.

公开(公告)号：US20020118359A1

公开(公告)日：2002-08-29

申请号：US09907295

申请日：2001-07-17

Applicant: KLA-Tencor Technologies Corporation

Inventor： Christopher R. Fairley ,  Tao-Yi Fu ,  Gershon Perelman ,  Bin-Ming Benjamin Tsai

IPC: G01N021/88

CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G01N21/95607 ,  G01N21/95623 ,  G01N2021/8825

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

Abstract translation: 提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息，该缺陷检测器信号用于开始暗场照明。 缺陷检测器形成缺陷数据的二维直方图，并且双模缺陷判定算法和后处理器评估缺陷。 暗场辐射由两个可调节的高度激光束提供，其将晶片的表面从约6度39度照射。 每个激光器定向在与晶片上的曼哈顿几何形状的取向成45度的方位角，并且彼此成90度的方位角。 通过改变柱面透镜位置​​来补偿角度反射镜的变化，通过平移可调节的反射镜，将照明光斑定位在传感器视场内，旋转和随后移动柱面透镜来提供垂直角度调整性。 系统中的明场分束器是可拆卸的，并且当执行暗场照明时，优选地用空白物替换。 系统的光级控制由双偏振器第一级提供。 从第二偏振片射出的光通过吸收一部分光的滤光器，并包括第二级光控制。 然后光束通过偏振分光镜。 第二通道被进一步反射和偏振，并且两个光束此后照亮基板。

公开(公告)号：US11204330B1

公开(公告)日：2021-12-21

申请号：US14788700

申请日：2015-06-30

Applicant: KLA-Tencor Technologies Corporation

Inventor： Mehdi Vaez-Iravani ,  Eliezer Rosengaus

IPC: G01N21/00 ,  G01N21/88

Abstract: Systems and methods for inspection of a specimen are provided. One system includes an illumination subsystem configured to illuminate the specimen by scanning a spot across the specimen. The system also includes a non-imaging detection subsystem configured to generate output signals responsive to light specularly reflected from the spot scanned across the specimen. In addition, the system includes a processor configured to generate images of the specimen using the output signals and to detect defects on the specimen using the images. In one embodiment, the non-imaging detection subsystem includes an objective and a detector. An NA of the objective does not match a pixel size of the detector. In another embodiment, the non-imaging detection subsystem includes an objective having an NA of greater than about 0.05. The system may be configured for multi-spot illumination and multi-channel detection. Alternatively, the system may be configured for single spot illumination and multi-channel detection.

公开(公告)号：US09052494B2

公开(公告)日：2015-06-09

申请号：US12750488

申请日：2010-03-30

Applicant: Shiow-Hwei Hwang ,  Gregory L. Kirk ,  Hwan J. Jeong ,  David Shafer ,  Russel Hudyma

Inventor： Shiow-Hwei Hwang ,  Gregory L. Kirk ,  Hwan J. Jeong ,  David Shafer ,  Russel Hudyma

IPC: G01N21/00 ,  G02B17/08 ,  G01N21/95 ,  G03F1/84

CPC classification number: G02B17/084 ,  G01N21/9501 ,  G03F1/84

Abstract: An optical system may include an objective having at least four mirrors including an outermost mirror with aspect ratio 0.7, central obscuration 0.7 and field of view >0.8 mm. An optical imaging system may comprise an objective and two or more imaging paths. The imaging paths may provide two or more simultaneous broadband images of a sample in two or more modes. The modes may have different illumination and/or collection pupil apertures or different pixel sizes at the sample.

Abstract translation: 光学系统可以包括具有至少四个反射镜的物镜，其包括具有纵横比<20:1的最外镜和包括折射光学元件的聚焦光学元件。 该目标提供数值孔径> 0.7，瞳孔中心遮蔽<35％的成像。 物镜可以具有两个或更多个反射镜，一个具有折射模块的反射镜，该折射模块密封最外镜的中心开口。 宽带成像系统可以包括一个物镜和两个或更多个在数值孔径> 0.7和视场> 0.8mm处提供成像的成像路径。 光学成像系统可以包括物镜和两个或更多个成像路径。 成像路径可以以两种或更多种模式提供样本的两个或更多个同时宽带图像。 这些模式可以在样品处具有不同的照明和/或收集光瞳孔径或不同的像素尺寸。