公开(公告)号：US20040113089A1

公开(公告)日：2004-06-17

申请号：US10248074

申请日：2002-12-16

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： Alan C. Janos ,  Betty Zhang

IPC: G01J005/02

CPC classification number: G01J1/429 ,  G11C16/18

Abstract: An apparatus and process for measuring light intensities includes the use of a probe. The probe is configured for monitoring a wavelength range from about 180 nanometers to about 270 nanometers (nm). The probe comprises a reflective and diffusive layer adapted for collecting light; a waveguide having one end in optical communication with the reflective and diffusive layer, wherein the waveguide has greater than about 50 percent transmission at wavelengths of about 180 nm to about 270 nm; a sensor probe in optical communication with the other end of the waveguide; and a filter intermediate to the waveguide and the sensor, wherein the filter is adapted to remove wavelengths greater than about 270 nm and has a percent transmission at wavelengths of about 180 nm to about 270 nm greater than about 50 percent.

Abstract translation: 用于测量光强度的装置和方法包括使用探针。 该探针配置用于监测约180纳米至约270纳米（nm）的波长范围。 探针包括适于收集光的反射和漫射层; 波导，其一端与反射和扩散层光学连通，其中波导在约180nm至约270nm的波长处具有大于约50％的透射率; 与波导的另一端光连通的传感器探头; 以及位于波导和传感器之间的滤波器，其中滤波器适于去除大于约270nm的波长并且具有大于约50％的约180nm至约270nm的波长的百分比透射率。

公开(公告)号：US20030102085A1

公开(公告)日：2003-06-05

申请号：US10336270

申请日：2003-01-03

Applicant: Axcelis Technologies, Inc.

Inventor： Joel Penelon ,  Ivan Berry

IPC: H01L021/00

CPC classification number: C23C16/517 ,  C23C16/453 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/4607

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

公开(公告)号：US20030049571A1

公开(公告)日：2003-03-13

申请号：US10267757

申请日：2002-10-09

Applicant: Axcelis Technologies, Inc.

Inventor： John S. Hallock ,  Robert D. Mohondro

IPC: G03C005/00

CPC classification number: G03F7/405 ,  G03F7/40 ,  Y10S430/143 ,  Y10S430/168

Abstract: A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.

公开(公告)号：US20010027016A1

公开(公告)日：2001-10-04

申请号：US09876318

申请日：2001-06-07

Applicant: Axcelis Technologies, Inc.

Inventor： Qingyan Han ,  Ivan Berry ,  Palani Sakthivel ,  Ricky Ruffin ,  Mahmoud Dahimene

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/02071 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/76813 ,  Y10S438/963

Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.

Abstract translation: 在存在或不存在铜时，从半导体晶片的暴露的低k电介质层剥离光刻胶和/或去除后蚀刻残留物的方法。 该方法包括通过使无氧气体经受能量源产生具有电中性和带电粒子的等离子体来产生无氧等离子体。 然后将带电粒子从等离子体中选择性地除去。 电中性颗粒与光致抗蚀剂和/或后蚀刻残余物反应以形成挥发性气体，然后通过气流从晶片中除去。 用于剥离光致抗蚀剂和/或后蚀刻残余物的无氧等离子体气体组合物包括含氢气体和氟轴承，其中含氟气体小于总气体组成的约10体积％。

公开(公告)号：US20250167021A1

公开(公告)日：2025-05-22

申请号：US18918276

申请日：2024-10-17

Applicant: Axcelis Technologies, Inc.

Inventor： Phillip Geissbuhler ,  Neil Bassom ,  David Hoglund ,  Vladimir Romanov

IPC: H01L21/67 ,  C23C14/48 ,  C23C14/54 ,  G01N21/88 ,  G01N21/958

Abstract: An ion implantation system includes a sensor for monitoring depositions of particles or flakes of other materials. The sensor monitors film thickness on a clear panel from behind the clear panel by emitting light and detecting reflections from the light. The system generates an alert for a buildup thickness. The composition of the film may also be detected by the sensor.

公开(公告)号：US20250157775A1

公开(公告)日：2025-05-15

申请号：US18944039

申请日：2024-11-12

Applicant: Axcelis Technologies, Inc.

Inventor： Steve T. Drummond

IPC: H01J1/26 ,  H01J37/30 ,  H01J37/317

Abstract: A cathode filament device for an indirectly heated cathode has a first and second filament rods having respective first and second engagement portions. The first engagement portion has a first engagement body with first and second positioning features extending from the first engagement body. The second engagement portion has at least a second engagement body. Third and fourth positioning features may extend from the second engagement body. First and second clamping members have respective clamping surfaces configured to selectively engage the respective first and second engagement bodies. At least the first positioning feature limits a translation of the first filament rod with respect to the first clamping member along a first axis. The second, third, and fourth positioning features may further limit the translation and secure a position of a filament coupled to the first and second filament rods.

公开(公告)号：US20250087448A1

公开(公告)日：2025-03-13

申请号：US18818760

申请日：2024-08-29

Applicant: Axcelis Technologies, Inc.

Inventor： Neil J. Bassom

IPC: H01J37/244 ,  H01J37/24 ,  H01J37/317

Abstract: An ion beam characterization system has one or more sensors positioned with respect to an ion beam. The one or more sensors image a portion of the ion beam over a predetermined range of angles and positions of the one or more sensors with respect to the portion of the ion beam, and define imaging data associated with the portion of the ion beam. A controller is configured to define a two-dimensional profile of the portion of the ion beam based, at least in part, on the imaging data. The two-dimensional profile is based, at least in part, on the predetermined range of angles and positions of the one or more sensors with respect to the ion beam and light associated with the ion beam. The sensors receive the light associated with the ion beam and to provide a signal to the controller based on the received light.

公开(公告)号：US20250046563A1

公开(公告)日：2025-02-06

申请号：US18362429

申请日：2023-07-31

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Peter Platow ,  Edward C. Eisner ,  Shu Satoh

IPC: H01J37/141 ,  H01J37/21 ,  H01J37/244 ,  H01J37/317

Abstract: A magnetic focusing apparatus for focusing an ion beam has a first magnet pair, a first core having a first yoke and a pair of first pole members defining a pair of first poles. A second core has a second yoke and a pair of second pole members defining a pair of second poles. A first gap separates the pairs of first and second poles. First and second coils are respectively wound around the first and second cores. The pairs of first and second poles control a focus of the ion beam along a first plane based on a current, and the pairs of first and second poles define an exit trajectory of the ion beam along a second plane downstream of the first magnet pair. The exit trajectory does not angularly deviate along the second plane from an entrance trajectory upstream of the first magnet pair.

公开(公告)号：US12112918B2

公开(公告)日：2024-10-08

申请号：US18481111

申请日：2023-10-04

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom

IPC: H01J37/317 ,  G21K5/04 ,  H01J37/147 ,  H01L21/04

CPC classification number: H01J37/3171 ,  G21K5/04 ,  H01J37/1475 ,  H01L21/0415

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

公开(公告)号：US11887808B2

公开(公告)日：2024-01-30

申请号：US17523359

申请日：2021-11-10

Applicant: Axcelis Technologies, Inc.

Inventor： Atul Gupta ,  Scott E Galica

IPC: H01J37/20 ,  H01L21/683 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01L21/6833 ,  H01J37/3171 ,  H01J2237/2007

Abstract: A thermal electrostatic clamp has a central electrostatic portion associated with a central region of a workpiece. A central body has a clamping surface and one or more electrodes are associated with the central body. One or more electrodes selectively electrostatically clamp at least the central region of the workpiece to the clamping surface based on an electrical current passed therethrough. One or more first heaters of the central body selectively heat the central electrostatic portion to a first temperature. A non-electrostatic peripheral portion associated with a peripheral region of the workpiece has a peripheral body encircling the central body, separated by a gap. The peripheral body is positioned beneath the peripheral region of the workpiece. The peripheral portion does not electrostatically clamp the peripheral region of the workpiece. One or more second heaters of the peripheral body selectively heat the non-electrostatic peripheral portion to a second temperature.