公开(公告)号：US06791651B2

公开(公告)日：2004-09-14

申请号：US10293266

申请日：2002-11-14

申请人： Gyoo-Chul Jo ,  Gee-Sung Chae

发明人： Gyoo-Chul Jo ,  Gee-Sung Chae

IPC分类号： G02F11343

CPC分类号： G02F1/134363

摘要： An array substrate for an in-plane switching (IPS) mode liquid crystal display (LCD) device including a substrate, a plurality of gate lines disposed along a first direction on the substrate, a plurality of data lines disposed along a second direction perpendicular to the first direction on the substrate to define a plurality of pixel regions, a pixel electrode and a common electrode on the substrate, the pixel electrode including an extension portion, a plurality of vertical portions, and a horizontal portion, and a transparent electrode contacting the horizontal portion of the pixel electrode and extending over one of the gate lines, wherein the data line includes aluminum dual layer structure having a first metal layer and a second metal layer.

摘要翻译： 一种用于面内切换（IPS）模式液晶显示（LCD）装置的阵列基板，包括基板，沿着基板上的第一方向设置的多个栅极线，沿着垂直于第二方向的第二方向设置的多条数据线 基板上的第一方向以限定多个像素区域，像素电极和基板上的公共电极，像素电极包括延伸部分，多个垂直部分和水平部分，以及透明电极， 所述像素电极的水平部分并且延伸过所述栅极线之一，其中所述数据线包括具有第一金属层和第二金属层的铝双层结构。

公开(公告)号：US06337292B1

公开(公告)日：2002-01-08

申请号：US09430037

申请日：1999-10-29

申请人： Kwang Nam Kim ,  Gee Sung Chae

发明人： Kwang Nam Kim ,  Gee Sung Chae

IPC分类号： C23C1650

CPC分类号： H01J37/32082 ,  C23C16/402 ,  C23C16/5096 ,  H01J37/32165 ,  H01J37/32183 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L29/66757 ,  Y10S438/931

摘要： The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.

公开(公告)号：US08876998B2

公开(公告)日：2014-11-04

申请号：US13155790

申请日：2011-06-08

申请人： Jong Hyun Park ,  Chang Dong Kim ,  Gee Sung Chae ,  Juhn Suk Yoo ,  Soo Young Yoon ,  Soon Wook Cha ,  Won Bong Jang ,  Jae Kyung Choi

发明人： Jong Hyun Park ,  Chang Dong Kim ,  Gee Sung Chae ,  Juhn Suk Yoo ,  Soo Young Yoon ,  Soon Wook Cha ,  Won Bong Jang ,  Jae Kyung Choi

IPC分类号： B29C65/00 ,  B32B37/00 ,  B32B38/10 ,  B32B38/04 ,  B32B27/00 ,  B29C63/00 ,  C09J5/00 ,  H01L51/00

CPC分类号： H01L51/0097 ,  C09J5/00 ,  C09J2203/326 ,  C09J2205/302 ,  C09J2205/31 ,  H01L51/003 ,  H01L2251/5338 ,  Y02E10/549 ,  Y10T156/1168

摘要： Disclosed is a method for manufacturing a flexible device comprising: forming an adhesive layer on a support substrate; adhering a flexible substrate onto the adhesive layer; forming a device layer on the flexible substrate; and separating the support substrate from the flexible substrate, wherein the adhesive layer comprises a self-assembled monolayer (SAM).

摘要翻译： 公开了一种用于制造柔性装置的方法，包括：在支撑基板上形成粘合剂层; 将柔性基材粘附到粘合剂层上; 在柔性基板上形成器件层; 以及将所述支撑衬底与所述柔性衬底分离，其中所述粘合剂层包括自组装单层（SAM）。

公开(公告)号：US08426869B2

公开(公告)日：2013-04-23

申请号：US12721124

申请日：2010-03-10

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/336 ,  H01L33/00

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

摘要： A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.

摘要翻译： 薄膜晶体管包括：衬底上的硅纳米线，所述硅纳米线具有中心部分和所述中心部分的两个侧部; 中心部分上的栅电极; 以及源极电极和漏极电极，分别与两个侧部分上的源电极间隔开，源电极和漏电极分别与硅纳米线电连接。

公开(公告)号：US08384075B2

公开(公告)日：2013-02-26

申请号：US13495583

申请日：2012-06-13

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L29/08

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US08216889B2

公开(公告)日：2012-07-10

申请号：US13240391

申请日：2011-09-22

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/00

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US08062924B2

公开(公告)日：2011-11-22

申请号：US12656507

申请日：2010-02-01

申请人： Gee Sung Chae ,  Jae Seok Heo ,  Woong Gi Jun

发明人： Gee Sung Chae ,  Jae Seok Heo ,  Woong Gi Jun

IPC分类号： H01L51/40

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.

摘要翻译： 在衬底上制造TFT的方法包括：形成栅电极; 形成与栅电极绝缘并与栅电极部分重叠的半导体层; 在所述栅电极和所述半导体层之间形成栅极绝缘层，所述栅绝缘层包括溶胶 - 凝胶化合物; 以及在半导体层的两侧形成源极和漏极。

公开(公告)号：US20110273650A1

公开(公告)日：2011-11-10

申请号：US12869548

申请日：2010-08-26

申请人： Gee-Sung CHAE

发明人： Gee-Sung CHAE

IPC分类号： G02F1/1335 ,  H01L33/08

CPC分类号： G02F1/134363 ,  G02F1/133371 ,  G02F2001/136222 ,  G02F2201/121 ,  G09G3/3607 ,  G09G3/3648 ,  G09G3/3655 ,  G09G2300/0876

摘要： According to an embodiment, an array substrate for an LCD device includes a substrate; gate lines on the substrate along a first direction; data lines formed along a second direction and crossing the gate lines to define pixel regions; a common line between adjacent gate lines; a thin film transistor at each crossing point of the gate lines and the data lines; red, green and blue color filter patterns sequentially disposed in the pixel regions, respectively; a common electrode over each of the red, green and blue color filter patterns and connected to the common line; and a pixel electrode over the common electrode and connected to the thin film transistor, the pixel electrode overlapping the common electrode.

摘要翻译： 根据实施例，用于LCD装置的阵列基板包括基板; 沿着第一方向在基板上的栅极线; 数据线沿着第二方向形成并与栅极线交叉以限定像素区域; 相邻栅极线之间的公共线; 在栅极线和数据线的每个交叉点处的薄膜晶体管; 红色，绿色和蓝色滤色器图案分别顺序地设置在像素区域中; 每个红色，绿色和蓝色滤色器图案上的公共电极，并连接到公共线; 以及在所述公共电极上方并连接到所述薄膜晶体管的像素电极，所述像素电极与所述公共电极重叠。

公开(公告)号：US08039063B2

公开(公告)日：2011-10-18

申请号：US12821090

申请日：2010-06-22

申请人： Gee-Sung Chae

发明人： Gee-Sung Chae

IPC分类号： C09K19/00

CPC分类号： G02F1/133711 ,  B82Y30/00 ,  G02F1/133719 ,  G02F2001/133765 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1014 ,  Y10T428/1059 ,  Y10T428/1086

摘要： A method for fabricating an alignment film is provided. The method includes providing a substrate, forming a plurality of region defining strips at an interval on the substrate, and forming organic alignment strips for aligning liquid crystal molecules between the region defining strips by applying an organic alignment material on the substrate.

摘要翻译： 提供了一种制造取向膜的方法。 该方法包括提供衬底，在衬底上以间隔形成限定条的多个区域，以及形成有机取向条，用于通过在衬底上施加有机取向材料来在区域限定条之间对准液晶分子。

公开(公告)号：US08030107B2

公开(公告)日：2011-10-04

申请号：US12385869

申请日：2009-04-22

申请人： In Jae Chung ,  Gee Sung Chae

发明人： In Jae Chung ,  Gee Sung Chae

IPC分类号： H01L21/00

CPC分类号： H05B33/22 ,  H05B33/26

摘要： An electro-luminescent device includes a transparent substrate, a black matrix on the transparent substrate defining a plurality of spaces, a plurality of color representing layers each arranged in respective ones of the spaces, an overcoat layer on the black matrix and the color representing layers, a plurality of first electrodes disposed on the overcoat layer in a first direction with respect to the color representing layers, a phosphor layer formed on the plurality of first electrodes, an insulating film on the phosphor layer, and a plurality of second electrodes disposed on the insulating film in a second direction perpendicular to the first direction.

摘要翻译： 电致发光器件包括透明衬底，在透明衬底上限定多个空间的黑矩阵，分别布置在相应空间中的多个颜色表示层，黑矩阵上的外涂层和颜色表示层 相对于所述颜色表示层在第一方向上设置在所述外涂层上的多个第一电极，形成在所述多个第一电极上的荧光体层，所述荧光体层上的绝缘膜以及设置在所述荧光体层上的多个第二电极 所述绝缘膜在垂直于所述第一方向的第二方向上。