公开(公告)号：US20080025414A1

公开(公告)日：2008-01-31

申请号：US11828769

申请日：2007-07-26

Applicant: Eun-Chul KIM ,  Sang-In Lee ,  Yong-Ho Lee ,  Hyun-Jeong Shim ,  Hyo-Jin Kim

Inventor： Eun-Chul KIM ,  Sang-In Lee ,  Yong-Ho Lee ,  Hyun-Jeong Shim ,  Hyo-Jin Kim

IPC: H04N7/26

CPC classification number: H04N21/4382 ,  H04L65/608 ,  H04N19/12 ,  H04N19/164 ,  H04N19/40 ,  H04N21/2383 ,  H04N21/43637

Abstract: Disclosed is a Bluetooth® moving picture stream transmission terminal for moving picture data stream transmission through Bluetooth® to a moving picture output device. The Bluetooth® terminal provides the moving picture output device with the optimized streaming service by either acquiring the transcoding reference variable according to decoding function included in the moving picture output device when the Audio Video Distribution Transport Protocol (AVDTP) channel of the moving picture output device is opened, or acquiring the transcoding reference variable by using the newly defined transcoding reference variable request/response message after opening the AVDTP channel, and by setting an encoding environment with reference to the acquired transcoding reference variable, and encoding the corresponding moving picture and transmitting stream of the encoded moving picture through Bluetooth®.

Abstract translation: 公开了一种用于通过蓝牙将图像数据流传输到运动图像输出装置的蓝牙（R）运动图像流传输终端。 蓝牙终端当运动图像的音频视频分发传输协议（AVDTP）信道时，通过根据包括在运动图像输出设备中的解码功能来获取转码参考变量，为运动图像输出设备提供优化的流服务 输出设备打开，或者通过在打开AVDTP通道之后使用新定义的代码转换参考可变请求/响应消息来获取代码转换参考变量，并且通过参考获取的代码转换参考变量设置编码环境，并且对相应的运动图像进行编码 以及通过蓝牙（R）发送编码运动图像的流。

公开(公告)号：US20060020956A1

公开(公告)日：2006-01-26

申请号：US11185876

申请日：2005-07-21

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: G11B33/12 ,  G11B15/68

CPC classification number: G06F1/184 ,  G06F1/187 ,  G11B25/10 ,  G11B33/022 ,  G11B33/027

Abstract: A data recording/reproducing apparatus, includes: an open front housing having a base frame and a cover frame; a recording/reproducing unit installed in the housing to record/reproduce data in/from a predetermined recording medium; a circuit board installed parallel to the recording/reproducing unit in the housing; a front unit connected to the open front of the housing to support operation buttons; a first locking unit which locks the front unit and the recording/reproducing unit; and a second locking unit which locks the front unit and the housing at a position corresponding to the circuit board.

Abstract translation: 一种数据记录/再现装置，包括：具有基架和盖框架的敞开前壳; 安装在壳体中以在预定记录介质中记录/再现数据的记录/再现单元; 与壳体中的记录/再现单元平行安装的电路板; 连接到所述壳体的敞开前部以支撑操作按钮的前部单元; 第一锁定单元，其锁定前单元和记录/再现单元; 以及第二锁定单元，其将前单元和壳体锁定在对应于电路板的位置。

公开(公告)号：US20050239297A1

公开(公告)日：2005-10-27

申请号：US10956232

申请日：2004-09-30

Applicant: Yoshihide Senzaki ,  Sang-In Lee ,  Sattar Al-Lami

Inventor： Yoshihide Senzaki ,  Sang-In Lee ,  Sattar Al-Lami

IPC: C23C16/40 ,  C23C16/455 ,  H01L20060101 ,  H01L21/314 ,  H01L21/316 ,  H01L21/44

CPC classification number: C23C16/45527 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/31645

Abstract: In general, the present invention provides a method of depositing high-k dielectric films or layers, such as but not limited to high-k gate dielectric films. In one embodiment, atomic layer deposition (ALD) cycles are carried out where ozone is selectively conveyed to a chamber in separate cycles to form a metal oxide layer on the surface of a substrate where the metal oxide layer has an interfacial oxide layer of minimal thickness.

Abstract translation: 通常，本发明提供了沉积高k电介质膜或层的方法，例如但不限于高k栅介质膜。 在一个实施方案中，进行原子层沉积（ALD）循环，其中臭氧被选择性地以单独的循环传送到室，以在衬底的表面上形成金属氧化物层，其中金属氧化物层具有最小厚度的界面氧化物层 。

公开(公告)号：US06372598B1

公开(公告)日：2002-04-16

申请号：US09334588

申请日：1999-06-16

Applicant: Sang-bum Kang ,  Yun-sook Chae ,  Sang-in Lee ,  Hyun-seok Lim ,  Mee-young Yoon

Inventor： Sang-bum Kang ,  Yun-sook Chae ,  Sang-in Lee ,  Hyun-seok Lim ,  Mee-young Yoon

IPC: H01L2120

Abstract: A selective metal layer formation method, a capacitor formation method using the same, and a method of forming an ohmic layer on a contact hole and filling the contact hole using the same, are provided. A sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500° C. or lower.

公开(公告)号：US06284591B1

公开(公告)日：2001-09-04

申请号：US09299566

申请日：1999-04-27

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: H01L218242

CPC classification number: H01L27/10873 ,  H01L27/1052

Abstract: A method of forming an interconnection by using a landing pad is disclosed. In a semiconductor device having a memory cell portion and a peripheral circuit portion, a refractory metal is used for the bitline instead of the usual polycide, to concurrently form a contact on an active region of an N-type and a P-type substrate. A landing pad is formed on the peripheral circuit portion at the same time as a bitline is formed on the memory cell portion. In such a process, a substantial contact hole for the interconnection is formed on the landing pad so that an aspect ratio of the contact can be lowered. Accordingly, when forming a metal interconnection, the contact hole for the interconnection is easily filled by Al-reflow so that the step coverage of the metal being deposited in the contact hole for the interconnection is enhanced, and the contact resistance is reduced. As a result, the reliability of the semiconductor device is improved.

Abstract translation: 公开了一种通过使用着陆垫形成互连的方法。 在具有存储单元部分和外围电路部分的半导体器件中，难题金属用于位线而不是通常的多硅化物，以在N型和P型衬底的有源区上同时形成接触。 在存储单元部分上形成位线的同时，在外围电路部分上形成着键盘。 在这种过程中，用于互连的实质接触孔形成在着陆焊盘上，使得可以降低接触的纵横比。 因此，当形成金属互连时，易于通过Al回流填充用于互连的接触孔，使得沉积在用于互连的接触孔中的金属的台阶覆盖增强，并且接触电阻降低。 结果，提高了半导体器件的可靠性。

公开(公告)号：US06207487B1

公开(公告)日：2001-03-27

申请号：US09415830

申请日：1999-10-12

Applicant: Yeong-kwan Kim ,  Sang-in Lee ,  Chang-soo Park ,  Young-sun Kim

Inventor： Yeong-kwan Kim ,  Sang-in Lee ,  Chang-soo Park ,  Young-sun Kim

IPC: H01L218244

CPC classification number: H01L28/40 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/31691 ,  H01L28/55

Abstract: The present invention discloses a method for forming a dielectric film having improved leakage current characteristics in a capacitor. A lower electrode having a surface and a rounded protruding portion is formed on a semiconductor substrate. The surface and the protruding portion define at least one concave area. A chemisorption layer is then formed on the surface and the rounded protruding portion by supplying a first reactant. Also, a physisorption layer is formed on the chemisorption layer from the first reactant. Next, a portion of the physisorption layer is removed and a portion of the physisorption layer is left on the concave area. Subsequently, the chemisorption layer and the portion of the physisorption layer on the concave area react with a second reactant to form a dielectric film on the surface of the lower electrode. The thickness of said dielectric film is greater on the concave area than on the protruding portion, thereby reducing leakage current.

Abstract translation: 本发明公开了一种在电容器中形成具有改善的漏电流特性的电介质膜的方法。 在半导体衬底上形成具有表面和圆形突出部分的下电极。 表面和突出部分限定至少一个凹入区域。 然后通过提供第一反应物在表面和圆形突出部分上形成化学吸附层。 此外，在第一反应物的化学吸附层上形成物理吸附层。 接下来，去除一部分物理吸附层，并将一部分物理吸附层留在凹面上。 随后，化学吸收层和凹面上的物理吸附层的部分与第二反应物反应，以在下电极的表面上形成电介质膜。 所述电介质膜的厚度在凹区域上大于突出部分的厚度，从而减少漏电流。

公开(公告)号：US6087257A

公开(公告)日：2000-07-11

申请号：US751153

申请日：1996-11-15

Applicant: Byung-lyul Park ,  Jung-min Ha ,  Dae-hong Ko ,  Sang-in Lee

Inventor： Byung-lyul Park ,  Jung-min Ha ,  Dae-hong Ko ,  Sang-in Lee

IPC: H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76855 ,  H01L21/76843 ,  H01L21/76879

Abstract: Methods for fabricating a tungsten nitride layer in a semiconductor substrate having an insulating layer formed thereon. The methods include forming a contact hole through the insulating layer. A tungsten nitride layer is then selectively deposited only in the contact hole by selectively reacting a nitrogen-containing gas with a tungsten source gas so as to prevent formation of tungsten nitride layer on the insulating layer outside the contact hole. Methods or fabricating metal wiring utilizing the methods of fabricating a tungsten nitride layer are also provided.

Abstract translation: 在其上形成有绝缘层的半导体衬底中制造氮化钨层的方法。 所述方法包括形成穿过绝缘层的接触孔。 然后通过选择性地使含氮气体与钨源气体反应来选择性地沉积氮化钨层，以防止在接触孔外部的绝缘层上形成氮化钨层。 还提供了利用制造氮化钨层的方法或制造金属布线的方法。

公开(公告)号：US5998870A

公开(公告)日：1999-12-07

申请号：US873869

申请日：1997-06-12

Applicant: Sang-in Lee ,  Sun-ho Ha

Inventor： Sang-in Lee ,  Sun-ho Ha

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC classification number: H01L21/76876 ,  H01L21/28518 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76882 ,  Y10S257/915

Abstract: A wiring structure of a semiconductor device buries an aperture, for example, a contact hole or via hole. The wiring structure includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate and having an aperture formed therein, a diffusion barrier film formed on the inner sidewalls of the aperture and which has a smooth surface without having grain boundaries made of a refractory metal or refractory metal compound, and a metal layer formed on the diffusion barrier film. The metal layer formed on the smooth sidewalls of the diffusion barrier film is made of a uniformly and continuously formed aluminum film having an excellent step coverage. Accordingly, the method for forming the wiring structure effectively buries a contact hole having a high aspect ratio and enhances the reliability of a manufactured device.

Abstract translation: 半导体器件的布线结构掩埋孔，例如接触孔或通孔。 布线结构包括半导体衬底，形成在半导体衬底上并具有形成在其中的孔的绝缘层，形成在孔的内侧壁上并且具有光滑表面而不具有由难熔金属制成的晶界的扩散阻挡膜 或难熔金属化合物，以及形成在扩散阻挡膜上的金属层。 形成在扩散阻挡膜的平滑侧壁上的金属层由均匀且连续形成的具有优异的台阶覆盖率的铝膜制成。 因此，用于形成布线结构的方法有效地掩盖了具有高纵横比的接触孔，并提高了所制造的器件的可靠性。

公开(公告)号：US5918118A

公开(公告)日：1999-06-29

申请号：US931821

申请日：1997-09-16

Applicant: Jin-Won Kim ,  Cheal-Seong Hwang ,  Sang-In Lee

Inventor： Jin-Won Kim ,  Cheal-Seong Hwang ,  Sang-In Lee

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/28 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/04 ,  H01L27/108 ,  H01L21/283 ,  H01L21/70

CPC classification number: H01L27/10852 ,  H01L21/76895 ,  H01L28/60

Abstract: A method for forming a dynamic random access memory device includes the step of forming a memory cell access transistor on a semiconductor substrate wherein the memory cell access transistor includes a source/drain region at a surface of the semiconductor substrate. An insulating layer is formed on the semiconductor substrate and on the memory cell access transistor wherein the insulating layer has a contact hole therein exposing a portion of the source/drain region of the substrate. A first conductive layer is chemical vapor deposited on the exposed portion of the source/drain region of the substrate, and a second conductive layer is physical vapor deposited on the first conductive layer opposite the substrate. A dielectric layer is formed on the second conductive layer opposite the substrate, and a third conductive layer is formed on the dielectric layer opposite the substrate.

Abstract translation: 一种用于形成动态随机存取存储器件的方法包括在半导体衬底上形成存储单元存取晶体管的步骤，其中存储单元存取晶体管包括在半导体衬底的表面处的源/漏区。 绝缘层形成在半导体衬底和存储单元存取晶体管上，其中绝缘层具有其中暴露衬底的源/漏区的一部分的接触孔。 第一导电层被化学气相沉积在衬底的源极/漏极区域的暴露部分上，并且第二导电层物理气相沉积在与衬底相对的第一导电层上。 在与衬底相对的第二导电层上形成电介质层，并且在与衬底相对的电介质层上形成第三导电层。

公开(公告)号：US5355020A

公开(公告)日：1994-10-11

申请号：US910894

申请日：1992-07-08

Applicant: Sang-in Lee ,  Jeong-in Hong ,  Jong-ho Park

Inventor： Sang-in Lee ,  Jeong-in Hong ,  Jong-ho Park

IPC: H01L23/52 ,  H01L21/027 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48

CPC classification number: H01L21/76843 ,  H01L21/0276 ,  H01L21/28512 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53271 ,  H01L2924/0002

Abstract: A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via) and a first conductive layer formed on the insulating layer which completely fills the opening. The first conductive layer does not produce any Si precipitates in a subsequent heat-treating step for filling the opening with the first conductive layer material. The semiconductor device may further include a second conductive layer having a planarized surface on the first conductive layer. This improves subsequent photolithography. An anti-reflective layer may be formed on the second conductive layer for preventing an unwanted reflection during a photo lithography process. The semiconductor device preferably includes a diffusion barrier layer under the first conductive layer and on the semiconductor substrate, on the insulating layer, and on the inner surface of the opening which prevents a reaction between the first conductive layer and the semiconductor substrate or the insulating layer. A method for forming the wiring layer is also disclosed. Providing a semiconductor device with the wiring layer reduces the leakage current by preventing an Al spiking. Since the first conductive layer undergoes a heat-treatment step at a temperature below the melting point, while flowing into the opening and completely filling it with the first conductive layer material, no void is formed in the opening. Good semiconductor device reliability is ensured in spite of the contact hole being less than 1 .mu.m in size and having an aspect ratio greater than 1.0.

Abstract translation: 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层和形成在绝缘层上的完全填充开口的第一导电层。 在随后的用第一导电层材料填充开口的热处理步骤中，第一导电层不产生任何Si沉淀物。 半导体器件还可以包括在第一导电层上具有平坦化表面的第二导电层。 这改善了随后的光刻。 可以在第二导电层上形成抗反射层，以防止在光刻工艺期间不期望的反射。 半导体器件优选地包括在第一导电层下方，半导体衬底上的绝缘层上的扩散阻挡层，以及防止第一导电层与半导体衬底或绝缘层之间的反应的开口内表面 。 还公开了一种用于形成布线层的方法。 提供具有布线层的半导体器件通过防止Al尖峰来减少泄漏电流。 由于第一导电层在低于熔点的温度下经历热处理步骤，同时流入开口并用第一导电层材料完全填充，因此在开口中不形成空隙。 尽管接触孔的尺寸小于1μm，纵横比大于1.0，仍然保证良好的半导体器件的可靠性。