摘要:
A blowing fan includes: a hub connected to a rotational shaft of a motor and receiving a driving force of the motor; and a plurality of blades connected at equal intervals in a circumferential direction of the hub and generating a blowing force, in which a connection between the blades and the hub has an area-reduced form in order to reduce a rigidity of the connection portion. The rigidity between a hub where a rotational shaft is fixed and a blade is weakened to lower a torsional resonant frequency of the rotational shaft. Thus, a noise of a refrigerator is considerably reduced.
摘要:
Disclosed is a method of synthesizing Fe powders having sizes of tens of nm by vaporizing an iron atom-containing liquid material with a low melting point at high temperatures, and then condensing iron atoms in decomposed Fe and CO gas by chemical vapor condensation. According to the current invention, the synthesizing method includes vaporizing iron pentacarbonyl (Fe(CO)5) or iron acetate ((CH3CO2)2Fe) precursor to gas by use of a ceramic bubbler of a chemical vapor condensation device, decomposing the vaporized gas to Fe in a reactor of the device while being introduced with Ar gas, and condensing the decomposed Fe in a chamber of the device, thereby obtaining the Fe powders having sizes of tens of nm.
摘要翻译:公开了通过在高温下蒸发低熔点的含铁原子的液体材料,然后通过化学气相冷凝将铁原子分解成Fe和CO气体来合成尺寸为几十nm的Fe粉末的方法。 根据本发明,合成方法包括将五羰基铁(Fe(CO)5 N)或乙酸铁((CH 3 CO 2) )2)Fe)前体,通过使用化学气相冷凝装置的陶瓷起泡器,在引入Ar气体的同时在装置的反应器中将汽化气体分解成Fe,并将分解的 Fe,从而得到尺寸为几十nm的Fe粉末。
摘要:
A hinge apparatus of a drum for a clothing drier includes a front hinge portion formed between a front of a case and a front of a drum, for rotatably supporting the front of the drum; and a rear hinge portion installed between a rear of the case and a rear of the drum, and for supporting the rear of the drum so as to swing in vertical and horizontal directions, so that the drum can be smoothly rotated without being eccentric even in case that the center of rotation of the front of the drum is different from that of the rear of the drum, and also noise and vibration generated when the drum is rotated can be minimized.
摘要:
The present invention provides surface modification methods of pancreatic islet membranes by polymeric grafting. Particularly, the present invention provides the surface modification methods that hydrophilic polymer chain is grafted onto collagen membranes of the pancreatic islets by various polymeric grafting methods instead of encapsulation of the pancreatic islets. Since the surface modification methods of the present invention minimize immunorejection without islet damage in islet transplantation, extend efficiency and survival time of the pancreatic islets by maintaining a high diffusion rate of oxygen and nutrient and reduce total volume of the pancreatic islets required for islet transplantation, they can be effectively used for transplantation of the pancreatic islets.
摘要:
An apparatus for generating a DBI signal in a semiconductor memory apparatus includes a data switching detection unit that detects whether or not previous data is consistent with current data and outputs a detection signal according to a detection result, and a DBI detection unit that outputs a DBI signal according to a difference in charge sharing level using the detection signal. Therefore, it is possible to minimize current consumption. Further, since there is no effect due to resistance skew of a transistor, an error in DBI signal generation and an error in data transfer accordingly can be prevented. Therefore, it is possible to improve the reliability of a system to which a semiconductor memory apparatus is applied.
摘要:
The present invention relates to a new binaphthalene derivative, a preparation method thereof, and an organic electronic device using the same. The binaphthalene derivative according to the present invention can perform functions of hole injection and transportation, electron injection and transportation, or light emission in an organic electronic device including an organic light-emitting device, and the device according to the present invention has excellent characteristics in terms of efficiency, drive voltage and stability, and in particular excellent effects such as a low voltage and a long life time.
摘要:
An apparatus for outputting data of a semiconductor memory apparatus, which is capable of varying the slew rate and the data output timing, includes a bias generator that generates a bias having a level corresponding to a set value, a slew rate controller that controls a pull-up slew rate or a pull-down slew rate of input data on the basis of the bias generated by the bias generator, and a data outputting unit that outputs data on the basis of the slew rate controlled by the slew rate controller. Therefore, it is possible to satisfy various operational conditions without changing the structure of the circuit and to correspond rapidly and appropriately with a change of the system, which enables the applied range of the products to be extended.
摘要:
The invention provides a lens transfer device including at least one lens and a lens barrel. The lens barrel has a lens receiving part with the lens arranged in an inner space thereof and an extension extending radially from an outer surface of the lens receiving part. An actuator has a body and an output member at a leading end of the actuator to contact the extension, and is adapted to expand/contract and bend in response to an external supply voltage to provide a driving force necessary for transfer of the lens barrel through the output member. A pressing member has a free end contacting a rear end of the actuator to force the actuator against the extension, and a guide guides the transfer of the lens barrel along an optical axis.
摘要:
A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.