-
公开(公告)号：US20180330779A1
公开(公告)日：2018-11-15
申请号：US15590521
申请日：2017-05-09
Applicant: International Business Machines Corporation
Inventor： John K. DeBrosse , William E. Hall , Hillery C. Hunter , Jeffrey A. Stuecheli , Daniel C. Worledge
CPC classification number: G11C11/5607 , G06F11/2215 , G11C16/105 , G11C16/3445 , G11C16/3459 , G11C16/3463 , G11C16/3481
Abstract: Techniques for improving the security of nonvolatile memory such as magnetic random access memory (MRAM) are provided. In one aspect, a method of operating a nonvolatile memory chip is provided. The method includes: overwriting data stored on the nonvolatile memory chip automatically upon the nonvolatile memory chip being powered on. For example, all bits in the nonvolatile memory chip can be written to either i) a predetermined data state (e.g., a logic 1 or a logic 0) or ii) a random data state. A system is also provided that includes: a nonvolatile memory chip; and a writing circuit configured to overwrite data stored on the nonvolatile memory chip automatically upon the nonvolatile memory chip being powered on.
-
112.发明申请公开(公告)号：US20180315918A1
公开(公告)日：2018-11-01
申请号：US16026381
申请日：2018-07-03
Applicant: International Business Machines Corporation
Inventor： Anthony J. Annunziata , Joel D. Chudow , Daniel C. Worledge
Abstract: Embodiments are directed to a sensor having a first electrode, a second electrode and a detector region electrically coupled between the first electrode region and the second electrode region. The detector region includes a first layer having a topological insulator. The topological insulator includes a conducting path along a surface of the topological insulator, and the detector region further includes a second layer having a first insulating magnetic coupler, wherein a magnetic field applied to the detector region changes a resistance of the conducting path.
-
公开(公告)号：US10109786B2
公开(公告)日：2018-10-23
申请号：US15830604
申请日：2017-12-04
Applicant: International Business Machines Corporation
Inventor： Rolf Allenspach , Anthony J. Annunziata , Daniel C. Worledge , See-Hun Yang
Abstract: A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer and a free magnetic layer, and an insulating barrier layer there-between. Each of the magnetic layers has an out-of-plane magnetization orientation. The junction is configured so as to allow a spin-polarized current flow generated from one of the two magnetic layers to the other to initiate an asymmetrical switching of the magnetization orientation of the free layer. The switching is off-centered toward an edge of the stack. The junction may allow a spin-polarized current flow that is off-centered toward an edge of the stack, from one of the two magnetic layers to the other, to initiate the asymmetrical switching. Related devices and methods of operation are also provided.
-
114.发明申请公开(公告)号：US20180277190A1
公开(公告)日：2018-09-27
申请号：US15794425
申请日：2017-10-26
Applicant: International Business Machines Corporation
Inventor： Daniel C. Worledge
Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element having a reference layer formed from a reference layer material having a fixed magnetization direction, along with a free layer formed from a free layer material having a switchable magnetization direction. The MTJ is configured to receive a write pulse having a write-pulse and spin-transfer-torque (WP-STT) start time, a WP-STT start segment duration and a write pulse duration. The WP-STT start segment duration is less than the write pulse duration. The fixed magnetization direction is configured to form an angle between the fixed magnetization direction and the switchable magnetization direction. The angle is sufficient to generate spin torque electrons in the reference layer material at the WP-STT start time. The spin torque electrons generated in the reference layer material is sufficient to initiate switching of the switchable magnetization direction at the WP-STT start time.
-
公开(公告)号：US09947383B1
公开(公告)日：2018-04-17
申请号：US15440761
申请日：2017-02-23
Applicant: International Business Machines Corporation
Inventor： Luqiao Liu , Jonathan Z. Sun , Daniel C. Worledge
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1693 , G11C11/18 , H01L43/02 , H01L43/08
Abstract: A magneto-resistance random access memory (MRAM) cell includes a transistor, a wire and a magnetic tunnel junction (MTJ). The MTJ includes a fixed layer of fixed magnetic polarity electrically connected with the transistor, a free layer of variable magnetic polarity electrically connected with the wire and an insulator between the fixed and free layers. First current passed through the wire destabilizes the variable magnetic polarity of the free layer. Second current passed through the transistor in one of two directions during first current passage through the wire directs the variable magnetic polarity of the free layer toward a parallel or anti-parallel condition with respect to the fixed magnetic polarity of the fixed layer. A ceasing of the first current prior to a ceasing of the second current sets the variable magnetic polarity of the free layer in the parallel or anti-parallel condition.
-
Patent Agency Ranking
公开(公告)号：US20180097174A1
公开(公告)日：2018-04-05
申请号：US15830604
申请日：2017-12-04
Applicant: International Business Machines Corporation
Inventor： Rolf Allenspach , Anthony J. Annunziata , Daniel C. Worledge , See-Hun Yang
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1675 , H01L43/08 , H01L43/10
Abstract: A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer and a free magnetic layer, and an insulating barrier layer there-between. Each of the magnetic layers has an out-of-plane magnetization orientation. The junction is configured so as to allow a spin-polarized current flow generated from one of the two magnetic layers to the other to initiate an asymmetrical switching of the magnetization orientation of the free layer. The switching is off-centered toward an edge of the stack. The junction may allow a spin-polarized current flow that is off-centered toward an edge of the stack, from one of the two magnetic layers to the other, to initiate the asymmetrical switching. Related devices and methods of operation are also provided.
-
公开(公告)号：US09892840B2
公开(公告)日：2018-02-13
申请号：US15629225
申请日：2017-06-21
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01F10/329 , G11C11/161 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetoresistive random access memory devices include a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. The tunnel barrier layer includes a first barrier layer formed from a first material and a second barrier layer formed from a second material different from the first material, the second layer being present only in the second regions.
-
公开(公告)号：US09786837B2
公开(公告)日：2017-10-10
申请号：US14887856
申请日：2015-10-20
Inventor： Anthony J. Annunziata , Lucian Prejbeanu , Philip L. Trouilloud , Daniel C. Worledge
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1677 , G11C11/5607 , H01L43/08 , H01L43/12
Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.
-
119.发明申请公开(公告)号：US20170279035A1
公开(公告)日：2017-09-28
申请号：US15609647
申请日：2017-05-31
Applicant: International Business Machines Corporation
Inventor： Anthony J. Annunziata , Joel D. Chudow , Daniel C. Worledge
CPC classification number: H01L43/02 , G01R33/09 , G01R33/1269 , G01R33/1276 , H01L43/08 , H01L43/12
Abstract: Embodiments are directed to a sensor having a first electrode, a second electrode and a detector region electrically coupled between the first electrode region and the second electrode region. The detector region includes a first layer having a topological insulator. The topological insulator includes a conducting path along a surface of the topological insulator, and the detector region further includes a second layer having a first insulating magnetic coupler, wherein a magnetic field applied to the detector region changes a resistance of the conducting path.
-
公开(公告)号：US20170170391A1
公开(公告)日：2017-06-15
申请号：US15442954
申请日：2017-02-27
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01L43/10 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
-
-
-
-
-
-
-
-
-
Search Results
135
records
(took 0.028 seconds)
