Abstract:
A command conversion interface between an image machine with a plurality of hard keys and an image requestor is disclosed. When the command conversion interface detects and determines the activation of a specific hard key of the image machine, digital image information from the image machine is provided for the image requestor through the command conversion interface to execute a designated task, which has not been built in the image machine. In the command conversion interface, the designated task is interpreted by a destination command script, and the destination command script is processed by a compiler along with the digital image information, then transmitted to the image requestor to execute the task. The relationship between the specific hard key and the designated task refers to a new correlation table of the command conversion interface.
Abstract:
A semiconductor device and manufacturing method thereof are disclosed. The device comprises a semiconductor die, a passivation layer, a wiring redistribution layer (RDL), an Ni/Au layer, and a solder mask. The semiconductor die comprises a top metal exposed in an active surface thereof. The passivation layer overlies the active surface of the semiconductor die, and comprises a through passivation opening overlying the top metal. The wiring RDL, comprising an Al layer, overlies the passivation layer, and electrically connects to the top metal via the passivation opening. The solder mask overlies the passivation layer and the wiring RDL, exposing a terminal of the wiring RDL.
Abstract:
A grommet for sealing the wires extending through the wall of a fuel tank is formed by first removing a portion of the covering exposing the strands of wires within. A liquid sealing agent is applied to the strands and the strands are compressed to displace the strands. A hardener is then applied and then the strands are encapsulated in the body of the grommet.
Abstract:
Methods, systems and program products for hiding the presentation of a first input field that would obscure the presentation of a distinct second input field on a display device. User input directed to the second input field is accepted and provided the first input field instead of to the second input field. The contents of the first input field are copied to the second input field. The presentation of the second input field is updated on the display device to include the copied contents.
Abstract:
A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
Abstract translation:提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 清洁斜面边缘,包括提供包括CO 2,CO,C x H y,H 2,NH 3,C x H y Fz及其组合中的至少一种的清洁气体,从清洁气体形成清洁等离子体,并将斜面边缘暴露于清洁等离子体 。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中,并去除光致抗蚀剂掩模。
Abstract:
Methods and systems to perform a computer task in a reduced power consumption state, including to virtualize physical resources with respect to an operating environment and service environment, to exit the operating environment and enter the service environment, to place a first set of one or more of the physical resources in a reduced power consumption state, and to perform a task in the service environment utilizing a processor and a second set of one or more of the physical resources. A physical resource may be assigned to an operating environment upon an initialization of the operating environment, and re-assigned to the service environment to be utilized by the service environment while other physical resources are placed in a reduced power consumption state.
Abstract:
A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.
Abstract:
A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.
Abstract:
Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.
Abstract:
A microfabricated temperature sensor. The sensor comprises a polymer-based substrate and a resistance temperature device (RTD) disposed on the substrate. The RTD comprises a thin-film metal.