Command conversion interface between image provider and image requestor
    111.
    再颁专利
    Command conversion interface between image provider and image requestor 有权
    图像提供者和图像请求者之间的命令转换接口

    公开(公告)号:USRE42595E1

    公开(公告)日:2011-08-02

    申请号:US11961980

    申请日:2007-12-20

    CPC classification number: G06F9/45512

    Abstract: A command conversion interface between an image machine with a plurality of hard keys and an image requestor is disclosed. When the command conversion interface detects and determines the activation of a specific hard key of the image machine, digital image information from the image machine is provided for the image requestor through the command conversion interface to execute a designated task, which has not been built in the image machine. In the command conversion interface, the designated task is interpreted by a destination command script, and the destination command script is processed by a compiler along with the digital image information, then transmitted to the image requestor to execute the task. The relationship between the specific hard key and the designated task refers to a new correlation table of the command conversion interface.

    Abstract translation: 公开了具有多个硬键的图像机与图像请求器之间的命令转换接口。 当命令转换接口检测并确定图像机的特定硬键的激活时,通过命令转换接口为图像请求者提供来自图像机的数字图像信息,以执行尚未内置的指定任务 图像机。 在命令转换界面中,指定的任务由目标命令脚本解释,目标命令脚本与数字图像信息一起由编译器处理,然后发送给图像请求者执行任务。 特定硬键与指定任务之间的关系是指命令转换接口的新的相关表。

    Method and apparatus for blocking the escape of fuel vapors from a fuel tank
    113.
    发明授权
    Method and apparatus for blocking the escape of fuel vapors from a fuel tank 失效
    用于阻止燃料蒸气从燃料箱逸出的方法和装置

    公开(公告)号:US07842210B2

    公开(公告)日:2010-11-30

    申请号:US11371961

    申请日:2006-03-09

    Applicant: Jack Chen

    Inventor: Jack Chen

    Abstract: A grommet for sealing the wires extending through the wall of a fuel tank is formed by first removing a portion of the covering exposing the strands of wires within. A liquid sealing agent is applied to the strands and the strands are compressed to displace the strands. A hardener is then applied and then the strands are encapsulated in the body of the grommet.

    Abstract translation: 用于密封延伸穿过燃料箱壁的电线的索环通过首先去除暴露其内部的电线的部分覆盖物而形成。 将液体密封剂施加到股线上并且股线被压缩以置换股线。 然后施加固化剂,然后将线束包封在索环的主体中。

    Rendering text in a brew device
    114.
    发明授权
    Rendering text in a brew device 有权
    在酿造设备中呈现文本

    公开(公告)号:US07743339B1

    公开(公告)日:2010-06-22

    申请号:US11670333

    申请日:2007-02-01

    CPC classification number: G06F9/451 H04M1/72519

    Abstract: Methods, systems and program products for hiding the presentation of a first input field that would obscure the presentation of a distinct second input field on a display device. User input directed to the second input field is accepted and provided the first input field instead of to the second input field. The contents of the first input field are copied to the second input field. The presentation of the second input field is updated on the display device to include the copied contents.

    Abstract translation: 用于隐藏第一输入字段的呈现的方法,系统和程序产品,其将掩盖显示设备上的明显的第二输入字段的呈现。 接受指向第二输入字段的用户输入被接受并提供第一输入字段而不是第二输入字段。 第一个输入字段的内容被复制到第二个输入字段。 在显示装置上更新第二输入字段的呈现以包括复制的内容。

    Low-k damage avoidance during bevel etch processing
    115.
    发明授权
    Low-k damage avoidance during bevel etch processing 有权
    斜角蚀刻加工过程中的低k损伤避免

    公开(公告)号:US07718542B2

    公开(公告)日:2010-05-18

    申请号:US11510309

    申请日:2006-08-25

    Abstract: A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

    Abstract translation: 提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 清洁斜面边缘,包括提供包括CO 2,CO,C x H y,H 2,NH 3,C x H y Fz及其组合中的至少一种的清洁气体,从清洁气体形成清洁等离子体,并将斜面边缘暴露于清洁等离子体 。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中,并去除光致抗蚀剂掩模。

    METHODS AND SYSTEMS TO PERFORM A COMPUTER TASK IN A REDUCED POWER CONSUMPTION STATE
    116.
    发明申请
    METHODS AND SYSTEMS TO PERFORM A COMPUTER TASK IN A REDUCED POWER CONSUMPTION STATE 有权
    在降低功耗状态下执行计算机任务的方法和系统

    公开(公告)号:US20100083260A1

    公开(公告)日:2010-04-01

    申请号:US12241849

    申请日:2008-09-30

    CPC classification number: G06F1/3203

    Abstract: Methods and systems to perform a computer task in a reduced power consumption state, including to virtualize physical resources with respect to an operating environment and service environment, to exit the operating environment and enter the service environment, to place a first set of one or more of the physical resources in a reduced power consumption state, and to perform a task in the service environment utilizing a processor and a second set of one or more of the physical resources. A physical resource may be assigned to an operating environment upon an initialization of the operating environment, and re-assigned to the service environment to be utilized by the service environment while other physical resources are placed in a reduced power consumption state.

    Abstract translation: 在降低的功耗状态下执行计算机任务的方法和系统,包括虚拟化相对于操作环境和服务环境的物理资源,以退出操作环境并进入服务环境,以放置第一组一个或多个 的物理资源,并且使用处理器和一个或多个物理资源的第二组在服务环境中执行任务。 物理资源可以在操作环境的初始化时被分配给操作环境,并且被重新分配给要由服务环境利用的服务环境,而其他物理资源被置于降低的功耗状态。

    OFFSET CORRECTION TECHNIQUES FOR POSITIONING SUBSTRATES WITHIN A PROCESSING CHAMBER
    117.
    发明申请
    OFFSET CORRECTION TECHNIQUES FOR POSITIONING SUBSTRATES WITHIN A PROCESSING CHAMBER 有权
    用于在加工室中定位基板的偏移校正技术

    公开(公告)号:US20090088887A1

    公开(公告)日:2009-04-02

    申请号:US12237155

    申请日:2008-09-24

    CPC classification number: H01L21/681 H01L21/68

    Abstract: A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.

    Abstract translation: 提供了一种将基板对准支撑机构的处理中心的方法。 该方法包括在基板处理之后确定基板厚度,该基板在多个取向并且距离基板的几何中心的多个径向距离处。 该方法还包括从衬底厚度和工艺持续时间导出一组工艺速率值。 该方法还包括为处理速率创建一个偏心图,该偏心图表示基本上同心的圆,其点是具有基本上第一处理速率的偏心图的周长。 该方法还包括将曲线拟合方程应用于偏心图以确定一组参数。 该方法还包括向一组机器人手臂提供一组参数,从而使得该组机器人臂将由支撑机构支撑的另一个基板与处理中心对准。

    Offset correction techniques for positioning substrates
    118.
    发明授权
    Offset correction techniques for positioning substrates 有权
    用于定位基板的偏移校正技术

    公开(公告)号:US07479236B2

    公开(公告)日:2009-01-20

    申请号:US11612355

    申请日:2006-12-18

    Abstract: A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.

    Abstract translation: 提供了一种用于计算处理室中的卡盘的处理中心的方法。 该方法包括产生预处理和后处理测量数据点,其通过以一组取向和距衬底几何中心的一组距离测量薄膜衬底的厚度来执行。 该方法还包括比较预处理和后处理测量数据点以计算一组蚀刻深度数。 该方法还包括为该组取向生成蚀刻轮廓。 该方法还包括从蚀刻轮廓推断与第一蚀刻深度相关联的一组半径。 该方法还包括生成偏心图,其是该组半径与该组取向的图形表示。 更多的方法包括通过对偏心图应用曲线拟合方程来计算过程中心。

    METHOD AND APPARATUS FOR WAFER EDGE PROCESSING
    119.
    发明申请
    METHOD AND APPARATUS FOR WAFER EDGE PROCESSING 审中-公开
    WAF边缘加工方法与装置

    公开(公告)号:US20080156772A1

    公开(公告)日:2008-07-03

    申请号:US11618572

    申请日:2006-12-29

    Abstract: Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.

    Abstract translation: 在等离子体斜面蚀刻期间用于补救对基板的电弧相关损伤的方法和装置。 等离子体屏蔽设置在衬底之上,以防止在两个环形接地板之间产生的等离子体到达衬底上暴露的金属化。 另外或替代地,可以采用无碳氟化处理源气体和/或在等离子体产生期间逐渐斜升RF偏置功率以减轻斜面蚀刻期间的电弧相关损伤。 另外或替代地,可以将氦和/或氢加入到工艺源气体中以减轻斜面蚀刻期间的电弧相关损伤。

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