摘要:
This disclosure relates generally to resistive memory systems. The resistive memory systems may be utilized to implement neuro-inspired learning algorithms with full parallelism. In one embodiment, a resistive memory system includes a cross point resistive network and switchable paths. The cross point resistive network includes variable resistive elements and conductive lines. The conductive lines are coupled to the variable resistive elements such that the conductive lines and the variable resistive elements form the cross point resistive network. The switchable paths are connected to the conductive lines so that the switchable paths are operable to selectively interconnect groups of the conductive lines such that subsets of the variable resistive elements each provide a combined variable conductance. With multiple resistive elements in the subsets, process variations in the conductances of the resistive elements average out. As such, learning algorithms may be implemented with greater precision using the cross point resistive network.
摘要:
In general, each parallel test operation on Static Random Access Memory (SRAM) cells is a test operation performed on a block of the SRAM cells in parallel, or simultaneously. In one embodiment, the SRAM cells are arranged into multiple rows and multiple columns where the columns are further arranged into one or more column groups. The block of the SRAM cells for each parallel test operation includes SRAM cells in two or more of the rows, SRAM cells in two or more columns in the same column group, or both SRAM cells in two or more rows and SRAM cells in two or more columns in the same column group.
摘要:
Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. According to the embodiments herein, the optimization can be accelerated by iteratively using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
摘要:
A system that automatically discerning the best combinations of a user query's geographical origin and language, retrieving and displaying search results accordingly. A record on the system are associated with a geographic location and a language. A record could be composed of two or more records, each of which associates with a location and a language. A record could be in rich media format.
摘要:
A system that facilitates publishing and consuming information that is of time sensitivity, for example, price information. Methods are employed to achieve completeness and freshness in information for a given domain. A preferred embodiment is a shopping site that is capable of comparing prices, purchasing bundled products and dealing with coupons.
摘要:
A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
摘要:
A pharmaceutical composition for the oral administration of a therapeutic compound of formula (I), comprising granules that comprise at least therapeutic compound of formula (I) or a tautomer thereof, or a pharmaceutically acceptable salt, or a hydrate or solvate thereof; at least one non-ionic surfactant that is Vitamin E-TPGS in an amount ranging from about 15 to about 80% by weight of the composition; and at least one a dissolution enhancing agent selected from polyethylene glycol, polyethylene oxide, and any combination of the foregoing; processes for making such pharmaceutical compositions; a kit comprising such pharmaceutical composition and the instructions for administration thereof; and related uses and methods of treatment.
摘要:
The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.
摘要:
A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. In one given embodiment, the function for simulating the aerial images with focus and dose (exposure) variation is defined as: I(x,f,1+ε)=I0(x)+└ε·I0(x)+(1+ε)·a(x)·(f−f0)+(1+ε)·b(x)·(f−f0)2┘ where IO represents image intensity at nominal focus and exposure, fO represents nominal focus, f and ε represent an actual focus-exposure level at which the simulated image is calculated, and parameters “a” and “b” represent first order and second order derivative images with respect to focus change.