Planar-type avalanche photodiode
    112.
    发明授权
    Planar-type avalanche photodiode 有权
    平面型雪崩光电二极管

    公开(公告)号:US06229162B1

    公开(公告)日:2001-05-08

    申请号:US09294085

    申请日:1999-04-19

    申请人: Isao Watanabe

    发明人: Isao Watanabe

    IPC分类号: H01L310328

    CPC分类号: H01L31/107

    摘要: With the object of providing a high-speed high-sensitivity planar-type avalanche photodiode (APD) that has high reliability, great manufacturing tolerance and a wide dynamic range, there is presented a planar-type avalanche photodiode, having on a semiconductor substrate a layered structure comprising specific 6 layers, a specific conductive-type acquired region in a peripheral section of a photo-sensitive region and a specific ring-shaped isolation trench region in said photo-sensitive region, wherein a ring-shaped region of the second conductive-type semiconductor cap layer that is inscribed in said ring-shaped isolation trench and located in the periphery of the photo-sensitive region is formed thin to have a thickness equal to or less than the thickness of said semiconductor multiplication layer, and the first conductive-type semiconductor field buffer layer located directly under the ring-shaped cap region, together with a peripheral region in the field buffer layer, is formed to have a lower carrier concentration than the first conductive-type field buffer layer in said photo-sensitive region.

    摘要翻译: 为了提供具有高可靠性,高制造公差和宽动态范围的高速高灵敏度平面型雪崩光电二极管(APD)的目的,提出了一种平面型雪崩光电二极管,其在半导体衬底上具有 包含特定6层的层状结构,光敏区域的周边部分中的特定导电类型获取区域和所述光敏区域中的特定环形隔离沟槽区域,其中第二导电 内置在所述环形隔离沟槽中并位于光敏区域周边的半导体盖层形成为薄至具有等于或小于所述半导体倍增层的厚度的厚度,并且第一导电 位于环形帽区域正下方的半导体场缓冲层与场缓冲层中的周边区域一起形成为 具有比所述光敏区域中的第一导电型场缓冲层低的载流子浓度。

    Structure of gas sensor
    113.
    发明授权
    Structure of gas sensor 有权
    气体传感器结构

    公开(公告)号:US06222372B1

    公开(公告)日:2001-04-24

    申请号:US09196693

    申请日:1998-11-20

    IPC分类号: G01N2762

    CPC分类号: G01N27/407

    摘要: A gas sensor measuring a given component content in a gas is provided which has an outer and an inner metallic cover, a sensing unit, and an insulator. The sensing unit consists of a measuring electrode to be exposed to the gas to be measured and a reference electrode to be exposed to a reference gas in a reference gas chamber. The measuring electrode and the reference electrode are disposed adjacent each other through a solid electrolyte body. The inner metallic cover is installed on an end of a sensor housing. The outer metallic cover is installed on the periphery of the inner metallic cover. The insulator is mounted within the inner metallic cover and has formed therein holes through which sensor signal pickup leads pass. The insulator has an outer wall different in geometry from an inner wall of the inner metallic cover to define a portion of a reference gas passage therebetween which leads to the reference gas chamber.

    摘要翻译: 提供了测量气体中给定组分含量的气体传感器,其具有外金属外壳和内金属盖,感测单元和绝缘体。 感测单元由暴露于被测气体的测量电极和参考气体暴露于参考气体中的参考气体组成。 测量电极和参考电极通过固体电解质体彼此相邻设置。 内金属盖安装在传感器外壳的一端。 外金属盖安装在内金属盖的周边。 绝缘体安装在内金属盖内,并且在其中形成有传感器信号拾取引线通过的孔。 绝缘体具有几何形状与内金属盖的内壁不同的外壁,以在其间限定通向参考气室的参考气体通道的一部分。

    Oxygen concentration sensor
    114.
    发明授权
    Oxygen concentration sensor 失效
    氧浓度传感器

    公开(公告)号:US5688390A

    公开(公告)日:1997-11-18

    申请号:US584464

    申请日:1996-01-11

    IPC分类号: G01N27/409 G01N27/407

    摘要: A laminated type oxygen concentration sensor includes a laminated type oxygen concentration sensor element having a plate shape with a flange on a side surface thereof, and a housing in a tubular shape having an inclination seat inclined in a central axial direction thereof. The housing supports the laminated type oxygen concentration sensor element by contacting the inclination seat with the flange of the laminated type oxygen concentration sensor element at an outer circumference of the inclination seat. Since the sensor element is supported by contacting the flange with the inclination seat of the housing at the outer circumference of the inclination seat, the pressure per unit area imposed on the sensor element is minimized and cracking of the sensor element is prevented.

    摘要翻译: 叠层型氧浓度传感器包括具有在其侧表面上具有凸缘的板形的层叠型氧浓度传感器元件和具有在其中心轴线方向上倾斜的倾斜座的管状形状的壳体。 壳体通过使倾斜座与层叠型氧浓度传感器元件的凸缘在倾斜座的外周接触来支撑层叠型氧浓度传感器元件。 由于传感器元件通过使凸缘与倾斜座的外周处的壳体的倾斜座接触来支撑,所以施加在传感器元件上的每单位面积的压力被最小化并且防止了传感器元件的破裂。

    Superlattice avalanche photodiode with mesa structure
    115.
    发明授权
    Superlattice avalanche photodiode with mesa structure 失效
    超晶格雪崩光电二极管与台面结构

    公开(公告)号:US5654578A

    公开(公告)日:1997-08-05

    申请号:US576649

    申请日:1995-12-21

    申请人: Isao Watanabe

    发明人: Isao Watanabe

    摘要: A superlattice avalanche photodiode with a mesa structure is provided, which enables to keep its noise characteristic low for a long time without decreasing the dynamic range for high-speed response. The photodiode has a semiconductor superlattice carrier multiplication layer, a first semiconductor electric-field buffer layers of a first conductivity type formed on one side of the carrier multiplication layer, and a second semiconductor electric-field buffer layer of a second conductivity type formed on the other side of the carrier multiplication layer. The photodiode further has a semiconductor light-absorbing layer of the second conductivity type formed on the second electric-field buffer layer. At least the light-absorbing layer constitutes the mesa structure. The first electric-field buffer layer is made of a central part and a peripheral part surrounding the central part. The peripheral part has a greater electric-field relaxation effect than that of the central part. The interface damage of the light-absorbing layer is restrained through the difference of the electric-field relaxation effect.

    摘要翻译: 提供了具有台面结构的超晶格雪崩光电二极管,其能够长时间保持其噪声特性低而不降低高速响应的动态范围。 光电二极管具有半导体超晶格载体倍增层,形成在载流子倍增层一侧的第一导电类型的第一半导体电场缓冲层和形成在第二导电类型的第二导电类型的第二半导体电场缓冲层 载波倍增层的另一侧。 光电二极管还具有形成在第二电场缓冲层上的第二导电类型的半导体光吸收层。 至少光吸收层构成台面结构。 第一电场缓冲层由围绕中心部分的中心部分和周边部分制成。 周边部分具有比中心部分更大的电场松弛效应。 通过电场松弛效应的差异来抑制光吸收层的界面损伤。

    Oxygen concentration sensor
    116.
    发明授权
    Oxygen concentration sensor 失效
    氧浓度传感器

    公开(公告)号:US5627306A

    公开(公告)日:1997-05-06

    申请号:US605917

    申请日:1996-02-23

    CPC分类号: G01N27/4071

    摘要: In an oxygen gas sensor having a variable electrical characteristic dependent upon ambient oxygen concentration, a ceramic holding member having a hole for holding a plate sensor sensor element is disposed in a housing with the element inserted into the housing. During sensor assembly, powder is filled under pressure in the housing between a pressurized member and the ceramic holding member. The ceramic holding member has an inclined surface descending directly from an upper opening end of the holding hole to form an obtuse angle between the sensor element and the inclined surface, so that the powder can flow on the inclined surface smoothly during the powder filling and powder compressing operations. By taking this construction it is possible to provide an oxygen concentration sensor with no cracking of the element and easy mounting of the sensor element to the housing.

    摘要翻译: 在具有取决于环境氧浓度的可变电特性的氧气传感器中,具有用于保持板传感器传感器元件的孔的陶瓷保持构件设置在壳体中,元件插入壳体中。 在传感器组件期间,在加压构件和陶瓷保持构件之间的壳体中的压力下填充粉末。 陶瓷保持构件具有从保持孔的上开口端直接下降的倾斜表面,以在传感器元件和倾斜表面之间形成钝角,使得粉末可以在粉末填充和粉末期间平滑地流动在倾斜表面上 压缩操作。 通过采用这种结构,可以提供一种氧浓度传感器,而不会使元件发生破裂,并且容易将传感器元件安装到壳体上。

    Superlattice avalance photodiode
    118.
    发明授权
    Superlattice avalance photodiode 失效
    超晶格雪崩光电二极管。

    公开(公告)号:US5552629A

    公开(公告)日:1996-09-03

    申请号:US408903

    申请日:1995-03-22

    申请人: Isao Watanabe

    发明人: Isao Watanabe

    摘要: A semiconductor device according to the invention includes an electric field buffer layer, a superlattice multiplication layer and a cap layer, which are laminated. Around a mesa side surface, a round shape p.sup.+ dopant to a depth below the field buffer layer, and then the cap layer is etched so that the p.sup.+ region is not in contact with the cap layer. This creates a distance of several .mu.m in-between the inner surface of the p.sup.+ region and the external surface of the cap layer.

    摘要翻译: 根据本发明的半导体器件包括层叠的电场缓冲层,超晶格倍增层和覆盖层。 围绕台面侧表面,圆形p +掺杂剂到场缓冲层下方的深度,然后蚀刻帽层,使得p +区域不与盖层接触。 这在p +区域的内表面和盖层的外表面之间产生几微米的距离。

    Vibration damping devices
    119.
    发明授权
    Vibration damping devices 失效
    振动阻尼装置

    公开(公告)号:US5477946A

    公开(公告)日:1995-12-26

    申请号:US302446

    申请日:1994-09-12

    摘要: A vibration damping device comprises two cylindrical and flexible membrane members liquid-tightly connected at its end portion to respective end portion of a piston member and at its other end portions to respective face plates, a connecting member connecting the face plates to each other to form a closed chamber, a liquid filled in the closed chamber, and fastening members arranged onto the piston member and face plate, respectively. Moreover, at least one restricted passage is formed in the piston member or the connecting member. When an electrorheological fluid is used as a liquid, electrodes are arranged on opposed walls of the restricted passage.

    摘要翻译: 减振装置包括两个圆柱形和柔性的薄膜构件,其两端在其端部与活塞构件的相应端部液密地连接,并在其另一端部分分别连接到相应的面板,连接构件将面板彼此连接以形成 封闭室,填充在封闭室中的液体以及分别布置在活塞构件和面板上的紧固构件。 此外,在活塞构件或连接构件中形成至少一个限制通道。 当电流变流体用作液体时,电极被布置在限制通道的相对的壁上。

    Vibration damping device
    120.
    发明授权
    Vibration damping device 失效
    减震装置

    公开(公告)号:US5366048A

    公开(公告)日:1994-11-22

    申请号:US226365

    申请日:1994-04-12

    摘要: A vibration damping device comprises two cylindrical and flexible membrane members, a restricted passage constituting member connected at both end portions to these membrane members, two face plates connected at their end portion to the membrane members, a closed chamber defined by these members and face plates, a rigid member connecting both the face plates to each other at inside or outside of the closed chamber, a fluid filled in the closed chamber, and a fastening member disposed at each side of the restricted passage constituting member and the face plate.

    摘要翻译: 减振装置包括两个圆柱形和柔性膜构件,在两个端部连接到这些膜构件的限制通道构成构件,在其端部连接到膜构件的两个面板,由这些构件和面板限定的封闭腔 ,在封闭室的内部或外部将两个面板彼此连接的刚性构件,填充在封闭室中的流体和设置在限制通道构成构件和面板的每一侧的紧固构件。