摘要:
A process for producing a MC-type conductive filler includes treating minute metallic particles with a coupling agent, preparing an oil phase of the coupling agent-treated minute metallic particles and a reactive substance A, the reactive substance A directly contacting the metallic particles. Then, an aqueous phase is prepared having a reactive substance B, which is capable of reacting with the reactive substance A, dissolved in water. Thereafter, the oil phase is dispersed in the aqueous phase to form a suspension. In situ reaction of the reactive substances A and B is then caused by applying heat to the suspension or adding a catalyst to the suspension. This forms a coating of a thermosetting insulating resin on the surface of the minute metallic particles. Alternatively, the reactive substance B may not be used. A MC-type conductive filler may also be made by immersing minute metallic particles in an affinity agent, immersing and dispersing the affinity agent treated-particles in an epoxy monomer and polymerizing the monomer to form an insulating polymer on the surface of the minute metallic particles.
摘要:
With the object of providing a high-speed high-sensitivity planar-type avalanche photodiode (APD) that has high reliability, great manufacturing tolerance and a wide dynamic range, there is presented a planar-type avalanche photodiode, having on a semiconductor substrate a layered structure comprising specific 6 layers, a specific conductive-type acquired region in a peripheral section of a photo-sensitive region and a specific ring-shaped isolation trench region in said photo-sensitive region, wherein a ring-shaped region of the second conductive-type semiconductor cap layer that is inscribed in said ring-shaped isolation trench and located in the periphery of the photo-sensitive region is formed thin to have a thickness equal to or less than the thickness of said semiconductor multiplication layer, and the first conductive-type semiconductor field buffer layer located directly under the ring-shaped cap region, together with a peripheral region in the field buffer layer, is formed to have a lower carrier concentration than the first conductive-type field buffer layer in said photo-sensitive region.
摘要:
A gas sensor measuring a given component content in a gas is provided which has an outer and an inner metallic cover, a sensing unit, and an insulator. The sensing unit consists of a measuring electrode to be exposed to the gas to be measured and a reference electrode to be exposed to a reference gas in a reference gas chamber. The measuring electrode and the reference electrode are disposed adjacent each other through a solid electrolyte body. The inner metallic cover is installed on an end of a sensor housing. The outer metallic cover is installed on the periphery of the inner metallic cover. The insulator is mounted within the inner metallic cover and has formed therein holes through which sensor signal pickup leads pass. The insulator has an outer wall different in geometry from an inner wall of the inner metallic cover to define a portion of a reference gas passage therebetween which leads to the reference gas chamber.
摘要:
A laminated type oxygen concentration sensor includes a laminated type oxygen concentration sensor element having a plate shape with a flange on a side surface thereof, and a housing in a tubular shape having an inclination seat inclined in a central axial direction thereof. The housing supports the laminated type oxygen concentration sensor element by contacting the inclination seat with the flange of the laminated type oxygen concentration sensor element at an outer circumference of the inclination seat. Since the sensor element is supported by contacting the flange with the inclination seat of the housing at the outer circumference of the inclination seat, the pressure per unit area imposed on the sensor element is minimized and cracking of the sensor element is prevented.
摘要:
A superlattice avalanche photodiode with a mesa structure is provided, which enables to keep its noise characteristic low for a long time without decreasing the dynamic range for high-speed response. The photodiode has a semiconductor superlattice carrier multiplication layer, a first semiconductor electric-field buffer layers of a first conductivity type formed on one side of the carrier multiplication layer, and a second semiconductor electric-field buffer layer of a second conductivity type formed on the other side of the carrier multiplication layer. The photodiode further has a semiconductor light-absorbing layer of the second conductivity type formed on the second electric-field buffer layer. At least the light-absorbing layer constitutes the mesa structure. The first electric-field buffer layer is made of a central part and a peripheral part surrounding the central part. The peripheral part has a greater electric-field relaxation effect than that of the central part. The interface damage of the light-absorbing layer is restrained through the difference of the electric-field relaxation effect.
摘要:
In an oxygen gas sensor having a variable electrical characteristic dependent upon ambient oxygen concentration, a ceramic holding member having a hole for holding a plate sensor sensor element is disposed in a housing with the element inserted into the housing. During sensor assembly, powder is filled under pressure in the housing between a pressurized member and the ceramic holding member. The ceramic holding member has an inclined surface descending directly from an upper opening end of the holding hole to form an obtuse angle between the sensor element and the inclined surface, so that the powder can flow on the inclined surface smoothly during the powder filling and powder compressing operations. By taking this construction it is possible to provide an oxygen concentration sensor with no cracking of the element and easy mounting of the sensor element to the housing.
摘要:
In accordance with the present invention, there is provided a soldering process comprising the steps of: providing in a furnace first and second heaters each adapted to emit infrared energy; setting a printed circuit board, which has a solder paste and an electronic component thereon, in the furnace; heating the printed circuit board with the first heater; and heating the electronic component with the second heater;wherein the first and second heaters have different radiation spectra such that infrared energy irradiated by the first heater is more absorbed by the printed circuit board and less absorbed by the electronic component than that irradiated by the second heater. The present invention also provides a soldering apparatus for use in such soldering process.
摘要:
A semiconductor device according to the invention includes an electric field buffer layer, a superlattice multiplication layer and a cap layer, which are laminated. Around a mesa side surface, a round shape p.sup.+ dopant to a depth below the field buffer layer, and then the cap layer is etched so that the p.sup.+ region is not in contact with the cap layer. This creates a distance of several .mu.m in-between the inner surface of the p.sup.+ region and the external surface of the cap layer.
摘要:
A vibration damping device comprises two cylindrical and flexible membrane members liquid-tightly connected at its end portion to respective end portion of a piston member and at its other end portions to respective face plates, a connecting member connecting the face plates to each other to form a closed chamber, a liquid filled in the closed chamber, and fastening members arranged onto the piston member and face plate, respectively. Moreover, at least one restricted passage is formed in the piston member or the connecting member. When an electrorheological fluid is used as a liquid, electrodes are arranged on opposed walls of the restricted passage.
摘要:
A vibration damping device comprises two cylindrical and flexible membrane members, a restricted passage constituting member connected at both end portions to these membrane members, two face plates connected at their end portion to the membrane members, a closed chamber defined by these members and face plates, a rigid member connecting both the face plates to each other at inside or outside of the closed chamber, a fluid filled in the closed chamber, and a fastening member disposed at each side of the restricted passage constituting member and the face plate.