Abstract:
An apparatus for processing substrates according to a predetermined photolithography process is presented. The apparatus includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station. The monitoring station comprises an optical monitoring system comprising a spectrophotometric channel, and is accommodated in a sealed enclosure, such that incident light passes through the optical system towards the substrate through a transparent window.
Abstract:
The present invention relates to an integrated apparatus for monitoring wafers and for process control in the semiconductor manufacturing process, by means of optical measurements at more than one spectral range that can be installed inside any part of the semiconductor production line, i.e., inside the photocluster equipment, the CVD equipment or the CMP equipment. The apparatus comprises a measuring unit (110) for performing optical measurements in predetermined sites on said wafer, illumination sources for illuminating said wafer via measuring unit (10,50), supporting means (30) for holding, rotating and translating the wafer and a control unit (120). The measuring unit (110) comprises: (a) at least two separate optical units, each operating at a different distinct spectral range; (b) a separate optical window for each optical unit (31, 32); (c) at least one movable optical head (34); (d) mechanical means for translating said optical head relatively to the wafer's surface.
Abstract:
A monitoring tool for monitoring an article in a wet environment, the monitoring tool including a monitoring station having an optical unit, a liquid holding unit for receiving the article, and a window, through which at least a portion of the article is viewable by the optical unit, a buffer station associated with the monitoring station having a plurality of supporting assemblies for receiving the article before and after being monitored, wherein at least one of the supporting assemblies includes a liquid receptacle for holding the article therein, and a gripping unit operating in conjunction with the monitoring station for moving the article from the buffer station to the liquid holding unit of the monitoring station.
Abstract:
A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of an incident radiation. An optical model, based on at least some of the features of the structure is provided. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure. A measurement area, which is substantially larger than a surface area of the structure defined by the grid cycle, is illuminated by an incident radiation of a preset substantially wide wavelength range. Light component substantially specularly reflected from the measurement area is detected and measured data representative of photometric intensities of each wavelength within the wavelength range is obtained. The measured and theoretical data are analyzed and the optical model is optimized until the theoretical data satisfies a predetermined condition. Upon detecting that the predetermined condition is satisfied, said at least one parameter of the structure is calculated.
Abstract:
A semiconductor production tool which provides alignment of a wafer at a fab station thereof includes an optical system, a wafer translation mechanism, a field of view translation unit and a unit for determining alignment. The optical system has a field of view which views the wafer. The wafer translation mechanism at least brings the wafer to a predetermined measurement location. In the present invention, the field of view translation unit translates the field of view relative to the wafer so as to view at least a portion of an edge of the wafer during an alignment operation. The unit for determining alignment is operative during the alignment operation and determines the alignment of the wafer from images produced by the optical system when the optical system views at least a portion of the marker.
Abstract:
A thin film thickness measuring device is disclosed. The device includes an illuminator, a receiver and a beam deflector. The illuminator provides a collimated input light beam along an input axis. The receiver includes a lens and a diaphragm having a pinhole located at a focal point of the lens and receives a collimated output light beam along an output axis parallel to the input axis. The beam deflector is translatable at least along a scanning axis parallel to the input axis. The beam deflector directs the input light beam towards a sample and the output light beam from the sample towards the receiver.