Monitoring apparatus and method particularly useful in photolithographically processing substrates
    111.
    发明授权
    Monitoring apparatus and method particularly useful in photolithographically processing substrates 有权
    监控设备和方法特别适用于光刻处理基板

    公开(公告)号:US06603529B1

    公开(公告)日:2003-08-05

    申请号:US09710878

    申请日:2000-11-14

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    Abstract: An apparatus for processing substrates according to a predetermined photolithography process is presented. The apparatus includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station. The monitoring station comprises an optical monitoring system comprising a spectrophotometric channel, and is accommodated in a sealed enclosure, such that incident light passes through the optical system towards the substrate through a transparent window.

    Abstract translation: 提出了一种根据预定的光刻工艺处理衬底的设备。 该装置包括装载基板的装载站,其中基板涂覆有光致抗蚀剂材料的涂布站,其中通过具有预定图案的掩模将光致抗蚀剂涂层暴露于光以产生潜在的曝光站 在光致抗蚀剂涂层上的掩模图像,潜像显影的显影站,卸载基板的卸载站和用于在到达卸载之前相对于所述光刻工艺的预定参数监测基板的监控站 站。 监测站包括一个包含分光光度通道的光学监测系统,并且被容纳在密封的外壳中,使得入射光通过透明窗通过光学系统朝向衬底。

    Apparatus for integrated monitoring of wafers and for process control in the semiconductor manufacturing and a method for use thereof
    112.
    发明授权
    Apparatus for integrated monitoring of wafers and for process control in the semiconductor manufacturing and a method for use thereof 失效
    用于半导体制造中的晶片的集成监视和过程控制的装置及其使用方法

    公开(公告)号:US06426502B1

    公开(公告)日:2002-07-30

    申请号:US09509080

    申请日:2000-05-22

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: H01L21/67253 H01L21/681

    Abstract: The present invention relates to an integrated apparatus for monitoring wafers and for process control in the semiconductor manufacturing process, by means of optical measurements at more than one spectral range that can be installed inside any part of the semiconductor production line, i.e., inside the photocluster equipment, the CVD equipment or the CMP equipment. The apparatus comprises a measuring unit (110) for performing optical measurements in predetermined sites on said wafer, illumination sources for illuminating said wafer via measuring unit (10,50), supporting means (30) for holding, rotating and translating the wafer and a control unit (120). The measuring unit (110) comprises: (a) at least two separate optical units, each operating at a different distinct spectral range; (b) a separate optical window for each optical unit (31, 32); (c) at least one movable optical head (34); (d) mechanical means for translating said optical head relatively to the wafer's surface.

    Abstract translation: 本发明涉及一种用于在半导体制造过程中监视晶片和用于过程控制的集成设备,其通过在多于一个光谱范围的光学测量可以安装在半导体生产线的任何部分内,即在光簇内 设备,CVD设备或CMP设备。 该装置包括用于在所述晶片上的预定位置进行光学测量的测量单元(110),用于经由测量单元(10,50)照射所述晶片的照明源,用于保持,旋转和平移晶片的支撑装置(30) 控制单元(120)。 测量单元(110)包括:(a)至少两个单独的光学单元,每个光学单元在不同的不同光谱范围下工作; (b)用于每个光学单元(31,32)的单独的光学窗口; (c)至少一个可移动光学头(34); (d)用于相对于晶片表面平移所述光学头的机械装置。

    Apparatus for optical inspection of wafers during polishing
    113.
    发明授权
    Apparatus for optical inspection of wafers during polishing 有权
    抛光期间晶片光学检查的装置

    公开(公告)号:US06368182B2

    公开(公告)日:2002-04-09

    申请号:US09876948

    申请日:2001-06-11

    CPC classification number: B24B37/345 B24B49/12 H01L21/67253 H01L21/6838

    Abstract: A monitoring tool for monitoring an article in a wet environment, the monitoring tool including a monitoring station having an optical unit, a liquid holding unit for receiving the article, and a window, through which at least a portion of the article is viewable by the optical unit, a buffer station associated with the monitoring station having a plurality of supporting assemblies for receiving the article before and after being monitored, wherein at least one of the supporting assemblies includes a liquid receptacle for holding the article therein, and a gripping unit operating in conjunction with the monitoring station for moving the article from the buffer station to the liquid holding unit of the monitoring station.

    Abstract translation: 一种用于在湿润环境中监测物品的监测工具,所述监测工具包括具有光学单元的监测站,用于接收所述物品的液体保持单元和窗口,通过所述窗口可以观察所述物品的至少一部分 光学单元,与监测站相关联的缓冲站具有多个用于在被监视之前和之后接收物品的支撑组件,其中至少一个支撑组件包括用于将物品保持在其中的液体容器,以及操作 结合用于将物品从缓冲站移动到监测站的液体保持单元的监测站。

    Method and apparatus for measurements of patterned structures
    114.
    发明授权
    Method and apparatus for measurements of patterned structures 有权
    用于测量图案结构的方法和装置

    公开(公告)号:US6100985A

    公开(公告)日:2000-08-08

    申请号:US267989

    申请日:1999-03-12

    CPC classification number: G01B11/0625 G01B11/02 G01J3/42 H01L22/12

    Abstract: A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of an incident radiation. An optical model, based on at least some of the features of the structure is provided. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure. A measurement area, which is substantially larger than a surface area of the structure defined by the grid cycle, is illuminated by an incident radiation of a preset substantially wide wavelength range. Light component substantially specularly reflected from the measurement area is detected and measured data representative of photometric intensities of each wavelength within the wavelength range is obtained. The measured and theoretical data are analyzed and the optical model is optimized until the theoretical data satisfies a predetermined condition. Upon detecting that the predetermined condition is satisfied, said at least one parameter of the structure is calculated.

    Abstract translation: 一种用于测量具有由其制造的特定过程限定的多个特征的图案化结构的至少一个期望参数的方法。 该结构表示具有至少一个周期的网格,该至少一个周期由相对于入射辐射具有不同光学特性的至少两个局部相邻元件形成。 提供了基于结构的至少一些特征的光学模型。 该模型能够确定表示从结构镜面反射的不同波长的光分量的光度强度并且计算所述结构的至少一个期望参数的理论数据。 基本上大于由栅格周期限定的结构的表面积的测量区域被预设的基本上宽的波长范围的入射辐射照射。 检测从测量区域基本上镜面反射的光分量,并且获得表示波长范围内的每个波长的光度强度的测量数据。 分析测量和理论数据,并优化光学模型,直到理论数据满足预定条件。 在检测到满足预定条件时,计算结构的所述至少一个参数。

    Method and apparatus for alignment of a wafer
    115.
    发明授权
    Method and apparatus for alignment of a wafer 失效
    用于对准晶片的方法和装置

    公开(公告)号:US6038029A

    公开(公告)日:2000-03-14

    申请号:US97298

    申请日:1998-06-12

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: G03F9/70 G01B11/00

    Abstract: A semiconductor production tool which provides alignment of a wafer at a fab station thereof includes an optical system, a wafer translation mechanism, a field of view translation unit and a unit for determining alignment. The optical system has a field of view which views the wafer. The wafer translation mechanism at least brings the wafer to a predetermined measurement location. In the present invention, the field of view translation unit translates the field of view relative to the wafer so as to view at least a portion of an edge of the wafer during an alignment operation. The unit for determining alignment is operative during the alignment operation and determines the alignment of the wafer from images produced by the optical system when the optical system views at least a portion of the marker.

    Abstract translation: 提供在晶圆厂的晶片对准的半导体制造工具包括光学系统,晶片平移机构,视场转换单元和用于确定对准的单元。 光学系统具有观察晶片的视场。 晶片平移机构至少将晶片带到预定的测量位置。 在本发明中,视场转换单元相对于晶片转换视野,以便在对准操作期间观察晶片的边缘的至少一部分。 用于确定对准的单元在对准操作期间操作,并且当光学系统观察标记的至少一部分时,确定晶片与由光学系统产生的图像的对准。

    Device for measuring the thickness of thin films
    116.
    发明授权
    Device for measuring the thickness of thin films 失效
    用于测量薄膜厚度的装置

    公开(公告)号:US5517312A

    公开(公告)日:1996-05-14

    申请号:US221724

    申请日:1994-04-01

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: G01B11/065

    Abstract: A thin film thickness measuring device is disclosed. The device includes an illuminator, a receiver and a beam deflector. The illuminator provides a collimated input light beam along an input axis. The receiver includes a lens and a diaphragm having a pinhole located at a focal point of the lens and receives a collimated output light beam along an output axis parallel to the input axis. The beam deflector is translatable at least along a scanning axis parallel to the input axis. The beam deflector directs the input light beam towards a sample and the output light beam from the sample towards the receiver.

    Abstract translation: 公开了一种薄膜厚度测量装置。 该装置包括照明器,接收器和光束偏转器。 照明器沿输入轴提供准直的输入光束。 接收器包括透镜和具有位于透镜的焦点处的针孔的光阑,并且沿着平行于输入轴的输出轴接收准直的输出光束。 至少沿平行于输入轴的扫描轴平移光束偏转器。 光束偏转器将输入光束引向样本,并将输出光束从样本引导到接收器。

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