公开(公告)号：US08766250B2

公开(公告)日：2014-07-01

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US08592251B2

公开(公告)日：2013-11-26

申请号：US13467408

申请日：2012-05-09

申请人： Miyuki Hosoba ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Miyuki Hosoba ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  G02F1/133528 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2001/133302 ,  G02F2001/133531 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/08 ,  H01L21/02107 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02672 ,  H01L21/324 ,  H01L21/477 ,  H01L21/67115 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.

摘要翻译： 目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。 在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在 氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。 因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。 制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。

公开(公告)号：US08557641B2

公开(公告)日：2013-10-15

申请号：US12826000

申请日：2010-06-29

申请人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L29/10 ,  H01L29/12

CPC分类号： H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

摘要翻译： 目的是提供一种包括具有稳定电特性的薄膜晶体管的高可靠性半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（其用于脱水或脱氢），以提高纯度 氧化物半导体膜，并且减少诸如水分的杂质。 除了存在于氧化物半导体膜中的水分等杂质外，热处理会导致存在于栅极绝缘层中的杂质，氧化物半导体膜和氧化物半导体膜之间的氧化物半导体膜与膜之间的界面中的杂质的减少， 与氧化物半导体膜接触。

公开(公告)号：US08530892B2

公开(公告)日：2013-09-10

申请号：US12917569

申请日：2010-11-02

申请人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC分类号： H01L29/10 ,  H01L21/16

CPC分类号： H01L29/45 ,  G02F1/1368 ,  H01L29/7869

摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

摘要翻译： 在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。 源极和漏极层具有两层或多层的层叠结构，其中使用其功函数低于氧化物半导体层的功函数的金属的氧化物形成与氧化物半导体层接触的层 或含有这种金属的合金的氧化物。 使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为 组分，包含任何这些元素组合的合金等。

公开(公告)号：US08518740B2

公开(公告)日：2013-08-27

申请号：US12828468

申请日：2010-07-01

申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/7869 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/1225

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, impurities such as moisture existing in the gate insulating layer are reduced before formation of the oxide semiconductor film, and then heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. After that, slow cooling is performed in an oxygen atmosphere. Besides impurities such as moisture existing in the gate insulating layer and the oxide semiconductor film, impurities such as moisture existing at interfaces between the oxide semiconductor film and upper and lower films provided in contact therewith are reduced.

摘要翻译： 本发明的目的是提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在制造包括薄膜晶体管的半导体器件的方法中，其中氧化物半导体膜用于包括沟道形成区域的半导体层，在形成氧化物半导体膜之前，存在于栅极绝缘层中的诸如水分的杂质减少 ，然后进行热处理（脱水或脱氢的热处理），以提高氧化物半导体膜的纯度并减少诸如水分的杂质。 之后，在氧气氛中进行缓慢冷却。 除了存在于栅极绝缘层和氧化物半导体膜中的杂质等杂质以外，氧化物半导体膜与与其接触的上下膜之间的界面处存在的诸如水分的杂质减少。

公开(公告)号：US08502220B2

公开(公告)日：2013-08-06

申请号：US12848406

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/36

CPC分类号： H01L27/1225 ,  H01L21/385 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层，每个源电极层和漏极电极层的端部位于比半导体层的端部更靠内侧的形状。 在驱动电路部分的薄膜晶体管中，半导体层设置在栅电极层和导电层之间。 第一布线和第二布线通过氧化物导电层在设置在栅极绝缘层中的开口中电连接。

公开(公告)号：US08436350B2

公开(公告)日：2013-05-07

申请号：US12692794

申请日：2010-01-25

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hideyuki Kishida

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  G02F1/1362 ,  G02F2202/10 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225

摘要： In forming a thin film transistor, an oxide semiconductor layer is used and a cluster containing a titanium compound whose electrical conductance is higher than that of the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer.

摘要翻译： 在形成薄膜晶体管时，使用氧化物半导体层，并且在氧化物半导体层和栅极绝缘层之间形成含有电导率高于氧化物半导体层的导电性的钛化合物的簇。

公开(公告)号：US08395153B2

公开(公告)日：2013-03-12

申请号：US13596527

申请日：2012-08-28

申请人： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

发明人： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

公开(公告)号：US08395148B2

公开(公告)日：2013-03-12

申请号：US12612096

申请日：2009-11-04

申请人： Shunpei Yamazaki ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Junichiro Sakata

IPC分类号： H01L29/12

CPC分类号： H01L29/78669 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.

公开(公告)号：US08389989B2

公开(公告)日：2013-03-05

申请号：US12869278

申请日：2010-08-26

申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Masashi Tsubuku

发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Masashi Tsubuku

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

摘要： It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

摘要翻译： 本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。 在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层， 使用金属材料形成。 因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。