公开(公告)号：US20130081301A1

公开(公告)日：2013-04-04

申请号：US13200789

申请日：2011-09-30

Applicant: Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

IPC: F26B3/00 ,  F26B21/14

CPC classification number: H01L21/67028 ,  H01L21/02057 ,  H01L21/67034 ,  H01L27/11521 ,  H01L29/66825

Abstract: A method of removing a water-comprising rinse/cleaning material from the surface of a device which includes high aspect ratio features (an aspect ratio of 5 or greater) where sidewalls of the feature are separated by 50 nm or less without causing stiction between the feature sidewall surfaces. The method relies on the use of a low surface tension drying liquid which also exhibits a high evaporation rate. The method also relies on a technique by which the drying liquid is applied. Increasing the evaporation rate of the drying liquid and application of the drying liquid in the form of a vapor helps to eliminate stiction.

Abstract translation: 一种从装置的表面去除含水冲洗/清洁材料的方法，该方法包括高特征比（特征5或更大）的高纵横比特征（长宽比为5或更大），其中该特征的侧壁被隔开50nm或更小，而不会导致 特征侧壁表面。 该方法依赖于也表现出高蒸发速率的低表面张力干燥液体的使用。 该方法还依赖于施加干燥液的技术。 增加干燥液体的蒸发速率和以蒸汽形式施加干燥液体有助于消除粘性。

公开(公告)号：US20120196155A1

公开(公告)日：2012-08-02

申请号：US13193539

申请日：2011-07-28

Applicant: Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

Inventor： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

IPC: G11B5/64 ,  C23C16/50 ,  C23C16/04 ,  B05D5/00 ,  B82Y10/00

CPC classification number: G11B5/85 ,  G11B5/743 ,  G11B5/855

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

Abstract translation: 提供了一种形成磁性介质基板的方法和装置。 在具有磁敏感层的基板上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。 对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。 然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

公开(公告)号：US20110143170A1

公开(公告)日：2011-06-16

申请号：US12965318

申请日：2010-12-10

Applicant: Roman Gouk ,  Steven Verhaverbeke ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene

Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene

IPC: G11B5/62 ,  G11B5/84

CPC classification number: G11B5/855 ,  G11B5/8404 ,  G11B5/851

Abstract: A method and apparatus for planarizing magnetically susceptible layers of substrates is provided. A patterned resist is formed on the magnetically susceptible layer, and the substrate is subjected to a plasma immersion ion implantation process to change a magnetic property of the magnetically susceptible layer according to the pattern of the resist material. The substrate is subjected to a plasma material removal process either before or after the implantation process to planarize the surface of the magnetically susceptible layer resulting from the implantation process. The plasma material removal process may be directional or non-directional.

Abstract translation: 提供了一种用于平坦化磁敏感层的基板的方法和装置。 在磁敏层上形成图案化的抗蚀剂，并且对基片进行等离子体浸没离子注入工艺，以根据抗蚀剂材料的图案改变磁敏层的磁特性。 在注入工艺之前或之后对衬底进行等离子体材料去除处理，以平坦化由植入工艺产生的易磁化层的表面。 等离子体材料去除过程可以是有向的或非定向的。

公开(公告)号：US20110011828A1

公开(公告)日：2011-01-20

申请号：US12505901

申请日：2009-07-20

Applicant: Roman Gouk ,  Steven Verhaverbeke

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: C23F1/02 ,  C23C14/34

CPC classification number: C23C14/086 ,  C23C14/5806 ,  C23C14/5873 ,  H01L31/1884 ,  Y02E10/50

Abstract: Embodiments disclosed herein generally relate to a process of texturing a transparent conductive oxide layer deposited over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. After the transparent conductive oxide layer is deposited, the layer is textured to increase the haze of the layer. An increase in haze permits the layer to increase light trapping and thus improve the efficiency of a solar cell. A wet etch chemistry that utilizes a component that is less polar than water permits the acidic component, such as nitric acid, to dissociate less and thus etch the transparent conductive oxide to the desired texture. A suitable component is an organic component such as acetic acid which has a dielectric constant substantially below the dielectric constant of water.

Abstract translation: 本文公开的实施方案通常涉及纹理化沉积在衬底上的透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 在沉积透明导电氧化物层之后，该层被纹理化以增加该层的雾度。 雾度的增加允许层增加光捕获，从而提高太阳能电池的效率。 使用比水极性小的组分的湿蚀刻化学物质允许酸性组分（例如硝酸）较少分离，因此将透明导电氧化物蚀刻成所需的质地。 合适的组分是诸如乙酸的有机组分，其具有基本上低于水的介电常数的介电常数。

公开(公告)号：US20100221583A1

公开(公告)日：2010-09-02

申请号：US12703897

申请日：2010-02-11

Applicant: Majeed A. Foad ,  Jacob Newman ,  Jose Antonio Marin ,  Daniel Hoffman ,  Stephen Moffatt ,  Steven Verhaverbeke

Inventor： Majeed A. Foad ,  Jacob Newman ,  Jose Antonio Marin ,  Daniel Hoffman ,  Stephen Moffatt ,  Steven Verhaverbeke

IPC: G11B5/82 ,  C23C16/44 ,  C23C16/04

CPC classification number: G11B5/82 ,  C23C14/48 ,  C23C14/50 ,  C23C16/00 ,  C23F1/00 ,  G11B5/84 ,  G11B5/855 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687

Abstract: Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

Abstract translation: 提供了用于形成具有磁性图案化表面的基底的方法和设备。 在基板上形成包含一种或多种具有磁性的材料的磁性层。 对磁性层进行图案化处理，其中磁性层的表面的选定部分被改变，使得改变的部分与未改变的部分具有不同的磁性，而不改变衬底的形貌。 在图案化的磁性层上沉积保护层和润滑剂层。 图案化通过使衬底暴露于不同形式的能量的许多工艺来完成。 本文公开的装置和方法能够同时或顺序地翻转来处理衬底的两个主表面。 在一些实施例中，衬底表面的磁特性可以通过等离子体暴露均匀地改变，然后通过暴露于图案化能量选择性地恢复。

公开(公告)号：US07586235B2

公开(公告)日：2009-09-08

申请号：US11703893

申请日：2007-02-07

Applicant: Roman Gouk ,  Steven Verhaverbeke

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: H01L41/00

CPC classification number: H01L21/67057 ,  B06B1/0207 ,  B08B3/12 ,  H01L21/6704 ,  H01L21/67051 ,  H03H7/40

Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

Abstract translation: 一种用于匹配声波传感器负载和RF电源的阻抗幅度和阻抗相位的方法和装置。 声波传感器负载具有负载阻抗幅值和相位。 RF电源具有源阻抗幅值和相位。 在本发明的一个实施例中，变压器匹配源极和负载阻抗幅度。 与变压器串联连接的电容器将源阻抗相位与负载阻抗相位相匹配。

公开(公告)号：US20090205677A1

公开(公告)日：2009-08-20

申请号：US12423760

申请日：2009-04-14

Applicant: Randhir Thakur ,  Steven Verhaverbeke ,  J. Kelly Truman

Inventor： Randhir Thakur ,  Steven Verhaverbeke ,  J. Kelly Truman

IPC: B08B3/12

CPC classification number: H01L21/67051 ,  B08B3/024 ,  B08B3/12

Abstract: A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge.

Abstract translation: 一种单晶片清洁装置，其包括可容纳晶片的可旋转托架，具有第一表面张力的冲洗流体，具有低于第一表面张力的第二表面张力的第二流体，能够将冲洗流体施加到第一表面张力的第一喷嘴 位于所述晶片上的位于所述支架中的第一位置，所述第二喷嘴能够在所述晶片上的第二位置处施加所述第二流体，其中所述第二位置在所述第一位置的内侧，并且所述第一喷嘴和所述第二喷嘴能够跨越 晶片将第一位置和第二位置从晶片中心平移到晶片外边缘。

公开(公告)号：US20090201722A1

公开(公告)日：2009-08-13

申请号：US12355612

申请日：2009-01-16

Applicant: Kamesh Giridhar ,  Omkaram Nalamasu ,  Steven Verhaverbeke ,  Mahalingam Venkatesan

Inventor： Kamesh Giridhar ,  Omkaram Nalamasu ,  Steven Verhaverbeke ,  Mahalingam Venkatesan

IPC: G11C11/15 ,  G11B5/66 ,  H05B6/00

CPC classification number: G11B5/855 ,  G11C11/161 ,  H01L27/222

Abstract: A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. This process may be used to fabricate memory devices, including magnetoresistive random access memory devices.

Abstract translation: 一种用于在基板上的磁性薄膜中定义磁畴的方法，包括：用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂，其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体，其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域，使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括：保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置，其被配置为（1）装配在所述室内，（2）保持多个盘，将多个盘间隔开，其中，多个盘中的每一个的两侧暴露，以及（3） 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器，由此等离子体可以在腔室中点燃，并且盘在两侧均匀地暴露于等离子体离子。 该过程可用于制造包括磁阻随机存取存储器件的存储器件。

公开(公告)号：US07469883B2

公开(公告)日：2008-12-30

申请号：US11497025

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  Kelly Truman

Inventor： Steven Verhaverbeke ,  Kelly Truman

IPC: B01F3/04

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

Abstract: The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

Abstract translation: 本发明是一种新颖的清洁方法和用于单晶片清洗工艺的解决方案。 根据本发明，清洗液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2），水（H 2 O）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 而且本发明还有另一个实施方案，清洗溶液还包括溶解的气体如H 2。 在本发明的一个具体实施方案中，该溶液通过喷雾或分配在旋转晶片上而被使用。

公开(公告)号：US07451774B2

公开(公告)日：2008-11-18

申请号：US09891849

申请日：2001-06-25

Applicant: Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick R. Endo

Inventor： Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick R. Endo

IPC: B08B3/12

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

Abstract translation: 一种用于湿处理单个晶片的设备，包括： 用于保持晶片的装置; 用于向晶片的非器件侧提供声能的装置; 以及用于将流体流动到晶片的装置侧的装置。