公开(公告)号：US08530356B2

公开(公告)日：2013-09-10

申请号：US13317084

申请日：2011-10-07

申请人： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

发明人： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/31144

摘要： A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

摘要翻译： 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法，其中在施加该方法之后低k电介质材料的介电常数的变化小于约5％ 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量％HNO 3的硝酸蒸气。

公开(公告)号：US20130089987A1

公开(公告)日：2013-04-11

申请号：US13317084

申请日：2011-10-07

申请人： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

发明人： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

IPC分类号： H01L21/306

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/31144

摘要： A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

摘要翻译： 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法，其中在施加该方法之后低k电介质材料的介电常数的变化小于约5％ 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量％HNO 3的硝酸蒸气。

公开(公告)号：US20130081301A1

公开(公告)日：2013-04-04

申请号：US13200789

申请日：2011-09-30

申请人： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

发明人： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

IPC分类号： F26B3/00 ,  F26B21/14

CPC分类号： H01L21/67028 ,  H01L21/02057 ,  H01L21/67034 ,  H01L27/11521 ,  H01L29/66825

摘要： A method of removing a water-comprising rinse/cleaning material from the surface of a device which includes high aspect ratio features (an aspect ratio of 5 or greater) where sidewalls of the feature are separated by 50 nm or less without causing stiction between the feature sidewall surfaces. The method relies on the use of a low surface tension drying liquid which also exhibits a high evaporation rate. The method also relies on a technique by which the drying liquid is applied. Increasing the evaporation rate of the drying liquid and application of the drying liquid in the form of a vapor helps to eliminate stiction.

摘要翻译： 一种从装置的表面去除含水冲洗/清洁材料的方法，该方法包括高特征比（特征5或更大）的高纵横比特征（长宽比为5或更大），其中该特征的侧壁被隔开50nm或更小，而不会导致 特征侧壁表面。 该方法依赖于也表现出高蒸发速率的低表面张力干燥液体的使用。 该方法还依赖于施加干燥液的技术。 增加干燥液体的蒸发速率和以蒸汽形式施加干燥液体有助于消除粘性。

公开(公告)号：US20060042651A1

公开(公告)日：2006-03-02

申请号：US10931093

申请日：2004-08-30

申请人： Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James Papanu ,  Dennis Yost

发明人： Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James Papanu ,  Dennis Yost

IPC分类号： B08B3/12

CPC分类号： H01L21/02074 ,  B08B3/08 ,  B08B3/12 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/0209 ,  H01L21/67051 ,  H01L21/76808 ,  H01L21/76814

摘要： Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

摘要翻译： 描述了针对半导体制造中的特定衬底和结构的清洁溶液和清洁方法。 描述了一种使用表面张力小于水的溶剂形成的清洁溶液清洁尺寸小于0.15μm的脆弱结构的方法，同时向其上形成结构的基底施加声能。 此外，还描述了用几种不同的清洁溶液，特别是硫酸水溶液和HF清洗溶液清洗铜的方法。 此外，还描述了使用不同的清洁溶液同时清洁基板的两侧的方法，所述清洗溶液应用于顶部和底部。

公开(公告)号：US07718009B2

公开(公告)日：2010-05-18

申请号：US10931093

申请日：2004-08-30

申请人： Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian J. Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James S. Papanu ,  Dennis Yost

发明人： Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian J. Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James S. Papanu ,  Dennis Yost

IPC分类号： C23G1/02

CPC分类号： H01L21/02074 ,  B08B3/08 ,  B08B3/12 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/0209 ,  H01L21/67051 ,  H01L21/76808 ,  H01L21/76814

摘要： Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

摘要翻译： 描述了针对半导体制造中的特定衬底和结构的清洁溶液和清洁方法。 描述了一种使用表面张力小于水的溶剂形成的清洁溶液清洁尺寸小于0.15μm的脆弱结构的方法，同时向其上形成结构的基底施加声能。 此外，还描述了用几种不同的清洁溶液，特别是硫酸水溶液和HF清洗溶液清洗铜的方法。 此外，还描述了使用不同的清洁溶液同时清洁基板的两侧的方法，所述清洗溶液应用于顶部和底部。

公开(公告)号：US20120202357A1

公开(公告)日：2012-08-09

申请号：US13192041

申请日：2011-07-27

申请人： Tatsuya E. Sato ,  David Thompson ,  Jeffrey W. Anthis ,  Vladimir Zubkov ,  Steven Verhaverbeke ,  Roman Gouk ,  Maitreyee Mahajani ,  Patricia M. Liu ,  Malcolm J. Bevan

发明人： Tatsuya E. Sato ,  David Thompson ,  Jeffrey W. Anthis ,  Vladimir Zubkov ,  Steven Verhaverbeke ,  Roman Gouk ,  Maitreyee Mahajani ,  Patricia M. Liu ,  Malcolm J. Bevan

IPC分类号： H01L21/31 ,  B05D3/10

CPC分类号： H01L21/3105 ,  C23C16/0272 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02312

摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.

摘要翻译： 描述制备用于后续成膜工艺的基材的方法。 还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。 描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。 热氧化物表面在基板的温度下暴露于高于饱和蒸气压的水分压，以将基本上没有反应性表面终止的致密热氧化物转变成具有羟基表面终止的表面。 这可以在诸如氨的路易斯碱存在下进行。

公开(公告)号：US20100104953A1

公开(公告)日：2010-04-29

申请号：US12258271

申请日：2008-10-24

申请人： James S. Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

发明人： James S. Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

IPC分类号： G03F1/00

CPC分类号： G03F7/168 ,  G03F1/82 ,  G03F7/427

摘要： A H2O vapor based dry plasma process for pre-treating and strip-cleaning a reticle, a three layer gas distribution plate (GDP) assembly to control the heat load to the reticle during the plasma process, and a modified hole pattern for the GDP that further enhances stripping of resist from the edges of the reticle are disclosed.

摘要翻译： 基于H 2 O蒸汽的干法等离子体处理，用于预处理和剥离掩模版，三层气体分配板（GDP）组件，用于控制等离子体工艺期间对掩模版的热负荷，以及改进的孔模式用于GDP， 公开了进一步增强抗蚀剂从掩模版的边缘的剥离。

公开(公告)号：US08361835B2

公开(公告)日：2013-01-29

申请号：US12748790

申请日：2010-03-29

申请人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

发明人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： H01L21/00

CPC分类号： C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US08354035B2

公开(公告)日：2013-01-15

申请号：US12821400

申请日：2010-06-23

申请人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

发明人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC分类号： B44C1/22

CPC分类号： G11B5/84 ,  G03F7/427

摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

摘要翻译： 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US20120055534A1

公开(公告)日：2012-03-08

申请号：US13227433

申请日：2011-09-07

申请人： Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Robert Visser

发明人： Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Robert Visser

IPC分类号： H01L31/042 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/022466 ,  H01L31/0328 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： Embodiments of the invention are directed to photovoltaic cells comprising a substantially optically transparent buffer layer on a superstrate and a photoabsorber layer on the buffer layer. The buffer layer of detailed embodiments has a work function greater than or equal to about the work function of the photoabsorber layer. Additional embodiments of the invention are directed to photovoltaic modules comprises a plurality of photovoltaic cells and methods of making photovoltaic cells and photovoltaic modules.

摘要翻译： 本发明的实施方案涉及在缓冲层上包括在上层上的基本上光学透明的缓冲层和光吸收层的光伏电池。 详细实施例的缓冲层具有大于或等于光吸收层的功函数的功函数。 本发明的另外的实施例涉及光伏模块，其包括多个光伏电池和制造光伏电池和光伏模块的方法。