公开(公告)号：US5543334A

公开(公告)日：1996-08-06

申请号：US356419

申请日：1994-12-15

申请人： Ichiro Yoshii ,  Hiroyuki Kamijoh ,  Yoshio Ozawa ,  Kikuo Yamabe ,  Kazuhiko Hashimoto ,  Katsuya Okumura ,  Kaoru Hama

发明人： Ichiro Yoshii ,  Hiroyuki Kamijoh ,  Yoshio Ozawa ,  Kikuo Yamabe ,  Kazuhiko Hashimoto ,  Katsuya Okumura ,  Kaoru Hama

IPC分类号： H01L21/66

CPC分类号： H01L22/14 ,  H01L2924/0002

摘要： A method of screening a semiconductor device. A silicon wafer having gate electrodes formed on the gate oxide film is prepared. An insulating layer is deposited on the silicon wafer. Gate electrode portions of a group of transistors to be tested are exposed. A conductive layer is deposited on the silicon wafer having exposed gate electrodes. The conductive layer is patterned to be a wiring layer so that the gate electrodes of a group of the transistors can be electrically connected to each other. The chip area to be tested is irradiated with light having intensity enough to generate a required quantity of carriers in a depletion layer between a well and a substrate. A predetermined test voltage is applied between the wiring layer and the substrate of the silicon wafer during irradiation of the light to measure current flowing through the wiring layer and the gate oxide film. An abnormality of the gate oxide film can be detected on the basis of the measured current value. The screening method may be conducted before the completion of forming the gate electrodes. Further, gate electrode portions not to be used by a user may not be electrically connected to the gate electrode portions to be used.

摘要翻译： 一种半导体器件的屏蔽方法。 制备在栅氧化膜上形成栅电极的硅晶片。 绝缘层沉积在硅晶片上。 待测试的一组晶体管的栅电极部分露出。 在具有暴露的栅电极的硅晶片上沉积导电层。 导电层被图案化为布线层，使得一组晶体管的栅电极可以彼此电连接。 用足够强度的光照射要测试的芯片面积，以在阱和衬底之间的耗尽层中产生所需量的载流子。 在光照射期间，在布线层和硅晶片的基板之间施加预定的测试电压，以测量流过布线层和栅氧化膜的电流。 可以基于测量的电流值来检测栅氧化膜的异常。 筛选方法可以在形成栅电极的完成之前进行。 此外，用户不使用的栅电极部分可以不与要使用的栅电极部分电连接。

公开(公告)号：US5536603A

公开(公告)日：1996-07-16

申请号：US359547

申请日：1994-12-20

申请人： Takashi Tsuchiya ,  Masami Watase ,  Katsuya Okumura ,  Toru Watanabe

发明人： Takashi Tsuchiya ,  Masami Watase ,  Katsuya Okumura ,  Toru Watanabe

IPC分类号： G03F1/00 ,  G03F1/29 ,  G03F1/30 ,  G03F1/32 ,  G03F1/46 ,  G03F9/00

CPC分类号： G03F1/30 ,  G03F1/29 ,  G03F1/46 ,  G03F1/32

摘要： A photoresist pattern is formed on a quartz substrate. The quartz substrate is dipped into a silicon oxide supersaturated solution of hydrofluoric acid, and a silicon oxide is precipitated out of the supersaturated solution, thereby forming an SiO.sub.2 film on that exposed surface of the quartz substrate which is not covered with the photoresist pattern. After that, the photoresist pattern is ashed by oxygen plasma, and the ashed pattern is removed. The SiO.sub.2 film remaining on the quartz substrate serves as a phase shifter.

摘要翻译： 光刻胶图案形成在石英基片上。 将石英衬底浸入氢氟酸的氧化硅过饱和溶液中，从过饱和溶液中沉淀出氧化硅，由此在未被光致抗蚀剂图案覆盖的石英衬底的暴露表面上形成SiO 2膜。 之后，通过氧等离子体将光致抗蚀剂图案灰化，除去灰化图案。 保留在石英衬底上的SiO 2膜用作移相器。

公开(公告)号：US5534106A

公开(公告)日：1996-07-09

申请号：US280818

申请日：1994-07-26

申请人： William J. Cote ,  James G. Ryan ,  Katsuya Okumura ,  Hiroyuki Yano

发明人： William J. Cote ,  James G. Ryan ,  Katsuya Okumura ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  B24B37/04 ,  B24D13/14 ,  B24B37/00 ,  H01L21/00

CPC分类号： B24B37/26 ,  B24B37/04 ,  Y10S451/921

摘要： The invention is directed to a semi-conductor wafer processing machine including an arm having a wafer carrier disposed at one end. The wafer carrier is rotatable with the rotating motion imparted to a semi-conductor wafer held thereon. In first embodiment, the machine further includes a rotatable polishing pad having an upper surface divided into a plurality of wedge-shaped sections, including an abrasion section and a polishing section. The abrasion section has a relatively rough texture and the polishing section has a relatively fine texture as compared to each other. In an alternative embodiment, the pad includes an underlayer and surface layer. The surface layer includes two sections of differing hardness, both of which are harder than the underlayer. Alternatively, the surface layer may include one relatively hard section, and the underlayer may include two sections, one of which has the same hardness as the surface layer and the other of which is softer than the surface layer. In a further embodiment, the polishing pad has an annular shape, and a chemical processing table is disposed within the open central region of the pad.

摘要翻译： 本发明涉及一种半导体晶片加工机械，其包括具有设置在其一端的晶片载体的臂。 晶片载体可转动，转动运动被施加到保持在其上的半导体晶片。 在第一实施例中，机器还包括可旋转的抛光垫，其具有被分成多个楔形部分的上表面，该楔形部分包括磨损部分和抛光部分。 磨损部分具有相对粗糙的结构，并且抛光部分具有相对于彼此相对较细的结构。 在替代实施例中，垫包括底层和表面层。 表面层包括两个不同于硬度的部分，它们都比底层更硬。 或者，表面层可以包括一个相对硬的部分，并且底层可以包括两个部分，其中一个部分具有与表面层相同的硬度，而另一个部分比表面层更软。 在另一实施例中，抛光垫具有环形形状，并且化学处理台设置在垫的开放中心区域内。

公开(公告)号：US5401065A

公开(公告)日：1995-03-28

申请号：US57572

申请日：1993-05-06

申请人： Katsuya Okumura ,  Kenichi Goshima

发明人： Katsuya Okumura ,  Kenichi Goshima

IPC分类号： F16L19/03 ,  F16L19/06 ,  F16L25/00

CPC分类号： F16L19/06 ,  Y10S285/906

摘要： A fluid coupling provides a cap nut having an internal screw formed inside, a pipe having a mirror-finished surface formed at an end face and a groove in an outer periphery, a device for preventing rotation of the pipe together with the cap nut, in contact with the inner end face of the cap nut, a ferrule fitted in the groove formed in the outer periphery of the pipe, in contact with the device for preventing the rotation of the pipe together with the cap nut, the ferrule which transmits to the pipe a thrust of the cap nut in the pipe's longitudinal direction, a gasket fitted on an end part of the pipe, with the end face of the pipe in contact with the gasket through the entire circumference, and a body mirror-finished at the end face and provided with an external screw formed on the outer periphery, wherein the end face of the body is in contact with one side of the gasket the other side of which is in contact with the pipe, and the external screw of the body and the internal screw of the cap nut is tightened to a specific torque.

摘要翻译： 流体联轴器提供具有内部形成的内螺纹的盖螺母，具有在端面形成的镜面加工表面的管和外周的槽，用于防止管与盖螺母一起旋转的装置， 与盖螺母的内端面接触，配合在形成在管的外周的槽中的套圈与用于防止管与盖螺母一起旋转的装置接触，该套圈传递到 在管道的纵向方向管道盖螺母的推力，安装在管的端部上的垫圈，管的端面通过整个圆周与垫圈接触，并且在末端镜面加工 并且设置有形成在外周上的外螺纹，其中所述主体的端面与所述垫圈的另一侧与所述管接触的所述垫圈的一侧接触，并且所述主体的外螺纹和所述外螺纹 内螺丝 盖螺母拧紧到一个特定的扭矩。

公开(公告)号：US5399860A

公开(公告)日：1995-03-21

申请号：US127498

申请日：1993-09-28

申请人： Motosuke Miyoshi ,  Katsuya Okumura

发明人： Motosuke Miyoshi ,  Katsuya Okumura

IPC分类号： H01J37/06 ,  H01J37/12 ,  H01J37/16 ,  H01J37/18 ,  H01J37/28 ,  H01J37/22

CPC分类号： H01J37/28 ,  H01J2237/0245 ,  H01J2237/062 ,  H01J2237/1215

摘要： An electron microscope is provided which is reduced in total weight and shape. An electron gun cathode and an electron gun lens are enclosed in an electron gun chamber. An electron beam emitted from the electron gun chamber is converged by an objective lens to irradiate a wafer. Each of the electron gun lens and the objective lens is formed as an electrostatic field lens.

摘要翻译： 提供了一种减少总重量和形状的电子显微镜。 电子枪阴极和电子枪镜头被封装在电子枪室中。 从电子枪室发射的电子束由物镜会聚以照射晶片。 电子枪透镜和物镜中的每一个形成为静电场透镜。

公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

公开(公告)号：US5354710A

公开(公告)日：1994-10-11

申请号：US17449

申请日：1993-02-12

申请人： Hideichi Kawaguchi ,  Yoshitaka Tsunashima ,  Kikuo Yamabe ,  Katsuya Okumura

发明人： Hideichi Kawaguchi ,  Yoshitaka Tsunashima ,  Kikuo Yamabe ,  Katsuya Okumura

IPC分类号： H01L21/225 ,  H01L21/334 ,  H01L21/8242 ,  H01L21/00 ,  H01L21/02 ,  H01L21/385

CPC分类号： H01L27/10861 ,  H01L21/2256 ,  H01L29/66181 ,  Y10S438/923

摘要： A method of manufacturing semiconductor devices comprises the steps of preparing a semiconductor substrate having a surface and a natural oxide film on the surface, forming an adsorption enhancement layer on the surface of the semiconductor substrate, forming an impurity adsorption layer containing impurities on the adsorption enhancement layer, and thermally diffusing the impurities through the adsorption enhancement layer and the natural oxide film into the substrate.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在表面上制备具有表面和自然氧化膜的半导体衬底，在半导体衬底的表面上形成吸附增强层，在吸附增强层上形成含有杂质的杂质吸附层 并且通过吸附增强层和天然氧化物膜将杂质热扩散到基底中。

公开(公告)号：US5293045A

公开(公告)日：1994-03-08

申请号：US988701

申请日：1992-12-10

申请人： Motosuke Miyoshi ,  Katsuya Okumura ,  Yuichiro Yamazaki

发明人： Motosuke Miyoshi ,  Katsuya Okumura ,  Yuichiro Yamazaki

IPC分类号： H01J37/02 ,  H01J37/12

CPC分类号： H01J37/12 ,  H01J37/026

摘要： An electrostatic lens having at least three electrodes and an insulating holder for holding the electrodes, the inner wall of the holder being coated with a silicone carbide film. The silicone carbide film may be formed by means of a vapor deposition method. The energy of an electron beam is set to 1.5 keV or lower. The silicone carbide film may be added with an additive for controlling the electric conductivity of the silicone carbide film. The additive may be nitrogen.

摘要翻译： 具有至少三个电极的静电透镜和用于保持电极的绝缘保持器，保持器的内壁涂覆有碳化硅膜。 可以通过气相沉积法形成碳化硅膜。 电子束的能量设定为1.5keV以下。 可以向该碳化硅膜添加用于控制碳化硅膜的导电性的添加剂。 添加剂可以是氮气。

公开(公告)号：US5286978A

公开(公告)日：1994-02-15

申请号：US976335

申请日：1992-11-13

申请人： Yukimasa Yoshida ,  Katsuya Okumura

发明人： Yukimasa Yoshida ,  Katsuya Okumura

IPC分类号： H01J37/02 ,  H01J37/317 ,  H01L21/265 ,  H01V37/317

CPC分类号： H01J37/026 ,  H01J37/3171 ,  H01L21/265

摘要： A method of removing electric charges accumulated on a semiconductor substrate during ion implantation by irradiating a highly accelerated electron beam with an acceleration energy of 1 to 50 KeV into the portion of the substrate irradiated with ion beams. The so-formed electron beam induced current eliminates the electric charges.

摘要翻译： 在离子注入期间，通过以1〜50KeV的加速能量照射高速加速的电子束，将其照射在离子束照射的基板的部分，去除在半导体基板上累积的电荷的方法。 如此形成的电子束感应电流消除了电荷。

公开(公告)号：US5262902A

公开(公告)日：1993-11-16

申请号：US970583

申请日：1992-10-26

申请人： Katsuya Okumura ,  Kazuo Kinoshita

发明人： Katsuya Okumura ,  Kazuo Kinoshita

IPC分类号： F21V9/00 ,  H01J61/40 ,  G02B5/22

CPC分类号： H01J61/40 ,  F21V9/00

摘要： A filter for absorbing radiation of a selected wave length emitted from a mercury vapor lamp is disclosed. The filter comprises a device for providing an ozone-containing gas layer positioned between the mercury vapor lamp and an object to be illuminated, which may be formed by providing a transparent space filled with the ozone-containing gas between the lamp and the object. This provides a relatively large sized filter which has a simple construction.

摘要翻译： 公开了一种用于吸收从汞蒸汽灯发射的选定波长的辐射的滤光器。 该过滤器包括用于提供位于汞蒸汽灯和被照射物体之间的含臭氧气体的装置，其可以通过在灯和物体之间提供填充有含臭氧气体的透明空间来形成。 这提供了一种具有简单结构的较大尺寸的过滤器。