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23 条记录 (耗时 0.034 秒)

    Method of cleaning reaction tube
    2.
    发明授权
    Method of cleaning reaction tube 失效
    反应管清洗方法

    公开(公告)号：US5380370A

    公开(公告)日：1995-01-10

    申请号：US54229

    申请日：1993-04-30

    申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

    发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

    IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

    CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

    摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

    摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

    Apparatus for forming images
    5.
    发明授权
    Apparatus for forming images 失效
    用于形成图像的装置

    公开(公告)号：US4774547A

    公开(公告)日：1988-09-27

    申请号：US140912

    申请日：1987-12-29

    申请人： Shunji Uchida ,  Masaki Kakutani ,  Toshiharu Nishimura

    发明人： Shunji Uchida ,  Masaki Kakutani ,  Toshiharu Nishimura

    IPC分类号： G03D3/08 ,  G03B27/32 ,  G03G15/08 ,  G03B29/00

    CPC分类号： G03B27/32

    摘要： An image forming apparatus is disclosed, in which silver halide color photographic light-sensitive materials are used. The apparatus has a scanning exposure system and a processing system for the photographic materials. Two types of photographic materials, reflective type and transparent type, can be used interchangeably. Conditions of the exposure and the processing are automatically changed according to the types of the photographic materials.

    摘要翻译： 公开了一种图像形成装置，其中使用卤化银彩色照相感光材料。 该装置具有用于照相材料的扫描曝光系统和处理系统。 两种类型的照相材料，反射型和透明型，可以互换使用。 曝光和处理的条件根据照相材料的类型自动改变。

    Method for forming poly-silicon film
    6.
    发明申请
    Method for forming poly-silicon film 有权
    多晶硅膜的形成方法

    公开(公告)号：US20090124077A1

    公开(公告)日：2009-05-14

    申请号：US12285574

    申请日：2008-10-08

    申请人： Mitsuhiro Okada ,  Takahiro Miyahara ,  Toshiharu Nishimura

    发明人： Mitsuhiro Okada ,  Takahiro Miyahara ,  Toshiharu Nishimura

    IPC分类号： H01L21/443

    CPC分类号： H01L21/28035 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02667

    摘要： A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.

    摘要翻译： 用于形成掺杂有磷或硼的多晶硅膜的多晶硅膜形成方法包括加热放置在反应容器内部的真空气氛中的目标衬底，并将反应容器中的硅膜形成气体，用于 用磷或硼掺杂膜，以及含有成分以阻止多晶硅晶体形成柱状晶体的颗粒尺寸调节气体，并促进多晶硅晶体的小型化，从而将掺杂有磷或硼的硅膜沉积在 目标基板。

    Film formation apparatus and method for using the same
    7.
    发明申请
    Film formation apparatus and method for using the same 有权
    成膜装置及其使用方法

    公开(公告)号：US20080132079A1

    公开(公告)日：2008-06-05

    申请号：US11905628

    申请日：2007-10-02

    申请人： Mitsuhiro Okada ,  Satoshi Mizunaga ,  Yamato Tonegawa ,  Toshiharu Nishimura

    发明人： Mitsuhiro Okada ,  Satoshi Mizunaga ,  Yamato Tonegawa ,  Toshiharu Nishimura

    IPC分类号： H01L21/302

    CPC分类号： C23C16/4405 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S134/902

    摘要： A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.

    摘要翻译： 使用半导体工艺的成膜装置的方法包括：第一清洗处理，其将第一清洗气体从成膜装置的反应室的内表面除去副产物膜，同时将第一清洗气体供给到 反应室，并将反应室的内部设置在第一温度和第一压力下以启动第一清洁气体。 该方法还包括第二清洁过程，然后在将第二清洁气体供应到反应室中时，由第二清洁气体从反应室的内表面除去污染物，并将反应室的内部设定在第二温度 以及第二压力来启动第二清洁气体。 第二清洗气体包括含氯气体。

    Semiconductor processing apparatus and method for using same
    8.
    发明授权
    Semiconductor processing apparatus and method for using same 有权
    半导体处理装置及其使用方法

    公开(公告)号：US08183158B2

    公开(公告)日：2012-05-22

    申请号：US11907820

    申请日：2007-10-17

    申请人： Masahiko Tomita ,  Kota Umezawa ,  Ryou Son ,  Toshiharu Nishimura

    发明人： Masahiko Tomita ,  Kota Umezawa ,  Ryou Son ,  Toshiharu Nishimura

    IPC分类号： H01L21/311

    CPC分类号： C23C16/4405 ,  H01L21/67109

    摘要： A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

    摘要翻译： 使用半导体处理装置的方法包括将氧化气体和还原气体供给到不在其中容纳产品目标基板的处理装置的处理容器中; 使得氧化气体和还原气体在激活处理容器内的氧化气体和还原气体的第一气氛中相互反应，从而产生自由基; 以及通过使用自由基从处理容器的内表面除去污染物。

    Film formation apparatus and method of using the same
    9.
    发明授权
    Film formation apparatus and method of using the same 有权
    成膜装置及其使用方法

    公开(公告)号：US07691445B2

    公开(公告)日：2010-04-06

    申请号：US11562198

    申请日：2006-11-21

    申请人： Mitsuhiro Okada ,  Toshiharu Nishimura

    发明人： Mitsuhiro Okada ,  Toshiharu Nishimura

    IPC分类号： B05D3/04

    CPC分类号： H01L21/0217 ,  C23C16/4405 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/3185

    摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine gas and hydrogen gas.

    摘要翻译： 使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含有氟气和氢气。

    Semiconductor processing apparatus and method for using same
    10.
    发明申请
    Semiconductor processing apparatus and method for using same 有权
    半导体处理装置及其使用方法

    公开(公告)号：US20080093023A1

    公开(公告)日：2008-04-24

    申请号：US11907820

    申请日：2007-10-17

    申请人： Masahiko Tomita ,  Kota Umezawa ,  Ryou Son ,  Toshiharu Nishimura

    发明人： Masahiko Tomita ,  Kota Umezawa ,  Ryou Son ,  Toshiharu Nishimura

    IPC分类号： H01L21/00 ,  B08B7/00

    CPC分类号： C23C16/4405 ,  H01L21/67109

    摘要： A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

    摘要翻译： 使用半导体处理装置的方法包括将氧化气体和还原气体供给到不在其中容纳产品目标基板的处理装置的处理容器中; 使得氧化气体和还原气体在激活处理容器内的氧化气体和还原气体的第一气氛中相互反应，从而产生自由基; 以及通过使用自由基从处理容器的内表面除去污染物。