公开(公告)号：US5888338A

公开(公告)日：1999-03-30

申请号：US827439

申请日：1997-03-27

申请人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

发明人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

IPC分类号： H01J37/32 ,  H01J37/34 ,  H01L21/302

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3494 ,  H01J2237/3344

摘要： The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

摘要翻译： 本发明提供了一种新颖的磁控管等离子体处理装置，其特征在于包括：存储蚀刻对象的真空室，设置在真空室中并保持蚀刻对象物的第一电极，与第一电极相对配置的第二电极， 其中所述第一和第二电极彼此平行;供给单元，向所述真空室供给蚀刻气体;磁场产生装置，设置在与所述第一电极相对的与所述第二电极相对的部分上; 以及向这些第一和第二电极中的任一个供电的电源单元，并在这些平行电极之间产生放电。 磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，与磁体的两端面之间设置与第二电极相对的平面凹部 块。

公开(公告)号：US5286978A

公开(公告)日：1994-02-15

申请号：US976335

申请日：1992-11-13

申请人： Yukimasa Yoshida ,  Katsuya Okumura

发明人： Yukimasa Yoshida ,  Katsuya Okumura

IPC分类号： H01J37/02 ,  H01J37/317 ,  H01L21/265 ,  H01V37/317

CPC分类号： H01J37/026 ,  H01J37/3171 ,  H01L21/265

摘要： A method of removing electric charges accumulated on a semiconductor substrate during ion implantation by irradiating a highly accelerated electron beam with an acceleration energy of 1 to 50 KeV into the portion of the substrate irradiated with ion beams. The so-formed electron beam induced current eliminates the electric charges.

摘要翻译： 在离子注入期间，通过以1〜50KeV的加速能量照射高速加速的电子束，将其照射在离子束照射的基板的部分，去除在半导体基板上累积的电荷的方法。 如此形成的电子束感应电流消除了电荷。

公开(公告)号：US06274507B1

公开(公告)日：2001-08-14

申请号：US09226723

申请日：1999-01-07

申请人： Masaki Narita ,  Yukimasa Yoshida ,  Kei Hattori ,  Katsuya Okumura

发明人： Masaki Narita ,  Yukimasa Yoshida ,  Kei Hattori ,  Katsuya Okumura

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/54 ,  H01J37/32743 ,  H01J37/32834 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/909

摘要： A semiconductor processing apparatus includes a load chamber, an unload chamber, a common transfer chamber, a first process chamber, and a second process chamber, which are connected via gate valves. The load and unload chambers are connected to a first vacuum-exhaust mechanism including a common dry pump. The common transfer chamber is connected to a second vacuum-exhaust mechanism including a dry pump. The first and second processes chambers are connected to a third vacuum-exhaust mechanism including a common dry pump, and first and second turbo molecular pumps. The processing apparatus includes a controller which can drive and stop the dry pumps independently of each other in coordination with open/closed switching of the gate valves, while keeping the turbo molecular pumps driven.

摘要翻译： 半导体处理装置包括通过闸阀连接的装载室，卸载室，公共传送室，第一处理室和第二处理室。 装载和卸载室连接到包括普通干式泵的第一真空排气机构。 公共传送室连接到包括干式泵的第二真空排气机构。 第一和第二处理室连接到包括普通干式泵以及第一和第二涡轮分子泵的第三真空排气机构。 处理装置包括控制器，其可以在保持涡轮分子泵被驱动的同时，与闸阀的打开/关闭切换协调地彼此独立地驱动和停止干式泵。

公开(公告)号：US5178638A

公开(公告)日：1993-01-12

申请号：US732911

申请日：1991-07-19

申请人： Satoshi Kaneko ,  Taichi Fugita ,  Yukimasa Yoshida ,  Katsuya Okumura

发明人： Satoshi Kaneko ,  Taichi Fugita ,  Yukimasa Yoshida ,  Katsuya Okumura

IPC分类号： B25J19/00 ,  B25J9/06 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677

CPC分类号： H01L21/67161 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  Y10T29/41

摘要： The pressure-reduced chamber system of the invention includes a handling mechanism for loading and/or unloading a semiconductor wafer between a process chamber in which a plasma etching is carried out on a semiconductor wafer under a reduced pressure, and a pressure-reduced chamber. Further, the system includes an outer cover for covering the driving force transmitting section of the handling mechanism, a filter mounted to the outer cover such that it defines the inside and outside of the outer cover, and an exhaustion pump for evacuating the space region formed between the outer cover and the pressure-reduced chamber. Thus, when the space region is evacuated by the exhaustion pump, the dust generated from the driving force transmitting section of the handling mechanism is caught by the filter.

摘要翻译： 本发明的减压室系统包括用于在半导体晶片上减压等离子体蚀刻的处理室和减压室之间装载和/或卸载半导体晶片的处理机构。 此外，该系统包括用于覆盖处理机构的驱动力传递部分的外盖，安装到外盖上以使其限定外盖的内部和外部的过滤器以及用于抽空形成的空间区域的排出泵 在外盖和减压室之间。 因此，当通过排气泵抽空空间区域时，由处理机构的驱动力传递部产生的灰尘被过滤器捕获。

公开(公告)号：US5660671A

公开(公告)日：1997-08-26

申请号：US266635

申请日：1994-06-28

申请人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

发明人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

IPC分类号： H01J37/32 ,  H01J37/34 ,  H01L21/302

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3494 ,  H01J2237/3344

摘要： A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

摘要翻译： 磁控管等离子体处理装置包括：存储蚀刻对象的真空室;设置在真空室中并保持蚀刻对象物的第一电极;与第一电极相对设置并平行于第一电极的第二电极。 气体供给单元，其向所述真空室供给蚀刻气体，同时在与所述第一电极相对的所述部分上配置有磁场产生单元，所述电源单元与所述第二电极相对，并且电源单元将功率供给到所述第一或第 第二电极并在电极之间产生放电。 磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，在第二电极的两端面之间设置有与第二电极相对的平面凹部 磁块。

公开(公告)号：US5376211A

公开(公告)日：1994-12-27

申请号：US766324

申请日：1991-09-27

申请人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

发明人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

IPC分类号： H01J37/32 ,  H01J37/34 ,  H01L21/302 ,  H01L21/00

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3494 ,  H01J2237/3344

摘要： A magnetron plasma processing apparatus including a vacuum chamber storing an object to be etched, a first electrode provided in the vacuum chamber to hold the object, a second electrode disposed to one side of the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means including a magnetic block disposed outside the chamber on the opposite side of the second electrode and rotatable about an axis normal to the object held by the first electrode, and a power-supply unit which feeds power to either of the first and second electrodes and generates discharge between these parallel electrodes. The magnetic block has end surfaces provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between the magnetic poles.

摘要翻译： 一种磁控管等离子体处理装置，包括：存储待蚀刻对象物的真空室;设置在真空室内的用于保持物体的第一电极，设置在第一电极的一侧的第二电极，第一电极和第二电极平行 彼此相连的气体供给单元向真空室供给蚀刻气体;磁场产生装置，包括设置在第二电极的相对侧的腔室外侧的磁性块，并且能够围绕与该物体保持的物体垂直的轴旋转 第一电极和向第一和第二电极之一供电并在这些平行电极之间产生放电的电源单元。 磁性块具有设置有彼此极性相反的磁极的端面，此外，在磁极之间设置与第二电极相反的平面凹部。

公开(公告)号：US09034467B2

公开(公告)日：2015-05-19

申请号：US13192694

申请日：2011-07-28

申请人： Masamitsu Itoh ,  Katsuya Okumura ,  Taro Inada ,  Jun Watanabe

发明人： Masamitsu Itoh ,  Katsuya Okumura ,  Taro Inada ,  Jun Watanabe

IPC分类号： B32B7/12 ,  B08B7/00 ,  G03F7/20

CPC分类号： B08B7/0028 ,  B05D3/0254 ,  B05D5/00 ,  G03F7/707 ,  G03F7/70925 ,  Y10T428/28 ,  Y10T428/2848

摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

摘要翻译： 根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂 基质。

公开(公告)号：US20130313429A1

公开(公告)日：2013-11-28

申请号：US13954425

申请日：2013-07-30

申请人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Kenji Terao ,  Masahiro Hatakeyama ,  Katsuya Okumura

发明人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Kenji Terao ,  Masahiro Hatakeyama ,  Katsuya Okumura

IPC分类号： H01J37/26

CPC分类号： H01J37/265 ,  G01R31/307 ,  H01J37/04 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2594 ,  H01J2237/2817

摘要： Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

公开(公告)号：US08324726B2

公开(公告)日：2012-12-04

申请号：US11351338

申请日：2006-02-10

申请人： Katsuya Okumura ,  Yoshikazu Takahashi ,  Kazunori Takenouchi

发明人： Katsuya Okumura ,  Yoshikazu Takahashi ,  Kazunori Takenouchi

IPC分类号： H01L23/34

CPC分类号： H01L23/49811 ,  H01L23/49827 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40139 ,  H01L2224/40225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/351 ,  H05K1/115 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.

摘要翻译： 一种改善功率模块的热循环电阻和功率循环电阻的半导体器件。 在由陶瓷材料制成的支撑体上切割的多个穿孔中形成铜柱的电极部件被焊接到形成有发射极的IGBT的一侧。 通过将铜柱焊接到电极上，在IGBT中产生的热量转移到电极部件并被辐射。 此外，即使制造IGBT的材料和铜的热膨胀性不同，焊接界面上的应力降低，并且变形减小。 这样可以抑制裂纹的出现。 结果，可以提高功率模块的耐热循环电阻和功率循环电阻。

公开(公告)号：US08283755B2

公开(公告)日：2012-10-09

申请号：US13067180

申请日：2011-05-13

申请人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

发明人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

IPC分类号： H01L29/40

CPC分类号： H01L23/642 ,  H01L21/76898 ,  H01L23/367 ,  H01L23/481 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/00

摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

摘要翻译： 公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。 至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。 具有连接插头的芯片通过该连接插头与另一个芯片电连接。