公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

公开(公告)号：US5637153A

公开(公告)日：1997-06-10

申请号：US429159

申请日：1995-04-26

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

IPC分类号： C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅 通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。 在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于 作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

公开(公告)号：US5316472A

公开(公告)日：1994-05-31

申请号：US991597

申请日：1992-12-16

申请人： Reiji Niino ,  Isao Siratani ,  Yutaka Simada ,  Hiroki Fukusima ,  Hirofumi Kitayama ,  Akimichi Yonekura ,  Yuuichi Mikata

发明人： Reiji Niino ,  Isao Siratani ,  Yutaka Simada ,  Hiroki Fukusima ,  Hirofumi Kitayama ,  Akimichi Yonekura ,  Yuuichi Mikata

IPC分类号： H01L21/324 ,  C23C16/458 ,  C30B25/12 ,  H01L21/22 ,  H01L21/673 ,  F27D3/12

CPC分类号： H01L21/67309 ,  C23C16/4583 ,  C30B25/12

摘要： A semiconductor wafer boat used in a vertical CVD apparatus includes four columns fixed to upper and lower support plates. Each of the columns has a plurality of first grooves arranged at regular intervals in the vertical direction so as to place wafers in substantially parallel to each other, and a plurality of second grooves formed alternately with the first grooves. A plate ring is provided for each of the second grooves so as to improve the uniformity of thickness of a film to be formed on each wafer. Each ring has an outer diameter larger than that of a wafer, and an inner diameter smaller than that of the wafer. Each ring is placed such that there is a clearance for transferring each wafer between each ring and each wafer in the vertical direction.

摘要翻译： 在垂直CVD装置中使用的半导体晶片舟包括固定到上支撑板和下支撑板的四列。 每个列具有在垂直方向上以规则间隔布置的多个第一凹槽，以便将晶​​片彼此基本平行地放置，以及与第一凹槽交替形成的多个第二凹槽。 为每个第二槽设置板环，以提高在每个晶片上形成的膜的厚度的均匀性。 每个环的外径大于晶片的外径，内径小于晶片的内径。 每个环被放置成使得在垂直方向上存在用于在每个环和每个晶片之间传送每个晶片的间隙。

公开(公告)号：US5234869A

公开(公告)日：1993-08-10

申请号：US721819

申请日：1991-06-26

申请人： Yuuichi Mikata ,  Takahiko Moriya

发明人： Yuuichi Mikata ,  Takahiko Moriya

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/318

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3185 ,  Y10S148/114

摘要： According to this invention, there is disclosed a method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, including the steps of setting a plurality of semiconductor wafers in a boat in a reaction furnace, increasing a temperature in the reaction tube to a predetermined temperature and decreasing a pressure in the reaction tube to a predetermined pressure, and supplying Si(N(CH.sub.3).sub.2).sub.4 gas from a first gas source to the reaction tube and supplying NH.sub.3 gas from a second gas source to the reaction tube.

公开(公告)号：US5702529A

公开(公告)日：1997-12-30

申请号：US467127

申请日：1995-06-06

申请人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

发明人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/205 ,  H01L21/22 ,  H01L21/223 ,  H01L21/31 ,  H01L21/3215 ,  H01L21/768 ,  C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/452 ,  H01L21/32155 ,  H01L21/76838 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： For providing a doped semiconductor film having a uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

摘要翻译： 为了提供在半导体衬底上具有均匀厚度和均匀杂质浓度的掺杂半导体膜，可以制备硅烷等原料气体和磷化氢等杂质气体。 然后，将原料气体引入反应室，将通过分解杂质气体的方法获得的分解杂质气体引入反应室，由此在半导体上沉积多晶硅膜等掺杂半导体膜 基质。 使用副反应室，等离子体放电装置和光源作为分解杂质气体的手段。

公开(公告)号：US5370371A

公开(公告)日：1994-12-06

申请号：US75119

申请日：1993-06-10

申请人： Katsushin Miyagi ,  Shingo Watanabe ,  Yuuichi Mikata ,  Katsuya Okumura

发明人： Katsushin Miyagi ,  Shingo Watanabe ,  Yuuichi Mikata ,  Katsuya Okumura

IPC分类号： H01L21/205 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12 ,  H01L21/00 ,  H01L21/22 ,  H01L21/324 ,  C21D1/06

CPC分类号： H01L21/67103 ,  C23C16/4583 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12

摘要： A heat treatment apparatus having a heat treatment boat with a plurality of wafers held thereon, which is to be loaded in a reaction vessel which has one end opened. Once loaded, the boat effects a seal of the reaction vessel, in preparation for subjecting the wafers to heat treatment. The boat also has a heat-insulator disposed on its lower end for heat-insulating the interior of the reaction vessel during the heat-treatment. The heat-insulator includes composite plates having a metal film layer on an upper surface for reflecting heat rays generated during the heat treatment of the reaction vessel, and a cylinder enclosing the composite plates. Thus, sufficient heat-insulating effect for the heat treatment can be obtained, and stable heat-treatment can be conducted with the sufficient heat-insulating effect secured. Furthermore, the generation of particles can be suppressed, and yields of the heat treatment can be improved.

摘要翻译： 一种热处理装置，具有保存在其上的多个晶片的热处理舟，其将被装载在一端开放的反应容器中。 一旦加载，船就会对反应容器进行密封，以准备对晶片进行热处理。 该船还具有设置在其下端的绝热体，用于在热处理期间对反应容器的内部进行绝热。 绝热体包括在上表面具有用于反映在反应容器的热处理期间产生的热射线的金属膜层的复合板和封闭复合板的圆筒。 因此，可以获得用于热处理的充分的绝热效果，并且可以在确保足够的绝热效果的情况下进行稳定的热处理。 此外，可以抑制颗粒的产生，并且可以提高热处理的产率。

公开(公告)号：US5250463A

公开(公告)日：1993-10-05

申请号：US719362

申请日：1991-06-24

申请人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

发明人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/205 ,  H01L21/22 ,  H01L21/223 ,  H01L21/31 ,  H01L21/3215 ,  H01L21/768 ,  H01L21/20

CPC分类号： C23C16/45523 ,  C23C16/452 ,  H01L21/32155 ,  H01L21/76838 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： For providing a doped semiconductor film having uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

摘要翻译： 为了提供在半导体衬底上具有均匀厚度和均匀杂质浓度的掺杂半导体膜，可以制备硅烷等原料气体和磷化氢等杂质气体。 然后，将原料气体引入反应室，将通过分解杂质气体的方法获得的分解杂质气体引入反应室，由此在半导体上沉积多晶硅膜等掺杂半导体膜 基质。 使用副反应室，等离子体放电装置和光源作为分解杂质气体的手段。

公开(公告)号：US5746581A

公开(公告)日：1998-05-05

申请号：US468325

申请日：1995-06-06

申请人： Katsuya Okumura ,  Yuuichi Mikata ,  Manabu Tsujimura ,  Yoshio Ando

发明人： Katsuya Okumura ,  Yuuichi Mikata ,  Manabu Tsujimura ,  Yoshio Ando

IPC分类号： F04C25/02 ,  F04C28/00 ,  F04D19/04 ,  F04D27/00 ,  F04B41/06 ,  F04B49/00

CPC分类号： F04C28/00 ,  F04D19/046 ,  F04D27/0261

摘要： A method and apparatus for evacuating a vacuum system which includes an evacuating portion comprising first and second vacuum pumps which are connected in series. The method and the apparatus are characterized in that the first vacuum pump is operated in a range from reverse rotation to forward rotation, and the second vacuum pump is rotated unidirectionally, thereby enabling pressure control of the vacuum system over a wide range.

摘要翻译： 一种用于抽真空系统的方法和装置，该真空系统包括一个包括串联连接的第一和第二真空泵的排气部分。 该方法和装置的特征在于，第一真空泵在从反向旋转到正向旋转的范围内操作，并且第二真空泵单向旋转，从而使得能够在宽范围内对真空系统进行压力控制。

公开(公告)号：US20070061049A1

公开(公告)日：2007-03-15

申请号：US11510601

申请日：2006-08-28

申请人： Toshikatsu Masuda ,  Toshinori Shinki ,  Shuichi Samata ,  Yuuichi Mikata

发明人： Toshikatsu Masuda ,  Toshinori Shinki ,  Shuichi Samata ,  Yuuichi Mikata

IPC分类号： G05B19/418

CPC分类号： G05B19/41865 ,  G05B2219/31455 ,  G05B2219/32365 ,  G06Q10/06 ,  Y02P90/20 ,  Y02P90/26 ,  Y02P90/265

摘要： A system for designing a utility facility includes a state analyzer analyzing operational states of tools included in a production line, an extraction module extracting an operational period and a standby period of each of the tools, a calculator calculating changes in a quantity of utilities consumed by the tools in operation and in standby, based on the operational periods and the standby periods, and a facility design module designing at least any of a utility facility for supplying utilities to the tools and a utility facility for disposing of utilities discharged from the tools.

摘要翻译： 用于设计公用事业设施的系统包括分析生产线中包括的工具的运行状态的状态分析器，提取每个工具的操作周期和待机时间的提取模块，计算器计算由 操作和待机的工具，基于操作周期和待机时段，以及设计设计模块，至少设计用于向工具供应公用设施的公用设施和用于处理从工具排放的设施的公用设施。

公开(公告)号：US06983191B2

公开(公告)日：2006-01-03

申请号：US10948166

申请日：2004-09-24

申请人： Yuuichi Mikata

发明人： Yuuichi Mikata

IPC分类号： G06F19/00

CPC分类号： H01L21/67276

摘要： An availability evaluation system of a semiconductor manufacturing line, comprising a unit configured to calculate an incidence probability Xi (i=1 to k) in combination by applying a tool operation probability and a tool stoppage probability to all combinations “k” in which at least a line fabrication availability is not zero, of the combinations of operation and stoppage of tools, and by obtaining a product of the probabilities of all the tools, and a unit configured to, when a product between the incidence probability Xi of a combination and a fabrication availability Yi of the combination is defined as a probability converted fabrication availability with respect to each of the combinations, calculate an availability value of Q=Σ(i=1 to k)X1×Y1/F obtained by dividing a sum of probability converted fabrication availabilities of the combinations by a fabrication availability F at a 100% availability.

摘要翻译： 一种半导体生产线的可用性评估系统，包括被配置为通过对所有组合“k”应用工具操作概率和工具停止概率来计算出发概率Xi（i = 1至k）的单元，其中至少 线路制造可用性不是零，工具的操作和停止的组合，以及通过获得所有工具的概率的乘积，以及被配置为当组合的发生概率Xi和 将组合的制造可用性Yi定义为相对于每个组合的概率转换的制造可用性，计算Q =Σ（i = 1至k）X 1 xY 1 / F的可用性值 通过在100％可用性下将制造可用性F除以组合的概率转换制造可用性的总和来获得。