公开(公告)号：US20080007173A1

公开(公告)日：2008-01-10

申请号：US11898871

申请日：2007-09-17

申请人： Teruhiko Yamaguchi ,  Suenori Kimura ,  Minoru Suzuki ,  Yoshitaka Nakamura

发明人： Teruhiko Yamaguchi ,  Suenori Kimura ,  Minoru Suzuki ,  Yoshitaka Nakamura

IPC分类号： H01J43/04

CPC分类号： H01J43/28

摘要： A side tube includes a tube head, a funnel-shaped connection neck, and a tube main body, which are arranged along a tube axis and which are integrated together into the side tube. The size of a cross section of the tube head perpendicular to the tube axis is larger than the size of a cross section of the tube main body perpendicular to the tube axis. The radius of curvature of rounded corners of the tube head is smaller than the radius of curvature of rounded corners of the tube main body. The length of the tube head along the tube axis is shorter than the length of the tube main body along the tube axis. One surface of a faceplate is connected to the tube head. A photocathode is formed on the surface of the faceplate in its area located inside the tube head.

摘要翻译： 侧管包括沿着管轴布置并且集成在侧管中的管头，漏斗状连接颈部和管主体。 垂直于管轴的管头的横截面的尺寸大于管主体垂直于管轴线的横截面的尺寸。 管头的圆角的曲率半径小于管主体的圆角的曲率半径。 管头沿着管轴的长度短于管主体沿着管轴的长度。 面板的一个表面连接到管头。 在面板的位于管头内部的区域的表面上形成光电阴极。

公开(公告)号：US20070297257A1

公开(公告)日：2007-12-27

申请号：US11889902

申请日：2007-08-17

申请人： Tomonori Sekiguchi ,  Kazuhiko Kajigaya ,  Katsutaka Kimura ,  Riichiro Takemura ,  Tsugio Takahashi ,  Yoshitaka Nakamura

发明人： Tomonori Sekiguchi ,  Kazuhiko Kajigaya ,  Katsutaka Kimura ,  Riichiro Takemura ,  Tsugio Takahashi ,  Yoshitaka Nakamura

IPC分类号： G11C7/02

CPC分类号： G11C7/02 ,  G11C5/025 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4074 ,  G11C11/4097 ,  H01L27/0207 ,  H01L27/0214 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10897

摘要： A dynamic RAM incorporates a plurality of dynamic memory cells, each of which comprises a MOSFET having a gate set as a select terminal, one source and drain set as input/output terminals, and the other source and drain connected to storage nodes of the capacitor and a capacitor, a plurality of word lines respectively connected to the select terminals of the plurality of dynamic memory cells, a plurality of complementary bit line pairs respectively connected to the input/output terminals of the plurality of dynamic memory cells, and a sense amplifier array comprising a plurality of latch circuits which respectively amplify differences in voltage between the complementary bit line pairs placed so as to extend in directions opposite to each other from each pair of input/output terminals. Power supply lines are provided in mesh form inclusive of a portion above word drivers.

摘要翻译： 动态RAM包含多个动态存储单元，每个动态存储单元包括具有作为选择端子的栅极集合的MOSFET，作为输入/输出端子的一个源极和漏极组，以及连接到电容器的存储节点的另一个源极和漏极 以及电容器，分别连接到多个动态存储单元的选择端子的多个字线，分别连接到多个动态存储单元的输入/输出端子的多个互补位线对，以及读出放大器 阵列包括多个锁存电路，其分别放大互补位线对之间的电压差，以便从每对输入/输出端子彼此相反的方向延伸。 电源线以网格形式提供，包括字驱动器上方的一部分。

公开(公告)号：US07224016B2

公开(公告)日：2007-05-29

申请号：US10777704

申请日：2004-02-13

申请人： Yoshitaka Nakamura ,  Hidekazu Goto ,  Isamu Asano ,  Mitsuhiro Horikawa ,  Keiji Kuroki ,  Hiroshi Sakuma ,  Kenichi Koyanagi ,  Tsuyoshi Kawagoe

发明人： Yoshitaka Nakamura ,  Hidekazu Goto ,  Isamu Asano ,  Mitsuhiro Horikawa ,  Keiji Kuroki ,  Hiroshi Sakuma ,  Kenichi Koyanagi ,  Tsuyoshi Kawagoe

IPC分类号： H01L21/8242

CPC分类号： H01L28/65 ,  H01L21/7687 ,  H01L27/10814 ,  H01L27/10852

摘要： A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.

摘要翻译： 一种半导体器件包括各自具有形成在半导体衬底的一个主表面上的用于存储器选择的MISFET的存储单元，以及由用于存储器选择的MISFET的源极和漏极的底部电连接到下部电极的电容元件 经由电容绝缘膜经由形成在下电极上的第一金属层和上电极。 下部电极的底部的厚度为30nm以上。 具有高电离比和高方向性的溅射（例如PCM）适于形成下电极，以使电容器的底部仅较厚。

公开(公告)号：US20070079607A1

公开(公告)日：2007-04-12

申请号：US10558681

申请日：2005-03-14

申请人： Hisanobu Suzuki ,  Yoshitaka Nakamura ,  Yoshiyuki Takahashi ,  Yuzuru Ikeda ,  Shinichi Kusakabe ,  Tadashi Toyota

发明人： Hisanobu Suzuki ,  Yoshitaka Nakamura ,  Yoshiyuki Takahashi ,  Yuzuru Ikeda ,  Shinichi Kusakabe ,  Tadashi Toyota

IPC分类号： F01N3/10

CPC分类号： F01N9/00 ,  F01N3/0253 ,  F01N3/0821 ,  F01N3/0842 ,  F01N2610/02 ,  F01N2610/03 ,  F02B7/04 ,  F02B29/0412 ,  F02B37/007 ,  F02B37/22 ,  F02B37/24 ,  F02B75/22 ,  F02D2009/0279 ,  F02M26/08 ,  F02M26/38 ,  Y02T10/47

摘要： An internal combustion engine has a separate exhaust passage for each one of banks. An exhaust purifying catalyst is provided in each exhaust passage. The mass flow rates G1, G2 of exhaust gas that flow through the exhaust passages are individually estimated. The flow rate of exhaust gas is individually adjusted per each bank by controlling the operation of each one of exhaust gas recirculation valves such that the difference between the estimated mass flow rates G1, G2 is decreased.

摘要翻译： 一种内燃机具有用于每一组的独立排气通道。 在每个排气通道中设置有排气净化催化剂。 单独估计流经排气通道的废气的质量流量G 1，G 2。 通过控制废气再循环阀中的每一个的运行，各排量的排气的流量分别调整，使得估计的质量流量G 1，G 2之间的差减小。

公开(公告)号：US20070031618A1

公开(公告)日：2007-02-08

申请号：US10565641

申请日：2004-03-30

申请人： Yoshitaka Nakamura

发明人： Yoshitaka Nakamura

IPC分类号： B31B45/00

CPC分类号： G01R15/06 ,  Y10T428/13

摘要： To prevent a detection signal of a voltage sensor housed in a container from extremely deteriorating due to thunderstorm or the like which forms a conductive water film layer on an outer surface of an insulation cover body of the container housing a noncontact sensor, the layer being electrically connected to earthing, resulting in an earth potential. The container comprises a container body having an opening at one side, and the insulation cover body for sealing the opening of the container body. A plate type electrode insulated from a ground is housed in the container. With the cover body side opposing to a charging part of such as cables of an aerial line, a voltage induced by the plate type electrode due to aerial electric charges between the charging part and the plate type electrode in the container to allow detection of the voltage in the charging part. The cover body of the noncontact sensor is made of a fluorine contained resin such as an ethylene tetrafluoride resin.

摘要翻译： 为了防止容纳在容器中的电压传感器的检测信号由于在容纳非接触式传感器的容器的绝缘盖体的外表面上形成导电水膜层的雷暴等而极度恶化，该层是电 连接到接地，导致地电位。 容器包括在一侧具有开口的容器主体和用于密封容器主体的开口的绝缘盖体。 与地面绝缘的板状电极容纳在容器中。 由于盖主体侧与架空电线的电缆的充电部相对，由于充电部和容器内的板状电极之间的空中电荷而由板状电极感应的电压，能够检测电压 在充电部分。 非接触传感器的盖体由含氟树脂如四氟乙烯树脂制成。

公开(公告)号：US20060186687A1

公开(公告)日：2006-08-24

申请号：US11311653

申请日：2005-12-20

申请人： Toshihiro Kimura ,  Yoshitaka Nakamura

发明人： Toshihiro Kimura ,  Yoshitaka Nakamura

IPC分类号： B60N2/02

CPC分类号： B60N2/0232 ,  B60N2/067

摘要： A vehicle power seat slide device includes a first rail fixed to a vehicle, a second rail fixed to a seat and slidably supported by the first rail, a nut member fixed to the first rail by means of a bracket, a screw shaft rotatably supported by the second rail and screwed into the nut member, a driving mechanism supported by the second rail for driving the screw shaft so as to rotate, the screw shaft being rotated by the driving mechanism relative to the nut member, the second rail being moved so as to slide relative to the first rail by means of the shaft screwing into the nut member, the nut member including a protruding portion fitted into a fitting hole, which is formed on the first rail, the nut member being supported by the bracket, and the bracket fixed to the first rail together with the nut member.

公开(公告)号：US07033515B2

公开(公告)日：2006-04-25

申请号：US10686764

申请日：2003-10-17

申请人： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

发明人： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC分类号： H01L21/00

CPC分类号： B81C1/00182 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81C2201/014 ,  B81C2201/0174 ,  G02B26/0841

摘要： A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern 58 including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

摘要翻译： 一种使用材料基板制造具有薄壁部分的微结构的方法。 材料基板具有包括第一导体层101，第二导体层102，第三导体层103，插入在第一导体层和第二导体层之间的第一绝缘层104和第二绝缘层105的层叠结构 插入在第二导体层和第三导体层之间。 第一绝缘层被图案化以具有用于覆盖第二导体层的薄壁形成区域的第一掩模部分。 图案化第二绝缘层以具有用于覆盖第二导体层的薄壁形成区域的第二掩模部分。 该方法包括：通过掩模图案58将材料基板从第一导体层蚀刻到第二绝缘层，从而在第二导体部分中形成薄壁部分，掩模图案58包括对应于薄壁形成区域的非屏蔽区域 第二导体层。

公开(公告)号：US06996258B2

公开(公告)日：2006-02-07

申请号：US10795512

申请日：2004-03-09

申请人： Yoshitaka Nakamura ,  Naoki Hikishima

发明人： Yoshitaka Nakamura ,  Naoki Hikishima

IPC分类号： G03B29/00 ,  G06K9/00 ,  H04M1/00 ,  H04M1/66 ,  H04M11/00

CPC分类号： H04M1/67 ,  G06K9/00046 ,  H04M1/0214

摘要： A portable information terminal device comprising: an enclosure 180 of the portable information terminal device, an imaging element 143 provided within the enclosure 180, a first lens 141 provided within the enclosure 180 for the imaging element 143, a second lens 142, which focal length is shorter than that of the first lens, provided within the enclosure 180 for the imaging element 143, a lens selection means 180, provided within the enclosure 180, for selecting one of the first lens 141 and the second lens 142 so that a focal point of a selected lens is at the imaging element 143, and a transparent plate 122 for pressing a tip of a finger 131 of an user of the portable information terminal device, wherein the imaging element 143 captures fingerprint of the tip of the finger 131 on the transparent plate 122 by the second lens 142 selected by the lens selection means 180.

摘要翻译： 一种便携式信息终端设备，包括：便携式信息终端设备的外壳180，设置在外壳180内的成像元件143，设置在用于成像元件143的外壳180内的第一透镜141，第二透镜142， 比设置在用于成像元件143的外壳180内的第一透镜的透镜选择装置180短，该透镜选择装置180设置在外壳180内，用于选择第一透镜141和第二透镜142中的一个，使得焦点 所选择的透镜的位置在成像元件143处，以及用于按压便携式信息终端装置的用户的手指131的尖端的透明板122，其中成像元件143捕获手指131的尖端的指纹 透明板122由透镜选择装置180选择的第二透镜142。

公开(公告)号：US20050217378A1

公开(公告)日：2005-10-06

申请号：US11079137

申请日：2005-03-15

申请人： Hiroshi Ishikawa ,  Yoshitaka Nakamura ,  Hiroshi Tokunaga ,  Kenji Nagata

发明人： Hiroshi Ishikawa ,  Yoshitaka Nakamura ,  Hiroshi Tokunaga ,  Kenji Nagata

IPC分类号： G01C19/56 ,  G01P1/02 ,  G01P15/08 ,  G01P15/12 ,  G01P15/125 ,  G01P15/00

CPC分类号： G01P1/023 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/18 ,  G01P2015/0842

摘要： An inertial sensor comprising a sensing portion having a weight hung by beams extending from a frame, the weight being a movable portion. The beams include distortion portions partially arranged therein, and the distortion portions are arranged to avoid edges on which stresses applied to the beams are concentrated. Roots of the beams are not formed at right angle in connecting to the weights or the frame. The roots of the beams have wider angles. It is thus possible to dissipate areas on which stresses are concentrated and improve the impact resistance without sacrificing the sensor sensitivity. Both high sensor sensitivity and the impact resistance are obtainable in accordance with the present invention.

摘要翻译： 一种惯性传感器，包括感测部分，该感测部分具有由从框架延伸的梁悬挂的重物，该重物是可移动部分。 梁包括部分地布置在其中的变形部分，并且扭曲部分被布置成避免施加到梁的应力集中的边缘。 梁的根部在与重物或框架连接时不形成直角。 梁的根部具有较宽的角度。 因此可以消散应力集中的区域，并且在不牺牲传感器灵敏度的情况下提高抗冲击性。 根据本发明可以获得高传感器灵敏度和耐冲击性。

公开(公告)号：US06944080B2

公开(公告)日：2005-09-13

申请号：US10938794

申请日：2004-09-13

申请人： Tomonori Sekiguchi ,  Kazuhiko Kajigaya ,  Katsutaka Kimura ,  Riichiro Takemura ,  Tsugio Takahashi ,  Yoshitaka Nakamura

发明人： Tomonori Sekiguchi ,  Kazuhiko Kajigaya ,  Katsutaka Kimura ,  Riichiro Takemura ,  Tsugio Takahashi ,  Yoshitaka Nakamura

IPC分类号： G11C11/401 ,  G11C5/02 ,  G11C5/06 ,  G11C7/02 ,  G11C7/18 ,  G11C8/00 ,  G11C11/34 ,  G11C11/4097 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

CPC分类号： G11C7/02 ,  G11C5/025 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4074 ,  G11C11/4097 ,  H01L27/0207 ,  H01L27/0214 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10897

摘要： A dynamic RAM comprising a plurality of word lines respectively connected to address select terminals of a plurality of dynamic memory cells, a plurality of complementary bit line pairs respectively connected to input/output terminals of the plurality of dynamic memory cells and placed in directions opposite to one another, and a sense amplifier array which is supplied with an operating voltage according to an operation timing signal and comprises a plurality of latch circuits for respectively amplifying the differences in voltage between the complementary bit line pairs. In the dynamic RAM, common electrodes provided in opposing relationship to storage nodes corresponding to connecting points between address select MOSFETs and information storage capacitors of the plurality of dynamic memory cells, on both sides with the sense amplifier array as the center are connected to one another while circuit connections in the sense amplifier array are being ensured by wiring using the common electrodes.

摘要翻译： 一种动态RAM，包括分别连接到多个动态存储单元的地址选择端的多个字线，分别连接到所述多个动态存储单元的输入/输出端的多个互补位线对，并且被放置在与 以及根据操作定时信号提供工作电压的读出放大器阵列，并且包括用于分别放大互补位线对之间的电压差的多个锁存电路。 在动态RAM中，与以感测放大器阵列为中心的两侧的多个动态存储单元的地址选择MOSFET和信息存储电容器之间的连接点对应的存储节点提供的公共电极彼此连接 而通过使用公共电极的布线来确保读出放大器阵列中的电路连接。