公开(公告)号：US20100273321A1

公开(公告)日：2010-10-28

申请号：US12430614

申请日：2009-04-27

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: H01L21/265 ,  H01L21/31 ,  H01L21/306

CPC classification number: H01L21/266 ,  G03F7/0757 ,  G03F7/095 ,  H01L21/0332

Abstract: A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon.

Abstract translation: 在半导体衬底上形成湿溶性光刻层的系统包括提供衬底，在衬底上沉积包括第一材料的第一层，以及在衬底上沉积包含第二材料的第二层。 在一个实施例中，第一材料包括与第二材料不同的组成，第一层和第二层之一包括硅。

公开(公告)号：US20100068656A1

公开(公告)日：2010-03-18

申请号：US12210737

申请日：2008-09-15

Applicant: Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

Inventor： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

IPC: G03F7/20

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/3086

Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

公开(公告)号：US07675604B2

公开(公告)日：2010-03-09

申请号：US11427434

申请日：2006-06-29

Applicant: Li-Jui Chen ,  Tzung-Chi Fu ,  Ching-Yu Chang ,  Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau

Inventor： Li-Jui Chen ,  Tzung-Chi Fu ,  Ching-Yu Chang ,  Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau

IPC: G03B27/52 ,  G03B27/42

CPC classification number: G03F7/70341

Abstract: A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least two of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.

Abstract translation: 光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 流体保持模块，被配置为将流体保持在所述成像透镜模块和所述基板载台上的基板之间的空间中; 以及配置在所述流体保持模块中且与所述空间相邻的加热元件。 所述加热元件包括以下至少两个：对所述流体不溶的密封剂，用于密封所述流体保持模块中的所述加热元件; 密封开口，其构造在流体保持模块的顶部和侧部之一中，用于密封流体保持模块中的加热元件; 和/或配置有加热元件的不均匀的温度补偿装置。

公开(公告)号：US07675588B2

公开(公告)日：2010-03-09

申请号：US11987074

申请日：2007-11-27

Applicant: Chi-Mo Ko ,  Chao-Yin Lin ,  Ching-Yu Chang ,  Li-Sen Chuang ,  Chia-Ching Chu

Inventor： Chi-Mo Ko ,  Chao-Yin Lin ,  Ching-Yu Chang ,  Li-Sen Chuang ,  Chia-Ching Chu

IPC: G02F1/1335

CPC classification number: G02F1/133512 ,  G02F2001/133388 ,  G02F2201/121

Abstract: A system for displaying images includes a liquid crystal display panel. The liquid crystal display panel comprises a color filter substrate having a light shielding layer on a peripheral area and a common electrode on a display area and the peripheral area, and an array substrate having a pixel electrode on the display area and a separate and independent electrode with a fixed voltage on the peripheral area. The liquid crystal display panel further comprises a liquid crystal layer between the color filter substrate and the array substrate.

Abstract translation: 用于显示图像的系统包括液晶显示面板。 液晶显示面板包括在周边区域具有遮光层的彩色滤光片基板和显示区域上的公共电极以及周边区域，以及在显示区域上具有像素电极的阵列基板和独立且独立的电极 外围区域固定电压。 液晶显示面板还包括滤色器基板和阵列基板之间的液晶层。

公开(公告)号：US20100055923A1

公开(公告)日：2010-03-04

申请号：US12546812

申请日：2009-08-25

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/306

CPC classification number: H01L21/31111 ,  H01L21/30604 ,  H01L21/32134

Abstract: The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.

Abstract translation: 本公开提供了蚀刻基板的方法。 该方法包括在基板上形成抗蚀剂图案; 将蚀刻化学流体施加到所述基底，其中所述蚀刻化学流体包括扩散控制材料; 去除蚀刻化学液体; 并去除抗蚀剂图案。

公开(公告)号：US07459798B2

公开(公告)日：2008-12-02

申请号：US11309166

申请日：2006-07-05

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: An overlay mark is provided. A first material layer is formed on a substrate, and then a first trench serving as a trench type outer mark is formed in the first material layer. The first trench is partially filled with the first deposition layer. A second material is formed over the first trench and the first deposition layer. A second trench is formed exposing the first deposition layer within the first trench. The second trench is partially filled with a second deposition layer forming a third trench. A third material layer is formed on the substrate to cover the second deposition layer and the second material layer. A step height is formed on the third deposition layer between the edge of the first trench and the center of the first trench. A raised feature serving as an inner mark is formed on the third deposition layer.

Abstract translation: 提供重叠标记。 在基板上形成第一材料层，然后在第一材料层中形成用作沟槽型外标的第一沟槽。 第一沟槽部分地填充有第一沉积层。 在第一沟槽和第一沉积层上形成第二材料。 形成第二沟槽，使第一沉积层暴露在第一沟槽内。 第二沟槽部分地填充有形成第三沟槽的第二沉积层。 在基板上形成第三材料层以覆盖第二沉积层和第二材料层。 在第一沉积层的边缘和第一沟槽的中心之间的第三沉积层上形成台阶高度。 在第三沉积层上形成用作内标的凸起特征。

公开(公告)号：US20080227287A1

公开(公告)日：2008-09-18

申请号：US11687093

申请日：2007-03-16

Applicant: Ching-Yu Chang ,  Jen-Chieh Shih

Inventor： Ching-Yu Chang ,  Jen-Chieh Shih

IPC: H01L21/4763 ,  H01L21/311

CPC classification number: H01L21/31144 ,  H01L21/76808

Abstract: The present disclosure provides a method of dual damascene processing. The method includes providing a substrate having vias formed therein; forming an under-layer in the vias and on the substrate; applying a solvent washing process to the under-layer; forming a silicon contained layer on the under-layer; patterning the silicon contained layer (SCL) to form SCL openings exposing the under-layer within the SCL openings; and etching the substrate and the under-layer within the SCL openings to form trenches.

Abstract translation: 本公开提供了一种双镶嵌加工的方法。 该方法包括提供其中形成有通孔的基板; 在通孔和基板上形成下层; 对底层进行溶剂洗涤处理; 在下层上形成含硅层; 图案化含硅层（SCL）以形成暴露SCL开口内的下层的SCL开口; 并在SCL开口内蚀刻衬底和底层以形成沟槽。

公开(公告)号：US20080203322A1

公开(公告)日：2008-08-28

申请号：US12150955

申请日：2008-05-01

Applicant: Burn-Jeng Lin ,  Ching-Yu Chang

Inventor： Burn-Jeng Lin ,  Ching-Yu Chang

IPC: G21G5/00

CPC classification number: G03F7/40 ,  G03F7/2024

Abstract: A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid.

公开(公告)号：US20080106715A1

公开(公告)日：2008-05-08

申请号：US11671046

申请日：2007-02-05

Applicant: Burn Jeng Lin ,  Ching-Yu Chang

Inventor： Burn Jeng Lin ,  Ching-Yu Chang

IPC: G03B27/42

CPC classification number: G03F7/70866 ,  G03F7/70341

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and

Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，晶片台包括沿着晶片的顶部边缘设置在密封环框架上的密封环， 晶片台，用于密封晶片边缘与晶片台之间的间隙的密封环。 该实施例还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片完全浸没在浸没流体中，并且覆盖设置在流体的至少一部分上 罐，用于在流体箱内提供温度控制，流体丰富的环境; 和

公开(公告)号：US20080032508A1

公开(公告)日：2008-02-07

申请号：US11563805

申请日：2006-11-28

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/467

CPC classification number: H01L21/76816 ,  G03F7/0035 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088

Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

Abstract translation: 光刻图案的方法包括在基底上形成第一材料层; 在所述第一材料层上形成包括至少一个开口的第一图案化抗蚀剂层; 在所述第一图案化抗蚀剂层和所述第一材料层上形成第二材料层; 在所述第二材料层上形成包括其中的至少一个开口的第二图案化抗蚀剂层; 以及蚀刻由第一和第二图案化抗蚀剂层未覆盖的第一和第二材料层。