公开(公告)号：US20130163852A1

公开(公告)日：2013-06-27

申请号：US13338061

申请日：2011-12-27

Applicant: Mark Ghinovker

Inventor： Mark Ghinovker

IPC: G06K9/00 ,  H01L21/71 ,  H01L23/544

CPC classification number: G03F7/70633 ,  G06T7/0004 ,  G06T7/32 ,  G06T2207/30148

Abstract: In one embodiment, a semiconductor target for determining overlay error, if any, between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of first structures that are invariant for a plurality of first rotation angles with respect to a first center of symmetry (COS) of the first structures and a plurality of second structures that are invariant for a plurality of second rotation angles with respect to a second COS of the second structures. The first rotation angles differ from the second rotation angles, and first structures and second structures are formed on different layers of the substrate or separately generated patterns on a same layer of the substrate.

Abstract translation: 在一个实施例中，公开了用于确定衬底的两个或更多个连续层之间或在衬底的单层上的两个或更多个分开产生的图案之间的重叠误差（如果有的话）的半导体靶。 目标包括至少多个相对于第一结构的第一对称中心（COS）的多个第一旋转角度不变的第一结构，以及对于多个第二旋转不变的多个第二结构 相对于第二结构的第二COS的角度。 第一旋转角度与第二旋转角度不同，并且第一结构和第二结构形成在基板的不同层上或在基底的相同层上分开产生的图案。

公开(公告)号：US08330281B2

公开(公告)日：2012-12-11

申请号：US11830782

申请日：2007-07-30

Applicant: Mark Ghinovker ,  Michael Adel ,  Walter Dean Mieher ,  Ady Levy ,  Dan Wack

Inventor： Mark Ghinovker ,  Michael Adel ,  Walter Dean Mieher ,  Ady Levy ,  Dan Wack

IPC: H01L23/544

CPC classification number: G03F7/70633 ,  G03F9/7076 ,  G06K9/00281 ,  G06T7/0004 ,  G06T7/33 ,  G06T2207/30148 ,  Y10S438/975

Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.

Abstract translation: 公开了用于确定衬底的两个或更多个连续层之间的相对位移的重叠标记。 覆盖标记包括至少一个测试图案，用于确定在第一方向上的基板的第一和第二层之间的相对移动。 测试模式包括第一组工作区和第二组工作区。 第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。 所述第二组工作区域设置在所述基板的第二层上，并且具有至少两个工作区域，所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。 第一组工作区域通常相对于第二组工作区域成角度，从而形成X形测试图案。

公开(公告)号：US20110181868A1

公开(公告)日：2011-07-28

申请号：US12811200

申请日：2010-06-10

Applicant: Stanley E. Stokowski

Inventor： Stanley E. Stokowski

IPC: G01N21/88

CPC classification number: G03F1/84 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

Abstract: Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about −1 to −3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio.

Abstract translation: 提供了用于检查诸如极紫外（EUV）掩模坯料等未图案化物体的新颖的检查方法和系统，用于表面缺陷，包括极小的缺陷。 缺陷可以包括各种相位物体，例如高度仅为约1纳米的凸起和凹坑以及小颗粒。 检测在小于约250纳米的波长下进行，例如重新配置的深UV检测系统。 部分相干σ设定在约0.15和0.5之间。 通过使用一个或多个散焦的检查通道可以找到相位缺陷，例如在一个正的深度焦点（DOF）和一个负的DOF。 在某些实施方案中，DOF在约-1至-3和/或+1至+3之间。 可以组合多次检查通过的结果来区分缺陷类型。 检查方法可以包括应用匹配滤波器，阈值和/或校正因子，以便提高信噪比。

公开(公告)号：US07924892B2

公开(公告)日：2011-04-12

申请号：US11056855

申请日：2005-02-11

Applicant: Yung-Ho Chuang ,  J. Joseph Armstrong

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong

IPC: H01S3/30

CPC classification number: H01S3/06754 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/95676 ,  G02F1/3534 ,  G02F1/37 ,  G02F2001/354 ,  G03F1/84 ,  H01S3/067 ,  H01S3/06737 ,  H01S3/06741 ,  H01S3/06791 ,  H01S3/094007 ,  H01S3/094019

Abstract: A laser illuminator for use in an inspection system, such as a semiconductor wafer inspection system or photomask inspection system is provided. The gain medium in the illuminator comprises optical fiber, and amplification, beam splitting, frequency and/or bandwidth conversion, peak power reduction, and q-switching or mode locking may be employed. Certain constructs including doped fiber, gratings, saturable absorbers, and laser diodes are disclosed to provide enhanced illumination.

Abstract translation: 提供了一种用于检查系统的激光照明器，例如半导体晶片检查系统或光掩模检查系统。 照明器中的增益介质包括光纤，并且可以采用放大，分束，频率和/或带宽转换，峰值功率降低和q切换或模式锁定。 公开了包括掺杂光纤，光栅，可饱和吸收器和激光二极管的某些结构，以提供增强的照明。

公开(公告)号：US07876440B2

公开(公告)日：2011-01-25

申请号：US12505311

申请日：2009-07-17

Applicant: Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

Inventor： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

IPC: G01B11/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb.

Abstract translation: 公开了用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的装置和方法。 提供了各自包括第一和第二结构的一部分的目标A，B，C和D。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B被设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。 偏移量Xa，Xb，Xc和Xd中的每一个与零不同，并且Xa是相反的符号，并且与Xb不同。

公开(公告)号：US07846266B1

公开(公告)日：2010-12-07

申请号：US11356879

申请日：2006-02-17

Applicant: Tony Dibiase

Inventor： Tony Dibiase

IPC: B08B7/04 ,  B08B7/00

CPC classification number: C11D11/0047 ,  C11D11/0058

Abstract: Cleaning and reclaiming nano-imprint templates using environment friendly methods and systems is disclosed. A template may be cleaned by a combination of exposure to activated gaseous species followed by rinsing with oxygenated or hydrogenated DI water and exposure to reactive plasma to remove organic contaminant. Contaminant may be removed by forming a coating film of a water soluble polymer on the template and then peeling off the coating film. Organic residue from the film may be removed using oxygenated plasma.

Abstract translation: 公开了使用环境友好的方法和系统来清洁和回收纳米压印模板。 可以通过暴露于活化气体物质的组合来清洁模板，然后用氧化或氢化去离子水冲洗并暴露于反应性等离子体以除去有机污染物。 可以通过在模板上形成水溶性聚合物的涂膜，然后剥离涂膜来除去污染物。 可以使用氧化等离子体去除膜中的有机残余物。

公开(公告)号：US07755043B1

公开(公告)日：2010-07-13

申请号：US11888380

申请日：2007-07-31

Applicant: Alexander J. Gubbens

Inventor： Alexander J. Gubbens

IPC: G01N23/00

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/24465 ,  H01J2237/24485

Abstract: One embodiment relates to an electron beam apparatus including an electron beam column, an immersion objective lens, a Wien filter, a bright-field/dark-field detector, and an electron energy spectrometer. The bright-field/dark-field detector comprising an opening configured to pass through bright field secondary electrons and one or more detector segments around the opening configured to detect dark field secondary electrons. The electron energy spectrometer configured to detect the bright field secondary electrons passed through the opening and to measure an energy spectrum of the bright field secondary electrons. Other embodiments, aspects and features are also disclosed.

Abstract translation: 一个实施例涉及包括电子束柱，浸没物镜，维恩滤波器，亮场/暗场检测器和电子能量谱仪的电子束装置。 亮场/暗场检测器包括被配置为穿过明视场二次电子的开口和围绕开口的一个或多个检测器段，被配置为检测暗场二次电子。 电子能量谱仪被配置为检测通过该开口的明场二次电子并测量亮场二次电子的能谱。 还公开了其它实施例，方面和特征。

公开(公告)号：US20100165340A1

公开(公告)日：2010-07-01

申请号：US12642670

申请日：2009-12-18

Applicant: Yiping Xu ,  Ibrahim Abdulhalm

Inventor： Yiping Xu ,  Ibrahim Abdulhalm

IPC: G01J3/447 ,  G01B11/14 ,  G01J4/04

CPC classification number: G03F7/70625 ,  G01B11/0641 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/556 ,  G01N2021/95615 ,  G03F7/70491 ,  G03F7/70616 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

Abstract translation: 在半导体晶片上的衍射结构的衍射测量之前，必要时，首先使用光谱反射计或光谱椭偏仪测量膜下面的膜的膜厚度和折射率。 然后使用严格的模型来计算衍射结构的强度或椭偏特征。 然后使用使用偏振和宽带辐射的分光散射仪测量衍射结构，以获得衍射结构的强度或椭偏特征。 然后将这样的签名与数据库中的签名相匹配，以确定结构的光栅形状参数。

公开(公告)号：US07728968B2

公开(公告)日：2010-06-01

申请号：US11594625

申请日：2006-11-08

Applicant: Bin-Ming Benjamin Tsai ,  Yung-Ho Chuang ,  J. Joseph Armstrong ,  David Lee Brown

Inventor： Bin-Ming Benjamin Tsai ,  Yung-Ho Chuang ,  J. Joseph Armstrong ,  David Lee Brown

IPC: G01N21/00

CPC classification number: G02B17/0808 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/479 ,  G01N2021/8825 ,  G01N2021/95676 ,  G01N2201/06113 ,  G02B17/0856 ,  G02B17/0892 ,  G02B21/04 ,  G03F7/70225

Abstract: A system and method for inspecting a specimen, such as a semiconductor wafer, including illuminating at least a portion of the specimen using an excimer source using at least one relatively intense wavelength from the source, detecting radiation received from the illuminated portion of the specimen, analyzing the detected radiation for potential defects present in the specimen portion.

Abstract translation: 一种用于检查诸如半导体晶片的样本的系统和方法，包括使用来自所述源的至少一个相对较强的波长的准分子源照射所述样本的至少一部分，检测从所述被照射部分接收的辐射， 分析检测到的辐射对于存在于样品部分中的潜在缺陷。

公开(公告)号：US07684039B2

公开(公告)日：2010-03-23

申请号：US11557880

申请日：2006-11-08

Applicant: Michael Adel ,  Aviv Frommer

Inventor： Michael Adel ,  Aviv Frommer

IPC: G01B11/00

CPC classification number: G01N21/956 ,  G01N2021/213 ,  G03F7/70633

Abstract: A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NIR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.

Abstract translation: 公开了一种用于进行NIR重叠测量的方法和工具。 这样的方法涉及生成包括NIR辐射的滤波照明光束并将照明光束引导到覆盖目标上以产生被检测并用于生成覆盖度量测量的光信号。 该方法特别适用于具有在NIR范围（例如无定形碳）中透射的不透明材料层的衬底应用，并且其中使用NIR成像来获得覆盖测量。 工具实现包括用于生成延伸到NIR范围内的滤波照明光束的装置和用于从NIR照明目标接收NIR信号的检测器和用于处理信号数据以获得覆盖度量测量的计算机。