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111.
公开(公告)号:US09979489B2
公开(公告)日:2018-05-22
申请号:US15430772
申请日:2017-02-13
Applicant: FUJITSU LIMITED
Inventor: Akinori Hayakawa
IPC: G02F1/035 , H04B10/516 , G02F1/025 , G02F1/01 , H04B10/50
CPC classification number: H04B10/516 , G02F1/0121 , G02F1/0123 , G02F1/0147 , G02F1/025 , G02F1/2257 , G02F2001/0152 , G02F2201/06 , G02F2201/12 , G02F2203/05 , H04B10/501 , H04B10/572
Abstract: An optical modulation apparatus includes an optical modulation unit that includes a plurality of ring optical modulators which are coupled in cascade to each other and the ring optical waveguides of which have round-trip lengths different from each other, and a controller that performs, for at least one of the ring optical modulators, first resonance wavelength adjustment control to adjust the resonance wavelength of the ring optical modulator to one input light wavelength, performs second resonance wavelength adjustment control to specify the ring optical modulator that exhibits a minimum current amount required for the adjustment of the resonance wavelength of the ring optical waveguide to the one input light wavelength from among the ring optical modulators and adjust the resonance wavelength of the specified ring optical modulator to the one input light wavelength, and performs modulation driving control for the specified ring optical modulator.
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112.
公开(公告)号:US09904010B2
公开(公告)日:2018-02-27
申请号:US15626161
申请日:2017-06-18
Applicant: Zhengbiao Ouyang
Inventor: Zhengbiao Ouyang , Guohua Wen
CPC classification number: G02B6/1225 , G02B26/02 , G02F1/313 , G02F2201/06 , G02F2202/32 , G02F2203/06
Abstract: The present invention discloses a PIOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is a first square-lattice slab PhC, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating square pillar, a single first flat dielectric pillar and a background dielectric; the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat films, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of said second square-lattice slab PhC includes a high-refractive-index rotating square pillar, a single second flat dielectric pillar and a background dielectric is a low-refractive-index dielectric; and an normalized frequency of the optical switch is 0.41 to 0.4167.
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113.
公开(公告)号:US09857217B2
公开(公告)日:2018-01-02
申请号:US14346312
申请日:2012-09-21
Applicant: Atsushi Wakatsuki , Tadao Ishibashi
Inventor: Atsushi Wakatsuki , Tadao Ishibashi
CPC classification number: G01J1/44 , G01J2001/446 , G01J2001/448 , G02F2/002 , G02F2002/008 , G02F2201/06 , G02F2203/13 , G02F2203/50 , G02F2203/58 , H01Q3/2676 , H04B7/06 , H04B7/08 , H04B10/90 , H04B2210/006
Abstract: An opto-electronic integrated circuit includes an optical splitter (12, 13A, 13B) formed on a substrate, the optical splitter branching an input optical signal into N (N is an integer of 2 or more) optical signals, and outputting the optical signals, and N optical phase modulators (15A-15D) formed on the substrate for the respective optical signals output from the optical splitter, the optical phase modulators adjusting the phases of the optical signals based on a phase modulation characteristic in which the phase change amount changes depending on the wavelength of light, and output the optical signals.
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公开(公告)号:US20170353007A1
公开(公告)日:2017-12-07
申请号:US15533885
申请日:2015-12-08
Applicant: NEC CORPORATION
Inventor: Naoki KOBAYASHI
CPC classification number: H01S5/068 , G02F1/011 , G02F2201/06 , G02F2203/15 , G02F2203/21 , H01S3/083 , H01S3/106 , H01S5/02446 , H01S5/02469 , H01S5/026 , H01S5/14 , H01S5/142
Abstract: Provided is a variable wavelength laser device that achieves phase control of high precision while restraining thermal interference and stably outputs emission light of desired wavelength.The variable wavelength laser device of the present invention includes: an optical amplification means including a low-reflective surface that reflects light of wavelengths other than a predetermined wavelength and emits light of the predetermined wavelength; a wavelength control means for controlling wavelength of light being transmitted through the optical waveguide; a phase control means for controlling phase of light being transmitted through the optical waveguide using heat emitted by a heating means; a reflection means for totally reflecting the inputted light; and a heat dissipation means for restraining transfer of heat emitted by the heating means to regions other than a region in which the phase control means is disposed.
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公开(公告)号:US20170285441A1
公开(公告)日:2017-10-05
申请号:US15626206
申请日:2017-06-19
Applicant: Zhengbiao Ouyang
Inventor: Zhengbiao Ouyang , Quanqiang Yu
CPC classification number: G02F3/00 , G02B6/1225 , G02B6/3544 , G02F1/3511 , G02F1/365 , G02F2201/06 , G02F2202/32
Abstract: A photonic crystal all-optical D-type flip-flop includes an optical switch unit, a photonic crystal structure unit including two signal-input ends, a signal-output end and an idle port, a wave absorbing load and a reference-light source; the clock signal-input port of the photonic crystal structure unit is connected with a clock control signal; a second port of the photonic crystal structure unit is an intermediate signal-input port, said intermediate signal-input end of the photonic crystal structure unit is connected with a first intermediate signal-output end of the optical selector switch; a logic signal is connected with the first signal-input end of the optical switch unit; the absorbing load is connected with a second intermediate signal-output end of the optical switch unit; said reference-light source is connected with a second signal-input end of the optical switch unit, which is a reference-light input end connecting with the output end of said reference-light source.
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公开(公告)号:US20170285440A1
公开(公告)日:2017-10-05
申请号:US15626156
申请日:2017-06-18
Applicant: ZHENGBIAO OUYANG
Inventor: ZHENGBIAO OUYANG , GUOHUA WEN
IPC: G02F1/313
CPC classification number: G02F1/3133 , G02B6/122 , G02B6/1225 , G02B2006/12145 , G02F2201/06 , G02F2202/32 , G02F2203/07
Abstract: The present invention discloses a TEOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is a first square-lattice slab PhC, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, the first flat dielectric pillars include a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or 1 to 3 high-refractive-index flat films, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric; and an normalized operating frequency of the TEOS is 0.4057 to 0.406.
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117.
公开(公告)号:US20170285439A1
公开(公告)日:2017-10-05
申请号:US15620801
申请日:2017-06-12
Applicant: ZHENGBIAO OUYANG
Inventor: ZHENGBIAO OUYANG , GUOHUA WEN
IPC: G02F1/313
CPC classification number: G02F1/3133 , G02B6/122 , G02B6/1225 , G02B2006/12145 , G02F2201/06 , G02F2202/32 , G02F2203/07
Abstract: The present invention discloses a TMOS based on slab PhCs with a high DOP and a large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is called as a first square-lattice slab PhC with a TE bandgap, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and a normalized operating frequency of the TMOS with high DOP and large extinction ratio is 0.252 to 0.267.
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公开(公告)号:US20170255077A1
公开(公告)日:2017-09-07
申请号:US15447297
申请日:2017-03-02
Inventor: MARCEL W. PRUESSNER , William S. Rabinovich , Rita Mahon , Peter G. Goetz
CPC classification number: G02F1/292 , G01S7/4813 , G01S7/4817 , G02B6/124 , G02B6/2804 , G02B6/2813 , G02B6/2821 , G02F2201/06
Abstract: A device includes an optical splitter comprising a plurality of splitter outputs. The splitter outputs are out of phase and include a non-uniform phase front. The device includes a one-dimensional phase compensation array communicating with the optical splitter. The phase compensation array receives the non-uniform phase front and outputs a uniform phase front. The phase compensation array includes a plurality of array outputs. The device includes a tunable linear gradient phase shifter communicating with said phase compensation array to impart a linearly-varying phase shift across said plurality of array outputs, thereby steering a beam along a first angle in a first plane. The device includes a waveguide grating out-coupler communicating with said linear gradient phase shifter, and a uniform phase shifter communicating with the waveguide grating out-coupler. The uniform phase shifter steers the flat phase front along a second angle in a second plane perpendicular to said first plane.
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公开(公告)号:US20170237229A1
公开(公告)日:2017-08-17
申请号:US15425291
申请日:2017-02-06
Inventor: Sylvie MENEZO
CPC classification number: H01S5/0265 , G02F1/025 , G02F2201/06 , G02F2201/12 , G02F2202/105 , H01S5/0085 , H01S5/021 , H01S5/0218 , H01S5/02248 , H01S5/3013
Abstract: This photonic transmitter includes a layer made of dielectric material, a sublayer made of doped III-V crystalline material extending directly over the layer made of dielectric material, a laser source including the sublayer made of doped III-V crystalline material, a modulator including a waveguide formed by proximal ends facing first and second electrodes and that segment of the layer made of dielectric material which is interposed between these proximal ends, and a zone composed only of one or more solid dielectric materials, which extends from a distal end of the second electrode to a substrate, and under the entirety of the distal end of the second electrode.
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公开(公告)号:US09726822B1
公开(公告)日:2017-08-08
申请号:US15441611
申请日:2017-02-24
Applicant: Fujikura Ltd.
Inventor: Kensuke Ogawa
CPC classification number: G02B6/125 , G02B6/126 , G02B6/2766 , G02B2006/1215 , G02F1/0123 , G02F1/2257 , G02F2001/212 , G02F2201/06 , G02F2201/58 , G02F2203/07
Abstract: An optical integrated circuit includes: a mode conversion and branching section that launches light from a first optical waveguide to a second optical waveguide, converts light from the first optical waveguide into converted light, and launches the converted light to a third optical waveguide; an optical multiplexing and branching section that multiplexes lights from the second and third optical waveguides into one multiplexed light component, and branches the multiplexed light component into a light component to be input to a fourth optical waveguide and a light component to be input to a fifth optical waveguide; a phase modulation section that is provided in at least one of the fourth and fifth optical waveguides and modulates a phase of guided light; and an optical multiplexing section that multiplexes light components from the fourth and fifth optical waveguides into one light component.
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