公开(公告)号：US5847407A

公开(公告)日：1998-12-08

申请号：US794559

申请日：1997-02-03

Applicant: Rodolfo Lucero ,  Robert T. Smith ,  Lawrence N. Dworsky

Inventor： Rodolfo Lucero ,  Robert T. Smith ,  Lawrence N. Dworsky

IPC: H01J1/304 ,  H01L29/66 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J1/3042 ,  H01J31/127 ,  H01J2201/319

Abstract: A charge dissipation field emission device (200, 300, 400) includes a supporting substrate (210, 310, 410), a cathode (215, 315, 415) formed thereon, a dielectric layer (240, 340, 440) formed on the cathode (215, 315, 415) and having emitter wells (260, 360, 460) and a charge dissipation well (252, 352, 452, 453) exposing a charge-collecting surface (248, 348, 448, 449), for bleeding off gaseous positive charge generated during the operation of the charge dissipation field emission device (200, 300, 400), an electron emitter (270, 370, 470) formed in each of the emitter wells (260, 360, 460), and an anode (280, 380, 480) spaced from the dielectric layer (240, 340, 440) for collecting electrons emitted by the electron emitters (270, 370, 470).

Abstract translation: 电荷耗散场发射装置（200,300,400）包括支撑衬底（210,310,410），形成在其上的阴极（215,315,415），形成在其上的电介质层（240,340,440） 阴极（215,315,445）并具有暴露电荷收集表面（248,348,448,449）的发射极阱（260,360,460）和电荷耗散阱（252,352,452,453），用于 在电荷耗散场致发射器件（200,300,400）的操作期间产生的气态正电荷渗出，形成在每个发射极阱（260,360,460）中的电子发射器（270,370,470），以及 与所述电介质层（240,340,440）间隔开用于收集由所述电子发射器（270,370,470）发射的电子的阳极（280,380,480）。

公开(公告)号：US5834900A

公开(公告)日：1998-11-10

申请号：US834177

申请日：1997-04-15

Applicant: Mitsuru Tanaka ,  Kazuyuki Suzuki

Inventor： Mitsuru Tanaka ,  Kazuyuki Suzuki

IPC: G09G3/22 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  G09G3/10

CPC classification number: G09G3/22 ,  H01J1/3042 ,  G09G2320/029 ,  G09G2320/04 ,  G09G2320/041 ,  H01J2201/319

Abstract: A field emission type display device capable of preventing a variation in luminance of the display device due to a variation in ambient temperature. A resistive layer is formed on cathode electrodes arranged in a display region and conical emitters are arranged on the resistive layer. The resistive layer is made of a semiconductor material, resulting in being varied in resistance depending on a temperature. A monitor resistive pattern made of the same material as the resistive layer is arranged so as to measure the resistance variation in the form of a voltage variation through an OP amplifier 11, which is then fed to the control circuit. The control circuit controls a gate voltage depending on the resistance to prevent a variation in luminance of the display device.

Abstract translation: 一种能够防止由于环境温度变化引起的显示装置的亮度变化的场发射型显示装置。 电阻层形成在布置在显示区域中的阴极上，锥形发射体布置在电阻层上。 电阻层由半导体材料制成，导致根据温度的电阻变化。 布置由与电阻层相同的材料制成的监视器电阻图案，以便测量通过OP放大器11的电压变化形式的电阻变化，然后将其馈送到控制电路。 控制电路根据电阻控制栅极电压，以防止显示装置的亮度变化。

公开(公告)号：US5813892A

公开(公告)日：1998-09-29

申请号：US678565

申请日：1996-07-12

Applicant: Christopher J. Spindt ,  John M. Macaulay

Inventor： Christopher J. Spindt ,  John M. Macaulay

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated electron-emitter is fabricated according to the process in which charged particles are directed towards a track-susceptible layer (48) to form charged-particle tracks (50B.sub.1) through the track-susceptible layer. Apertures (52.sub.1) are formed through the track-susceptible layer by etching along the charged-particle tracks. A gate layer (46) is etched through the apertures to form gate openings (54.sub.1) through the gate layer. An insulating layer (24) is etched through the gate openings to form dielectric open spaces (56.sub.1, 94.sub.1, 106.sub.1, or 114.sub.1) through the insulating layer down to a resistive layer (22B) of an underlying conductive region (22). Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) are formed in the dielectric open spaces over the resistive layer.

Abstract translation: 根据其中带电粒子指向轨道敏感层（48）以通过轨道敏感层形成带电粒子轨迹（50B1）的工艺制造门控电子发射器。 通过沿着带电粒子轨迹的蚀刻，通过轨道敏感层形成孔径（521）。 通过孔径蚀刻栅极层（46），以形成通过栅极层的栅极开口（541）。 通过栅极开口蚀刻绝缘层（24），以形成通过绝缘层的下行导电区域（22）的电阻层（22B）的电介质开放空间（561,941,1061或1141）。 在电阻层上的电介质开放空间中形成电子发射元件（30B，30 / 88D1,98 / 1011或1181）。

公开(公告)号：US5804910A

公开(公告)日：1998-09-08

申请号：US599443

申请日：1996-01-18

Applicant: Kevin Tjaden ,  James J. Alwan

Inventor： Kevin Tjaden ,  James J. Alwan

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/304 ,  H01J2201/319

Abstract: A cold cathode structure, useful for field emission displays, is disclosed. A thin resistive silicon film is disposed on a glass substrate; conductive emitter tips are disposed on top thereof. An alloy of amorphous silicon and amorphous carbon is used for the emitter tips. The proportion of the carbon in the alloy increases, gradually or abruptly, from the base to the top of the emitter tips. The carbon gradient is implemented during the process step, in which an n-type silicon layer is formed from which the emitter tips are made in subsequent masking and etching steps. The amount of carbon makes the emitter tips harder and gives lower work function at greater stability. Moreover, the carbon gradient allows for additional sharpening of the emitter tips.

Abstract translation: 公开了一种用于场发射显示器的冷阴极结构。 薄电阻硅膜设置在玻璃基板上; 导电发射极尖端设置在其顶部。 非晶硅和无定形碳的合金用于发射极尖端。 合金中碳的比例逐渐或突然地从发射极尖端的基极向顶部增加。 碳梯度在工艺步骤中实现，其中形成n型硅层，在其后面的掩模和蚀刻步骤中制成发射极尖端。 碳的量使得发射极尖端更硬，并且在更高的稳定性下赋予更低的功函数。 此外，碳梯度允许发射器尖端的额外的锐化。

公开(公告)号：US5742121A

公开(公告)日：1998-04-21

申请号：US658296

申请日：1996-06-05

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/62 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A thin-film edge field emitter device includes a substrate having a first rtion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

公开(公告)号：US5712534A

公开(公告)日：1998-01-27

申请号：US688098

申请日：1996-07-29

Applicant: John Kichul Lee ,  David A. Cathey, Jr. ,  Kevin Tjaden

Inventor： John Kichul Lee ,  David A. Cathey, Jr. ,  Kevin Tjaden

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01J1/30

CPC classification number: H01L28/24 ,  H01J9/025 ,  H01L28/20 ,  H01J2201/319

Abstract: A high resistance resistor for regulating current in a field emission display is integrated into circuitry of the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).

Abstract translation: 用于调节场发射显示器中的电流的高电阻电阻器被集成到场致发射显示器的电路中。 电阻器与发射器位置电气连通，用于场发射显示器和其他电路部件，例如接地。 高电阻电阻器可以形成为高电阻率材料的层，例如本征多晶硅，掺杂有导电性降解掺杂剂的多晶硅，轻掺杂多晶硅，氮氧化钛，氮氧化钽或沉积在基板上的玻璃类型材料 的场发射显示。 在高电阻率材料中形成触点，以在电阻器和发射极部位之间以及电阻器和其它电路部件之间建立电连通。 触点可以形成为低电阻触点（例如欧姆接触）或作为高电阻触点（例如肖特基触点）。

公开(公告)号：US5684356A

公开(公告)日：1997-11-04

申请号：US625051

申请日：1996-03-29

Applicant: Shin-Puu Jeng ,  Bruce E. Gnade

Inventor： Shin-Puu Jeng ,  Bruce E. Gnade

IPC: C01B3/02 ,  H01J1/304 ,  H01J9/02 ,  H01J29/94 ,  H01J19/24 ,  H01J9/395

CPC classification number: H01J1/3042 ,  C01B3/02 ,  H01J29/94 ,  H01J9/025 ,  H01J2201/319 ,  H01J2329/00

Abstract: An emitter structure 12 for use in a field emission display device comprises a ballast layer 17 overlying ah electrically conductive coating 16 (cathode electrode), which is itself formed on an electrically insulating substrate 18. A gate electrode comprises a coating of an electrically conductive material 22 which is deposited on an insulating layer 20. Cone-shaped microtips 14 formed within apertures 34 through conductive layer 22 and insulating layer 20. In the present invention, insulating layer 20 comprises a dielectric material capable of desorbing at least ten atomic percent hydrogen, which may illustratively comprise hydrogen silsesquioxane (HSQ). HSQ is an abundant source of hydrogen which keeps deleterious oxides from forming on microtip emitters 14. HSQ also reduces the capacitance formed by cathode electrode 16 and gate electrode 22, since its relative dielectric constant is less than 3.5. In alternative embodiments, the gate insulation layer 20 additionally includes one or more sublayers of a more dense insulating material 20b and 20c, typically a plasma deposited silicon dioxide.

Abstract translation: 在场致发射显示装置中使用的发射极结构12包括覆盖在导电涂层16（阴极电极）上的压载层17，其本身形成在电绝缘基板18上。栅电极包括导电材料 沉积在绝缘层20上的锥形微尖头14形成在孔34内，通过导电层22和绝缘层20.在本发明中，绝缘层20包括能够解吸至少十个原子百分比的氢的电介质材料， 其可以说明性地包含氢倍半硅氧烷（HSQ）。 HSQ是丰富的氢源，其在微尖端发射体14上保持有害氧化物的形成。由于其相对介电常数小于3.5，所以HSQ还降低了由阴极电极16和栅电极22形成的电容。 在替代实施例中，栅极绝缘层20另外包括一个或多个更致密绝缘材料20b和20c的子层，通常为等离子体沉积的二氧化硅。

公开(公告)号：US5633560A

公开(公告)日：1997-05-27

申请号：US697703

申请日：1996-08-27

Applicant: Jammy C.-M. Huang

Inventor： Jammy C.-M. Huang

IPC: H01J1/304 ,  H01J1/00

CPC classification number: H01J1/3042 ,  H01J2201/304 ,  H01J2201/30407 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cold cathode field emission display is described. A key feature of its design is that each individual microtip has its own ballast resistor. The latter is formed from a resistive layer that has been interposed between the cathode line and the substrate. When openings for the microtips are formed in the gate line, extending down as far as the resistive layer, an overetching step is introduced. This causes the dielectric layer to be substantially undercut immediately above the resistive layer thereby creating an annular resistor positioned between the gate line and the base of the microtip.

Abstract translation: 描述冷阴极场致发射显示器。 其设计的一个关键特征是每个单独的微尖端都有自己的镇流电阻。 后者由介于阴极线和衬底之间的电阻层形成。 当在栅极线上形成微尖端的开口时，向下延伸到电阻层一侧，引入过蚀刻步骤。 这使得电介质层在电阻层的正上方基本上被切下，从而形成位于微尖端的栅极线和基极之间的环形电阻器。

公开(公告)号：US5632664A

公开(公告)日：1997-05-27

申请号：US535420

申请日：1995-09-28

Applicant: John W. Scoggan ,  Edward C. Lee

Inventor： John W. Scoggan ,  Edward C. Lee

IPC: H01J1/304 ,  H01J1/30 ,  H01J9/02

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A field emission device cathode (10) may be fabricated by forming a dielectric layer (14) on an upper surface of a resistive layer (12). A gate layer (16) is formed on the dielectric layer (14). An opening is formed in the gate layer (16) and a microtip cavity (18) is formed in the dielectric layer (14). The microtip cavity (18) extends through the opening in the gate layer (16) to the resistive layer (12). A conductive layer is formed on the gate layer (16) and the resistive layer (12) within the microtip cavity (18) to form a conductive opening layer (20) on the gate layer (16) and a microtip cavity layer (22) on the resistive layer (12). A nonrefractory metal layer is formed on the conductive opening layer (20) and the microtip cavity layer (22) to form a nonrefractory layer (26) on the conductive opening layer (20) and to form a microtip metal nonrefractory base layer (24) on the microtip cavity layer (22) such that the microtip metal nonrefractory base layer (24) serves as the base layer for a microtip (28) within the microtip cavity (18). A microtip metal refractory tip layer (30) is formed on the microtip metal nonrefractory base layer (24) to serve as the tip of the microtip (28). Finally, polishing is performed to remove a portion of the layers on the gate layer (16). The polishing continues until the microtip (28) is exposed.

Abstract translation: 场发射器件阴极（10）可以通过在电阻层（12）的上表面上形成介电层（14）来制造。 在电介质层（14）上形成栅层（16）。 在栅极层（16）中形成有开口，并且在电介质层（14）中形成微尖端腔（18）。 微尖端腔（18）延伸穿过栅极层（16）中的开口至电阻层（12）。 导电层形成在微电极腔（18）内的栅极层（16）和电阻层（12）上，以在栅极层（16）和微尖端腔层（22）上形成导电开口层（20） 在电阻层（12）上。 在导电开口层（20）和微尖端腔层（22）上形成非耐火金属层，以在导电开口层（20）上形成非抗蚀层（26）并形成微尖金属非耐火基层（24） 在微尖端腔层（22）上，使得微尖金属非耐火基底层（24）用作微尖端腔（18）内的微尖端（28）的基底层。 在微尖金属非耐火基层（24）上形成微尖端金属耐火顶层（30），作为微尖端（28）的尖端。 最后，进行抛光以去除栅极层（16）上的一部分层。 抛光继续，直到微尖（28）暴露。

公开(公告)号：US5593335A

公开(公告)日：1997-01-14

申请号：US223528

申请日：1994-04-05

Applicant: Hidetoshi Suzuki ,  Yoshiyuki Osada ,  Ichiro Nomura ,  Takeo Ono ,  Hisaaki Kawade ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Yasuhiro Hamamoto ,  Tatsuya Iwasaki ,  Aoji Isono ,  Noritake Suzuki ,  Yasuyuki Todokoro ,  Masahiro Okuda ,  Katsuhiko Shinjo

Inventor： Hidetoshi Suzuki ,  Yoshiyuki Osada ,  Ichiro Nomura ,  Takeo Ono ,  Hisaaki Kawade ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Yasuhiro Hamamoto ,  Tatsuya Iwasaki ,  Aoji Isono ,  Noritake Suzuki ,  Yasuyuki Todokoro ,  Masahiro Okuda ,  Katsuhiko Shinjo

IPC: G09G3/22 ,  H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J31/127 ,  H01J9/027 ,  G09G2300/0885 ,  G09G2310/06 ,  H01J2201/3165 ,  H01J2201/319 ,  H01J2329/00

Abstract: A method of manufacturing an electron source having a plurality of surface-conduction electron-emitting devices arranged on a substrate in row and column directions includes the forming of electron emission portions of the plurality of surface-conduction electron-emitting devices. The forming is carried out by supplying current through the plurality of surface-conduction electron-emitting devices upon dividing them into a plurality of groups. An image forming apparatus passes a current through a plurality of electron sources, which are formed on a substrate and arrayed in the form of a matrix, in dependence upon an image signal, and an image is formed by a light emission in response to electrons emitted from the plurality of electron sources.

Abstract translation: 制造具有沿行和列方向布置在基板上的多个表面传导电子发射器件的电子源的方法包括形成多个表面传导电子发射器件的电子发射部分。 通过在通过多个表面传导电子发射器件将电流分成多个组时供给电流来进行形成。 图像形成装置根据图像信号使电流通过形成在基板上并以矩阵的形式排列的多个电子源，并且通过响应于发射的电子的发光形成图像 从多个电子源。