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公开(公告)号：US20210238476A1
公开(公告)日：2021-08-05
申请号：US16777921
申请日：2020-01-31
IPC分类号： C09K11/02
摘要： A structure may include a quantum structure and a barrier layer that may coat the quantum structure. The barrier layer may include aluminum and at least one material that is X1, X2, Si, O, or combinations thereof where X1 and X2 are monovalent positively charged elements and/or divalent positively charged elements. In addition, an agglomerate, a conversion element, and a method of producing a structure are disclosed.
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公开(公告)号：US11081620B2
公开(公告)日：2021-08-03
申请号：US16466658
申请日：2017-12-15
发明人： Andreas Plössl , Norwin von Malm , Dominik Scholz , Christoph Schwarzmaier , Martin Rudolf Behringer , Alexander F. Pfeuffer
IPC分类号： H01L33/00
摘要： A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.
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123.发明申请公开(公告)号：US20210215609A1
公开(公告)日：2021-07-15
申请号：US16743742
申请日：2020-01-15
IPC分类号： G01N21/65
摘要： An apparatus, a handheld electronic device and a method for carrying out Raman Spectroscopy are disclosed. In an embodiment an apparatus includes at least one optoelectronic laser configured to provide excitation radiation to a sample, the excitation radiation being generated by an electric current flowing through the at least one optoelectronic laser during operation of the apparatus and a transistor configured to modulate the electric current flowing through the at least one optoelectronic laser, to thereby switch on and off generation of the excitation radiation.
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公开(公告)号：US11064590B2
公开(公告)日：2021-07-13
申请号：US15755013
申请日：2016-08-22
发明人： Korbinian Perzlmaier
摘要： An optoelectronic component, a method for manufacturing an optoelectronic component and a method for operating an optoelectronic component are disclosed. In an embodiment, the component includes a carrier comprising a molded body and a light-emitting semiconductor body with a first segment and a second segment, wherein the first segment and the second segment are spatially separated from one another, and wherein each segment has an emission side facing away from the carrier. The component further includes a first electrical conductor path arranged on the first segment and on the second segment on a side of the light-emitting semiconductor body facing towards the carrier and a first electrical connecting structure and a second electrical connecting structure, each electrically connecting the first segment and the second segment to one another, wherein the first and second electrical connecting structure are electrically connected to one another by the first electrical conductor path.
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125.发明申请公开(公告)号：US20210210651A1
公开(公告)日：2021-07-08
申请号：US17206911
申请日：2021-03-19
摘要： In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.
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126.发明申请公开(公告)号：US20210123772A1
公开(公告)日：2021-04-29
申请号：US16662137
申请日：2019-10-24
发明人： Zeljko PAJKIC , Markus BOSS , Thomas KIPPES
IPC分类号： G01D5/14 , H01S5/022 , H05K9/00 , H01L25/16 , H01L23/552 , H01L31/0203 , H01L31/0232
摘要： An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.
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公开(公告)号：US10993301B2
公开(公告)日：2021-04-27
申请号：US15650990
申请日：2017-07-17
IPC分类号： H05B33/22 , H05B45/37 , G02F1/01 , H05B45/40 , G02F1/1362
摘要： In various embodiments, a light-emitting diode arrangement is provided. The light-emitting diode arrangement includes a first substrate with a first light-emitting diode which is arranged on the first substrate such that light emitted by it radiates in a main emission direction of the light-emitting diode arrangement, and a second substrate with a second light-emitting diode which is arranged on the second substrate such that light emitted by it radiates in the main emission direction of the light-emitting diode arrangement. The second substrate is arranged above the first substrate, such that the second substrate at least partly covers the first substrate.
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公开(公告)号：US10991853B2
公开(公告)日：2021-04-27
申请号：US16061358
申请日：2016-12-14
发明人： Christoph Walter , Roland Enzmann , Markus Horn , Jan Seidenfaden
摘要： A carrier for an optoelectronic component includes a main body, wherein the main body includes a first electrically conductive heating layer arrangement, a first solder layer for soldering an optoelectronic component to the main body is arranged on a first side of the main body, the first electrically conductive heating layer arrangement is electrically insulated from the first solder layer and thermally connected to the first solder layer, and the first heating layer arrangement has an exposed portion on which molten solder of the first solder layer can flow to reduce an electrical resistance of the first heating layer arrangement.
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公开(公告)号：US10991683B2
公开(公告)日：2021-04-27
申请号：US16486559
申请日：2018-03-06
发明人： Norwin von Malm , Andreas Plössl
IPC分类号： H01L25/16 , H01L23/00 , H01L25/075 , H01L33/00 , H01L33/40 , H01L33/56 , H01L33/62 , H01L33/32
摘要： A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.
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公开(公告)号：US20210119091A1
公开(公告)日：2021-04-22
申请号：US16629422
申请日：2017-08-04
IPC分类号： H01L33/56 , H01L33/50 , H01L33/60 , H01L33/62 , H01S5/0235 , H01S5/02218
摘要： A method of producing an optoelectronic semiconductor device includes providing a frame part including a plurality of openings, providing an auxiliary carrier, connecting the auxiliary carrier to the frame part such that the auxiliary carrier covers at least some of the openings at an underside of the frame part, placing conversion elements onto the auxiliary carrier in at least some of the openings, placing optoelectronic semiconductor chips onto the conversion elements in at least some of the openings, applying a housing onto the conversion elements and around the semiconductor chips in at least some of the openings, and removing the frame part and the auxiliary carrier wherein a bottom surface of at least some of the optoelectronic semiconductor chips remains free of the housing.
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