摘要:
A Layer 2 network switch is partitionable into a plurality of switch fabrics. The single-chassis switch is partitionable into a plurality of logical switches, each associated with one of the virtual fabrics. The logical switches behave as complete and self-contained switches. A logical switch fabric can span multiple single-chassis switch chassis. Logical switches are connected by inter-switch links that can be either dedicated single-chassis links or logical links. An extended inter-switch link can be used to transport traffic for one or more logical inter-switch links. Physical ports of the chassis are assigned to logical switches and are managed by the logical switch. Legacy switches that are not partitionable into logical switches can serve as transit switches between two logical switches.
摘要:
A liquid crystal display (LCD) apparatus, an LCD driving apparatus, and a method for driving the LCD apparatus are provided. The LCD apparatus includes a panel; and a controlling unit which inserts gray data into at least one pixel included in a pixel group. Accordingly, the stress on a liquid crystal is reduced and thus a residual image is prevented from occurring on a screen.
摘要:
A semiconductor package includes a base substrate, a semiconductor chip mounted on the base substrate and including bonding pads, first and second connection terminals disposed adjacent to the semiconductor chip on the base substrate and electrically connected to the bonding pads, a first ball land disposed on the base substrate and electrically connected to the first connection terminal, a second ball land spaced apart from the connection terminals, the first ball land disposed between the second ball land and at least one of the first and second connection terminals, a first insulating layer covering the first ball land but exposing at least a part of the second ball land, and a first conductive wire extending onto the first insulating layer and connecting the second connection terminal to the second ball land.
摘要:
A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μm2, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.
摘要:
An organic light emitting device that improves contrast by forming a gate wiring and a data wiring of a black matrix with a concentration gradient between a conductive material of high transmittance and a conductive material of high reflectivity. The organic light emitting device according to the present invention comprises a gate wiring and a data wiring formed on an insulating substrate, a pixel portion formed by the gate wiring and the data wiring, and a pixel arranged in the pixel portion, wherein at least one of the gate wiring and the data wiring is formed of a conductive light-absorbing material. At least one of the wirings is formed of a light-absorbing material with the concentration gradient between the conductive material of the high transmittance and the conductive material of the high reflectivity. The conductive material of the high reflectivity is composed of at least one of Al, Mo, Ti, Cu, Ag, or similar material, and the conductive material with high transmittance is composed of at least one of ITO, IO, TO, IZO, ZnO or similar material. The gate wiring includes a gate line, a gate electrode of a thin film transistor, a capacitor electrode, or a power line, and the data wiring includes a data line, source and drain electrodes of the thin film transistor, the capacitor electrode, or the power line.
摘要:
A Fiber Channel router used to join fabrics. EX_ports are used to connect to the fabrics. The EX_port joins the fabric but the router will not merge into the fabric. Ports in the Fiber Channel router can be in a fabric, but other ports can be connected to other fabrics. Fiber Channel routers can be interconnected using a backbone fabric. Global, interfabric and encapsulation headers are developed to allow routing by conventional Fiber Channel switch devices in the backbone fabric and simplify Fiber Channel router routing. Phantom domains and devices must be developed for each of the fabrics being interconnected. Front phantom domains are present at each port directly connected to a fabric. Each of these is then connected to at least one translate phantom domain. Zoning is accomplished by use of a special LSAN zoning naming convention. This allows each administrator to independently define devices are accessible.
摘要:
Provided is a wiring substrate, a semiconductor device package including the wiring substrate, and methods of fabricating the same. The semiconductor device package may include a wiring substrate which may include a base film. The base film may include a mounting region and a non-mounting region. The wiring substrate may further include first wiring patterns on the non-mounting region and extending into the mounting region, second wiring patterns on the first wiring patterns of the non-mounting region, and an insulating layer on the non-mounting region, and a semiconductor device which may include bonding pads. At least one of side surfaces of the second wiring patterns adjacent to the mounting region may be electrically connected to at least one of the bonding pads of the semiconductor device.
摘要:
A method of generating an image code includes receiving a site identification (ID) of an access site, receiving a user ID and a password for accessing the access site, and generating an image code for establishing a login to the access site based upon the user ID and the password.
摘要:
An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×1016 atoms/cm2 onto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted.
摘要翻译:氧化物图案形成方法包括在半导体衬底上形成氧化物层,在给定的氧化物层中将不少于1.0×10 16原子/ cm 2的硼离子注入到氧化物层上 区域,并且在没有植入硼离子的剩余区域中湿法蚀刻氧化物层。
摘要:
The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherein the mask comprises two or more of dot pattern groups in which the non-transmission pattern group is perpendicular to a scan directional axis, and the dot pattern groups are formed in a certain shape and comprise first non-transmission patterns that are not respectively arranged in a row in an axis direction perpendicular to the scan directional axis, and second non-transmission patterns that are formed in the same arrangement as the first non-transmission patterns, but are positioned in such a manner that the second non-transmission patterns are parallel to the first non-transmission patterns and vertical axis of the scan directional axis.