公开(公告)号：US10989840B2

公开(公告)日：2021-04-27

申请号：US15921940

申请日：2018-03-15

Applicant: Applied Materials, inc.

Inventor： Tapashree Roy ,  Rutger Meyer Timmerman Thijssen ,  Robert Jan Visser

IPC: G02F1/1335 ,  G02B1/00

Abstract: Embodiments described herein relate to nanostructured trans-reflective filters having sub-wavelength dimensions. In one embodiment, the trans-reflective filter includes a film stack that transmits a filtered light within a range of wavelengths and reflects light not within the first range of wavelengths. The film stack includes a first metal film disposed on a substrate having a first thickness, a first dielectric film disposed on the first metal film having a second thickness, a second metal film disposed on the first dielectric film having a third thickness, and a second dielectric film disposed on the second metal film having a fourth thickness.

公开(公告)号：US10955606B2

公开(公告)日：2021-03-23

申请号：US16191340

申请日：2018-11-14

Applicant: Applied Materials, Inc.

Inventor： Michael Yu-tak Young ,  Ludovic Godet ,  Robert Jan Visser ,  Wayne McMillan

IPC: B29D11/00 ,  F21V8/00

Abstract: Embodiments described herein relate to methods of fabricating waveguide structures with gratings having front angles less than about 45° and back angles less than about 45°. The methods include imprinting stamps into nanoimprint resists disposed on substrates. The nanoimprint resists are subjected to a cure process. The stamps are released from the nanoimprint resist at a release angle ϑ using a release method. The nanoimprint resists are subjected to an anneal process to form a waveguide structure comprising a plurality of gratings with a front angle α and a back angle β relative to a second plane of the surface of the substrate less than about 45°.

公开(公告)号：US10580826B2

公开(公告)日：2020-03-03

申请号：US16270235

申请日：2019-02-07

Applicant: Applied Materials, Inc.

Inventor： Manivannan Thothadri ,  Robert Jan Visser

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/00 ,  H01L33/60 ,  H05K3/00 ,  H05K3/30 ,  H05K13/00 ,  H05K13/04 ,  H01L21/67 ,  H01L21/683 ,  H01L33/20 ,  H01L33/48

Abstract: An apparatus for positioning micro-devices on a destination substrate includes a first support to hold a destination substrate, a second support to provide or hold a transfer body having a surface to receive an adhesive layer, a light source to generate a light beam, a mirror configured to adjustably position the light beam on the adhesive layer on the transfer body, and a controller. The controller is configured to cause the light source to generate the light beam and adjust the mirror to position the light beam on the adhesive layer so as to selectively expose one or more portions of the adhesive layer to create one or more neutralized portions. The transfer body and the destination substrate are moved away from each other and one or more micro-devices corresponding to the one or more neutralized portions of the adhesive layer remain on the destination substrate.

公开(公告)号：US10573527B2

公开(公告)日：2020-02-25

申请号：US16376508

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Robert Jan Visser ,  Nitin Ingle ,  Zihui Li ,  Prerna Sonthalia Goradia

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US20190311909A1

公开(公告)日：2019-10-10

申请号：US16376508

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Robert Jan Visser ,  Nitin Ingle ,  Zihui Li ,  Prerna Sonthalia Goradia

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US10338415B2

公开(公告)日：2019-07-02

申请号：US15992305

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Robert Jan Visser ,  Avishek Ghosh

IPC: G02F1/01 ,  G02B27/01 ,  G02F1/00 ,  G02B5/18 ,  G06T19/00

Abstract: Embodiments described herein relate to display devices, e.g., virtual and augmented reality displays and applications. In one embodiment, a planar substrate has stepwise features formed thereon and emitter structures formed on each of the features. An encapsulating layer is disposed on the substrate and a plurality of uniform dielectric nanostructures are formed on the encapsulating layer. Virtual images generated by the apparatus disclosed herein provide for improved image clarity by reducing chromatic aberrations at an image plane.

公开(公告)号：US10256382B2

公开(公告)日：2019-04-09

申请号：US15837654

申请日：2017-12-11

Applicant: Applied Materials, Inc.

Inventor： John M. White ,  Christopher Dennis Bencher ,  Manivannan Thothadri ,  Robert Jan Visser

IPC: H01L33/58 ,  H01L33/00 ,  H01L25/065 ,  H01L27/15 ,  G02B27/22 ,  H04N13/307 ,  G02B17/00 ,  G02B3/00 ,  G02B5/04 ,  G02B19/00

Abstract: The present disclosure generally relates to light field displays and methods of displaying images with light field arrays. In one example, the present disclosure relates to pixel arrangements for use in light field displays. Each pixel includes a plurality of LEDs, such as micro LEDs, positioned adjacent respective micro-lenses of each pixel.

公开(公告)号：US10217793B2

公开(公告)日：2019-02-26

申请号：US15619226

申请日：2017-06-09

Applicant: Applied Materials, Inc.

Inventor： Manivannan Thothadri ,  Robert Jan Visser

IPC: H01L21/683 ,  H01L27/15 ,  H01L33/60 ,  H05K3/00 ,  H05K3/30 ,  H05K13/00 ,  H05K13/04 ,  H01L21/67 ,  H01L33/48

Abstract: An apparatus for positioning micro-devices on a destination substrate includes a first support to hold a destination substrate, a second support to provide or hold a transfer body having a surface to receive an adhesive layer, a light source to generate a light beam, a mirror configured to adjustably position the light beam on the adhesive layer on the transfer body, and a controller. The controller is configured to cause the light source to generate the light beam and adjust the mirror to position the light beam on the adhesive layer so as to selectively expose one or more portions of the adhesive layer to create one or more neutralized portions. The transfer body and the destination substrate are moved away from each other and one or more micro-devices corresponding to the one or more neutralized portions of the adhesive layer remain on the destination substrate.

公开(公告)号：US10163629B2

公开(公告)日：2018-12-25

申请号：US15045081

申请日：2016-02-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Nilesh Chimanrao Bagul ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: H01L21/02 ,  C23C16/448 ,  H01L21/3065 ,  C23C16/04 ,  C23C16/455 ,  H01L21/306 ,  H01L21/32 ,  H01L21/465

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

公开(公告)号：US20180350604A1

公开(公告)日：2018-12-06

申请号：US15992656

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Robert Jan Visser ,  Prerna Goradia ,  Tapash Chakraborty ,  Ranga Rao Arnepalli ,  Darshan Thakare ,  Geetika Bajaj

IPC: H01L21/288 ,  C23C16/448 ,  C23C16/06 ,  C23F1/00

Abstract: Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.