公开(公告)号：US08749015B2

公开(公告)日：2014-06-10

申请号：US13299254

申请日：2011-11-17

申请人： Donald R. Disney ,  Andrew P. Edwards ,  Hui Nie ,  Richard J. Brown ,  Isik C. Kizilyalli ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Donald R. Disney ,  Andrew P. Edwards ,  Hui Nie ,  Richard J. Brown ,  Isik C. Kizilyalli ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/06

CPC分类号： H01L21/761 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/765 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/66212 ,  H01L29/6631 ,  H01L29/66909 ,  H01L29/8083 ,  H01L29/872

摘要： A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer.

摘要翻译： 一种用于制造边缘终端结构的方法包括提供具有第一表面和第二表面和第一导电类型的衬底，形成耦合到衬底的第一表面的第一导电类型的第一GaN外延层，并形成第二 与第一导电类型相反的第二导电类型的GaN外延层。 第二GaN外延层耦合到第一GaN外延层。 该方法还包括将离子注入第二GaN外延层的第一区域以将第二GaN外延层的第二区域与第二GaN外延层的第三区域电隔离。 该方法还包括形成耦合到第二GaN外延层的第二区域并形成耦合到第二GaN外延层的第三区域的边缘端接结构的有源器件。

公开(公告)号：US20130127006A1

公开(公告)日：2013-05-23

申请号：US13300028

申请日：2011-11-18

申请人： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  lsik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

发明人： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  lsik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

IPC分类号： H01L29/47 ,  H01L21/20

CPC分类号： H01L29/66143 ,  H01L29/0661 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66212 ,  H01L29/872

摘要： A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.

摘要翻译： 一种制造III族氮化物半导体器件的方法包括提供具有第一表面和与第一表面相对的第二表面的III族氮化物衬底，形成耦合到III族氮化物衬底的第一表面的III族氮化物外延层，以及 去除所述III族氮化物外延层的至少一部分以形成第一暴露表面。 该方法还包括形成耦合到第一暴露表面的电介质层，去除电介质层的至少一部分，以及形成耦合到电介质层的剩余部分的金属层，使得电介质层的剩余部分被布置 在III族氮化物外延层和金属层之间。

公开(公告)号：US20130112985A1

公开(公告)日：2013-05-09

申请号：US13289219

申请日：2011-11-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L29/66909 ,  H01L21/823487 ,  H01L27/0605 ,  H01L27/0611 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/098 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/8083 ,  H01L29/872

摘要： An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction.

公开(公告)号：US07941024B2

公开(公告)日：2011-05-10

申请号：US12207521

申请日：2008-09-10

申请人： David P. Bour ,  Scott W. Corzine

发明人： David P. Bour ,  Scott W. Corzine

IPC分类号： G02B6/10

CPC分类号： H01S5/12 ,  B82Y20/00 ,  G02B6/131 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

摘要翻译： 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。

公开(公告)号：US20090179229A1

公开(公告)日：2009-07-16

申请号：US12356310

申请日：2009-01-20

申请人： Jeffrey N. Miller ,  David P. Bour ,  Virginia M. Robbins ,  Steven D. Lester

发明人： Jeffrey N. Miller ,  David P. Bour ,  Virginia M. Robbins ,  Steven D. Lester

IPC分类号： H01L29/22

CPC分类号： H01L21/28575 ,  H01L33/14 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

摘要翻译： 根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。 欧姆接触还包括提供金属接触的金属层。 不同的II-VI化合物半导体的第二层位于金属层附近。

公开(公告)号：US20090129426A1

公开(公告)日：2009-05-21

申请号：US12359326

申请日：2009-01-25

申请人： Michael R. T. Tan ,  Scott W. Corzine ,  David P. Bour

发明人： Michael R. T. Tan ,  Scott W. Corzine ,  David P. Bour

IPC分类号： H01S3/083

CPC分类号： B82Y20/00 ,  H01S5/0424 ,  H01S5/1071 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2272 ,  H01S5/34 ,  H01S5/3428 ,  H01S5/34333 ,  H01S2304/12

摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.

摘要翻译： 本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子 多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

公开(公告)号：US07440666B2

公开(公告)日：2008-10-21

申请号：US11154034

申请日：2005-06-16

申请人： David P. Bour ,  Scott W. Corzine

发明人： David P. Bour ,  Scott W. Corzine

IPC分类号： G02B6/10 ,  H01S5/12

CPC分类号： H01S5/12 ,  B82Y20/00 ,  G02B6/131 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

摘要翻译： 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。

公开(公告)号：US07352788B2

公开(公告)日：2008-04-01

申请号：US11203699

申请日：2005-08-15

申请人： Scott W. Corzine ,  David P. Bour

发明人： Scott W. Corzine ,  David P. Bour

IPC分类号： H01S5/00

CPC分类号： H01S5/0424 ,  B82Y20/00 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/20 ,  H01S5/34333 ,  H01S2304/12

摘要： In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.

摘要翻译： 在一个方面，VCSEL包括具有垂直生长部分的横向邻近于第一光学反射器的基底区域和在第一光学反射体的至少一部分上方垂直包括氮化物半导体材料的横向生长部分。 有源区域在基极区域的横向生长部分的至少一部分上垂直地具有至少一个氮化物半导体量子阱，并且包括第一导电类型的第一掺杂物。 接触区域包括横向邻近有源区的氮化物半导体材料和与第一导电类型相反的第二导电类型的第二掺杂剂。 第二光学反射器垂直于有源区域并且与第一光学反射器形成垂直的光学腔，其与有源区的至少一个量子阱的至少一部分重叠。 还描述了制造VCSEL的方法。

公开(公告)号：US07349456B2

公开(公告)日：2008-03-25

申请号：US11246745

申请日：2005-10-07

申请人： David P. Bour ,  Scott W Corzine

发明人： David P. Bour ,  Scott W Corzine

IPC分类号： H01S5/00

CPC分类号： H01S5/20 ,  B82Y20/00 ,  H01S5/06213 ,  H01S5/1228 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/3422 ,  H01S5/34306

摘要： Purely gain-coupled diffraction gratings may be realized for use in QCLs and other edge emitting lasers that lack a typical p-n junction. The periodic, typically heavily n-doped regions of doped diffraction gratings are replaced with p-type regions having significantly lower doping.

摘要翻译： 可以实现纯增益耦合衍射光栅用于QCL和其他缺少典型p-n结的边缘发射激光器。 掺杂衍射光栅的周期性，典型地高n掺杂区域被具有显着更低掺杂的p型区域代替。

公开(公告)号：US07215848B2

公开(公告)日：2007-05-08

申请号：US10768858

申请日：2004-01-29

申请人： Michael R. T. Tan ,  William Trutna ,  David P. Bour ,  Michael H. Leary

发明人： Michael R. T. Tan ,  William Trutna ,  David P. Bour ,  Michael H. Leary

IPC分类号： G02B6/26

CPC分类号： G02B6/29335 ,  G02B6/12007 ,  G02B6/2746 ,  G02B2006/12097 ,  G02B2006/12104 ,  G02F1/0955 ,  G02F2203/15

摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.

摘要翻译： 公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。 光隔离器利用耦合到第一和第二光波导的谐振器。 谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。 谐振器可以在施加的磁场中使用铁磁材料层。 铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。 磁场可以由在铁磁材料层上变化的外部磁场产生。 或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。