摘要:
A semiconductor memory device according to an embodiment of the present invention includes a substrate, a gate insulator formed on the substrate and serving as an F-N (Fowler-Nordheim) tunneling film, a first floating gate formed on the gate insulator, a first intergate insulator formed on the first floating gate and serving as an F-N tunneling film, a second floating gate formed on the first intergate insulator, a second intergate insulator formed on the second floating gate and serving as a charge blocking film, and a control gate formed on the second intergate insulator.
摘要:
A print controller controlling a print process in which black ink having permeability to a recording medium and a plurality of kinds of chromatic color ink having permeability to the recording medium different from the permeability of the black ink are used to form an image on the recording medium. The subject pixel setting unit sets, as a subject pixel, one pixel that satisfies conditions that the pixel is a black pixel and that peripheral pixels that are located adjacent to the pixel and that surround the pixel include at least one chromatic pixel. The reducing unit reduces a black component value of the subject pixel to a reduced black component value. The increasing unit increases chromatic component values of the subject pixel to increased chromatic component values. The print executing unit executes the print based on the reduced black component value and the increased chromatic component values of the subject pixel.
摘要:
A semiconductor device according to an embodiment includes: a semiconductor region on a semiconductor substrate, an upper face and side faces of the semiconductor region forming a saddle-like shape, convex portions being formed at both ends of a region including a saddle point in the upper face; a gate insulating film on the upper face of the semiconductor region except upper faces of the convex portions, and on side faces of the convex portions on a side of the region including the saddle point in the upper face; a gate electrode on the gate insulating film and including: a main body part located immediately above the region including the saddle point in the upper face; and leg portions leading to the main body portion and covering the side faces of the semiconductor region, a length of the leg portions being greater than a length of the main body portion.
摘要:
The present invention provides an image processing device for processing an original image having a first number of horizontal lines parallel to one another. Each of the first number of horizontal lines includes a second number of pixels. The image processing device has a processing unit and a storage unit. The processing unit resizes the original image to an output image with a scaling factor, the output image having a plurality of target pixels. The storage unit stores a gray scale of each pixel in at least one of the first number of horizontal lines. The processing unit has a first calculating unit, a selecting unit, and a second calculating unit. The first calculating unit calculates a maximum number of horizontal lines which the storage unit is able to store at once, based on the second number of pixels, the maximum number being less than the first number. The selecting unit selects a resizing method to resize the original image based on the scaling factor and the maximum number of horizontal lines. The second calculating unit calculates a gray scale of the target pixel in the output image with the selected method.
摘要:
According to one embodiment, a resistance change memory includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit which is provided at the intersection of the first interconnect line and the second interconnect line and which includes a memory element and a non-ohmic element that are connected in series. The memory element stores data in accordance with a change in a resistance state. The non-ohmic element includes a metal layer, a first semiconductor layer containing a first impurity, and a second semiconductor layer which is provided between the first semiconductor layer and the metal layer and which has an unevenly distributed layer.
摘要:
When executing a color conversion process, a CPU determines whether a CMYK conversion indication flag Fc has been set. If the flag Fc has been set, then the CPU reads data of an RGB-CMYK conversion table and performs a cube interpolation process by using the RGB-CMYK conversion table. On the other hand, if the flag Fc has not been set, then the CPU reads data of an RGB-RGB conversion table and performs a triangular pyramid interpolation process by using the RGB-RGB conversion table.
摘要:
A polymer removing apparatus for use in removing polymer annularly adhered to a peripheral portion of a target substrate includes a processing chamber for accommodating the target substrate having the polymer annularly adhered to the peripheral portion thereof; a mounting table for mounting the target substrate thereon; and a laser irradiation unit for irradiating ring-shaped laser light at once to the whole polymer annularly adhered to the target substrate. The polymer removing apparatus further includes an ozone gas supply unit for supplying an ozone gas to the polymer annularly adhered to the target substrate and a gas exhaust unit for exhausting the ozone gas.
摘要:
In an image-forming method, a device reads line data L for one line and determines whether the resolution of the line data L in the main scanning direction is greater than or equal to a threshold th. If the resolution is greater than or equal to the threshold th, then a multiple line process is performed on the line data L to divide this data into two sets of partial line data L1 and L2. The partial line data L1 and L2 are used to form two lines at locations shifted from each other in the sub-scanning direction. However, if the resolution of the line data L is smaller than the threshold th, then a single line process is performed to divide the line data L into two segments Q1 and Q2. The segments Q1 and Q2 of the line data L are used to form a single line at the same location in the sub-scanning direction by printing the segment Q1 in the first main scanning operation and by printing the segment Q2 in the second main scanning operation.
摘要:
A semiconductor integrated circuit device according to an embodiment of the present invention includes: a semiconductor substrate; an internal circuit formed on the semiconductor substrate, a first potential and a second potential being supplied to the internal circuit, thereby applying an operating voltage to the internal circuit; a fuse disposed above a semiconductor region of a first conductivity type, and electrically connected to the internal circuit, the semiconductor region being supplied with the second potential and being formed in the semiconductor substrate; and a protective element formed in the semiconductor region of the first conductivity type and protecting the internal circuit in response to positive and negative abnormal voltages generated in a wiring through which the fuse and the internal circuit are connected to each other.
摘要:
A memory includes active areas and an isolation on a semiconductor substrate. A tunnel dielectric film is on active areas. Floating gates include lower gate parts and upper gate parts. An upper gate part has a larger width than that of a lower gate part on a cross section perpendicular to an extension direction of an active area, and is provided on the lower gate part. An intermediate dielectric film is on an upper surface and a side surface of each floating gate. The control gate is on an upper surface and a side surface of each floating gate via the intermediate dielectric film. A height of a lower end of each control gate from a surface of the semiconductor substrate is lower than a height of an interface between the upper gate part and the lower gate part from the surface of the semiconductor substrate.