Semiconductor memory device
    121.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号:US08289782B2

    公开(公告)日:2012-10-16

    申请号:US12719420

    申请日:2010-03-08

    IPC分类号: G11C16/04

    摘要: A semiconductor memory device according to an embodiment of the present invention includes a substrate, a gate insulator formed on the substrate and serving as an F-N (Fowler-Nordheim) tunneling film, a first floating gate formed on the gate insulator, a first intergate insulator formed on the first floating gate and serving as an F-N tunneling film, a second floating gate formed on the first intergate insulator, a second intergate insulator formed on the second floating gate and serving as a charge blocking film, and a control gate formed on the second intergate insulator.

    摘要翻译: 根据本发明的实施例的半导体存储器件包括:衬底,形成在衬底上并用作FN(Fowler-Nordheim)隧穿膜的栅极绝缘体,形成在栅极绝缘体上的第一浮栅,第一栅极绝缘体 形成在第一浮栅上并用作FN隧道膜,形成在第一栅极绝缘体上的第二浮栅,形成在第二浮栅上并用作电荷阻挡膜的第二栅极绝缘体,以及形成在第一浮栅上的控制栅 第二隔间绝缘子。

    Print controller configured to suppress bleed
    122.
    发明授权
    Print controller configured to suppress bleed 有权
    打印控制器配置为抑制流血

    公开(公告)号:US08279505B2

    公开(公告)日:2012-10-02

    申请号:US12692973

    申请日:2010-01-25

    申请人: Masaki Kondo

    发明人: Masaki Kondo

    IPC分类号: G03F3/08

    摘要: A print controller controlling a print process in which black ink having permeability to a recording medium and a plurality of kinds of chromatic color ink having permeability to the recording medium different from the permeability of the black ink are used to form an image on the recording medium. The subject pixel setting unit sets, as a subject pixel, one pixel that satisfies conditions that the pixel is a black pixel and that peripheral pixels that are located adjacent to the pixel and that surround the pixel include at least one chromatic pixel. The reducing unit reduces a black component value of the subject pixel to a reduced black component value. The increasing unit increases chromatic component values of the subject pixel to increased chromatic component values. The print executing unit executes the print based on the reduced black component value and the increased chromatic component values of the subject pixel.

    摘要翻译: 控制打印处理的打印控制器,其中使用其中具有对记录介质的渗透性的黑色油墨和与记录介质的渗透性不同于黑色油墨的渗透性的多种彩色油墨在记录介质上形成图像 。 被摄体像素设定单元将像素为黑色像素的条件的一个像素设定为被摄体像素,并且与像素相邻并且围绕该像素的周边像素包括至少一个彩色像素。 还原单元将被摄体像素的黑色分量值减少到黑色分量值的降低。 增加单元增加对象像素的色分量值以增加色分量值。 打印执行单元基于目标像素的减小的黑色分量值和增加的色彩分量值执行打印。

    SEMICONDUCTOR DEVICE
    123.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20120223374A1

    公开(公告)日:2012-09-06

    申请号:US13399018

    申请日:2012-02-17

    IPC分类号: H01L29/772

    摘要: A semiconductor device according to an embodiment includes: a semiconductor region on a semiconductor substrate, an upper face and side faces of the semiconductor region forming a saddle-like shape, convex portions being formed at both ends of a region including a saddle point in the upper face; a gate insulating film on the upper face of the semiconductor region except upper faces of the convex portions, and on side faces of the convex portions on a side of the region including the saddle point in the upper face; a gate electrode on the gate insulating film and including: a main body part located immediately above the region including the saddle point in the upper face; and leg portions leading to the main body portion and covering the side faces of the semiconductor region, a length of the leg portions being greater than a length of the main body portion.

    摘要翻译: 根据实施例的半导体器件包括:半导体衬底上的半导体区域,形成鞍状的半导体区域的上表面和侧面,在包括鞍状的区域中的鞍点的两端形成有凸部 上面 除了凸部的上表面以外的半导体区域的上表面上以及在包括上表面的鞍点的区域的一侧的凸部的侧面上的栅极绝缘膜; 栅极绝缘膜上的栅极电极,包括:主体部分,位于上表面的包括鞍点的区域的正上方; 以及引导到主体部分并覆盖半导体区域的侧面的腿部分,腿部的长度大于主体部分的长度。

    Image processing devices and methods for resizing an original image therefor
    124.
    发明授权
    Image processing devices and methods for resizing an original image therefor 有权
    用于调整原始图像大小的图像处理设备和方法

    公开(公告)号:US08169656B2

    公开(公告)日:2012-05-01

    申请号:US11656013

    申请日:2007-01-22

    IPC分类号: G06K15/02 G06F3/12

    CPC分类号: G06T3/4007 H04N1/3935

    摘要: The present invention provides an image processing device for processing an original image having a first number of horizontal lines parallel to one another. Each of the first number of horizontal lines includes a second number of pixels. The image processing device has a processing unit and a storage unit. The processing unit resizes the original image to an output image with a scaling factor, the output image having a plurality of target pixels. The storage unit stores a gray scale of each pixel in at least one of the first number of horizontal lines. The processing unit has a first calculating unit, a selecting unit, and a second calculating unit. The first calculating unit calculates a maximum number of horizontal lines which the storage unit is able to store at once, based on the second number of pixels, the maximum number being less than the first number. The selecting unit selects a resizing method to resize the original image based on the scaling factor and the maximum number of horizontal lines. The second calculating unit calculates a gray scale of the target pixel in the output image with the selected method.

    摘要翻译: 本发明提供了一种用于处理具有彼此平行的第一数量的水平线的原始图像的图像处理装置。 第一数量的水平线中的每一个包括第二数量的像素。 图像处理装置具有处理单元和存储单元。 处理单元将原始图像调整为具有缩放因子的输出图像,输出图像具有多个目标像素。 存储单元将每个像素的灰度级存储在第一数量的水平行中的至少一个中。 处理单元具有第一计算单元,选择单元和第二计算单元。 第一计算单元基于第二数量的像素计算存储单元能够一次存储的最大水平行数,最大数目小于第一数量。 选择单元基于缩放因子和最大数量的水平线选择调整大小的方法来调整原始图像的大小。 第二计算单元使用所选择的方法计算输出图像中的目标像素的灰度。

    RESISTANCE CHANGE MEMORY
    125.
    发明申请
    RESISTANCE CHANGE MEMORY 有权
    电阻变化记忆

    公开(公告)号:US20110233501A1

    公开(公告)日:2011-09-29

    申请号:US13051500

    申请日:2011-03-18

    IPC分类号: H01L45/00

    摘要: According to one embodiment, a resistance change memory includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit which is provided at the intersection of the first interconnect line and the second interconnect line and which includes a memory element and a non-ohmic element that are connected in series. The memory element stores data in accordance with a change in a resistance state. The non-ohmic element includes a metal layer, a first semiconductor layer containing a first impurity, and a second semiconductor layer which is provided between the first semiconductor layer and the metal layer and which has an unevenly distributed layer.

    摘要翻译: 根据一个实施例,电阻变化存储器包括沿第一方向延伸的第一互连线,在与第一方向相交的第二方向上延伸的第二互连线,以及设置在第一互连线 和第二互连线,并且包括串联连接的存储元件和非欧姆元件。 存储元件根据电阻状态的变化存储数据。 非欧姆元件包括金属层,含有第一杂质的第一半导体层和设置在第一半导体层和金属层之间并且具有不均匀分布的层的第二半导体层。

    Color-converting device
    126.
    发明授权
    Color-converting device 有权
    色彩转换装置

    公开(公告)号:US07944584B2

    公开(公告)日:2011-05-17

    申请号:US10831331

    申请日:2004-04-26

    IPC分类号: G06F15/00

    CPC分类号: H04N1/6019

    摘要: When executing a color conversion process, a CPU determines whether a CMYK conversion indication flag Fc has been set. If the flag Fc has been set, then the CPU reads data of an RGB-CMYK conversion table and performs a cube interpolation process by using the RGB-CMYK conversion table. On the other hand, if the flag Fc has not been set, then the CPU reads data of an RGB-RGB conversion table and performs a triangular pyramid interpolation process by using the RGB-RGB conversion table.

    摘要翻译: 当执行颜色转换处理时,CPU确定是否设置了CMYK转换指示标志Fc。 如果已经设置了标志Fc,则CPU读取RGB-CMYK转换表的数据,并通过使用RGB-CMYK转换表来执行立体插值处理。 另一方面,如果未设置标志Fc,则CPU读取RGB-RGB转换表的数据,并通过使用RGB-RGB转换表执行三角锥插补处理。

    POLYMER REMOVING APPARATUS AND METHOD
    127.
    发明申请
    POLYMER REMOVING APPARATUS AND METHOD 有权
    聚合物去除装置和方法

    公开(公告)号:US20110041874A1

    公开(公告)日:2011-02-24

    申请号:US12857938

    申请日:2010-08-17

    IPC分类号: B08B7/00 B23K26/16

    摘要: A polymer removing apparatus for use in removing polymer annularly adhered to a peripheral portion of a target substrate includes a processing chamber for accommodating the target substrate having the polymer annularly adhered to the peripheral portion thereof; a mounting table for mounting the target substrate thereon; and a laser irradiation unit for irradiating ring-shaped laser light at once to the whole polymer annularly adhered to the target substrate. The polymer removing apparatus further includes an ozone gas supply unit for supplying an ozone gas to the polymer annularly adhered to the target substrate and a gas exhaust unit for exhausting the ozone gas.

    摘要翻译: 用于去除环状地附着到目标基板的周边部分上的聚合物的聚合物去除装置包括:处理室,用于容纳具有环状粘附到其周边部分上的聚合物的目标基板; 用于将目标基板安装在其上的安装台; 以及激光照射单元,其用于将环状激光一次照射到环状地粘附到目标基板的整个聚合物上。 聚合物除去装置还包括臭氧气体供给单元,其用于将臭氧气体供给到环状粘附到目标基板上的聚合物,以及用于排出臭氧气体的排气单元。

    Image-forming method
    128.
    发明授权
    Image-forming method 有权
    成像方法

    公开(公告)号:US07894096B2

    公开(公告)日:2011-02-22

    申请号:US11094426

    申请日:2005-03-31

    IPC分类号: G06K15/02 H04N1/04

    摘要: In an image-forming method, a device reads line data L for one line and determines whether the resolution of the line data L in the main scanning direction is greater than or equal to a threshold th. If the resolution is greater than or equal to the threshold th, then a multiple line process is performed on the line data L to divide this data into two sets of partial line data L1 and L2. The partial line data L1 and L2 are used to form two lines at locations shifted from each other in the sub-scanning direction. However, if the resolution of the line data L is smaller than the threshold th, then a single line process is performed to divide the line data L into two segments Q1 and Q2. The segments Q1 and Q2 of the line data L are used to form a single line at the same location in the sub-scanning direction by printing the segment Q1 in the first main scanning operation and by printing the segment Q2 in the second main scanning operation.

    摘要翻译: 在图像形成方法中,设备读取一行的行数据L,并确定主扫描方向上的行数据L的分辨率是否大于或等于阈值th。 如果分辨率大于或等于阈值th,则对行数据L执行多行处理,以将该数据划分为两组局部行数据L1和L2。 部分线数据L1和L2用于在副扫描方向上彼此偏移的位置处形成两条线。 然而,如果行数据L的分辨率小于阈值th,则执行单行处理以将行数据L划分成两个段Q1和Q2。 线数据L的区段Q1和Q2用于通过在第一主扫描操作中打印区段Q1并且在第二主扫描操作中打印区段Q2在副扫描方向上的相同位置处形成单行 。

    Semiconductor integrated circuit device
    129.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号:US07888769B2

    公开(公告)日:2011-02-15

    申请号:US11756196

    申请日:2007-05-31

    IPC分类号: H01L29/00

    摘要: A semiconductor integrated circuit device according to an embodiment of the present invention includes: a semiconductor substrate; an internal circuit formed on the semiconductor substrate, a first potential and a second potential being supplied to the internal circuit, thereby applying an operating voltage to the internal circuit; a fuse disposed above a semiconductor region of a first conductivity type, and electrically connected to the internal circuit, the semiconductor region being supplied with the second potential and being formed in the semiconductor substrate; and a protective element formed in the semiconductor region of the first conductivity type and protecting the internal circuit in response to positive and negative abnormal voltages generated in a wiring through which the fuse and the internal circuit are connected to each other.

    摘要翻译: 根据本发明实施例的半导体集成电路器件包括:半导体衬底; 形成在所述半导体衬底上的内部电路,向所述内部电路供给第一电位和第二电位,从而向所述内部电路施加工作电压; 保险丝,其设置在第一导电类型的半导体区域上方,并且电连接到所述内部电路,所述半导体区域被提供有所述第二电位并形成在所述半导体衬底中; 以及形成在第一导电类型的半导体区域中的保护元件,并且响应于在熔丝和内部电路彼此连接的布线中产生的正和负异常电压来保护内部电路。

    SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
    130.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE 审中-公开
    半导体存储器件的半导体存储器件和制造方法

    公开(公告)号:US20110031549A1

    公开(公告)日:2011-02-10

    申请号:US12848363

    申请日:2010-08-02

    摘要: A memory includes active areas and an isolation on a semiconductor substrate. A tunnel dielectric film is on active areas. Floating gates include lower gate parts and upper gate parts. An upper gate part has a larger width than that of a lower gate part on a cross section perpendicular to an extension direction of an active area, and is provided on the lower gate part. An intermediate dielectric film is on an upper surface and a side surface of each floating gate. The control gate is on an upper surface and a side surface of each floating gate via the intermediate dielectric film. A height of a lower end of each control gate from a surface of the semiconductor substrate is lower than a height of an interface between the upper gate part and the lower gate part from the surface of the semiconductor substrate.

    摘要翻译: 存储器包括有源区和半导体衬底上的隔离。 隧道电介质膜在有源区域上。 浮动门包括下门部件和上门部件。 上部栅极部分的宽度大于垂直于有源区域的延伸方向的截面的下部栅极部分的宽度,并且设置在下部栅极部分上。 中间电介质膜位于每个浮栅的上表面和侧表面上。 控制栅极通过中间介质膜在每个浮栅的上表面和侧表面上。 从半导体衬底的表面的每个控制栅极的下端的高度低于半导体衬底的表面上的上部栅极部分和下部栅极部分之间的界面的高度。