摘要:
In a displacement measurement apparatus using light interference, a probe light path is spatially separated from a reference light path. Therefore, when a temperature or refractive index distribution by a fluctuation of air or the like, or a mechanical vibration is generated, an optical path difference fluctuates between both of the optical paths, and a measurement error is generated. In the solution, an optical axis of probe light is brought close to that of reference light by a distance which is not influenced by any disturbance, a sample is irradiated with the probe light, a reference surface is irradiated with the reference light, reflected light beams are allowed to interfere with each other, and a displacement of the sample is obtained from the resultant interference light to thereby prevent the measurement error from being generated by the fluctuation of the optical path difference.
摘要:
A scanning probe microscope, capable of performing shape measurement not affected by electrostatic charge distribution of a sample, which: monitors an electrostatic charge state by detecting a change in a flexure or vibrating state of a cantilever due to electrostatic charges in synchronization with scanning during measurement with relative scanning between the probe and the sample, and makes potential adjustment so as to cancel an influence of electrostatic charge distribution, thus preventing damage of the probe or the sample due to discharge and achieving reduction in measurement errors due to electrostatic charge distribution.
摘要:
Optical information and topographic information of the surface of a sample are measured at a nanometer-order resolution and with high reproducibility without damaging a probe and the sample by combining a nanometer-order cylindrical structure with a nanometer-order microstructure to form a plasmon intensifying near-field probe having a nanometer-order optical resolution and by repeating approach/retreat of the probe to/from each measurement point on the sample at a low contact force.
摘要:
The present invention provides a method of using an accurate three-dimensional shape without damaging a sample by making a probe contact the sample only at a measuring point, lifting and retracting the probe when moving to the next measuring point and making the probe approach the sample after moving to the next measuring point, wherein high frequency/minute amplitude cantilever excitation and vibration detection are performed and further horizontal direction excitation or vertical/horizontal double direction excitation are performed to improve the sensitivity of contacting force detection on a slope of steep inclination. The method uses unit for inclining the probe in accordance with the inclination of a measurement target and a structure capable of absorbing or adjusting the orientation of the light detecting the condition of contact between the probe and sample after reflection on the cantilever, which varies a great deal depending on the inclination of the probe.
摘要:
A scanning probe microscope capable of measuring accurate 3-D shape information of a sample with high through-put without damaging a sample. In a method for acquiring an accurate 3-D shape of a sample without imparting damage to the sample by bringing a probe into contact at only a measurement point, once pulling up and retracting the probe when it moves towards a next measurement point, moving the probe towards the next measurement point and allowing it to approach, a deflection signal of the probe and its twist signal area analyzed so that measurement can be made at a minimum necessary retraction distance. Control for minimizing residual oscillation at the time of transverse movement is made so that a measurement frequency can be raised and high speed measurement can be accomplished.
摘要:
Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.
摘要:
The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction, along a given direction crossing the longitudinal direction. This is made up of a poly silicon film containing crystal grains having no grain boundaries crossing the direction of current flow, that is, a band-like polycrystalline silicon film. As a result, it is possible to implement a display device having stable and high quality active elements outside the display region on the insulating substrate.
摘要:
In order to provide a scanning probe microscope capable of measuring with high throughput distribution information relating to local characteristics of a sample concurrently with accurate three-dimensional shape information of the sample without damaging the sample, the speed of approach to each measurement location is increased by controlling the approach of the sample and probe by the provision of a high-sensitivity proximity sensor of the optical type. Also, additional information relating to the distribution of material quality on the sample can be obtained without lowering the scanning speed by: applying a voltage to the probe, or measuring the response on vibrating the probe, or detecting the local optical intensity of the sample surface concurrently with obtaining sample height data and concurrently with the contact period with the sample, whilst ensuring that the probe is not dragged over the sample, by bringing the probe into contact with the sample intermittently.
摘要:
A sample is processed while suppressing film deposition generated during plasma processing and fogging on a measurement window caused by etching to stably detect floating contaminants in a processing chamber with an improved contaminant capture rate. A particle detector is provided in the processing chamber, except for a space defined between electrodes of the plasma generator or a portion above the platform in which the plasma is generated. Laser light for scanning is emitted from the measurement window to the processing chamber, so that the particle detector detects scattered light from contaminants present in the processing chamber. The particle detector detects contaminants based on the detected scattered light during operation of the processing apparatus.
摘要:
A method of processing a semiconductor device is provided with several steps, including the step of generating plasma in a processing chamber to form or process a thin firm on a semiconductor device. The step of scanning, through a window, intensity modulated laser beam, which is modulated at a desired frequency inside the processing chamber where the semiconductor device is being processed. The step of receiving by a sensor through the window a back scattered light being scattered from fine particles suspended in the processing chamber by the scanning laser and detecting the desired frequency component from a signal outputted from the sensor. From the detected frequency component information relating to quantity, size, and distribution of the fine particles illuminated by the laser beam inside the processing chamber is obtained. This information is then outputted.