公开(公告)号：US06556473B2

公开(公告)日：2003-04-29

申请号：US09912321

申请日：2001-07-26

申请人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

发明人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

IPC分类号： G11C1100

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3231 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

摘要翻译： 提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一 插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属 纳米颗粒膜。

公开(公告)号：US5698880A

公开(公告)日：1997-12-16

申请号：US539380

申请日：1995-10-05

申请人： Shigeki Takahashi ,  Mitsuhiro Kataoka ,  Tsuyoshi Yamamoto ,  Yuuichi Takeuchi ,  Norihito Tokura

发明人： Shigeki Takahashi ,  Mitsuhiro Kataoka ,  Tsuyoshi Yamamoto ,  Yuuichi Takeuchi ,  Norihito Tokura

IPC分类号： H01L21/336 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： Y02E10/50

摘要： A manufacturing method for a semiconductor device, which can attain a low ion voltage in a manufacturing method for a semiconductor device involving a process for forming a groove by etching prior to selective oxidation, selectively oxidizing a region including the groove and thereby making a channel part of the groove, is disclosed. A groove part is thermally oxidized by using a silicon nitride film as a mask. A LOCOS oxide film is formed by this thermal oxidation, and concurrently a U-groove is formed on the surface of an n.sup.- -type epitaxial layer eroded by the LOCOS oxide film, and the shape of the U-groove is fixed. A curve part formed during a chemical dry etching process remains as a curve part on the side surface of the U-groove. Then, an n.sup.+ -type source layer is formed by means of thermal diffusion to a junction thickness of 0.5 to 1 .mu.m, and a channel is set up as well. The junction depth obtained by this thermal diffusion is set up more deeply than the curve part which is formed during the above etching and remains on the side surface of the U-groove after the above selective thermal oxidation.

摘要翻译： 一种用于半导体器件的制造方法的半导体器件的制造方法，其包括在选择性氧化之前通过蚀刻形成沟槽的工艺的半导体器件的制造方法，选择性地氧化包括沟槽的区域，从而形成沟道部分 的凹槽。 通过使用氮化硅膜作为掩模将槽部热氧化。 通过该热氧化形成LOCOS氧化物膜，并且在由LOCOS氧化物膜侵蚀的n型外延层的表面上形成U形槽，并且U形槽的形状被固定。 在化学干蚀刻过程中形成的曲线部分在U形槽的侧表面上保持为曲线部分。 然后，通过热扩散形成0.5±1μm的结合厚度的n +型源极层，并且还设置沟道。 通过该热扩散获得的结深度比在上述蚀刻期间形成的曲线部分更深地设置，并且在上述选择性热氧化之后保留在U形槽的侧表面上。

公开(公告)号：US5058831A

公开(公告)日：1991-10-22

申请号：US460493

申请日：1990-01-03

申请人： Shigeki Takahashi

发明人： Shigeki Takahashi

IPC分类号： A62B1/00 ,  A62B5/00 ,  B64D17/78

CPC分类号： A62B5/00 ,  B64D17/78

摘要： The present invention discloses an emergency escape unit to be used in case of an emergency such as a fire, an earthquake or the like, such that the user safely escapes from a high building with the use of this escape unit. In the emergency escape unit of the present invention, a light-weight gas such as helium, air or the like, filled in a bomb may be quickly released into a sack-like canopy, causing the canopy to be expanded in the form of an umbrella, so that the air resistance during descent is quickly increased, enabling the user to fall slowly. When helium is used as the light-weight gas to be released into the sack-like canopy, provision is made such that buoyancy is generated.

摘要翻译： 本发明公开了一种在诸如火灾，地震等的紧急情况下使用的紧急逃生单元，使得用户使用该逃逸单元从高层建筑物安全地逸出。 在本发明的紧急逃逸装置中，填充有炸弹的诸如氦气，空气等的轻质气体可以被快速地释放到袋状盖子中，使得罩盖以 伞，使得下降期间的空气阻力快速增加，使使用者能够缓慢下降。 当使用氦作为释放到袋状天棚中的轻质气体时，提供浮力来产生浮力。

公开(公告)号：US09082961B2

公开(公告)日：2015-07-14

申请号：US13226960

申请日：2011-09-07

申请人： Yuichi Ohsawa ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

发明人： Yuichi Ohsawa ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

IPC分类号： H01L43/12 ,  H01L29/82

CPC分类号： H01L43/12 ,  H01L29/82

摘要： According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.

摘要翻译： 根据一个实施例，一种制造多层膜的方法，该方法包括：形成第一层，在第一层上形成第二层，以及将第一层和第二层之一的晶体信息转录到第一层中的另一层 并且通过对第二层执行GCIB照射来产生第二层。

公开(公告)号：US20150188034A1

公开(公告)日：2015-07-02

申请号：US14578671

申请日：2014-12-22

申请人： Shigeki Takahashi ,  Yoshiaki Sonobe ,  Koki Takanashi

发明人： Shigeki Takahashi ,  Yoshiaki Sonobe ,  Koki Takanashi

IPC分类号： H01L43/08 ,  H01L43/10

CPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A magnetic tunnel junction device includes: a first magnetic layer that has an easy axis vertical to a surface; a non-magnetic layer on the first magnetic layer; and a second magnetic layer that has an easy axis vertical to a surface on the non-magnetic layer, and an interface layer formed of a Heussler alloy between the non-magnetic layer and at least one of the first and second magnetic layers. The at least one of the first and second magnetic layers is formed of MnGa. A lattice constant of the interface layer parallel to a major surface thereof in a bulk state thereof is between a lattice constant of the non-magnetic layer parallel to a major surface thereof in a bulk state thereof and a lattice constant of the at least one of the first and second magnetic layers parallel to a major surface thereof in a bulk state thereof.

摘要翻译： 磁性隧道结装置包括：具有垂直于表面的容易轴的第一磁性层; 第一磁性层上的非磁性层; 以及具有与所述非磁性层上的表面垂直的容易轴的第二磁性层以及在所述非磁性层与所述第一和第二磁性层中的至少一个之间由Heussler合金形成的界面层。 第一和第二磁性层中的至少一个由MnGa形成。 在其主体状态下平行于其主表面的界面层的晶格常数在其主体状态下平行于其主表面的非磁性层的晶格常数和至少一个的晶格常数之间 第一和第二磁性层在其主体状态下平行于其主表面。

公开(公告)号：US08986558B2

公开(公告)日：2015-03-24

申请号：US13061252

申请日：2009-08-27

申请人： Susumu Noda ,  Shigeki Takahashi

发明人： Susumu Noda ,  Shigeki Takahashi

IPC分类号： H01L21/3065 ,  G02B1/00 ,  B82Y20/00

CPC分类号： G02B1/005 ,  B82Y20/00 ,  H01J2237/3327 ,  H01L21/3065

摘要： A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.

摘要翻译： 提供了能够以高纵横比和高均匀性进行倾斜蚀刻的等离子体蚀刻方法。 在等离子体蚀刻方法中，通过以下处理以高纵横比来蚀刻基体：具有从基体的法线垂直的方向贯通的离子引入孔的电场控制装置是 放置在该基体的表面上或上方。 在其上放置电场控制的基体的表面上产生等离子体。 在等离子体和基体之间形成电位差，以将等离子体中的离子吸引到基体。

公开(公告)号：US08854033B2

公开(公告)日：2014-10-07

申请号：US13150764

申请日：2011-06-01

申请人： Satoshi Shiraki ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

发明人： Satoshi Shiraki ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

IPC分类号： G01R1/20

CPC分类号： H01L27/1203 ,  G01R19/0092 ,  H01L21/76283 ,  H01L23/585 ,  H01L29/0696 ,  H01L29/405 ,  H01L29/7394 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

摘要翻译： 具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛 第一个岛屿。 横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。 主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。 通过检测流过感测单元的第二电流来检测第一电流。

公开(公告)号：US08710605B2

公开(公告)日：2014-04-29

申请号：US13231894

申请日：2011-09-13

申请人： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

发明人： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

IPC分类号： H01L29/72

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

摘要翻译： 根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。 磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

公开(公告)号：US20140048911A1

公开(公告)日：2014-02-20

申请号：US14113419

申请日：2012-05-10

申请人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

发明人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

IPC分类号： H01L29/06

CPC分类号： H01L29/063 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/861

摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.

摘要翻译： 横向半导体器件包括半导体层，绝缘层和电阻场板。 半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。 绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。 电阻场板形成在绝缘层的表面上。 在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。 电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

公开(公告)号：US20130322816A1

公开(公告)日：2013-12-05

申请号：US14000084

申请日：2012-02-01

申请人： Shigeki Takahashi ,  Shigeru Nakamura ,  Masashige Ishizaka ,  Nobuhide Fujioka

发明人： Shigeki Takahashi ,  Shigeru Nakamura ,  Masashige Ishizaka ,  Nobuhide Fujioka

IPC分类号： G02B6/26

CPC分类号： G02B6/1228 ,  G02B6/262 ,  G02B6/305

摘要： In order to provide a spot size converter and a method for making the same which enable the optical connection with low loss and are able to reduce the excess loss for the position misalignment in mounting, a spot size converter according to an exemplary aspect of the present invention includes: a substrate on which an optical waveguide including a first core is laminated and which includes a notch; a core reducing part which is formed so that a cross-section area of the first core may gradually decrease toward an end part of the first core in the direction of light propagation; a second core which surrounds the core reducing part and is made of a material whose refractive index is smaller than that of the first core; a peripheral clad which surrounds the second core and is made of a material whose refractive index is smaller than that of the second core; and a lower clad which is formed in a lower part of the second core and includes the peripheral clad; wherein the lower clad is formed in the notch.

摘要翻译： 为了提供一种光斑尺寸转换器及其制造方法，能够实现低损耗的光连接并且能够减少安装时位置偏差的过多损耗，根据本发明的示例性方面的光斑尺寸转换器 本发明包括：基板，其上层叠包括第一芯的光波导，并且包括凹口; 芯部还原部，其形成为使得第一芯的截面积在光传播方向上朝向第一芯的端部逐渐减小; 围绕所述纤芯缩径部的第二纤芯，由折射率小于所述第一纤芯的材料制成; 围绕第二芯的外围包层，由折射率小于第二芯的材料制成; 以及形成在所述第二芯体的下部并且包括所述周边包层的下部包层; 其中所述下包层形成在所述凹口中。