摘要:
A semiconductor chip (1) comprises a p-doped region (I) having a cladding layer (18) and a contact layer (21) between which a first interlayer (19) and a second interlayer (20) are arranged. A concentration of a first material component (B) within the first and the second interlayer (19, 20) changes in such a way that the band gap varies in a range lying between the band gap of the cladding layer (18) and the band gap of the contact layer (21). A method for producing a semiconductor chip of this type is also disclosed.
摘要:
A boring and/or percussion hammer comprises an electrodynamic linear drive and a pneumatically damped percussion mechanism which is provided with a drive piston driven by the linear drive during the reciprocating movement thereof, an impact piston and a pneumatic spring arranged between the drive and impact pistons. An air-supply device comprises a pumping element, which is linearly forth and back movable for generating airflow. The pumping element is connected to the drive piston in such a way that the movement thereof is transmitted to said pumping element, thereby the cooling air is transported by an air channel for cooling heat generated elements.
摘要:
A safety coupling in a percussion hammer and/or drill hammer, comprising a basic sleeve, a driven toothed wheel that is rotatably mounted on the basic sleeve and can be driven by a drive unit, a closing ring which is fastened to the basic sleeve, and a locking ring located between the driven toothed wheel and the closing ring. Said locking ring is fixed in a torsion-proof manner relative to the closing ring while being movable relative to the closing ring in an axial direction, counter to the effect of a spring mechanism. The locking ring is axially displaced while the driven toothed wheel remains in the axial position thereof when a threshold torque is exceeded.
摘要:
An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要:
A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.
摘要:
A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.
摘要:
An optically pumped vertically emitting semiconductor laser having a highly reflective reflector layer (10), and a radiation-emitting active layer sequence (14) arranged on the reflector layer, in which, during operation, the reflector layer (10), together with an external mirror (20), forms a laser resonator. A heat sink (12), transparent to the emitted radiations is arranged within the laser resonator (10, 20) and in thermal contact with the active layer sequence (14), said heat sink being formed from a material having a higher thermal conductivity than the materials of the active layer sequence (14).
摘要:
An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).
摘要:
A method is described for determining a rotation speed and a rotation direction of a component (2), in particular a transmission output shaft, with a sensor device (1). In the sensor device (1), as a function of a rotation speed and direction of the component (2), a first sensor signal and a second sensor signal are generated, which are phase shifted relative to one another and each of which, on reaching an upper switching threshold or a lower switching threshold in the sensor device (1), triggers a switching signal. When there are alternating, consecutive switching signals of the two sensor signals, the sensor device (1) emits a pulse signal as a function of which a variation of a sensor signal is generated, which is used to determine a rotation speed of the component (2). After a rotation direction reversal of the component (2) a pulse signal of the sensor device (1) is only generated after sensing a rotation movement of the component (2), this rotation movement of the component (2) being sensed when, in alternation, a switching signal of one sensor signal is followed by a switching signal of the other sensor signal.
摘要:
A semiconductor laser device, having an epitaxial semiconductor body (40) with a waveguiding layer (22), which contains an active radiation-generating layer (20), a laser-active emitter region (12), disposed in the epitaxial semiconductor body (40) and having a primary direction (30), which essentially corresponds to the exit direction of the laser radiation from the emitter region, and an amplifier region (14), adjoining the emitter region (12) in the semiconductor body (40) in the primary direction (30), for amplifying the laser radiation. The emitter region (12) and the amplifier region (14) form active regions in the semiconductor material. The waveguiding layer (22) is removed in some regions of the semiconductor body (40) outside the active regions (12, 14), in such a way that flanks (18; 32; 36) of the semiconductor body (40) that are produced by the removal form a shallow angle τ with the plane in which lies the waveguiding layer.