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    INDUCTION ACTUATED CONTAINER
    121.
    发明申请
    INDUCTION ACTUATED CONTAINER 有权
    感应启动容器

    公开(公告)号：US20110017735A1

    公开(公告)日：2011-01-27

    申请号：US12924610

    申请日：2010-09-29

    Applicant: Xin Wang ,  Jiangqun Chen ,  ShiPing Wang

    Inventor： Xin Wang ,  Jiangqun Chen ,  ShiPing Wang

    IPC: B65D55/00 ,  H02P3/12

    CPC classification number: B65F1/1607 ,  B65F1/1638 ,  Y10T29/49815

    Abstract: An induction actuated container cover includes a control housing having a cover opening, a cover panel pivotally mounted to the control housing to pivotally move between a closed position that the cover panel covers at the cover opening and an opened position that the cover panel exposes the cover opening, and an automatic driving arrangement including a sensor mounted at the control housing for detecting a target movement of a user and an actuation unit supported in the control housing to operatively link with the sensor, wherein the actuation unit is actuated to generate a decelerating and torque enhancing force to move the cover panel between the opened and closed position in a hydraulic manner.

    Abstract translation: 感应致动的容器盖包括具有盖开口的控制壳体，枢转地安装到控制壳体的盖板，以在盖板盖盖在盖开口处的关闭位置和盖板暴露盖子的打开位置之间枢转地运动 开启和自动驱动装置，其包括安装在所述控制壳体处的传感器，用于检测用户的目标运动，以及支撑在所述控制壳体中以与所述传感器可操作地连接的致动单元，其中致动单元被致动以产生减速和 扭矩增强力以水力方式在打开和关闭位置之间移动盖板。

    Method and apparatus for supporting multiple trust zones in a digital rights management system
    122.
    发明授权
    Method and apparatus for supporting multiple trust zones in a digital rights management system 有权
    在数字版权管理系统中支持多个信任区域的方法和装置

    公开(公告)号：US07853531B2

    公开(公告)日：2010-12-14

    申请号：US10162210

    申请日：2002-06-05

    Applicant: Guillermo Lao ,  Xin Wang ,  Thanh Ta ,  Joseph Zhung Yee Fung

    Inventor： Guillermo Lao ,  Xin Wang ,  Thanh Ta ,  Joseph Zhung Yee Fung

    IPC: G06F21/00

    CPC classification number: G06F21/10 ,  G06Q20/401

    Abstract: Digital rights management method and system for items having usage rights. A first activation device defines a first trust zone. A first license device associated with the first trust zone generates an open license having usage rights associated with a first item. A second activation device defines a second trust zone and is adapted to issue a software package that enforces usage rights. A user device associated with the second trust zone is adapted to receive the software package from the second activation device, to receive the open license associated with the first item, and to use the first item in accordance with the open license. In addition, a method is provided for enforcing a license granting usage rights associated with a protected item, and for classifying a license, the license being an open license or a closed license.

    Abstract translation: 具有使用权的物品的数字版权管理方法和系统。 第一激活装置定义第一信任区。 与第一信任区域相关联的第一许可设备生成具有与第一项目相关联的使用权限的开放许可证。 第二激活装置定义第二信任区并适于发出强制使用权的软件包。 与第二信任区相关联的用户设备适于从第二激活设备接收软件包，以接收与第一项相关联的开放许可，并且根据开放许可使用第一项。 另外，提供了一种用于执行许可授予与受保护项目相关联的使用权限的方法，并且对许可证进行分类，许可证是开放许可证或封闭许可证。

    System and program for managing devices in a network
    123.
    发明授权
    System and program for managing devices in a network 失效
    用于管理网络中的设备的系统和程序

    公开(公告)号：US07849179B2

    公开(公告)日：2010-12-07

    申请号：US12111116

    申请日：2008-04-28

    Applicant: Hai-Yann Hwang ,  Karsten Jancke ,  Thorsten Schaefer ,  Sergio P. Bonilla ,  Xin Wang ,  Cindy Zhou

    Inventor： Hai-Yann Hwang ,  Karsten Jancke ,  Thorsten Schaefer ,  Sergio P. Bonilla ,  Xin Wang ,  Cindy Zhou

    IPC: G06F15/173

    CPC classification number: H04L41/0213

    Abstract: Provided are a system, and program for managing devices in a network. A command of a first type to perform device management operations with respect to at least one device in the network is received, wherein the received command is capable of being directed to at least one of a plurality of devices in the network. A determination is made from a first mapping of a network address of the device to which the received command is directed. A determination is made from a second mapping of at least one command of a second type associated with the received command of the first type, wherein the mapping indicates a mapping of at least one parameter included in the received command of the first type to at least one parameter in the associated command of the second type. The determined command of the second type is generated to include as parameters the at least one parameter from the command of the first type indicated in the second mapping and the generated command of the second type is transmitted to the determined network address.

    Abstract translation: 提供了一种用于管理网络中的设备的系统和程序。 接收关于网络中的至少一个设备执行设备管理操作的第一类型的命令，其中所接收的命令能够被引导到网络中的多个设备中的至少一个。 从所接收的命令所针对的设备的网络地址的第一映射确定。 从与所接收的第一类型的命令相关联的第二类型的至少一个命令的第二映射进行确定，其中映射指示包括在所接收的第一类型的命令中的至少一个参数的映射至少为 第二种类型的关联命令中的一个参数。 生成确定的第二类型的命令以将来自第二映射中指示的第一类型的命令的至少一个参数作为参数包含，并且将生成的第二类型的命令发送到所确定的网络地址。

    Method of calculating a time period to wait for missing data packets
    125.
    发明授权
    Method of calculating a time period to wait for missing data packets 有权
    计算等待丢失数据包的时间段的方法

    公开(公告)号：US07792026B2

    公开(公告)日：2010-09-07

    申请号：US11356022

    申请日：2006-02-17

    Applicant: Xin Wang ,  Tomas S. Yang ,  Yang Yang ,  Lily H. Zhu

    Inventor： Xin Wang ,  Tomas S. Yang ,  Yang Yang ,  Lily H. Zhu

    IPC: G06F11/30

    CPC classification number: H04L1/1848 ,  H04L1/1809 ,  H04L1/1841

    Abstract: A method of receiving data packets. In the method of receiving data packets, a determination is made as to whether a received data packet is received out of an expected order. If the determining step determines a received packet is out of the expected order, a time period is calculated to wait for one or more missing data packets based at least in part on an expected time of receiving the one or more missing data packets.

    Abstract translation: 一种接收数据包的方法。 在接收数据分组的方法中，确定是否从预期顺序接收到接收的数据分组。 如果确定步骤确定接收到的分组超出预期顺序，则至少部分地基于接收到一个或多个丢失数据分组的预期时间来计算时间段以等待一个或多个丢失数据分组。

    Method for fabricating semiconductor device capable of adjusting the thickness of gate oxide layer
    126.
    发明授权
    Method for fabricating semiconductor device capable of adjusting the thickness of gate oxide layer 有权
    制造半导体器件的方法，该半导体器件能够调节栅极氧化物层的厚度

    公开(公告)号：US07759238B2

    公开(公告)日：2010-07-20

    申请号：US12187370

    申请日：2008-08-06

    Applicant: Tai Chiang Chen ,  Xin Wang

    Inventor： Tai Chiang Chen ,  Xin Wang

    IPC: H01L21/3205 ,  H01L21/4763

    CPC classification number: H01L21/31662 ,  H01L21/02233 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/31658 ,  H01L29/51 ,  Y10S438/981

    Abstract: The present invention provides a method for fabricating semiconductor device, which is capable of adjusting a gate oxide layer thickness, including: providing a semiconductor substrate; growing a first oxide layer on a surface of the semiconductor substrate; patterning the first oxide layer to expose the first oxide layer corresponding to a gate to be formed; removing the exposed first oxide layer; immersing the substrate into deionized water to grow a second oxide layer; forming a polysilicon layer on the surfaces of the first oxide layer and the second oxide layer; and etching the polysilicon layer to form a gate. The method for fabricating semiconductor device according to the present invention, which is capable of adjusting the thickness of gate oxide layer, can control the thickness of gate oxide layer precisely to satisfy the requirement for different threshold voltages.

    Abstract translation: 本发明提供一种能够调整栅极氧化层厚度的半导体器件的制造方法，包括：提供半导体衬底; 在半导体衬底的表面上生长第一氧化物层; 图案化第一氧化物层以暴露与要形成的栅极对应的第一氧化物层; 去除暴露的第一氧化物层; 将基底浸入去离子水中以生长第二氧化物层; 在所述第一氧化物层和所述第二氧化物层的表面上形成多晶硅层; 并蚀刻多晶硅层以形成栅极。 根据本发明的半导体器件的制造方法，其能够调整栅氧化层的厚度，能够精确地控制栅氧化层的厚度，以满足不同阈值电压的要求。

    Trench MOSFET and method of manufacture utilizing four masks
    128.
    发明授权
    Trench MOSFET and method of manufacture utilizing four masks 失效
    沟槽MOSFET和利用四个掩模的制造方法

    公开(公告)号：US07687352B2

    公开(公告)日：2010-03-30

    申请号：US11866350

    申请日：2007-10-02

    Applicant: Shih Tzung Su ,  Jun Zeng ,  Poi Sun ,  Kao Way Tu ,  Tai Chiang Chen ,  Long Lv ,  Xin Wang

    Inventor： Shih Tzung Su ,  Jun Zeng ,  Poi Sun ,  Kao Way Tu ,  Tai Chiang Chen ,  Long Lv ,  Xin Wang

    IPC: H01L21/336

    CPC classification number: H01L29/7811 ,  H01L29/0661 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

    Abstract: In accordance with the invention, a trench MOSFET semiconductor device is manufactured in accordance with a process comprising the steps of: providing a heavily doped N+ silicon substrate; utilizing a first mask to define openings for the trench gate and termination; utilizing a second mask as a source mask with openings determining the size and shape of a diffused source junction depth; utilizing a third mask as a contact mask to define contact hole openings; and utilizing a fourth mask as a metal mask, whereby only the first, second, third and fourth masks are utilized in the manufacture of the trench MOSFET semiconductor device.

    Abstract translation: 根据本发明，根据包括以下步骤的方法制造沟槽MOSFET半导体器件：提供重掺杂的N +硅衬底; 利用第一掩模来限定沟槽栅极和终端的开口; 利用第二掩模作为源掩模，其具有确定扩散源结深度的大小和形状的开口; 利用第三掩模作为接触掩模来限定接触孔开口; 并且利用第四掩模作为金属掩模，由此在制造沟槽MOSFET半导体器件中仅利用第一，第二，第三和第四掩模。

    Method and apparatus for computing dummy feature density for chemical-mechanical polishing
    130.
    发明授权
    Method and apparatus for computing dummy feature density for chemical-mechanical polishing 有权
    用于计算化学机械抛光的虚拟特征密度的方法和装置

    公开(公告)号：US07594213B2

    公开(公告)日：2009-09-22

    申请号：US10997396

    申请日：2004-11-24

    Applicant: Xin Wang ,  Charles C. Chiang ,  Jamil Kawa

    Inventor： Xin Wang ,  Charles C. Chiang ,  Jamil Kawa

    IPC: G06F17/50

    CPC classification number: G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

    Abstract: One embodiment of the present invention provides a system that computes dummy feature density for a CMP (Chemical-Mechanical Polishing) process. Note that the dummy feature density is used to add dummy features to a layout to reduce the post-CMP topography variation. During operation, the system discretizes a layout of an integrated circuit into a plurality of panels. Next, the system computes a feature density and a slack density for the plurality of panels. The system then computes a dummy feature density for the plurality of panels by, iteratively, (a) calculating an effective feature density for the plurality of panels using the feature density and a function that models the CMP process, (b) calculating a filling amount for a set of panels in the plurality of panels using a target feature density, the effective feature density, and the slack density, and (c) updating the feature density, the slack density, and the dummy feature density for the set of panels using the filling amount. In one embodiment of the present invention, the iterative process is guided by a variance-minimizing heuristic to efficiently select the set of panels and assign/remove dummy density to the set of panels to decrease the effective feature density variation.

    Abstract translation: 本发明的一个实施例提供了一种计算CMP（化学机械抛光）工艺的虚拟特征密度的系统。 请注意，虚拟特征密度用于向布局添加虚拟特征以减少CMP后的拓扑变化。 在操作期间，系统将集成电路的布局离散到多个面板中。 接下来，系统计算多个面板的特征密度和松弛密度。 然后，系统通过迭代地计算多个面板的虚拟特征密度，（a）使用特征密度计算多个面板的有效特征密度，以及对CMP过程建模的功能，（b）计算填充量 对于使用目标特征密度，有效特征密度和松弛密度的多个面板中的一组面板，以及（c）更新该组面板的特征密度，松弛密度和虚拟特征密度，使用 填充量。 在本发明的一个实施例中，迭代过程由方差最小化启发式引导，以有效地选择面板集合并且将虚空密度分配/去除到该组面板以减小有效特征密度变化。

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