公开(公告)号：US20250089314A1

公开(公告)日：2025-03-13

申请号：US18588089

申请日：2024-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon HWANG ,  Hyojin KIM ,  Byungho MOON ,  Myungil KANG ,  Doyoung CHOI

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A three-dimensional semiconductor device includes a first active region on a substrate, including a first active region on a substrate, including a lower channel pattern and lower source/drain patterns connected to the lower channel pattern, the lower channel pattern including a plurality of lower semiconductor patterns stacked and spaced apart from each other in a first direction that is perpendicular to an upper surface of the substrate, and the lower semiconductor patterns including a lowermost first semiconductor pattern, a second active region stacked on the first active region, including an upper channel pattern and an upper source/drain pattern connected to the upper channel pattern, a lower gate electrode on the lower channel pattern, and a lower insulating pattern under the first semiconductor pattern, the first semiconductor pattern spaced apart from the lower insulating pattern in the first direction. The lower gate electrode includes a first portion adjacent to a first sidewall of the lower insulating pattern and extending in the first direction from an upper surface to a bottom surface of the lower gate electrode, a second portion adjacent to a second sidewall of the lower insulating pattern and extending in the first direction from the upper surface to the bottom surface of the lower gate electrode, the second sidewall facing the first sidewall in a second direction which is perpendicular to the first direction, and a third portion in contact with a bottom surface of the lower insulating pattern and extending from the first portion to the second portion in the second direction.

公开(公告)号：US20250089299A1

公开(公告)日：2025-03-13

申请号：US18960679

申请日：2024-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junbeom Park ,  Sangsu Kim ,  Junggil Yang

IPC: H01L29/423 ,  H01L29/417

Abstract: A semiconductor device includes a first source/drain structure having a first length in a horizontal direction, as viewed in a planar cross-sectional view, the horizontal direction being perpendicular to a vertical direction, a second source/drain structure having a second length in the horizontal direction, as viewed in the planar cross-sectional view, the second length being less than the first length, channels extending between the first source/drain structure and the second source/drain structure, the channels being spaced apart from each other in the vertical direction, at least one sacrificial pattern between adjacent ones of the channels, and a trench penetrating the channels and the at least one sacrificial pattern.

公开(公告)号：US20250089270A1

公开(公告)日：2025-03-13

申请号：US18540222

申请日：2023-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Haeryong KIM ,  Hajun SUNG ,  Changseung LEE

IPC: H10B63/00 ,  H10B63/10

Abstract: Provided are a memory device, a manufacturing method thereof, and an electronic apparatus including the memory device. The memory device may include a plurality of first conductors arranged apart from each other and perpendicular to a substrate, a second conductor extending perpendicular to the substrate, a chalcogenide layer extending perpendicular to the substrate between the plurality of first conductors and the second conductor, and a plurality of first diffusion barrier layers selectively arranged only on the plurality of first conductors between the plurality of first conductors and the chalcogenide layer. The plurality of first diffusion barrier layers each may include a carbon-based material.

公开(公告)号：US20250089261A1

公开(公告)日：2025-03-13

申请号：US18739636

申请日：2024-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sea Hoon LEE ,  Jun Hee LIM ,  Jun Seok OH ,  Seong Pil CHANG

IPC: H10B43/40 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A transistor that may provide improved durability and reliability is disclosed. The transistor includes a substrate including an active region, an element isolation film in the substrate that defines the active region, a first impurity region on a lower surface of the element isolation film, a second impurity region in the substrate, a gate electrode on the substrate and extending in a first direction, a source/drain area on at least one side of the gate electrode, a first source/drain contact group on the source/drain area, and a second source/drain contact group on the source/drain area and spaced apart from the first source/drain contact group in the first direction, wherein the second impurity region is between the first source/drain contact group and the second source/drain contact group.

公开(公告)号：US20250089188A1

公开(公告)日：2025-03-13

申请号：US18810701

申请日：2024-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wookjin LEE ,  Hyun JI

IPC: H05K5/02 ,  G06F1/18 ,  H01L25/075 ,  H05K5/00

Abstract: A display apparatus including a display module, a cabinet to support the display module, the cabinet including an opening, an adjustment part arrangeable in the display module such that while the adjustment part is arranged in the display module, the adjustment part is movable with respect to the cabinet, a support member, moveable within the cabinet, and configured to support the adjustment part such that the adjustment part is moveable while supported on the support member, a rotation member coupleable to the support member and while coupled to the support member, the rotation member is configured to be rotatable such that the support member, the adjustment part, and the display module are moved based on a rotation of the rotation member. The rotation member is accessible through the opening of the cabinet to allow the rotation of the rotation member while the display module is supported on the cabinet.

公开(公告)号：US20250089166A1

公开(公告)日：2025-03-13

申请号：US18774603

申请日：2024-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keonwoo KIM ,  Moonyoung KIM ,  Jinhyung LEE ,  Junyoung KO ,  Kangmoon SEO

IPC: H05K1/11 ,  H05K1/09

Abstract: A hybrid printed circuit board includes: an insulating substrate; a printed circuit board disposed on an upper surface of the insulating substrate and including at least one through hole configured to accommodate a surface mount device; and an adhesive member comprising an adhesive material provided between the insulating substrate and the printed circuit board.

公开(公告)号：US20250089133A1

公开(公告)日：2025-03-13

申请号：US18962505

申请日：2024-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjoon CHOO ,  Heejun KANG ,  Dongwook KIM ,  Jaehee SHIN ,  Dongoh KANG ,  Yongwook KIM ,  Jaejin KIM ,  Kanghoon KIM ,  Sojeong YU ,  Jonghun HA

IPC: H05B6/12 ,  A47J36/32 ,  H02J50/10

Abstract: A method, performed by a wireless power transmission apparatus, of performing a cooking operation, includes: detecting a cooking appliance, establishing a communication connection with the detected cooking appliance, obtaining operation history information corresponding to the cooking appliance, and transmitting power to the cooking appliance based on the operation history information.

公开(公告)号：US20250089116A1

公开(公告)日：2025-03-13

申请号：US18727558

申请日：2023-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong WANG ,  Lixiang XU ,  Weiwei WANG

IPC: H04W76/19 ,  H04W4/06 ,  H04W76/20 ,  H04W76/30

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. The present disclosure relates to a method, a base station, an electronic apparatus and a storage medium for supporting multicast transmission. A method performed by a Centralized Unit (CU) of a second base station comprising the CU and at least one Distributed Unit (DU), the method comprising: receiving a Radio Resource Control (RRC) resume request message comprising a RRC resume reason from a User Equipment (UE), the RRC resume reason being set for a purpose of transmission of a MBS; as a response to the RRC resume request message, sending configuration information of a Multimedia Broadcast Multicast Service (MBS) Radio Bearer (MRB) and/or suspension indication information to the UE.

公开(公告)号：US20250089035A1

公开(公告)日：2025-03-13

申请号：US18921943

申请日：2024-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juyeong LEE ,  Heedon Gha

IPC: H04W72/0457 ,  H04L1/1812 ,  H04L5/14 ,  H04W72/0453 ,  H04W72/1273 ,  H04W72/231

Abstract: A method of a terminal, includes: receiving first DL BWP configuration information comprising an ID of a first DL BWP; receiving first UL BWP configuration information comprising an ID of a first UL BWP; receiving, from the base station, second DL BWP configuration information comprising an ID of a second DL BWP and an ID of a second UL BWP; and recognizing, through the ID of the second UL BWP, that the second DL BWP configuration information is information for DL-UL configuration of the terminal, wherein, in a first slot, when the first DL BWP and the first UL BWP are temporally separated from each other, DL communication and UL communication are not simultaneously performed, by the terminal, with the base station, and wherein, in a second slot, the DL communication and the UL communication are simultaneously performed with a base station based on the second DL BWP configuration information.

公开(公告)号：US20250088924A1

公开(公告)日：2025-03-13

申请号：US18941757

申请日：2024-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoondong NOH ,  Youngwoo KWAK

IPC: H04W36/06 ,  H04B7/06 ,  H04L5/00 ,  H04W72/044

Abstract: The present disclosure relates to a communication method for converging IoT technology with 5G communication systems for supporting higher data transmission rates than beyond 4G systems, and to a system therefor. The present disclosure may be applied to intelligent services (for example, smart homes, smart buildings, smart cities, smart cars or connected cars, healthcare, digital education, retail business, security and safety-related services, etc.) on the basis of 5G communication technology and IoT-related technology. The present invention characterizes in a method for a terminal of a wireless communication system, wherein the method comprises the steps of: receiving channel or reference signal configuration information including beam-related configuration information via higher layer signalling; transmitting and receiving the channel or a reference signal to and from a base station on the basis of the beam-related configuration information; receiving beam change information for the channel or reference signal; and transmitting and receiving the channel or reference signal of a plurality of component carriers to and from the base station on the basis of the beam change information, wherein the beam-related configuration information and the beam change information include transmission configuration indicator (TCI) state information of the channel or reference signal.