公开(公告)号：US08436708B2

公开(公告)日：2013-05-07

申请号：US12810351

申请日：2008-12-25

申请人： Takeshi Tachibana ,  Satoru Tanaka

发明人： Takeshi Tachibana ,  Satoru Tanaka

IPC分类号： H01F5/00 ,  H01F27/28

CPC分类号： H01F1/344 ,  C04B35/265 ,  C04B35/6262 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3293 ,  C04B2235/5409 ,  H01F17/0013 ,  H01F17/04 ,  H01F41/046

摘要： A multilayer inductor comprising a coil embedded in a magnetic portion, and a magnetic gap formed by a non-magnetic portion in part of a magnetic path, the magnetic portion being made of Ni ferrite, whose relative temperature coefficient αμir of initial permeability at a frequency of 1 MHz is more than +10 ppm/° C. and +40 ppm/° C. or less between −40° C. and +80° C., the non-magnetic portion being made of Zn ferrite containing more Zn than in the magnetic portion and having a Curie temperature Tc of −50° C. or lower, and the Zn content changing continuously in boundary regions between the non-magnetic portion and the magnetic portion, whereby the thickness of the magnetic gap changes with the temperature.

摘要翻译： 一种包括嵌入在磁性部分中的线圈的多层电感器和由磁路部分中的非磁性部分形成的磁隙，所述磁性部分由Ni铁氧体制成，所述磁性部分的初始磁导率的相对温度系数alphamuir为频率 1 MHz的温度在-40°C至+ 80°C之间超过+ 10 ppm /°C和+ 40 ppm /°C或更低，非磁性部分由含有更多Zn的Zn铁氧体组成 在磁性部分中具有-50℃或更低的居里温度Tc，并且Zn含量在非磁性部分和磁性部分之间的边界区域中连续变化，由此磁隙的厚度随温度变化 。

公开(公告)号：US08375676B2

公开(公告)日：2013-02-19

申请号：US12950135

申请日：2010-11-19

申请人： Takeo Takakura ,  Satoru Tanaka ,  Yumi Tanaka ,  Toshiaki Kato ,  Naoyuki Kita ,  Nobuyuki Kawabata

发明人： Takeo Takakura ,  Satoru Tanaka ,  Yumi Tanaka ,  Toshiaki Kato ,  Naoyuki Kita ,  Nobuyuki Kawabata

IPC分类号： E04C2/04

CPC分类号： E04B5/40 ,  E04B5/36 ,  E04B5/38

摘要： Providing a half precast slab even in a case where the thickness of the slab in the site condition is too thick to apply conventional precast construction techniques. A half precast slab including a plurality of floor concrete form members and, each floor concrete form member being provided with: a bottom slab of a long length, in response to the floor concrete form member; a pair of side walls installed upright along each longitudinal edge of the bottom slab, in response to the floor concrete form member; thereby, each floor concrete form member is arranged so as to be parallel to each other and be tightly connected to the adjacent floor concrete form member, along the direction perpendicular to the longitudinal direction of each floor concrete form member; the height of the side walls other than the side walls on the most outer edge sides of the whole floor concrete form members is set at a common height that is smaller than the height of the side walls on the most outer edge sides.

摘要翻译： 即使在现场条件下的板坯的厚度太厚而不能应用常规的预制构造技术的情况下，也提供半预制板坯。 包括多个地板混凝土模板构件的半预制板，并且每个地板混凝土模板构件设置有：响应于地板混凝土模板构件长长的底板; 响应于地板混凝土形式构件，沿着底板的每个纵向边缘竖立安装的一对侧壁; 由此，每个地板混凝土模板构件被布置成彼此平行，并且沿垂直于每个地板混凝土构件的纵向的方向紧密地连接到相邻的地板混凝土模板构件; 除了整个地板混凝土构件的最外侧边缘的侧壁以外的侧壁的高度被设定为比最外边缘侧的侧壁的高度小的公共高度。

公开(公告)号：US08043469B2

公开(公告)日：2011-10-25

申请号：US11905859

申请日：2007-10-04

申请人： Mitsunori Nakamori ,  Yusuke Saito ,  Akira Ishihara ,  Satoru Tanaka ,  Yuji Murakami

发明人： Mitsunori Nakamori ,  Yusuke Saito ,  Akira Ishihara ,  Satoru Tanaka ,  Yuji Murakami

IPC分类号： H01L21/304

CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

摘要： At first, with a chamber being filled with a first gas, a process liquid is supplied onto a surface of a wafer in the chamber so as to process the surface of the wafer. At this time, the process liquid discharged from the chamber is returned to a process-liquid supplying part. Thereafter, with the chamber being filled with a second gas whose humidity is lower than that of the first gas, a fluid for forming a liquid film is supplied onto the surface of the wafer in the chamber to form a liquid film on the surface of the wafer and to dry the surface of the wafer.

摘要翻译： 首先，在室内填充有第一气体的情况下，将处理液体供给到室内的晶片的表面，以处理晶片的表面。 此时，从室排出的处理液体返回到处理液供给部。 此后，在室内充满湿度低于第一气体的第二气体的情况下，将用于形成液膜的流体供给到室内的晶片表面，以在该表面上形成液膜 晶片并干燥晶片的表面。

公开(公告)号：US07899908B2

公开(公告)日：2011-03-01

申请号：US10576055

申请日：2005-08-08

申请人： Satoru Tanaka ,  Tetsuro Kagoshima ,  Shinsuke Miyayama ,  Yutaka Iida ,  Keiji Terauchi

发明人： Satoru Tanaka ,  Tetsuro Kagoshima ,  Shinsuke Miyayama ,  Yutaka Iida ,  Keiji Terauchi

IPC分类号： G06F15/16 ,  G06F15/173

CPC分类号： H04L67/1008 ,  H04L45/00 ,  H04L65/4084 ,  H04L65/80 ,  H04L67/1002 ,  H04N7/17336 ,  H04N21/2396 ,  H04N21/41407 ,  H04N21/47202 ,  H04W4/06 ,  H04W28/18 ,  H04W76/10 ,  H04W80/00

摘要： To provide a distribution request management method and so on in which a communication service providing side can perform data signal distribution while keeping high reliability.A maximum number of distributable requests is set arbitrarily for requests from a mobile communication network 10 to one or plural contents providing servers 31 provided on a communication network 30, the requests being made for distribution of signals including data of contents, and a request management apparatus sends the signal distribution requests to the contents providing servers as long as the number of the requests is within a range not larger than the maximum number of distributable requests.

摘要翻译： 提供通信服务提供方可以在保持高可靠性的同时执行数据信号分配的分发请求管理方法等。 对于从移动通信网络10到提供在通信网络30上的一个或多个内容提供服务器31的请求，任意设置可分发请求的最大数量，用于分发包括内容数据的信号的请求以及请求管理装置 只要请求数量在不大于最大可分发请求数的范围内，就将信号分发请求发送到内容提供服务器。

公开(公告)号：US20100321140A1

公开(公告)日：2010-12-23

申请号：US12526138

申请日：2008-02-06

申请人： Satoru Tanaka ,  Takeshi Tachibana

发明人： Satoru Tanaka ,  Takeshi Tachibana

IPC分类号： H01F17/06 ,  H01F1/10

CPC分类号： H01F17/0013 ,  C04B35/265 ,  C04B35/6262 ,  C04B35/62645 ,  C04B2235/3208 ,  C04B2235/3263 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/724 ,  C04B2235/725 ,  C04B2235/726 ,  C04B2235/727 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/94 ,  H01F1/344 ,  H01F41/0246 ,  H01F41/046 ,  H01F2017/048

摘要： Low-loss ferrite comprising 100% by mass of main components comprising 47.1-49.3% by mol of Fe2O3, 20-26% by mol of ZnO, and 6-14% by mol of CuO, the balance being NiO, and 0.1-2% by mass (as SnO2) of Sn and 0.05-2% by mass (as Mn3O4) of Mn, and having an average crystal grain size of 0.5-3 μm.

摘要翻译： 包含100质量％的主成分的低损耗铁氧体包含47.1〜49.3摩尔％的Fe 2 O 3，20〜26摩尔％的ZnO和6〜14摩尔％的CuO，余量为NiO，0.1〜 （SnO 2），Mn为0.05〜2质量％（Mn 3 O 4），平均结晶粒径为0.5〜3μm。

公开(公告)号：US07728483B2

公开(公告)日：2010-06-01

申请号：US11668220

申请日：2007-01-29

申请人： Satoru Tanaka

发明人： Satoru Tanaka

IPC分类号： H01L41/08

CPC分类号： H03H9/02228 ,  H03H3/02 ,  H03H9/02023 ,  H03H9/1014 ,  H03H2003/027 ,  Y10T29/42

摘要： A Lamb wave type high frequency device comprises: a piezoelectric substrate; an interdigital transducer (IDT) electrode formed on a first main surface of the piezoelectric substrates a reinforcing substrate connected to a second main surface of the piezoelectric substrate; a space portion formed in one of the piezoelectric substrate and the reinforcing substrate, an area of the space portion being larger than a region in which a Lamb wave is propagated; and a connecting surface formed in a periphery of the space portion.

摘要翻译： 兰姆波型高频器件包括：压电基片; 在所述压电基板的第一主表面上形成有与所述压电基板的第二主面连接的加强基板的叉指式换能器（IDT）电极， 形成在所述压电基板和所述加强基板之一中的空间部分，所述空间部分的面积大于所述兰姆波传播的区域; 以及形成在所述空间部的周边的连接面。

公开(公告)号：US07727759B2

公开(公告)日：2010-06-01

申请号：US12280125

申请日：2007-02-21

申请人： Fujiko Ozawa ,  Takahisa Kusuura ,  Jun Shimada ,  Satoru Tanaka

发明人： Fujiko Ozawa ,  Takahisa Kusuura ,  Jun Shimada ,  Satoru Tanaka

IPC分类号： C12M1/22 ,  C12M3/00

CPC分类号： C12N5/0075 ,  C12M23/02 ,  C12M23/12 ,  C12N2535/10

摘要： By using a microfabrication technique such as nanoimprinting, a structure for cell culture comprising: a concavo-convex structure having a plurality of successive unit structures each formed in a polygonal shape in a planar direction and having a minimum internal diameter of less than or equal to 3 μm, wherein a width between adjoining unit structures is less than or equal to 3 μm, a concavo-convex depth is greater than or equal to 10 nm, and the concavo-convex structure functions as a cell adherence surface. By culturing cells in this structure or a cell culture vessel comprising this structure integrated therein, a structure having a spheroid or a vessel having a spheroid, in which a spheroid with lamellipodia has been formed, can be obtained. Thus, it is possible to produce the structure or the cell culture vessel in which the shape, size and material of the peak-and-valley structure are controlled. Furthermore, a spheroid suitable for, e.g., screening a drug can be easily cultured within a short period of time at a low cost.

摘要翻译： 通过使用微细加工技术如纳米压印，用于细胞培养的结构包括：具有多个连续单位结构的凹凸结构，每个单位结构在平面方向上形成为多边形，并且具有小于或等于 3μm，其中相邻单元结构之间的宽度小于或等于3μm，凹凸深度大于或等于10nm，并且所述凹凸结构用作单元附着表面。 通过在该结构中培养细胞或将该结构整合在其中的细胞培养容器，可以获得具有球状体的结构或具有球状体的容器，其中已经形成具有薄片状的球状体。 因此，可以制造其中控制峰谷结构的形状，尺寸和材料的结构或细胞培养容器。 此外，适合于例如筛选药物的球体可以在短时间内容易地以低成本进行培养。

公开(公告)号：US20090246872A1

公开(公告)日：2009-10-01

申请号：US12280125

申请日：2007-02-21

申请人： Fujiko Ozawa ,  Takahisa Kusuura ,  Jun Shimada ,  Satoru Tanaka

发明人： Fujiko Ozawa ,  Takahisa Kusuura ,  Jun Shimada ,  Satoru Tanaka

IPC分类号： C12N5/00 ,  C12M1/00 ,  B29C59/00

CPC分类号： C12N5/0075 ,  C12M23/02 ,  C12M23/12 ,  C12N2535/10

摘要： By using a microfabrication technique such as nanoimprinting, a structure for cell culture comprising: a concavo-convex structure having a plurality of successive unit structures each formed in a polygonal shape in a planar direction and having a minimum internal diameter of less than or equal to 3 μm, wherein a width between adjoining unit structures is less than or equal to 3 μm, a concavo-convex depth is greater than or equal to 10 nm, and the concavo-convex structure functions as a cell adherence surface. By culturing cells in this structure or a cell culture vessel comprising this structure integrated therein, a structure having a spheroid or a vessel having a spheroid, in which a spheroid with lamellipodia has been formed, can be obtained. Thus, it is possible to produce the structure or the cell culture vessel in which the shape, size and material of the peak-and-valley structure are controlled. Furthermore, a spheroid suitable for, e.g., screening a drug can be easily cultured within a short period of time at a low cost.

摘要翻译： 通过使用微细加工技术如纳米压印，用于细胞培养的结构包括：具有多个连续单位结构的凹凸结构，每个单位结构在平面方向上形成为多边形，并且具有小于或等于 3μm，其中相邻单元结构之间的宽度小于或等于3μm，凹凸深度大于或等于10nm，并且所述凹凸结构用作细胞粘附表面。 通过在该结构中培养细胞或将该结构整合在其中的细胞培养容器，可以获得具有球状体的结构或具有球状体的容器，其中已经形成具有薄片状的球状体。 因此，可以制造其中控制峰谷结构的形状，尺寸和材料的结构或细胞培养容器。 此外，适合于例如筛选药物的球体可以在短时间内容易地以低成本进行培养。

公开(公告)号：US07528685B2

公开(公告)日：2009-05-05

申请号：US11380509

申请日：2006-04-27

申请人： Satoru Tanaka

发明人： Satoru Tanaka

IPC分类号： H03H9/00 ,  H03H9/25 ,  H03H9/125

CPC分类号： H03H9/02842 ,  H03H9/02228 ,  H03H9/02551 ,  H03H9/14552 ,  H03H9/6426 ,  H03H9/643

摘要： A lamb wave type high frequency device includes: an interdigital transducer (IDT) electrode having an electrode finger interdigitated therein; a pair of reflectors having an electrode finger and being disposed at both sides of a propagation direction of a lamb wave excited by the IDT electrode; and a piezoelectric substrate on a surface of which the IDT electrode and the reflectors are disposed, wherein a pitch of the electrode finger of the IDT electrode and a pitch of the electrode finger of the reflectors are different from one another.

摘要翻译： 兰姆波型高频器件包括：叉指式换能器（IDT）电极，其中具有互相指向的电极指; 一对反射器，具有电极指并设置在由IDT电极激发的兰姆波的传播方向的两侧; 以及其上设置有IDT电极和反射器的表面上的压电基板，其中IDT电极的电极指的间距和反射器的电极指的间距彼此不同。

公开(公告)号：US07457701B2

公开(公告)日：2008-11-25

申请号：US11628579

申请日：2005-12-27

申请人： Satoru Tanaka

发明人： Satoru Tanaka

IPC分类号： F02D41/14 ,  G06F19/00 ,  G01M15/00 ,  G01M12/00

CPC分类号： F02D41/18 ,  F02B29/0425 ,  F02B29/0437 ,  F02B37/00 ,  F02B39/16 ,  F02D13/0223 ,  F02D23/00 ,  F02D41/0007 ,  F02D2041/141 ,  F02D2041/1434 ,  F02D2200/0402

摘要： This air quantity estimation apparatus inputs an output quantity Vafm of an air flowmeter 61 disposed in an intake passage upstream of a compressor 91a to an AFM inverse model M1 to thereby estimate the flow rate (compressor-inflow-air flow rate) mcmi of air actually flowing into the compressor, which flow rate has been compensated for detection delay. This apparatus estimates the quantity of air introduced in a cylinder (cylinder-interior air quantity) Klfwd at a future time point after the present time point on the basis of the estimated actual compressor-inflow-air flow rate mcmi employed as a flow rate of air actually flowing out of the compressor at the present time point, and first and second air models M10 and M20 which describe the behavior of air within the intake passage downstream of the compressor in accordance with physical laws.

摘要翻译： 该空气量估计装置将设置在压缩机91a上游的进气通道中的空气流量计61的输出量Vafm输入到AFM逆模型M 1，从而估计流量（压缩机流入空气流量）mcmi 空气实际上流入压缩机，这个流量已经被补偿了检测延迟。 该装置基于作为流量的估计的实际压缩机流入空气流量mcmi来估计在当前时间点之后的未来时间点在气缸中引入的空气量（气缸内部空气量）Klfwd 实际上在当前时间点从压缩机流出的空气，以及描述根据物理定律在压缩机下游的进气通道内的空气行为的第一和第二空气模型M 10和M 20。