摘要:
Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm−1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.
摘要:
Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the memory cell includes fa first device having a first conductive line extending over a first active region and having a first line end of the first conductive line positioned over an isolation region adjacent to the first active region; and a second device having a second conductive line extending over one of a second active region and a contact element and having a second line end of the second conductive line positioned over the isolation region adjacent to the one of the second active region and the contact element, wherein the first line end and the second line end each include a bulbous end that is distanced from a respective active region or contact element.
摘要:
A method for manufacturing a microelectronic circuit includes the steps of providing a first wiring level comprising first wiring level conductors separated by a first wiring level dielectric material; forming a plurality of alternating layers of layer dielectric material and sacrificial material over the first wiring level; and forming a plurality of interconnect openings and a plurality of gap openings in the alternating layers of layer dielectric material and sacrificial material. The interconnect openings are formed over the first wiring level conductors. The method further includes forming (i) metallic conductors comprising second wiring level conductors, and (ii) interconnects, at the interconnect openings; and removing the layers of the sacrificial material through the gap openings.
摘要:
Interconnect dual damascene structure are fabricated by depositing on a layer of at least one dielectric, a mask forming layer for providing the via-level mask layer of the dual damascene structures; creating an elongated via pattern in the via-level mask layer; depositing a layer of line-level dielectric and creating a line pattern through the layer of line-level dielectric, and transferring the line pattern through the projected intersection of the elongated via-level pattern and of the line-level pattern thereby generating an aligned dual damascene structure. A conductive liner layer is deposited in the dual damascene structure followed by filling the dual damascene structure with a conductive fill metal to form a set of metal lines. The metal and liner layers are planarized.
摘要:
A method of forming cavities within a semiconductor device is disclosed. The method comprises depositing an anti-nucleating layer on the interior surface of cavities within an ILD layer of the semiconductor device. This anti-nucleating layer prevents subsequently deposited dielectric layers from forming within the cavities. By preventing the formation of these layers, the capacitance is reduced, thereby resulting in improved semiconductor performance.
摘要:
The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
摘要:
A method (and apparatus) of replicating a pattern on a structure, includes using imprint lithography to replicate a pattern formed on a first structure onto a portion of a second structure.
摘要:
The present invention includes an imprint lithography system for impinging a flux of light upon a liquid to polymerize the liquid, the system including, a source of light producing the flux of light; and a template having overlay marks being disposed between the liquid and the source of light and being opaque to the flux of light, with a pitch of the overlay marks establishing a polarization of the flux of light such that the flux of light impinges upon and polymerizes the liquid in superimposition with the overlay marks.