公开(公告)号：US20240244882A1

公开(公告)日：2024-07-18

申请号：US18558233

申请日：2022-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shingo EGUCHI ,  Kenichi OKAZAKI ,  Yukinori SHIMA

IPC: H10K59/12 ,  H10K59/122 ,  H10K59/35

CPC classification number: H10K59/1201 ,  H10K59/122 ,  H10K59/35

Abstract: A display device with high resolution is provided. The display device includes a light-emitting element including a first electrode, an organic compound layer, and a second electrode; a first transistor electrically connected to the first electrode; a second transistor electrically connected to a gate of the first transistor; and an insulator provided to cover an end portion of the first electrode. The first transistor contains silicon in a channel formation region. The second transistor includes an oxide semiconductor in a channel formation region. An end portion of the organic compound layer is positioned in the opening portion of the insulator.

公开(公告)号：US20240113229A1

公开(公告)日：2024-04-04

申请号：US18524259

申请日：2023-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Suzunosuke HIRAISHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78696

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.

公开(公告)号：US20240079479A1

公开(公告)日：2024-03-07

申请号：US18388883

申请日：2023-11-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/022 ,  H01L21/02263 ,  H01L27/1225 ,  H01L29/513 ,  H01L29/78609 ,  H01L29/7869

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20230411526A1

公开(公告)日：2023-12-21

申请号：US18240775

申请日：2023-08-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G02F1/1339 ,  G02F1/1333 ,  G02F1/1335 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  G02F1/1368

CPC classification number: H01L29/78606 ,  G02F1/13394 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/1251 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  G02F1/1368 ,  H10K59/1213

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US20230387217A1

公开(公告)日：2023-11-30

申请号：US18228134

申请日：2023-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/423 ,  H01L29/786 ,  H01L29/49 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/24 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/4908 ,  H01L29/0692 ,  H01L29/1037 ,  H01L29/7869 ,  H01L29/78696

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US20220406944A1

公开(公告)日：2022-12-22

申请号：US17894197

申请日：2022-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G09F9/30 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H05B33/10 ,  H05B33/14

Abstract: A semiconductor device which has favorable electrical characteristics, a method for manufacturing a semiconductor device with high productivity, and a method for manufacturing a semiconductor device with a high yield are provided. The method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

公开(公告)号：US20220293641A1

公开(公告)日：2022-09-15

申请号：US17830546

申请日：2022-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US20220271150A1

公开(公告)日：2022-08-25

申请号：US17743947

申请日：2022-05-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Yukinori SHIMA

IPC: H01L29/66 ,  G02F1/1368 ,  H01L21/426 ,  H01L21/4763 ,  H01L27/12

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a first insulating layer, a third step of forming a first conductive film over the first insulating layer, a fourth step of etching part of the first conductive film to form a first conductive layer, thereby forming a first region over the semiconductor layer that overlaps with the first conductive layer and a second region over the semiconductor layer that does not overlap with the first conductive layer, and a fifth step of performing first treatment on the conductive layer. The first treatment is plasma treatment in an atmosphere including a mixed gas of a first gas containing an oxygen element but not containing a hydrogen element, and a second gas containing a hydrogen element but not containing an oxygen element.

公开(公告)号：US20220013657A1

公开(公告)日：2022-01-13

申请号：US17398037

申请日：2021-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L29/423

Abstract: Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

公开(公告)号：US20210399106A1

公开(公告)日：2021-12-23

申请号：US17288680

申请日：2019-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/423 ,  H01L29/49 ,  H01L29/66

Abstract: A highly reliable semiconductor device with favorable electrical characteristics is provided. A semiconductor device includes a semiconductor layer, an insulating layer, a metal oxide layer, and a conductive layer. The semiconductor layer, the insulating layer, the metal oxide layer, and the conductive layer are stacked in this order. The semiconductor layer includes a first region, a pair of second regions, and a pair of third regions. The first region overlaps the metal oxide layer. The second regions sandwich the first region, overlap the insulating layer, and do not overlap the metal oxide layer. The third regions sandwich the first region and the pair of second regions, and do not overlap the insulating layer. The third region includes a portion having a lower resistance than the first region. The second region includes a portion having a higher resistance than the third region.