公开(公告)号：US20250159936A1

公开(公告)日：2025-05-15

申请号：US19013412

申请日：2025-01-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H10D30/67 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/306 ,  H01L21/465 ,  H10D30/01 ,  H10D62/10 ,  H10D62/17 ,  H10D62/40 ,  H10D62/80 ,  H10D64/27 ,  H10D86/01 ,  H10D86/40 ,  H10D86/60 ,  H10D99/00 ,  H10K59/123

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20170250204A1

公开(公告)日：2017-08-31

申请号：US15594813

申请日：2017-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Masahiro WATANABE ,  Hajime TOKUNAGA

IPC: H01L27/12 ,  H01L21/316 ,  H01L29/24 ,  G02F1/1368 ,  H01L27/105 ,  H01L29/786 ,  H01L51/50

CPC classification number: H01L27/1248 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/50

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

公开(公告)号：US20160190348A1

公开(公告)日：2016-06-30

申请号：US15062276

申请日：2016-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/022 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

Abstract translation: 在包括晶体管的半导体器件中，所述晶体管包括形成在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅电极重叠的多层膜，栅极绝缘膜设置在其间;以及一对电极， 多层膜，覆盖晶体管的第一氧化物绝缘膜和形成在第一氧化物绝缘膜上的第二氧化物绝缘膜，所述多层膜包括氧化物半导体膜和含有In或Ga的氧化物膜，所述氧化物半导体膜具有无定形 结构或微晶结构，所述第一氧化物绝缘膜是透过氧的氧化物绝缘膜，所述第二氧化物绝缘膜是比所述化学计量组成中含有氧更多的氧化物绝缘膜。

公开(公告)号：US20190288093A1

公开(公告)日：2019-09-19

申请号：US16429176

申请日：2019-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/51 ,  H01L21/02 ,  H01L27/12

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20180294363A1

公开(公告)日：2018-10-11

申请号：US16003145

申请日：2018-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L21/02 ,  H01L29/24

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20170155003A1

公开(公告)日：2017-06-01

申请号：US15432142

申请日：2017-02-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime TOKUNAGA ,  Takuya HANDA

IPC: H01L29/786 ,  H01L27/146 ,  H01L29/45 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

公开(公告)号：US20150187779A1

公开(公告)日：2015-07-02

申请号：US14656322

申请日：2015-03-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota TAJIMA ,  Hajime TOKUNAGA

IPC: H01L27/112

CPC classification number: H01L27/11206 ,  H01L23/5252 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object is to provide an antifuse with little power consumption at the time of writing. The antifuse is used for a memory element in a read-only memory device. The antifuse includes a first conductive layer, a multilayer film of two or more layers in which an amorphous silicon film and an insulating film are alternately stacked over the first conductive layer, and a second conductive layer over the multilayer film. Voltage is applied between the first and second conductive layers and resistance of the multilayer film is decreased, whereby data is written to the memory element. When an insulating film having higher resistance than amorphous silicon is formed between the first and second conductive layers, current flowing through the antifuse at the time of writing is reduced.

Abstract translation: 目的是提供一种在写入时功耗很小的反熔丝。 反熔丝用于只读存储器件中的存储元件。 反熔丝包括第一导电层，其中非晶硅膜和绝缘膜交替堆叠在第一导电层上的两层或更多层的多层膜，以及多层膜上的第二导电层。 电压施加在第一和第二导电层之间，并且多层膜的电阻降低，从而将数据写入存储元件。 当在第一和第二导电层之间形成具有比非晶硅更高的电阻的绝缘膜时，在写入时流过反熔丝的电流减小。

公开(公告)号：US20150115262A1

公开(公告)日：2015-04-30

申请号：US14585904

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime TOKUNAGA ,  Takuya HANDA

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

Abstract translation: 提供具有几乎不变化的晶体管特性并包括氧化物半导体的半导体器件。 半导体器件包括绝缘膜上的导电膜上的绝缘膜和氧化物半导体膜。 氧化物半导体膜包括第一氧化物半导体层，第一氧化物半导体层上的第二氧化物半导体层，以及在第二氧化物半导体层上的第三氧化物半导体层。 第二氧化物半导体层的导带的底部的能级低于第一和第三氧化物半导体层的能级。 第二氧化物半导体层的端部位于比第一氧化物半导体层的端部更靠内侧。

公开(公告)号：US20130320334A1

公开(公告)日：2013-12-05

申请号：US13900894

申请日：2013-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78696

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer.

Abstract translation: 通过防止其电特性的改变来提供包括氧化物半导体的高度可靠的半导体器件。 提供一种半导体器件，其包括与源电极层和漏电极层接触的第一氧化物半导体层和用作晶体管的主电流路径（沟道）的第二氧化物半导体层。 第一氧化物半导体层用作用于防止源电极层和漏极电极层的构成元素扩散到沟道中的缓冲层。 通过设置第一氧化物半导体层，可以防止构成元素扩散到第一氧化物半导体层和第二氧化物半导体层之间的界面中并进入第二氧化物半导体层。

公开(公告)号：US20130284816A1

公开(公告)日：2013-10-31

申请号：US13926320

申请日：2013-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime TOKUNAGA

IPC: G06K19/077 ,  G02F1/133 ,  G02F1/167

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/13454 ,  G02F1/1362 ,  G02F1/167 ,  G06K19/07703 ,  G06K19/07707 ,  H01L27/1214 ,  H01L27/13 ,  H01L27/3244 ,  H01L29/78621 ,  H01L29/78627

Abstract: To provide a wireless identification semiconductor device provided with a display function, which is capable of effectively utilizing electric power supplied by an electromagnetic wave. The following are included: an antenna; a power source generating circuit electrically connected to the antenna; an IC chip circuit and a display element electrically connected to the power source generating circuit; a first TFT provided in the power source generating circuit; a second TFT provided in the IC chip circuit; a third TFT provided in the display element; an insulating film provided to cover the first to third TFTs; a first source electrode and a first drain electrode, a second source electrode and a second drain electrode, and a third source electrode and a third drain electrode which are formed over the insulating film; and a pixel electrode electrically connected to the third source electrode or the third drain electrode. The first source electrode or the first drain electrode is electrically connected to the antenna.

Abstract translation: 提供一种具有显示功能的无线识别半导体器件，其能够有效地利用由电磁波提供的电力。 包括以下内容：天线; 与天线电连接的电源产生电路; 电连接到所述电源发生电路的IC芯片电路和显示元件; 设置在所述电源发生电路中的第一TFT; 设置在IC芯片电路中的第二TFT; 设置在显示元件中的第三TFT; 设置为覆盖第一至第三TFT的绝缘膜; 第一源电极和第一漏电极，第二源电极和第二漏电极，以及形成在绝缘膜上的第三源电极和第三漏电极; 以及电连接到第三源电极或第三漏电极的像素电极。 第一源极或第一漏极电连接到天线。