公开(公告)号：US20240268152A1

公开(公告)日：2024-08-08

申请号：US18290862

申请日：2022-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Kentaro SUGAYA ,  Yoshikazu HIURA ,  Takahiro FUJIE ,  Yasuhiro JINBO

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/80

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/80521

Abstract: A display device with high display quality is provided. The display device includes a plurality of light-emitting devices each including a pixel electrode, a light-emitting layer, a functional layer, a common layer, and a common electrode in this order and includes an insulating layer positioned between side surfaces of the light-emitting layers adjacent to each other. The light-emitting layer and the functional layer each having an island shape are provided in each light-emitting device, and the plurality of light-emitting devices share the common layer. The common layer and the common electrode are provided to cover the insulating layer. In a cross-sectional view, an end portion of the insulating layer has a tapered shape with a taper angle greater than 0° and less than 90°.

公开(公告)号：US20240138204A1

公开(公告)日：2024-04-25

申请号：US18548186

申请日：2022-02-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Shinya SASAGAWA ,  Yoshikazu HIURA ,  Takahiro FUJIE

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/35

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/353

Abstract: A high-definition and high-resolution display apparatus is provided. A conductive film, a first layer, and a first sacrificial layer are formed. The first layer and the first sacrificial layer are processed to expose part of the conductive film. A second layer and a second sacrificial layer are formed over the first sacrificial layer and the conductive film. The second layer and the second sacrificial layer are processed to expose part of the conductive film. The conductive film is processed to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer. Two insulating films covering at least a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first layer, a side surface of the second layer, a side surface and a top surface of the first sacrificial layer, and a side surface and atop surface of the second sacrificial layer are formed. The two insulating films are processed to form a sidewall covering at least the side surface of the first pixel electrode and the side surface of the first layer. The first sacrificial layer and the second sacrificial layer are removed. A common electrode is formed over the first layer and the second layer.

公开(公告)号：US20230307550A1

公开(公告)日：2023-09-28

申请号：US18020758

申请日：2021-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasumasa YAMANE ,  Yoshinori ANDO ,  Shigeki KOMORI ,  Ryota HODO ,  Tatsuya ONUKI ,  Shinya SASAGAWA

IPC: H01L29/786

CPC classification number: H01L29/78693

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes a first device layer to an n-th (n is a natural number of 2 or more) device layer, each of which includes a first barrier insulating film, a second barrier insulating film, a third barrier insulating film, an oxide semiconductor device, a first conductor, and a second conductor. In each of the first device layer to the n-th device layer, the oxide semiconductor device is placed over the first barrier insulating film, the second barrier insulating film is placed to cover the oxide semiconductor device, the first conductor is placed so as to be electrically connected to the oxide semiconductor device through an opening formed in the second barrier insulating film, the second conductor is placed over the first conductor, the third barrier insulating film is placed over the second conductor and the second barrier insulating film, and the first barrier insulating film to the third barrier insulating film have a function of inhibiting diffusion of hydrogen.

公开(公告)号：US20230113593A1

公开(公告)日：2023-04-13

申请号：US17915211

申请日：2021-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshihiro KOMATSU ,  Shota MIZUKAMI ,  Shinobu KAWAGUCHI ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Yuji EGI ,  Yujiro SAKURADA ,  Shinya SASAGAWA

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/51 ,  H01L21/02

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.

公开(公告)号：US20220399338A1

公开(公告)日：2022-12-15

申请号：US17773068

申请日：2020-10-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hiroki KOMAGATA ,  Yoshihiro KOMATSU ,  Shinya SASAGAWA ,  Takashi HAMADA ,  Yasumasa YAMANE ,  Shota MIZUKAMI

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: To provide a semiconductor device with less variations in characteristics. The semiconductor device includes a first circuit region and a second circuit region over a substrate, where the first circuit region includes a plurality of first transistors and a first insulator over the plurality of first transistors; the second circuit region includes a plurality of second transistors and a second insulator over the plurality of second transistors; the second insulator includes an opening portion; the first transistors and the second transistors each include an oxide semiconductor; a third insulator is positioned over and in contact with the first insulator and the second insulator; the first insulator, the second insulator, and the third insulator inhibit oxygen diffusion; and the density of the plurality of first transistors arranged in the first circuit region is higher than the density of the plurality of second transistors arranged in the second circuit region.

公开(公告)号：US20220208988A1

公开(公告)日：2022-06-30

申请号：US17605187

申请日：2020-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Shinya SASAGAWA ,  Naoto YAMADE ,  Takashi HAMADA ,  Hiroki KOMAGATA

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/225

Abstract: A semiconductor device with less variations in transistor characteristics is provided.
A first insulator is deposited; an island-shaped stacked body in which a first oxide, a second oxide, and a first conductor are stacked in this order is formed over the first insulator; a second insulator is formed over the first insulator and the stacked body; an opening portion for exposing the stacked body is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor exposed in the opening portion, a second conductor and a third conductor are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide that are exposed in the opening portion; oxygen addition treatment is performed on a vicinity of an interface between the second oxide and the first oxide film through the first oxide film and then heat treatment is performed; and a first insulating film and a first conductive film are deposited over the first oxide film, and then parts of the first conductive film, the first insulating film, the first oxide film, and the second insulator are removed by chemical polishing treatment to expose the second insulator and form a fourth conductor, a third insulator, and a third oxide in the opening portion provided in the second insulator.

公开(公告)号：US20220077317A1

公开(公告)日：2022-03-10

申请号：US17414490

申请日：2019-11-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Katsuaki TOCHIBAYASHI ,  Tsutomu MURAKAWA ,  Erika TAKAHASHI

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.

公开(公告)号：US20210288077A1

公开(公告)日：2021-09-16

申请号：US17329250

申请日：2021-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota HODO ,  Motomu KURATA ,  Shinya SASAGAWA ,  Satoru OKAMOTO ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/467 ,  H01L21/463 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/532

Abstract: First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is formed thereover; a resist mask with a second opening is formed thereover; a third opening is formed in the third insulator; a fourth opening is formed in the second insulator; the resist mask is removed; a fifth opening is formed in the first to third insulators; a second conductor is formed to cover an inner wall and a bottom surface of the fifth opening; a third conductor is formed thereover; polishing treatment is performed so that the hard mask is removed, and that levels of top surfaces of the second and third conductors and the third insulator are substantially equal to each other; and an oxide semiconductor is formed thereover. The second insulator is less permeable to hydrogen than the first and third insulators, the second conductor is less permeable to hydrogen than the third conductor.

公开(公告)号：US20200321360A1

公开(公告)日：2020-10-08

申请号：US16876286

申请日：2020-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Tomoaki MORIWAKA ,  Jiro NISHIDA ,  Hidekazu MIYAIRI ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/84 ,  H01L23/522 ,  H01L27/13

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

公开(公告)号：US20200258914A1

公开(公告)日：2020-08-13

申请号：US16863291

申请日：2020-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka Okazaki ,  Tomoaki MORIWAKA ,  Shinya SASAGAWA ,  Takashi OHTSUKI

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/768

Abstract: To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.