公开(公告)号：US07244738B2

公开(公告)日：2007-07-17

申请号：US10884768

申请日：2004-07-02

Applicant: Terrence Joseph Connolly ,  Paul Francis Keitz ,  Eun Kyung Lee ,  Jim Li ,  Francisco Javier Lopez-Tapia ,  Patrick Finbar McGarry ,  Chris Richard Melville ,  Dov Nitzan ,  Counde O'Yang ,  Fernando Padilla ,  Klaus Kurt Weinhardt

Inventor： Terrence Joseph Connolly ,  Paul Francis Keitz ,  Eun Kyung Lee ,  Jim Li ,  Francisco Javier Lopez-Tapia ,  Patrick Finbar McGarry ,  Chris Richard Melville ,  Dov Nitzan ,  Counde O'Yang ,  Fernando Padilla ,  Klaus Kurt Weinhardt

IPC: A61K31/517 ,  A01N43/54 ,  C07D239/72 ,  A61K31/549 ,  C07D417/02 ,  C07D285/26

CPC classification number: C07D401/12 ,  C07D239/90 ,  C07D239/95 ,  C07D285/24 ,  C07D401/14 ,  C07D403/12 ,  C07D405/12 ,  C07D413/12 ,  C07D417/12

Abstract: Compounds represented by Formula I: which are useful as are alpha-1A/B adrenoceptor antagonists, to methods of treating conditions associated with the activity of alpha-1A/B adrenoceptors, and to methods of making said compounds, wherein Ar, Z, R, R′, R5 and R10 are as defined herein.

Abstract translation: 由式I表示的化合物：其可用作α-1A / B肾上腺素受体拮抗剂，用于治疗与α-1A / B肾上腺素受体的活性相关的病症的方法，以及制备所述化合物的方法，其中Ar，Z，R R'，R 5和R 10如本文所定义。

公开(公告)号：US20070020950A1

公开(公告)日：2007-01-25

申请号：US11362897

申请日：2006-02-27

Applicant: Byoung-lyong Choi ,  Wan-jun Park ,  Eun-kyung Lee ,  Jea-woong Hyun

Inventor： Byoung-lyong Choi ,  Wan-jun Park ,  Eun-kyung Lee ,  Jea-woong Hyun

IPC: H01L21/31

CPC classification number: B82Y10/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/861

Abstract: A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the first doping layer and a surface of the silicon substrate, forming a metal layer on the silicon substrate, forming catalysts by heating the metal layer within the microgrooves of the silicon substrate and growing the nano wires between the catalysts and the silicon substrate using a thermal process.

Abstract translation: 一种制造硅纳米线的方法，包括在硅衬底的表面上形成微槽，在硅衬底上形成掺杂有第一掺杂剂的第一掺杂层，并在第一掺杂层和第一掺杂层之间形成掺杂有第二掺杂剂的第二掺杂层 在硅衬底上形成金属层，通过加热硅衬底的微槽内的金属层并使用热处理在催化剂和硅衬底之间生长纳米线，形成催化剂。

公开(公告)号：US20060269745A1

公开(公告)日：2006-11-30

申请号：US11362046

申请日：2006-02-27

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi ,  Sang-jun Choi ,  Hoon Kim

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Sang-jun Choi ,  Hoon Kim

IPC: D02G3/00

CPC classification number: H01L21/0273 ,  H01L21/26533 ,  H01L21/31654 ,  H01L21/76243 ,  H01L33/20 ,  Y10T428/2913

Abstract: The present invention provides a method of manufacturing nano wires and nano wires having a p-n junction structure. The method includes: stacking a mask layer on a substrate; patterning the mask layer into stripes; and performing an oxygen ion injection process on the substrate and the mask layer to form oxygen ion injection regions in the substrate, thereby forming nano wire regions embedded in the substrate and separated from the substrate by the oxygen ion injection regions.

Abstract translation: 本发明提供一种制造具有p-n结结构的纳米线和纳米线的方法。 该方法包括：在基板上层叠掩模层; 将掩模层图案化成条纹; 在基板和掩模层上进行氧离子注入处理，在基板上形成氧离子注入区域，由此形成嵌入到基板内的纳米线区域，并通过氧离子注入区域与基板分离。

公开(公告)号：US20060182966A1

公开(公告)日：2006-08-17

申请号：US11349250

申请日：2006-02-08

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi

IPC: D02G3/00

CPC classification number: C30B29/06 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/60 ,  Y10T428/2933

Abstract: Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.

Abstract translation: 提供了具有氮化硅壳的硅纳米线及其制造方法。 每个硅纳米线具有由硅形成的芯部分和由围绕芯部分的氮化硅形成的壳部分。 该方法包括去除形成在硅纳米线的外壳上并形成氮化硅壳的氧化硅。

公开(公告)号：US07012239B2

公开(公告)日：2006-03-14

申请号：US10716665

申请日：2003-11-20

Applicant: Jun-young Kim ,  Byoung-Iyong Choi ,  Eun-kyung Lee

Inventor： Jun-young Kim ,  Byoung-Iyong Choi ,  Eun-kyung Lee

IPC: H01L31/00

CPC classification number: H01L31/125 ,  H01L31/173

Abstract: A silicon optoelectronic device includes an optoelectronic device portion and a switching portion. The switching portion selectively controls the emission and detection of light by the optoelectronic device portion. The optoelectronic device portion includes: a doped region of the opposite type to an n- or p-type silicon-based substrate, in which emission and detection of light occurs due to quantum confinement effect at the p-n junction between the doped region and the substrate, and at least one semiconductor material region formed on the rear surface of the substrate, at least a portion of which forms a stack structure with the doped region so that a built-in transistor is formed. The silicon optoelectronic device allows selective light emission and detection without any external amplifying and switching circuits, easy control the duration of light emission and detection, and can be manufactured in a series of semiconductor fabrication process.

Abstract translation: 硅光电子器件包括光电器件部分和开关部分。 开关部分选择性地控制由光电子器件部分发出的光的发射和检测。 光电子器件部分包括：与n型或p型硅基衬底相反类型的掺杂区域，其中由于在掺杂区域和衬底之间的pn结处的量子限制效应而发生光的发射和检测 以及形成在所述衬底的后表面上的至少一个半导体材料区域，其至少一部分与所述掺杂区域形成堆叠结构，从而形成内置晶体管。 硅光电子器件允许选择性发光和检测，而无需任何外部放大和开关电路，便于控制发光和检测的持续时间，并且可以在一系列半导体制造工艺中制造。

公开(公告)号：US06885040B2

公开(公告)日：2005-04-26

申请号：US10747439

申请日：2003-12-30

Applicant: Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

Inventor： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

IPC: H01L31/107 ,  G01J1/02 ,  H01L27/14 ,  H01L31/00 ,  H01L31/0328 ,  H01L35/24

CPC classification number: H01L31/107

Abstract: A wavelength-selective photo detector device includes a transparent upper electrode including a capacitor, a first semiconductor layer disposed under the upper electrode, an optical absorption layer disposed under the first semiconductor layer for absorbing light to form pairs of electrons and holes, an amplification layer disposed under the optical absorption layer for generating secondary electrons, a second semiconductor layer disposed under the amplification layer, and a lower electrode disposed under the second semiconductor layer and including an inductance coupled in parallel with an external resistance. The photo detector improves the S/N ratio and filters only light having a particular wavelength band.

Abstract translation: 一种波长选择性光电检测器件包括：透明上电极，包括电容器，设置在上电极下方的第一半导体层，设置在第一半导体层下方以吸收光以形成电子和空穴对的光吸收层;放大层 设置在用于产生二次电子的光吸收层下方，设置在放大层下的第二半导体层，以及设置在第二半导体层下方并包括与外部电阻并联耦合的电感的下电极。 光检测器提高了S / N比，并且仅滤光具有特定波长带的光。

公开(公告)号：US06787810B2

公开(公告)日：2004-09-07

申请号：US10367786

申请日：2003-02-19

Applicant: Byoung-lyong Choi ,  Eun-kyung Lee ,  Jun-young Kim

Inventor： Byoung-lyong Choi ,  Eun-kyung Lee ,  Jun-young Kim

IPC: H01L31072

CPC classification number: H01L27/156 ,  H01L33/34

Abstract: Provided is an image input/output device including a silicon light device panel consisting of a plurality of silicon light devices arranged on an n- or p-type silicon based substrate in two or more-dimensional arrays for inputting and/or outputting an image. The silicon light device includes a silicon light device panel consisting of a plurality of silicon light devices arranged on an n- or p-type silicon based substrate in two or more-dimensional arrays for inputting and/or outputting an image. Each of the plurality of silicon light devices includes a doping region on one surface of the substrate, so that the silicon light device is used as a light-emitting device and light-receiving device, the doping region being doped to an ultra-shallow depth with a predetermined dopant of the opposite type to the substrate.

Abstract translation: 提供了一种图像输入/输出装置，其包括由用于输入和/或输出图像的两维或多维阵列中布置在n型或p型硅基衬底上的多个硅光器件组成的硅光器件面板。 硅光器件包括由用于输入和/或输出图像的两维或多维阵列中布置在n型或p型硅基衬底上的多个硅光器件组成的硅光器件面板。 多个硅光器件中的每一个在衬底的一个表面上包括掺杂区域，使得硅光器件用作发光器件和光接收器件，掺杂区被掺杂到超浅深度 具有与衬底相反类型的预定掺杂剂。

公开(公告)号：US06740904B2

公开(公告)日：2004-05-25

申请号：US10294549

申请日：2002-11-15

Applicant: Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

Inventor： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

IPC: H01L2715

CPC classification number: H01L33/34 ,  H01L27/15

Abstract: A silicon light-emitting device and a display device employing the silicon light-emitting device are provided. In the silicon light-emitting device, a doped region is ultra-shallowly doped with the opposite type dopant to the type of the substrate on one side of the substrate, so that the p-n junction between the doped region itself and the substrate creates luminance by annihilation combination of electron-hole pairs due to the quantum confinement effect. At least one semiconductor material portion at least partially forms a stack along with the doped region on the other side of the substrate. First, second, and third electrodes are formed for electric connection. The silicon light-emitting device includes a transistor of at least one step and accordingly performs current amplification and/or switching. Thus, luminance can be driven just with a small amount of current. In addition, when an array of silicon light-emitting devices is adopted in a display device, the turn-on and turn-off durations for used current can be controlled on a pixel-by-pixel basis. Therefore, the luminance duration can be easily controlled.

Abstract translation: 提供硅发光器件和采用硅发光器件的显示器件。 在硅发光器件中，掺杂区域在衬底的一侧上与衬底类型相反的掺杂剂超浅掺杂，使得掺杂区域本身和衬底之间的pn结通过 由于量子限制效应，电子 - 空穴对的湮灭组合。 至少一个半导体材料部分至少部分地与衬底的另一侧上的掺杂区域一起形成堆叠。 形成第一，第二和第三电极用于电连接。 硅发光器件包括至少一个级的晶体管，因此执行电流放大和/或切换。 因此，可以仅用少量的电流来驱动亮度。 此外，当在显示装置中采用硅发光器件阵列时，可以逐个像素地控制使用电流的导通和关断持续时间。 因此，可以容易地控制亮度持续时间。

公开(公告)号：US20230329268A1

公开(公告)日：2023-10-19

申请号：US18001479

申请日：2021-06-11

Applicant: Eun Kyung LEE

Inventor： Eun Kyung LEE

IPC: A23F3/14 ,  A23F3/40

CPC classification number: A23F3/14 ,  A23F3/405

Abstract: The present disclosure relates to making a new kind of honey by adding well-dried acacia flowers to acacia honey and packaging the obtained product in single-serving stick-type individual packs to allow acacia honey flower tea to be consumed. Also, the present disclosure relates to mixing fine powder obtained by crushing well-dried flowers well with honey in an appropriate combination and packaging the obtained product in single-serving individual packs or containers. Also, the present disclosure relates to mixing honey and well-dried fruit powder well in an appropriate ratio and additionally adding dried fruit slices or whole small dried fruit. In addition, the present disclosure relates to pickling fresh flowers in honey so that, due to physical and chemical changes to the honey, more beneficial ingredients can be consumed as compared to when the honey is consumed alone.

公开(公告)号：US09181091B2

公开(公告)日：2015-11-10

申请号：US12959501

申请日：2010-12-03

Applicant: Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Sun-hwak Woo

Inventor： Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Sun-hwak Woo

IPC: H01L21/00 ,  B82Y40/00 ,  B82Y10/00 ,  H01L29/06 ,  H01L31/0352 ,  B82Y30/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L31/035209 ,  H01L31/035227

Abstract: Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.

Abstract translation: 提供一种多孔纳米结构及其制造方法。 多孔纳米结构包括设置在纳米结构的外表面上的多个孔，其中多个孔的至少一部分在纳米结构内部延伸。