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48 条记录 (耗时 0.028 秒)

    Graphene-polymer layered composite and process for preparing the same
    4.
    发明授权
    Graphene-polymer layered composite and process for preparing the same 有权
    石墨烯聚合物层状复合材料及其制备方法

    公开(公告)号：US09144962B2

    公开(公告)日：2015-09-29

    申请号：US13094154

    申请日：2011-04-26

    申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Choong-ho Yu

    发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Choong-ho Yu

    IPC分类号： B32B3/00 ,  B32B37/02 ,  B32B37/24 ,  B32B9/00 ,  B32B27/06 ,  B82Y30/00 ,  H01B1/04

    CPC分类号： B32B37/24 ,  B32B9/007 ,  B32B27/06 ,  B32B2037/243 ,  B32B2037/246 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2457/00 ,  B82Y30/00 ,  H01B1/04 ,  Y10T156/10 ,  Y10T428/24355 ,  Y10T428/24802 ,  Y10T428/31855

    摘要： A graphene-polymer layered composite and a method of manufacturing the same is provided. A graphene-polymer layered composite includes polymer layers surrounding a graphene sheet, and may include numerous polymer layers and graphene sheets in an alternating stacked configuration. The graphene-polymer layered composite has the characteristics of a polymer in that it provides flexibility, ease of manufacturing, low manufacturing costs, and low thermal conductivity. The graphene-polymer layered composite also has the characteristics of graphene in that it has a high electrical conductivity. Due to the low thermal conductivity and high electrical conductivity, the graphene-polymer layered composite may be useful for electrodes, electric devices, and thermoelectric materials.

    摘要翻译： 提供了石墨烯 - 聚合物层状复合材料及其制造方法。 石墨烯 - 聚合物层状复合物包括围绕石墨烯片的聚合物层，并且可以包括交替堆叠构型的许多聚合物层和石墨烯片。 石墨烯 - 聚合物层状复合材料具有聚合物的特征，因为它提供了灵活性，易于制造，低制造成本和低热导率。 石墨烯聚合物层状复合材料也具有石墨烯的特征，因为其具有高导电性。 由于导热性低，导电性高，石墨烯 - 聚合物层状复合材料可用于电极，电子器件和热电材料。

    Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit comprising the same
    6.
    发明授权
    Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit comprising the same 有权
    光接收装置及其制造方法以及包括该光接收装置的光电集成电路

    公开(公告)号：US07015560B2

    公开(公告)日：2006-03-21

    申请号：US10779741

    申请日：2004-02-18

    申请人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

    发明人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

    IPC分类号： H01L31/075

    CPC分类号： H01L27/1446

    摘要： A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow depth in the intrinsic region; and a second region formed to a deep depth in the intrinsic region and distanced from the first region, wherein the first and second regions are doped with different conductivity types. The light-receiving device can shorten the transit time of holes with slow mobility. Therefore, no response delay occurs, and thus, a high response speed can be accomplished.

    摘要翻译： 提供了一种光接收装置及其制造方法和包括该光接收装置的光电集成电路。 光接收装置包括：基板; 形成在所述基板上的本征区域; 在本征区域中形成为浅深度的第一区域; 以及第二区域，其形成为本征区域中的深度并与第一区域隔开，其中第一和第二区域掺杂有不同的导电类型。 光接收装置可以缩短移动性差的穿孔时间。 因此，没有响应延迟发生，因此可以实现高响应速度。

    Diffusion system
    7.
    发明申请
    Diffusion system 失效
    扩散系统

    公开(公告)号：US20050092244A1

    公开(公告)日：2005-05-05

    申请号：US10912059

    申请日：2004-08-06

    申请人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

    发明人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

    IPC分类号： H01L21/223 ,  C23C8/06 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/54 ,  C30B31/06 ,  C30B31/10 ,  C30B31/16 ,  C30B35/00 ,  H01L21/22 ,  C23C16/00

    CPC分类号： C30B31/10 ,  C23C8/06 ,  C30B31/06 ,  C30B31/165 ,  C30B35/00

    摘要： Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.

    摘要翻译： 提供了一种用于在晶片中形成掺杂层的扩散系统。 扩散系统包括用于产生掺杂气体的起泡器; 预混合器，其将掺杂气体与反应性气体预混合并预热气体混合物; 主室，其中气体混合物与晶片反应; 缓冲箱，其外部隔离排出口和用于将晶片装载和卸载的主体室; 以及在主室中反应完成后排出废气的废气排放系统。

    Light-emitting device and light-emitting apparatus using the same
    8.
    发明授权
    Light-emitting device and light-emitting apparatus using the same 有权
    发光装置及使用其的发光装置

    公开(公告)号：US06697403B2

    公开(公告)日：2004-02-24

    申请号：US10122416

    申请日：2002-04-16

    申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Jae-ho You

    发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Jae-ho You

    IPC分类号： H01S500

    CPC分类号： H01L33/24 ,  H01L33/105 ,  H01L33/34 ,  H01L33/42 ,  H01L33/465

    摘要： A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that of the substrate, to an ultra-shallow depth such that light is emitted from a p-n junction between the doped region and the substrate by a quantum confinement effect, a resonator which improves the selectivity of wavelength of the light emitted from the p-n junction, and first and second electrodes formed on the first surface and a second surface of the substrate, respectively, for injection of holes and electrons. The light-emitting device includes the ultra-shallow doped region so that it can emit light with a quantum confinement effect in the p-n junction. A resonator structure to resonate only a particular wavelength range of light is added to the light-emitting device so that the selectivity of light wavelength is markedly improved with excellent efficiency. The intensity of light emission is amplified by the resonator structure, and the directional property of the emitted light can be improved further than that of conventional light-emitting devices.

    摘要翻译： 发光装置和使用其的发光装置。 发光器件包括n型或p型衬底，在衬底的第一表面上形成具有与衬底相反的预定掺杂剂的掺杂区域到超浅深度，使得 光通过量子限制效应从掺杂区域和衬底之间的pn结发射，改善从pn结发射的光的波长的选择性的谐振器，以及形成在第一表面上的第一和第二电极 分别用于注入空穴和电子的衬底的表面。 发光器件包括超浅掺杂区域，使得其可以在p-n结中发射具有量子限制效应的光。 仅在特定的光波长范围内谐振的谐振器结构被添加到发光器件中，从而以优异的效率显着地提高了光波长的选择性。 通过谐振器结构放大发光强度，与现有的发光元件相比，能够进一步提高发光的取向性。

    Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device
    10.
    发明授权
    Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
    制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置

    公开(公告)号：US08354286B2

    公开(公告)日：2013-01-15

    申请号：US10758136

    申请日：2004-01-16

    申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

    发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

    IPC分类号： H01L21/00

    CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

    摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。