公开(公告)号：US09181091B2

公开(公告)日：2015-11-10

申请号：US12959501

申请日：2010-12-03

申请人： Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Sun-hwak Woo

发明人： Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Sun-hwak Woo

IPC分类号： H01L21/00 ,  B82Y40/00 ,  B82Y10/00 ,  H01L29/06 ,  H01L31/0352 ,  B82Y30/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L31/035209 ,  H01L31/035227

摘要： Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.

摘要翻译： 提供一种多孔纳米结构及其制造方法。 多孔纳米结构包括设置在纳米结构的外表面上的多个孔，其中多个孔的至少一部分在纳米结构内部延伸。

公开(公告)号：US08513101B2

公开(公告)日：2013-08-20

申请号：US12560768

申请日：2009-09-16

申请人： Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Byung-sung Kim

发明人： Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Byung-sung Kim

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/02532 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.

摘要翻译： 一种合成纳米线的方法。 该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线 ） 方法。

公开(公告)号：US08480931B2

公开(公告)日：2013-07-09

申请号：US12766258

申请日：2010-04-23

申请人： Byoung-lyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang ,  Byung-sung Kim

发明人： Byoung-lyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang ,  Byung-sung Kim

IPC分类号： H01B1/04

CPC分类号： H01L29/413 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02527 ,  H01L21/02554 ,  H01L21/02639 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/1606 ,  H01L51/0048

摘要： A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.

摘要翻译： 复合结构和复合结构的制造方法。 复合结构包括石墨烯片; 以及通过石墨烯片取向并具有基本上一维形状的纳米结构。

公开(公告)号：US09230801B2

公开(公告)日：2016-01-05

申请号：US13229183

申请日：2011-09-09

申请人： Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

发明人： Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

IPC分类号： B32B9/00 ,  H01L21/02 ,  C01B31/04

CPC分类号： H01L21/02381 ,  C01B32/182 ,  H01L21/02428 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02527 ,  H01L21/0259 ,  H01L21/02606 ,  H01L21/02664 ,  Y10T428/13 ,  Y10T428/24273 ,  Y10T428/24479 ,  Y10T428/30

摘要： A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.

摘要翻译： 石墨烯结构及其形成方法可以包括以三维（3D）形状形成的石墨烯，例如柱状，堆叠结构和三维连接的结构。 可以使用Ge形成石墨烯结构。

公开(公告)号：US08679976B2

公开(公告)日：2014-03-25

申请号：US12976874

申请日：2010-12-22

申请人： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Dong-mok Whang ,  Jae-hyun Lee

发明人： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Dong-mok Whang ,  Jae-hyun Lee

IPC分类号： H01L21/44

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/04 ,  C23C16/0272 ,  C23C16/26 ,  C30B25/02 ,  C30B29/08 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0262

摘要： A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.

摘要翻译： 制造石墨烯的方法包括在基板的表面上形成锗层，并且通过将含碳气体供给到其中设置基板的室中，直接在锗层上形成石墨烯。

公开(公告)号：US08927414B2

公开(公告)日：2015-01-06

申请号：US13470487

申请日：2012-05-14

申请人： Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

发明人： Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

IPC分类号： H01L21/4763 ,  H01L23/52

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02164 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0673 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

摘要： A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

公开(公告)号：US08330142B2

公开(公告)日：2012-12-11

申请号：US12708664

申请日：2010-02-19

申请人： Kyung-sang Cho ,  Byoung-lyong Choi ,  Eun-kyung Lee ,  Tae-ho Kim ,  Sang-jin Lee

发明人： Kyung-sang Cho ,  Byoung-lyong Choi ,  Eun-kyung Lee ,  Tae-ho Kim ,  Sang-jin Lee

IPC分类号： H01L21/02

CPC分类号： H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5096

摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

摘要翻译： 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带电平。

公开(公告)号：US20050074969A1

公开(公告)日：2005-04-07

申请号：US10915538

申请日：2004-08-11

申请人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

发明人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

IPC分类号： H01L29/41 ,  H01L21/20 ,  H01L21/265 ,  H01L21/28 ,  H01L21/283 ,  H01L21/285 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/82 ,  H01L21/8238 ,  H01L23/48 ,  H01L23/52 ,  H01L27/04 ,  H01L29/08 ,  H01L29/78

CPC分类号： H01L21/823814 ,  H01L21/26533 ,  H01L21/28506 ,  H01L21/823878 ,  H01L24/05 ,  H01L29/0847 ,  H01L29/78 ,  H01L2924/13091 ,  H01L2924/00

摘要： A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.

摘要翻译： 半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层 在衬底中的导电掺杂层下面。

公开(公告)号：US09144962B2

公开(公告)日：2015-09-29

申请号：US13094154

申请日：2011-04-26

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Choong-ho Yu

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Choong-ho Yu

IPC分类号： B32B3/00 ,  B32B37/02 ,  B32B37/24 ,  B32B9/00 ,  B32B27/06 ,  B82Y30/00 ,  H01B1/04

CPC分类号： B32B37/24 ,  B32B9/007 ,  B32B27/06 ,  B32B2037/243 ,  B32B2037/246 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2457/00 ,  B82Y30/00 ,  H01B1/04 ,  Y10T156/10 ,  Y10T428/24355 ,  Y10T428/24802 ,  Y10T428/31855

摘要： A graphene-polymer layered composite and a method of manufacturing the same is provided. A graphene-polymer layered composite includes polymer layers surrounding a graphene sheet, and may include numerous polymer layers and graphene sheets in an alternating stacked configuration. The graphene-polymer layered composite has the characteristics of a polymer in that it provides flexibility, ease of manufacturing, low manufacturing costs, and low thermal conductivity. The graphene-polymer layered composite also has the characteristics of graphene in that it has a high electrical conductivity. Due to the low thermal conductivity and high electrical conductivity, the graphene-polymer layered composite may be useful for electrodes, electric devices, and thermoelectric materials.

摘要翻译： 提供了石墨烯 - 聚合物层状复合材料及其制造方法。 石墨烯 - 聚合物层状复合物包括围绕石墨烯片的聚合物层，并且可以包括交替堆叠构型的许多聚合物层和石墨烯片。 石墨烯 - 聚合物层状复合材料具有聚合物的特征，因为它提供了灵活性，易于制造，低制造成本和低热导率。 石墨烯聚合物层状复合材料也具有石墨烯的特征，因为其具有高导电性。 由于导热性低，导电性高，石墨烯 - 聚合物层状复合材料可用于电极，电子器件和热电材料。

公开(公告)号：US20060252171A1

公开(公告)日：2006-11-09

申请号：US11350751

申请日：2006-02-10

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00 ,  A61B1/04 ,  H04N7/18

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.