公开(公告)号：US20100078062A1

公开(公告)日：2010-04-01

申请号：US12358228

申请日：2009-01-22

Applicant: Liang-De Wang ,  Yuan-Xiang Zou ,  Li-Chi Pan ,  Pin Chang

Inventor： Liang-De Wang ,  Yuan-Xiang Zou ,  Li-Chi Pan ,  Pin Chang

IPC: H01L31/052 ,  G02B5/08

CPC classification number: F24S23/00 ,  F24S23/30 ,  F24S23/31 ,  F24S23/79 ,  F24S2023/832 ,  H01L31/0543 ,  H01L31/0547 ,  Y02E10/44 ,  Y02E10/52

Abstract: A light collection system including a light concentrating device and a reflective curving-surface device is provided. The light concentrating device receives at least a portion of an incident light and forwardly emits the portion of the incident light after concentrating and passing it through a first focal region, so as to obtain a first-stage output light. The reflective curving-surface device has an entrance aperture for receiving the first-stage output light. The reflective curving-surface device includes a reflective inner curving surface, and at least a portion of the reflective inner curving surface has a second focal region. The first focal region and the second focal region are confocal or approximately confocal within a range. As a result, at least a portion of the first-stage output light is confocally converted into a forwardly emitted second-stage output light.

Abstract translation: 提供了一种包括聚光装置和反射弯曲表面装置的集光系统。 聚光装置接收入射光的至少一部分，并且在聚焦并使其通过第一焦点区域之后向前发射入射光的一部分，以获得第一级输出光。 反射弯曲表面装置具有用于接收第一级输出光的入口孔。 反射弯曲表面装置包括反射内弯曲表面，并且反射内弯曲表面的至少一部分具有第二焦点区域。 第一焦点区域和第二聚焦区域在一个范围内是共焦的或近似共焦的。 结果，第一级输出光的至少一部分被共焦地转换成向前发射的第二级输出光。

公开(公告)号：US20090283871A1

公开(公告)日：2009-11-19

申请号：US12178021

申请日：2008-07-23

Applicant: Hung-Pin Chang ,  Weng-Jin Wu ,  Wen-Chih Chiou ,  Chen-Hua Yu

Inventor： Hung-Pin Chang ,  Weng-Jin Wu ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC: H01L21/768 ,  H01L23/538

CPC classification number: H01L25/0657 ,  H01L21/768 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor substrate structure for use in a semiconductor substrate stack system is presented. The method includes a semiconductor substrate which includes a front-face, a backside, a bulk layer, an interconnect layer that includes a plurality of inter-metal dielectric layers sandwiched between conductive layers, a contact layer that is between the bulk layer and the interconnect layer, and a TSV structure commencing between the bulk layer and the contact layer and terminating at the backside of the substrate. The TSV structure is electrically coupled to the interconnect layer and the TSV structure is electrically coupled to a bonding pad on the backside.

Abstract translation: 本发明提供一种制造用于半导体衬底叠层系统的半导体衬底结构的方法。 该方法包括半导体衬底，其包括前表面，背面，体层，互连层，其包括夹在导电层之间的多个金属间介电层，位于体层和互连之间的接触层 层，以及从本体层和接触层之间开始并终止于衬底背面的TSV结构。 TSV结构电耦合到互连层，并且TSV结构电耦合到背面的接合焊盘。

公开(公告)号：US20090279343A1

公开(公告)日：2009-11-12

申请号：US12366949

申请日：2009-02-06

Applicant: Kuo-Pin Chang ,  Yi-Chou Chen ,  Wei-Chih Chien ,  Erh-Kun Lai

Inventor： Kuo-Pin Chang ,  Yi-Chou Chen ,  Wei-Chih Chien ,  Erh-Kun Lai

IPC: G11C16/02 ,  H01L21/28

CPC classification number: C07D417/04 ,  C07D413/04 ,  C07D413/14 ,  C07D417/14 ,  G11C7/20 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1641

Abstract: Metal-oxide based memory devices and methods for operating and manufacturing such devices are described herein. A method for manufacturing a memory device as described herein comprises forming a metal-oxide memory element, and applying an activating energy to the metal-oxide memory element. In embodiments the activating energy can be applied by applying electrical and/or thermal energy to the metal-oxide material.

Abstract translation: 本文描述了基于金属氧化物的存储器件以及用于操作和制造这种器件的方法。 如本文所述的用于制造存储器件的方法包括形成金属氧化物存储元件，并向金属氧化物存储元件施加激活能。 在实施方案中，可以通过向金属氧化物材料施加电和/或热能来施加活化能。

公开(公告)号：US20090169054A1

公开(公告)日：2009-07-02

申请号：US12344796

申请日：2008-12-29

Applicant: Yin-Pin CHANG ,  Tai-Chang YANG ,  Hong-Long CHOU

Inventor： Yin-Pin CHANG ,  Tai-Chang YANG ,  Hong-Long CHOU

IPC: G06K9/00

CPC classification number: G06K9/3233 ,  G06K9/00221

Abstract: A method of adjusting selected window size of an image object is applicable for tracking a target object in a video. The video includes a plurality of frames, and the target object has a display range changing with the playback of each frame. According to a variation trend of the display range of the target object, whether a variation times corresponding to the variation trend reaches a threshold value or not is recorded, and then the selected window size is reset, such that the target object is enclosed with a selected window having a size closer to the target object.

Abstract translation: 调整图像对象的选定窗口大小的方法适用于跟踪视频中的目标对象。 视频包括多个帧，并且目标对象具有随着每个帧的重放而改变的显示范围。 根据目标对象的显示范围的变化趋势，记录与变化趋势对应的变化时间是否达到阈值，然后重新设定所选择的窗口尺寸，使得目标对象被包围在 所选择的窗口具有更接近目标对象的尺寸。

公开(公告)号：US20090100244A1

公开(公告)日：2009-04-16

申请号：US12216181

申请日：2008-07-01

Applicant: Li-Pin Chang ,  Ming-Dar Chen

Inventor： Li-Pin Chang ,  Ming-Dar Chen

IPC: G06F12/00 ,  G06F3/00

CPC classification number: G06F12/0246 ,  G06F2212/7211 ,  G11C11/5621 ,  G11C2211/5641

Abstract: The present invention discloses a control method of an adaptive hybrid density memory storage device suitable for locating a data to the storage device. The storage device includes a high density memory unit and a low density memory unit. The method is characterized in that the property of the data is determined by its length, and the data is written to the high density memory unit or the low density memory unit according to the property of the data and the relative wearing rate and the amount of data processed by the storage device.

Abstract translation: 本发明公开了适用于将数据定位到存储装置的自适应混合密度存储装置的控制方法。 存储装置包括高密度存储单元和低密度存储单元。 该方法的特征在于数据的属性由其长度确定，并且数据根据数据的属性和相对的磨损率和数量被写入高密度存储单元或低密度存储单元 由存储设备处理的数据。

公开(公告)号：US20090060270A1

公开(公告)日：2009-03-05

申请号：US11871429

申请日：2007-10-12

Applicant: Pin-Chang Lee ,  Ruei-Chang Hsu

Inventor： Pin-Chang Lee ,  Ruei-Chang Hsu

IPC: G06K9/00

CPC classification number: G08B13/196 ,  G08B13/194

Abstract: An image detection method is performed by a computer to determine whether or not an image in a region shot by a camera changes. According to the method, consecutive images shot by the camera are captured, and at least one anchored frame for the consecutive images is set. Whether or not the images in the anchored frame should or should not change is determined, and a signal is transmitted to determine whether or not the detected region is normal or not. Then, a notification signal is transmitted automatically to remind supervisors to closely observe the detected region.

Abstract translation: 通过计算机执行图像检测方法，以确定相机拍摄的区域中的图像是否改变。 根据该方法，捕获由相机拍摄的连续图像，并且设置用于连续图像的至少一个锚定帧。 确定锚定帧中的图像是否应该改变，并且发送信号以确定检测到的区域是否正常。 然后，自动发送通知信号，提醒主管密切观察检测到的区域。

公开(公告)号：US20090008794A1

公开(公告)日：2009-01-08

申请号：US11773171

申请日：2007-07-03

Applicant: Weng-Jin Wu ,  Ku-Feng Yang ,  Hung-Pin Chang ,  Wen-Chih Chiou ,  Chen-Hua Yu

Inventor： Weng-Jin Wu ,  Ku-Feng Yang ,  Hung-Pin Chang ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC: H01L21/66 ,  B24B7/00 ,  H01L23/48 ,  H01L21/00

CPC classification number: B24B7/228 ,  B24B37/013 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wafer thinning system and method are disclosed that includes grinding away substrate material from a backside of a semiconductor device. A current change is detected in a grinding device responsive to exposure of a first set of device structures through the substrate material, where the grinding is stopped in response to the detected current change. Polishing repairs the surface and continues to remove an additional amount of the substrate material. Exposure of one or more additional sets of device structures through the substrate material is monitored to determine the additional amount of substrate material to remove, where the additional sets of device structures are located in the semiconductor device at a known depth different than the first set.

Abstract translation: 公开了一种包括从半导体器件的背面研磨衬底材料的晶片减薄系统和方法。 在研磨装置中检测到电流变化，响应于第一组器件结构暴露于基底材料，其中根据检测到的电流变化停止研磨。 抛光修复表面，并继续去除额外量的基材。 监测一个或多个另外的一组装置结构穿过基底材料的曝光，以确定要除去的基底材料的附加量，其中附加的器件结构组位于半导体器件中在与第一组不同的已知深度处。

公开(公告)号：US07447870B2

公开(公告)日：2008-11-04

申请号：US11452195

申请日：2006-06-14

Applicant: Jen-Wei Hsieh ,  Li-Pin Chang ,  Tei-Wei Kuo ,  Hsiang-Chi Hsieh

Inventor： Jen-Wei Hsieh ,  Li-Pin Chang ,  Tei-Wei Kuo ,  Hsiang-Chi Hsieh

IPC: G06F12/00

CPC classification number: G06F12/0246 ,  G06F2212/2022 ,  G06F2212/7207

Abstract: A highly efficient data characteristic identification device for flash memory is provided, including an instruction register, a plurality of auxiliary controllers, a data register, an address register, a microprocessor, a plurality of hash function units, a hash table unit, a comparator, a shifter, and an adder. By connecting the instruction register, data register and address register to a flash memory access control circuit and flash memory for storing the control instruction of the access control circuit and the data and physical and logical address of the flash memory, the control instruction is decoded and transmitted by the microprocessor and the auxiliary controllers to each circuit. A plurality of hash function units, a hash table unit, a comparator, a shifter, and an adder form an index computation circuit for flash memory LBA. By using the index and computation on the contents of the hash function units, the data characteristics of the LBA can be stored with less memory and higher efficiency. Therefore, the object of a highly efficient data access characteristic identification device for flash memory is provided.

Abstract translation: 提供了一种用于闪存的高效数据特征识别装置，包括指令寄存器，多个辅助控制器，数据寄存器，地址寄存器，微处理器，多个散列函数单元，散列表单元，比较器， 移位器和加法器。 通过将指令寄存器，数据寄存器和地址寄存器连接到闪存存取控制电路和闪存，用于存储访问控制电路的控制指令以及闪存的数据和物理和逻辑地址，对该控制指令进行解码， 由微处理器和辅助控制器传送到每个电路。 多个散列函数单元，散列表单元，比较器，移位器和加法器构成用于闪速存储器LBA的索引计算电路。 通过对散列函数单元的内容使用索引和计算，可以以较少的存储器和更高的效率存储LBA的数据特性。 因此，提供了一种用于闪速存储器的高效数据访问特性识别装置的目的。

公开(公告)号：US20080253344A1

公开(公告)日：2008-10-16

申请号：US12213216

申请日：2008-06-17

Applicant: Yen-Liang Lin ,  Hsung-Pin Chang ,  Ruei-Chuan Chang

Inventor： Yen-Liang Lin ,  Hsung-Pin Chang ,  Ruei-Chuan Chang

IPC: H04Q7/24

CPC classification number: H04W36/14 ,  H04W36/0011 ,  H04W88/06 ,  Y02D70/142

Abstract: A wireless LAN medium access controller supporting mode change and the mode change method thereof are proposed. A physical layer detects signal strength in the environment and writes a mode index value of the stronger signal into a register. When the written mode index value is different from a mode index value in the communication system, a medium access controller is informed to perform mode change. The physical layer then sends out an interrupt signal to a central processor and sends the mode index value to the central processor for comparison via a DMA module and a memory. An interface module is used to access the mode index value in the memory for providing an external interface for the medium access control layer. When the mode index value doesn't conform to the signal in the environment, a software layer in the medium access controller is used for mode change.

Abstract translation: 提出了一种支持模式变化的无线局域网媒体接入控制器及其模式变化方法。 物理层检测环境中的信号强度，并将较强信号的模式索引值写入寄存器。 当写入模式索引值与通信系统中的模式索引值不同时，通知媒体访问控制器执行模式改变。 物理层然后向中央处理器发出中断信号，并将模式索引值发送到中央处理器，以通过DMA模块和存储器进行比较。 接口模块用于访问存储器中的模式索引值，以为介质访问控制层提供外部接口。 当模式索引值不符合环境中的信号时，介质访问控制器中的软件层用于模式更改。

公开(公告)号：USD575689S1

公开(公告)日：2008-08-26

申请号：US29295135

申请日：2007-09-21

Applicant: Heng Pin Chang ,  Shin Miyata

Designer： Heng Pin Chang ,  Shin Miyata