公开(公告)号：US20220068640A1

公开(公告)日：2022-03-03

申请号：US17004262

申请日：2020-08-27

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L29/16

Abstract: Examples of the present technology include semiconductor processing methods to form diffusion barriers for germanium in a semiconductor structure. The methods may include forming a semiconductor layer stack from pairs of Si-and-SiGe layers. The Si-and-SiGe layer pairs may be formed by forming a silicon layer, and then forming the germanium barrier layer of the silicon layer. In some embodiments, the germanium-barrier layer may be less than or about 20 Å. A silicon-germanium layer may be formed on the germanium-barrier layer to complete the formation of the Si-and-SiGe layer pair. In some embodiments, the silicon layer may be an amorphous silicon layer, and the SiGe layer may be characterized by greater than or about 5 atom % germanium. Examples of the present technology also include semiconductor structures that include a silicon-germanium layer, a germanium-barrier layer, and a silicon layer.

公开(公告)号：US11244824B2

公开(公告)日：2022-02-08

申请号：US16754619

申请日：2018-10-09

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yihong Chen ,  Yong Wu ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.

公开(公告)号：US11177174B2

公开(公告)日：2021-11-16

申请号：US16690652

申请日：2019-11-21

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3105

Abstract: Methods of depositing a carbon film are discussed. Some embodiments selectively deposit a carbon film on a metal surface over a dielectric surface. Some embodiments form carbon pillars on metal surfaces selectively over dielectric surfaces. Some embodiments utilize carbon pillars in forming self-aligned vias.

公开(公告)号：US20210351035A1

公开(公告)日：2021-11-11

申请号：US17379508

申请日：2021-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  A61K9/00 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US20210327891A1

公开(公告)日：2021-10-21

申请号：US17223351

申请日：2021-04-06

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick ,  Huiyuan Wang ,  Susmit Singha Roy

IPC: H01L27/11556 ,  H01L21/8234 ,  H01L27/11582

Abstract: Memory devices and methods of manufacturing memory devices are provided. A plasma enhanced chemical vapor deposition (PECVD) method to form a memory cell film stack having more than 50 layers as an alternative for 3D-NAND cells is described. The memory stack comprises alternating layers of a first material layer and a second material layer.

公开(公告)号：US11131015B2

公开(公告)日：2021-09-28

申请号：US16225240

申请日：2018-12-19

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/768 ,  C23C8/10 ,  C23C16/06 ,  C23C8/16 ,  C23C8/12 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/762

Abstract: Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.

公开(公告)号：US20210202256A1

公开(公告)日：2021-07-01

申请号：US17197871

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/28 ,  C23C16/04 ,  C23C14/04

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

公开(公告)号：US11043379B2

公开(公告)日：2021-06-22

申请号：US16433101

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02

Abstract: Methods for depositing an amorphous carbon layer on a substrate are described. A substrate is exposed to a carbon precursor having a structure of Formula (I). Also described are methods of etching a substrate, including forming an amorphous carbon hard mask on a substrate by exposing the substrate to a carbon precursor having the structure of Formula (I).

公开(公告)号：US11043372B2

公开(公告)日：2021-06-22

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/683 ,  H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20 ,  H01L21/67 ,  C23C16/458 ,  C23C16/26 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/11556

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

公开(公告)号：US10954129B2

公开(公告)日：2021-03-23

申请号：US16002218

申请日：2018-06-07

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Chi Lu ,  Chi-I Lang ,  Nancy Fung ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C01B32/28 ,  H01L21/308 ,  C01B32/26 ,  H01L21/311 ,  C01B32/25 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505

Abstract: A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.