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    Match-rule based service message transfer method and system
    141.
    发明申请
    Match-rule based service message transfer method and system 有权

    公开(公告)号：US20130007824A1

    公开(公告)日：2013-01-03

    申请号：US13581628

    申请日：2011-06-24

    Applicant: Jianhua Kong ,  Bin Yang ,  Liming Zhou

    Inventor： Jianhua Kong ,  Bin Yang ,  Liming Zhou

    IPC: H04N21/20

    CPC classification number: H04N21/25891 ,  H04L65/4076 ,  H04N21/25

    Abstract: The disclosure provides a match-rule based service message transfer method and system in the IPTV, to address the problems in the IPTV message system of message storing and backlog, low push efficiency and poor usability. In the disclosure, match fields are arranged in a set-top box and a service message to be sent, the service message is sent by means of broadcast or multicast, the set-top box performs matching for the match fields based on the match rule, and filters the message. The disclosure avoids sending a service message by means of unicast, increases the push efficiency and can greatly reduce the storage load of offline messages in a message system. The formed message may be sent according to a single or combined policy which depends on a specific service attribute, thereby greatly facilitating the service operation.

    Methods of forming silicides of different thicknesses on different structures
    142.
    发明授权
    Methods of forming silicides of different thicknesses on different structures 有权
    在不同结构上形成不同厚度的硅化物的方法

    公开(公告)号：US08236693B2

    公开(公告)日：2012-08-07

    申请号：US11748743

    申请日：2007-05-15

    Applicant: Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

    Inventor： Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

    IPC: H01L21/44

    CPC classification number: H01L21/324 ,  H01L21/28052 ,  H01L29/66507 ,  H01L29/78

    Abstract: The gate and active regions of a device are formed and alternating steps of applying and removing nitride and oxide layers allows exposing silicon in different areas while keeping silicon or polysilicon in other area covered with nitride. Metal layers are deposited over the exposed silicon or polysilicon and annealing forms a silicide layer in the selected exposed areas. The oxide and/or nitride layers are removed from the covered areas and another metal layer is deposited. The anneal process is repeated with silicide of one thickness formed over the second exposed areas with additional thickness of silicide formed over the previous silicide thickness.

    Abstract translation: 形成器件的栅极和有源区，并且施加和去除氮化物和氧化物层的交替步骤允许在不同区域暴露硅，同时保持覆盖有氮化物的其它区域中的硅或多晶硅。 金属层沉积在暴露的硅或多晶硅上，退火在所选择的暴露区域中形成硅化物层。 氧化物层和/或氮化物层从被覆盖区域移除，另一个金属层被沉积​​。 在第二暴露区域上形成一层厚度的硅化物，并在先前的硅化物厚度上形成附加的硅化物厚度来重复退火工艺。

    Method for Forming an SOI Schottky Source/Drain Device to Control Encroachment and Delamination of Silicide
    143.
    发明申请
    Method for Forming an SOI Schottky Source/Drain Device to Control Encroachment and Delamination of Silicide 有权
    用于形成SOI肖特基源/排水装置以控制硅化物的侵蚀和分层的方法

    公开(公告)号：US20110230017A1

    公开(公告)日：2011-09-22

    申请号：US12726736

    申请日：2010-03-18

    Applicant: Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    Inventor： Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    IPC: H01L21/336

    CPC classification number: H01L29/7839 ,  H01L29/78654

    Abstract: A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

    Abstract translation: 提供一种制造肖特基场效应晶体管的方法，其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底，其中第一半导体层具有小于10.0nm的厚度。 栅极结构直接形成在第一半导体层上。 凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。 凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。 在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。

    ETSOI WITH REDUCED EXTENSION RESISTANCE
    144.
    发明申请
    ETSOI WITH REDUCED EXTENSION RESISTANCE 有权
    ETSOI具有降低的延伸电阻

    公开(公告)号：US20110227157A1

    公开(公告)日：2011-09-22

    申请号：US12726889

    申请日：2010-03-18

    Applicant: Bin Yang ,  Man Fai Ng

    Inventor： Bin Yang ,  Man Fai Ng

    IPC: H01L27/12 ,  H01L21/762 ,  H01L29/786

    CPC classification number: H01L29/78618 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78684 ,  H01L29/78696

    Abstract: A semiconductor is formed on an SOI substrate, such as an extremely thin SOI (ETSOI) substrate, with increased extension thickness. Embodiments include semiconductor devices having an epitaxially formed silicon-containing layer, such as embedded silicon germanium (eSiGe), on the SOI substrate. An embodiment includes forming an SOI substrate, epitaxially forming a silicon-containing layer on the SOI substrate, and forming a gate electrode on the epitaxially formed silicon-containing layer. After gate spacers and source/drain regions are formed, the gate electrode and underlying silicon-containing layer are removed and replaced with a high-k metal gate. The use of an epitaxially formed silicon-containing layer reduces SOI thickness loss due to fabrication process erosion, thereby increasing extension thickness and lowering extension resistance.

    Abstract translation: 在诸如极薄的SOI（ETSOI）衬底的SOI衬底上形成半导体，具有增加的延伸厚度。 实施例包括在SOI衬底上具有外延形成的含硅层（例如嵌入硅锗（eSiGe））的半导体器件。 实施例包括形成SOI衬底，在SOI衬底上外延形成含硅层，并在外延形成的含硅层上形成栅电极。 在形成栅极间隔物和源极/漏极区之后，去除栅电极和下面的含硅层，并用高k金属栅极代替。 使用外延形成的含硅层由于制造工艺侵蚀而减少SOI厚度损失，从而增加延伸厚度并降低延伸电阻。

    Method of fabricating a nitrogenated silicon oxide layer and MOS device having same
    146.
    发明授权
    Method of fabricating a nitrogenated silicon oxide layer and MOS device having same 有权
    制造氮化硅氧化物层的方法和具有其的MOS器件

    公开(公告)号：US07928020B2

    公开(公告)日：2011-04-19

    申请号：US11862865

    申请日：2007-09-27

    Applicant: Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. Alex See ,  Meisheng Zhou ,  Liang Choo Hsia

    Inventor： Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. Alex See ,  Meisheng Zhou ,  Liang Choo Hsia

    IPC: H01L21/00

    CPC classification number: H01L21/3143 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/31155 ,  H01L29/513 ,  H01L29/518

    Abstract: A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed.

    Abstract translation: 一种含氮介电层的制造方法和包括在基板上形成氧化硅层的电介质层的半导体器件，使得界面区域与基板相邻，表面区域与界面区域相对。 通过施加氮等离子体将氮引入到氧化硅层中。 在施加氮等离子体之后，将氧化硅层退火。 重复将氧气引入氧化硅层并退火氧化硅层的过程，以在氧化硅层中产生双峰氮浓度分布。 在氧化硅层中，峰值氮浓度远离界面区域，并且峰值氮浓度中的至少一个位于表面区域附近。 还公开了一种制造半导体器件的方法，其中还包括含氮氧化硅层。

    Lignin-blocking treatment of biomass and uses thereof
    149.
    发明授权
    Lignin-blocking treatment of biomass and uses thereof 有权
    生物质的木质素阻断处理及其用途

    公开(公告)号：US07604967B2

    公开(公告)日：2009-10-20

    申请号：US10391740

    申请日：2003-03-19

    Applicant: Bin Yang ,  Charles E. Wyman

    Inventor： Bin Yang ,  Charles E. Wyman

    IPC: C12P7/06

    CPC classification number: C12P7/10 ,  C12P7/08 ,  C12P19/02 ,  Y02E50/16 ,  Y02E50/17

    Abstract: Disclosed is a method for converting cellulose in a lignocellulosic biomass. The method provides for a lignin-blocking polypeptide and/or protein treatment of high lignin solids. The treatment enhances cellulase availability in cellulose conversion. Cellulase efficiencies are improved by the protein or polypeptide treatment. The treatment may be used in combination with steam explosion and acid prehydrolysis techniques. Hydrolysis yields from lignin containing biomass are enhanced 5-20%, and enzyme utilization is increased from 10% to 50%. Thus, a more efficient and economical method of processing lignin containing biomass materials utilizes a polypeptide/protein treatment step that effectively blocks lignin binding of cellulase.

    Abstract translation: 公开了一种在木质纤维素生物质中转化纤维素的方法。 该方法提供高木质素固体的木质素阻断多肽和/或蛋白质处理。 该处理增强了纤维素转化中的纤维素酶可用性。 通过蛋白质或多肽处理改善纤维素酶的效率。 该处理可以与蒸汽爆炸和酸预水解技术结合使用。 含木质素生物质的水解产量提高5-20％，酶利用率从10％提高到50％。 因此，处理含木质素的生物质材料的更有效和经济的方法利用有效阻断木质素结合纤维素酶的多肽/蛋白质处理步骤。

    METHOD FOR DISPLAYING A PACKET SWITCHED CONGESTION STATUS OF A WIRELESS COMMUNICATION NETWORK
    150.
    发明申请
    METHOD FOR DISPLAYING A PACKET SWITCHED CONGESTION STATUS OF A WIRELESS COMMUNICATION NETWORK 审中-公开
    用于显示无线通信网络的分组交换状态的方法

    公开(公告)号：US20090231997A1

    公开(公告)日：2009-09-17

    申请号：US12395783

    申请日：2009-03-02

    Applicant: Bin Yang ,  Hong-Bin Liang ,  Yong Liu

    Inventor： Bin Yang ,  Hong-Bin Liang ,  Yong Liu

    IPC: G08C15/00

    CPC classification number: H04M1/72522 ,  H04M1/2535 ,  H04W28/08 ,  H04W48/08 ,  H04W48/16

    Abstract: A method and mobile electronic device are provided that display, for a user, a packet switched congestion status of a wireless communication network that is useful for estimating a network quality of service. The method includes transmitting a packet switched congestion status inquiry message from the mobile electronic device to a first network element in the wireless communication network. A reply message received from the first network element in response to the packet switched congestion status inquiry message is then processed. The reply message includes transmission delay information obtained from a device transmission delay between the first network element and the mobile electronic device and a network transmission delay between the first network element and at least one packet switched support node. The packet switched congestion status is then determined based on the transmission delay information. Finally, the packet switched congestion status is displayed on the mobile electronic device.

    Abstract translation: 提供了一种方法和移动电子设备，其为用户显示可用于估计网络服务质量的无线通信网络的分组交换拥塞状态。 该方法包括将分组交换拥塞状态查询消息从移动电子设备发送到无线通信网络中的第一网元。 然后处理从第一网元接收到的响应于分组交换拥塞状态查询消息的应答消息。 回复消息包括从第一网络元件和移动电子设备之间的设备传输延迟获得的传输延迟信息和第一网络元件与至少一个分组交换支持节点之间的网络传输延迟。 然后基于传输延迟信息来确定分组交换拥塞状态。 最后，在移动电子设备上显示分组交换拥塞状态。

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