公开(公告)号：US20160203862A1

公开(公告)日：2016-07-14

申请号：US15074460

申请日：2016-03-18

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C13/00

CPC classification number: G11C13/003 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0002 ,  G11C13/0069 ,  G11C2213/74 ,  G11C2213/79

Abstract: A memory device includes a plurality of bit lines extending in a first direction, a plurality of word lines extending in a second direction crossing the first direction, and a plurality of memory cells. Each memory cell includes a memory element and two select transistors disposed along the first direction and the memory element being configured to store information based on changes in resistance. A first and a second column are formed by repeatedly arranging a first group and a second group of the memory cells, respectively, along the first direction, and the second column is disposed adjacent to the first column and the first group is displaced in the first direction such that, in the second direction, a first select transistor in respective memory cells in the first column is aligned with a second select transistor in respective memory cells in the second column.

Abstract translation: 存储器件包括沿第一方向延伸的多个位线，沿与第一方向交叉的第二方向延伸的多个字线以及多个存储单元。 每个存储单元包括存储元件和沿着第一方向设置的两个选择晶体管，并且存储元件被配置为基于电阻变化存储信息。 第一和第二列分别通过沿着第一方向重复布置第一组和第二组存储单元而形成，第二列与第一列相邻设置，第一组在第一组中移位 方向使得在第二方向上，第一列中的各个存储单元中的第一选择晶体管与第二列的各个存储单元中的第二选择晶体管对准。

公开(公告)号：US09337416B2

公开(公告)日：2016-05-10

申请号：US14730700

申请日：2015-06-04

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/00 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  G11C11/15

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

公开(公告)号：US09299916B2

公开(公告)日：2016-03-29

申请号：US14263657

申请日：2014-04-28

Applicant: Sony Corporation

Inventor： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/14 ,  H01L43/02 ,  B82Y25/00 ,  H01F10/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

Abstract: There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion occurring according to a current flowing in the lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer, the memory layer includes an alloy region containing at least one of Fe and Co, and a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than the saturated magnetization amount of the memory layer.

Abstract translation: 公开了一种存储元件，其包括通过磁性材料的磁化状态保持信息的存储层，作为存储在存储层中的信息的参考的磁化的磁化固定层，以及由 非磁性材料，并且设置在存储层和磁化固定层之间。 通过使用根据在具有存储层，中间层和磁化固定的层叠结构的层叠方向上流动的电流发生的自旋转矩磁化反转而使存储层的磁化反转来进行信息的存储 存储层包括含有Fe和Co中的至少一种的合金区域，并且存储层在其磁化反转期间接收的有效抗磁场的大小小于存储层的饱和磁化量。

公开(公告)号：US20160035971A1

公开(公告)日：2016-02-04

申请号：US14882637

申请日：2015-10-14

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC: H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01F41/325 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract translation: 存储元件包括存储层，固定磁化层，自旋势垒层和自旋吸收层。 存储层基于磁性材料的磁化状态存储信息。 通过隧道绝缘层为存储层提供固定磁化层。 自旋势垒层抑制自旋极化电子的扩散，并且设置在与固定磁化层相对的存储层侧。 自旋吸收层由引起自旋泵送的非磁性金属层形成，并且设置在与存储层相对的自旋阻挡层的一侧。 存储层中的磁化方向通过在分层方向上传递电流而改变以注入自旋极化电子，使得信息被记录在存储层中，并且自旋阻挡层至少包括选自氧化物，氮化物和氟化物的材料 。

公开(公告)号：US20150137288A1

公开(公告)日：2015-05-21

申请号：US14559167

申请日：2014-12-03

Applicant: Sony Corporation

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

Abstract: Spin transfer torque memory elements and memory devices are provided. In one embodiment, the spin transfer torque memory element includes a first portion including CoFeB, a second portion including CoFeB, an intermediate portion interposed between the first and second portions, a third portion adjoining the second portion opposite the intermediate portion, and a fourth portion adjoining the third portion opposite the second portion. The intermediate portion includes MgO. The third portion includes at least one of Ag, Au, Cr, Cu, Hf, Mo, Nb, Os, Re, Ru, Ta, W, and Zr. The fourth portion includes at least one alloy of Co, Fe, Pd, and Pt.

Abstract translation: 提供自旋转矩记忆元件和存储器件。 在一个实施例中，自旋转移转矩存储元件包括包括CoFeB的第一部分，包括CoFeB的第二部分，介于第一和第二部分之间的中间部分，邻接与中间部分相对的第二部分的第三部分，以及第四部分 邻接与第二部分相对的第三部分。 中间部分包括MgO。 第三部分包括Ag，Au，Cr，Cu，Hf，Mo，Nb，Os，Re，Ru，Ta，W和Zr中的至少一种。 第四部分包括至少一种Co，Fe，Pd和Pt的合金。

公开(公告)号：US20150019799A1

公开(公告)日：2015-01-15

申请号：US14377752

申请日：2013-02-13

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0661 ,  G06F3/0614 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2003/0695 ,  G06F2212/7208 ,  G11C7/1006 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2211/5647

Abstract: A memory comprising a memory array unit including a plurality of data units, and a controller. The controller is configured to receive data; convert the data into converted data using a conversion rule for converting a data piece into another data piece, wherein the conversion rule is selected based on the data received and independent of current data written in a data unit; and write the converted data and a conversion rule identifier corresponding to the conversion rule into the data unit.

Abstract translation: 一种存储器，包括包括多个数据单元的存储器阵列单元和控制器。 控制器配置为接收数据; 使用用于将数据片段转换为另一数据片段的转换规则将数据转换为转换数据，其中基于所接收的数据并且独立于写入数据单元中的当前数据来选择转换规则; 并将转换的数据和与转换规则相对应的转换规则标识写入数据单元。

公开(公告)号：US20140332916A1

公开(公告)日：2014-11-13

申请号：US14446685

申请日：2014-07-30

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC: H01L43/02 ,  H01L43/10

CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

Abstract translation: 公开了一种信息存储元件，包括：第一层，其包括具有垂直于膜面的磁化方向的铁磁层; 耦合到所述第一层的绝缘层; 以及耦合到与所述第一层相对的所述绝缘层的第二层，所述第二层包括固定磁化，以便能够用作所述第一层的参考。 第一层能够根据磁性材料的磁化状态存储信息，并且磁化状态被配置为通过自旋注入而改变。 第一层接收的有效抗磁场的大小小于第一层的饱和磁化量。

公开(公告)号：US20140319633A1

公开(公告)日：2014-10-30

申请号：US14330748

申请日：2014-07-14

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L43/10 ,  H01L27/22

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。

公开(公告)号：US20140169087A1

公开(公告)日：2014-06-19

申请号：US14184955

申请日：2014-02-20

Applicant: SONY CORPORATION

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

Abstract translation: 存储元件具有分层结构，包括具有垂直于磁化方向根据信息而变化的膜面的磁化的存储层，并且包括Co-Fe-B磁性层，通过施加磁化方向来改变磁化方向 分层结构的层叠方向上的电流以将信息记录在存储层中，具有垂直于成为存储在存储层中的信息的基底的膜面的磁化的磁化固定层和形成的中间层 并且设置在存储层和磁化固定层之间，第一氧化物层和第二氧化物层。

公开(公告)号：US08729649B2

公开(公告)日：2014-05-20

申请号：US13950370

申请日：2013-07-25

Applicant: Sony Corporation

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L29/82

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.

Abstract translation: 一种磁存储器件，包括在层表面上具有垂直磁化的存储层，其磁化方向根据信息而改变; 以及对存储层提供的参考层，并且是在层表面上具有垂直磁化的信息的基础，其中存储器件通过在电流流动时产生的自旋转矩反转存储层的磁化来存储信息 在由记忆层，非磁化层和参考层制成的层之间，存储层在记忆温度下的矫顽力为室温下的矫顽力的0.7倍以下，导热系数为 在层表面方向上形成在存储层的一侧的电极低于其周围的导热率。